TWI488545B - Plasma processing device and plasma processing method and memory medium - Google Patents

Description

Plasma processing device, plasma processing method and memory medium

The present invention relates to a plasma processing apparatus, a plasma processing method, and a memory medium for plasma-treating a processing gas by high-frequency power, and performing etching or the like on the object to be processed by the plasma.

In a manufacturing process of a flat panel such as a semiconductor device or a liquid crystal display device, a plasma etching device or a plasma CVD film is formed by performing a process such as an etching process or a film formation process on a substrate to be processed such as a semiconductor wafer or a glass substrate. A plasma processing apparatus such as a device will be used.

The slurry processing apparatus uses, for example, a parallel plate type lightning-capacitance coupling plasma processing apparatus. Fig. 8 (a) is a schematic view showing the plasma processing apparatus in which an upper electrode 11 and a lower electrode 12 on which the substrate 10 to be processed is placed are provided. For example, in the device of the lower two-frequency type, the high-frequency lightning source 13 for generating a slurry (source) and the high-frequency power source 14 for biasing are connected to the lower electrode 12.

The high-frequency power source 14 for biasing has a task of preventing abnormal discharge in addition to ions introduced into the plasma to ensure the anisotropy of etching. That is, in the plasma processing of a large substrate, the high-frequency power source 13 for forming a separate plasma causes the state of the plasma P to be unstable depending on the processing conditions, and the in-plane uniformity of the ion sheath is deteriorated, and the arc is generated. (Abnormally thundering). Then, in the lower electrode 12, in addition to the high frequency for plasma formation, the high frequency of the high frequency power source 14 for biasing is superimposed, and the in-plane uniformity of the ion sheath layer on the substrate 10 to be processed is improved, and the abnormal discharge is avoided. happened. In the figure, h1 is a region in which the above-described ion sheath layer is formed.

However, for example, when the plasma processing apparatus 1 described above performs an etching treatment, a film having a property different from that before that may occur in the vicinity of the end point of the etching. Specifically, for example, when the etching of the upper film, that is, the film of the upper layer is progressed, and the metal film of the underlayer is exposed and etched, the composition of the plasma P changes, and the plasma impedance may largely change. Once the plasma impedance is greatly changed, the matching of the matching circuit will not be obtained, and an excessive reflected wave will be generated on the high-frequency power source 14 side.

Here, Patent Document 1 discloses a parallel plate type plasma processing apparatus which can stop plasma processing based on the reflected wave thus generated. Although not described in detail, it is conceivable that when an abnormality is detected by the monitoring means 20 in the plasma processing apparatus, the abnormality detection signal is transmitted to the controller, and then the stop signal is transmitted from the controller to each of the high frequencies. According to this command, each high-frequency power supply operates the internal stop unit to stop. On the other hand, in order to respond instantaneously, it is reviewed that each high-frequency power source has a detection function, and the oscillation operation of its own power source is stopped at the time of detection. In this case, if the oscillation operation of the power source is stopped, it is conceivable. An abnormality signal of one power source is transmitted to the device controller as in Patent Document 1, whereby the device controller transmits a signal to another high-frequency power source to stop the oscillation of the high-frequency power source, but such a configuration has the following problems. .

As described above, if an excessive reflected wave is generated on the side of the high-frequency power source 14 for bias application, the oscillation of the high-frequency power source 14 is stopped, and then an abnormal signal from the high-frequency power source 14 is transmitted to the device controller, and the slave controller When the signal is transmitted to the high-frequency power source 13 and the oscillation of the high-frequency power source 13 is stopped, it takes 100 milliseconds even if the signal is stopped from the oscillation of the high-frequency power source 14 until the oscillation of the high-frequency power source 13 is stopped. Further, as described above, the state of the plasma P is unstable, and as shown by h2 in Fig. 8(b), the region where the ion sheath layer is formed on the surface of the substrate 10 to be processed is narrowed, and abnormal discharge to the substrate 10 to be processed is generated. The current flows to the substrate 10 to be processed, and the substrate to be processed 10 is damaged.

Further, Patent Document 2 describes a circuit for stopping the oscillation of the high-frequency power source based on the power value of the reflected wave reflected to the high-frequency power source, but the problem of the present invention cannot be solved.

