TWI488545B - Plasma processing device and plasma processing method and memory medium - Google Patents
Plasma processing device and plasma processing method and memory medium Download PDFInfo
- Publication number
- TWI488545B TWI488545B TW097134558A TW97134558A TWI488545B TW I488545 B TWI488545 B TW I488545B TW 097134558 A TW097134558 A TW 097134558A TW 97134558 A TW97134558 A TW 97134558A TW I488545 B TWI488545 B TW I488545B
- Authority
- TW
- Taiwan
- Prior art keywords
- frequency power
- power source
- output
- oscillator
- plasma
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 72
- 238000003672 processing method Methods 0.000 title claims description 9
- 238000004891 communication Methods 0.000 claims description 64
- 230000005856 abnormality Effects 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 30
- 238000012544 monitoring process Methods 0.000 claims description 20
- 230000010355 oscillation Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000004590 computer program Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 15
- 230000002159 abnormal effect Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002490 cerebral effect Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007234365A JP4905304B2 (ja) | 2007-09-10 | 2007-09-10 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200932067A TW200932067A (en) | 2009-07-16 |
| TWI488545B true TWI488545B (zh) | 2015-06-11 |
Family
ID=40478273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097134558A TWI488545B (zh) | 2007-09-10 | 2008-09-09 | Plasma processing device and plasma processing method and memory medium |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4905304B2 (enExample) |
| KR (2) | KR101035248B1 (enExample) |
| CN (1) | CN101389179B (enExample) |
| TW (1) | TWI488545B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5141519B2 (ja) * | 2008-12-02 | 2013-02-13 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理装置の運転方法 |
| JP4891384B2 (ja) * | 2009-12-10 | 2012-03-07 | 株式会社新川 | プラズマ発生装置 |
| WO2011125733A1 (ja) * | 2010-04-02 | 2011-10-13 | 株式会社アルバック | 成膜装置 |
| JP6029302B2 (ja) * | 2012-03-29 | 2016-11-24 | 株式会社ダイヘン | マイクロ波電力供給装置 |
| KR20140066483A (ko) * | 2012-11-23 | 2014-06-02 | 엘아이지에이디피 주식회사 | 유도 결합 플라즈마 처리 장치 및 그 제어방법 |
| JP6144917B2 (ja) * | 2013-01-17 | 2017-06-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理装置の運転方法 |
| JP5704772B1 (ja) * | 2014-02-04 | 2015-04-22 | 株式会社京三製作所 | 高周波電源装置およびプラズマ着火方法 |
| JP2016225439A (ja) * | 2015-05-29 | 2016-12-28 | 東京エレクトロン株式会社 | プラズマ処理装置及び基板剥離検知方法 |
| US9947514B2 (en) * | 2015-09-01 | 2018-04-17 | Mks Instruments, Inc. | Plasma RF bias cancellation system |
| JP6667343B2 (ja) * | 2016-03-30 | 2020-03-18 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP7515423B2 (ja) * | 2021-01-22 | 2024-07-12 | 東京エレクトロン株式会社 | プラズマ処理装置の異常検知方法及びプラズマ処理装置 |
| JP7671680B2 (ja) * | 2021-10-29 | 2025-05-02 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| KR102450733B1 (ko) * | 2022-05-04 | 2022-10-06 | (주)알에프티에스아이 | 탄화 방지 시스템이 구비된 RF Generator |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW439087B (en) * | 1998-11-12 | 2001-06-07 | Lam Res Corp | Integrated power modules for plasma processing systems |
| JP2001274099A (ja) * | 2000-03-24 | 2001-10-05 | Mitsubishi Heavy Ind Ltd | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
