TWI493020B - 銅／鉬膜或銅／鉬合金膜的蝕刻液組合物 - Google Patents

銅／鉬膜或銅／鉬合金膜的蝕刻液組合物 Download PDF

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Publication number
TWI493020B
TWI493020B TW103101207A TW103101207A TWI493020B TW I493020 B TWI493020 B TW I493020B TW 103101207 A TW103101207 A TW 103101207A TW 103101207 A TW103101207 A TW 103101207A TW I493020 B TWI493020 B TW I493020B
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TW
Taiwan
Prior art keywords
copper
etching
molybdenum
weight
molybdenum alloy
Prior art date
Application number
TW103101207A
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English (en)
Chinese (zh)
Other versions
TW201428091A (zh
Inventor
Sehoon Kim
Eunkyung Lee
Boyeon Lee
Hyoseop Shin
Original Assignee
Enf Technology Co Ltd
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Publication date
Application filed by Enf Technology Co Ltd filed Critical Enf Technology Co Ltd
Publication of TW201428091A publication Critical patent/TW201428091A/zh
Application granted granted Critical
Publication of TWI493020B publication Critical patent/TWI493020B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
TW103101207A 2013-01-14 2014-01-13 銅／鉬膜或銅／鉬合金膜的蝕刻液組合物 TWI493020B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20130003881 2013-01-14

Publications (2)

Publication Number Publication Date
TW201428091A TW201428091A (zh) 2014-07-16
TWI493020B true TWI493020B (zh) 2015-07-21

Family

ID=51142629

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103101207A TWI493020B (zh) 2013-01-14 2014-01-13 銅／鉬膜或銅／鉬合金膜的蝕刻液組合物

Country Status (3)

Country Link
KR (2) KR20140093620A (ko)
CN (2) CN107227463B (ko)
TW (1) TWI493020B (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI639730B (zh) * 2015-02-13 2018-11-01 關東鑫林科技股份有限公司 Etching liquid composition and etching method using the same
JP6337922B2 (ja) * 2015-08-03 2018-06-06 三菱瓦斯化学株式会社 銅層およびチタン層を含む多層薄膜をエッチングするためのエッチング液およびこれを用いたエッチング方法、並びに該エッチング方法を用いて得られた基板
KR101695571B1 (ko) * 2015-11-19 2017-01-12 오씨아이 주식회사 과산화수소계 금속 식각용 조성물
TWI618817B (zh) * 2015-12-29 2018-03-21 Daxin Materials Corporation 蝕刻液組成物及應用其之蝕刻方法
TWI640656B (zh) * 2016-03-24 2018-11-11 Daxin Materials Corporation 鹼性蝕刻液組成物及應用其之蝕刻方法
KR102096403B1 (ko) * 2017-09-18 2020-04-03 주식회사 이엔에프테크놀로지 식각액 조성물
CN109594079B (zh) * 2017-09-30 2021-02-12 深圳新宙邦科技股份有限公司 一种钼铝共用蚀刻液及蚀刻方法
CN108085683A (zh) * 2018-01-22 2018-05-29 深圳市华星光电技术有限公司 一种蚀刻液组合物
TWI646222B (zh) * 2018-04-25 2019-01-01 達興材料股份有限公司 用於蝕刻一含銅或銅合金層及含鉬或鉬合金層的多層薄膜之蝕刻液組成物及利用此蝕刻液組成物之蝕刻方法以及利用該蝕刻方法以製造顯示裝置或含igzo半導體的方法
CN109023372A (zh) * 2018-08-31 2018-12-18 深圳市华星光电技术有限公司 铜/钼膜层用蚀刻液组合物
CN109112545A (zh) * 2018-09-25 2019-01-01 惠州市宙邦化工有限公司 一种铜钼合金膜的化学蚀刻用组合物
CN111719157B (zh) * 2019-03-20 2024-06-07 易安爱富科技有限公司 蚀刻组合物及利用其的蚀刻方法
KR20210088290A (ko) * 2020-01-06 2021-07-14 주식회사 이엔에프테크놀로지 식각액 조성물
CN113106453A (zh) * 2020-02-26 2021-07-13 江苏艾森半导体材料股份有限公司 一种蚀刻液组合物及其应用
CN111519190B (zh) * 2020-05-27 2022-03-18 湖北兴福电子材料有限公司 一种铜制程面板中稳定蚀刻锥角的蚀刻液及稳定方法
CN112080747B (zh) * 2020-09-02 2021-10-08 Tcl华星光电技术有限公司 蚀刻钼/铜/钼或钼合金/铜/钼合金三层金属配线结构的蚀刻液组合物及其应用
CN114250469B (zh) * 2020-09-24 2023-04-18 深圳新宙邦科技股份有限公司 一种蚀刻液组合物及其制备方法
CN112301348A (zh) * 2020-10-16 2021-02-02 Tcl华星光电技术有限公司 金属线层的蚀刻液组合物及其应用
CN114164003A (zh) * 2021-12-06 2022-03-11 Tcl华星光电技术有限公司 用于显示面板的蚀刻剂组合物及显示面板的蚀刻方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201137176A (en) * 2010-02-15 2011-11-01 Mitsubishi Gas Chemical Co Etching liquid for multilayer thin films containing copper and molybdenum layers
TW201219601A (en) * 2010-11-12 2012-05-16 Oci Co Ltd Composition for etching metal layer

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JP2003307748A (ja) 2002-04-15 2003-10-31 Advanced Display Inc 液晶表示装置及びその製造方法
KR100505328B1 (ko) 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
KR100708970B1 (ko) 2004-12-09 2007-04-18 주식회사 엘지화학 구리 몰리브덴 배선용 식각 용액 조성물
KR101174767B1 (ko) 2005-03-10 2012-08-17 솔브레인 주식회사 금속배선 식각용액을 이용한 액정표시장치의 제조방법
KR101199533B1 (ko) * 2005-06-22 2012-11-09 삼성디스플레이 주식회사 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법
KR101495683B1 (ko) 2008-09-26 2015-02-26 솔브레인 주식회사 액정표시장치의 구리 및 구리/몰리브데늄 또는 구리/몰리브데늄합금 전극용 식각조성물

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201137176A (en) * 2010-02-15 2011-11-01 Mitsubishi Gas Chemical Co Etching liquid for multilayer thin films containing copper and molybdenum layers
TW201219601A (en) * 2010-11-12 2012-05-16 Oci Co Ltd Composition for etching metal layer

Also Published As

Publication number Publication date
TW201428091A (zh) 2014-07-16
CN103924244A (zh) 2014-07-16
CN107227463B (zh) 2020-05-19
KR20140093620A (ko) 2014-07-28
KR102058679B1 (ko) 2019-12-23
KR20160106544A (ko) 2016-09-12
CN107227463A (zh) 2017-10-03

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