| JP2003264180A (ja) * | 2002-03-12 | 2003-09-19 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理停止方法 |
| TW573392B (en) * | 2001-10-22 | 2004-01-21 | Shibaura Mechatronics Corp | Arc detecting method of glow discharge apparatus and high-frequency arc discharge suppressive apparatus |
| US20040058552A1 (en) * | 2002-09-20 | 2004-03-25 | Fujitsu Limited | Method for etching organic insulating film and method for fabricating semiconductor device |
| TW200507104A (en) * | 2003-08-01 | 2005-02-16 | Tokyo Electron Ltd | Plasma etching method and plasma treatment apparatus |
| US20050205208A1 (en) * | 2004-02-20 | 2005-09-22 | Tokyo Electron Limited | Plasma processing apparatus and control method thereof |
| CN1694229A (zh) * | 2004-04-30 | 2005-11-09 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理方法 |
| CN1992164A (zh) * | 2005-12-28 | 2007-07-04 | 东京毅力科创株式会社 | 等离子体蚀刻方法和计算机可读取的存储介质 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3829233B2 (ja) | 1999-05-24 | 2006-10-04 | 富士電機ホールディングス株式会社 | 高周波電源の制御方法 |
| JP2003064477A (ja) * | 2001-08-20 | 2003-03-05 | Sony Corp | 電源制御装置および電源制御方法 |
| JP2004220923A (ja) | 2003-01-15 | 2004-08-05 | Ulvac Japan Ltd | 異常放電検出装置と検出方法、及び該異常放電検出装置を備えたプラズマ処理装置 |
| US7292045B2 (en) * | 2004-09-04 | 2007-11-06 | Applied Materials, Inc. | Detection and suppression of electrical arcing |
| JP4597886B2 (ja) * | 2005-02-24 | 2010-12-15 | イーエヌ テクノロジー インコーポレイテッド | プラズマ電源装置用アークエネルギー制御回路 |
-
2007
- 2007-09-10 JP JP2007234365A patent/JP4905304B2/ja active Active
-
2008
- 2008-09-09 TW TW097134558A patent/TWI488545B/zh active
- 2008-09-09 KR KR1020080088672A patent/KR101035248B1/ko active Active
- 2008-09-10 CN CN2008101495379A patent/CN101389179B/zh active Active
-
2010
- 2010-10-20 KR KR1020100102484A patent/KR20100119851A/ko not_active Withdrawn
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW439087B (en) * | 1998-11-12 | 2001-06-07 | Lam Res Corp | Integrated power modules for plasma processing systems |
| JP2001274099A (ja) * | 2000-03-24 | 2001-10-05 | Mitsubishi Heavy Ind Ltd | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
| TW573392B (en) * | 2001-10-22 | 2004-01-21 | Shibaura Mechatronics Corp | Arc detecting method of glow discharge apparatus and high-frequency arc discharge suppressive apparatus |
| JP2003264180A (ja) * | 2002-03-12 | 2003-09-19 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理停止方法 |
| US20040058552A1 (en) * | 2002-09-20 | 2004-03-25 | Fujitsu Limited | Method for etching organic insulating film and method for fabricating semiconductor device |
| TW200507104A (en) * | 2003-08-01 | 2005-02-16 | Tokyo Electron Ltd | Plasma etching method and plasma treatment apparatus |
| US20050205208A1 (en) * | 2004-02-20 | 2005-09-22 | Tokyo Electron Limited | Plasma processing apparatus and control method thereof |
| CN1694229A (zh) * | 2004-04-30 | 2005-11-09 | 东京毅力科创株式会社 | 等离子体处理装置和等离子体处理方法 |
| CN1992164A (zh) * | 2005-12-28 | 2007-07-04 | 东京毅力科创株式会社 | 等离子体蚀刻方法和计算机可读取的存储介质 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200932067A (en) | 2009-07-16 |
| CN101389179B (zh) | 2011-11-30 |
| JP4905304B2 (ja) | 2012-03-28 |
| KR20090026735A (ko) | 2009-03-13 |
| JP2009070844A (ja) | 2009-04-02 |
| CN101389179A (zh) | 2009-03-18 |
| KR20100119851A (ko) | 2010-11-11 |
| KR101035248B1 (ko) | 2011-05-18 |
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