[Patent Document 1] JP-A-2003-264180: Request No. 6 and Paragraph 0026

[Patent Document 2] WO 2003-037047

The present invention has been made in view of the above circumstances, and an object thereof is to provide a method of performing a repulper treatment on a target object using a plurality of high-frequency power sources, and stopping the occurrence of an excessively large reflected wave on at least one of the high-frequency power sources. The output of the high-frequency power source and the output of the other high-frequency power source are instantaneously stopped, whereby the plasma processing apparatus, the plasma processing method, and the memory medium implementing the method can be suppressed from the abnormality of the plasma.

The plasma processing apparatus of the present invention is provided with a plurality of high-frequency power sources participating in the plasma, and the plasma processing apparatus for treating the object to be processed in the processing container by the plasma,

Its characteristics are:

Each of the plurality of high-frequency power sources includes an oscillator that oscillates a high frequency, a communication unit that communicates with the outside, and an output stop that stops the output of the oscillator when the stop signal is received by the communication unit.

The output stop portion of the high-frequency power source of at least one of the plurality of high-frequency power sources stops the output of the oscillator and outputs a stop signal when detecting a high-frequency abnormality output from the oscillator of the high-frequency power source. To the monitoring unit of the communication unit,

The communication unit of the high-frequency power source of the at least one and the communication unit of the other high-frequency lightning source directly transmits the stop signal from the monitoring unit to another high-frequency lightning source.

For example, the high frequency abnormality detected by the monitoring unit of the high frequency lightning source of at least one of the above is an abnormality of the reflected wave. Further, the communication unit of the at least one high-frequency lightning source and the communication unit of the other high-frequency lightning source are connected to each other by a communication path for directly transmitting the stop signal.

The lower electrode on which the substrate is placed in the processing container is disposed opposite to the upper electrode,

contain:

a high frequency power source for generating a slurry connected to one of the lower and upper electrodes; and

a high-frequency power source for bias application that is connected to the lower electrode and has a lower frequency than the high-frequency power source for plasma generation.

Further, the at least one high-frequency power source is the high-frequency power source for applying the bias voltage, and the other high-frequency power source includes the high-frequency power source for generating the plasma.

The communication unit that directly transmits the stop signal to the high-frequency power source for plasma generation can be directly transmitted from the communication unit of the high-frequency power source for bias voltage application.

In this case, for example, after the output stop unit stops the output of the oscillator of the high-frequency power source for bias application and the oscillator of the high-frequency power source for plasma generation, the high-frequency power source for applying the bias voltage is used. The sequence of the oscillator of the high-frequency lightning source for oscillator and plasma generation automatically restores its output.

The output stop portion of the high-frequency power source for generating the slurry may be configured by a monitoring unit that detects an output of the oscillator when a high-frequency abnormality output from the oscillator of the high-frequency lightning source is detected, and in this case, The high-frequency abnormality detected by the monitoring unit of the high-frequency power source for plasma generation is an abnormality of the reflected wave. Further, when the output of the oscillator of the high-frequency power source for plasma generation is stopped in response to the high-frequency abnormality, a device controller that transmits a stop signal to the communication unit of the high-frequency power source on the bias side is provided.

The output stop unit of the other high-frequency power source can be configured by a monitoring unit that stops the output of the oscillator when a high-frequency abnormality output from the oscillator of the high-frequency power source is detected. The high frequency abnormality detected by the monitoring unit of the other high frequency power source is an abnormality of the reflected wave. Also, for example, the output of the above oscillator is stopped to stop the oscillator.

The slurry processing method of the present invention is a plasma processing method for treating a processed object in a processing container by using a plurality of high-frequency power sources participating in the plasma, by using plasma.

Its characteristics are:

The monitoring unit of the high-frequency power source provided in at least one of the plurality of high-frequency power sources detects the high-frequency abnormality output from the oscillator of the high-frequency power source, and stops the oscillator by the monitoring unit. Outputting and outputting a stop signal for other high-frequency power sources to a communication unit included in the high-frequency power source;

Transferring the stop signal directly from the communication unit of the one high-frequency power source to the communication unit of the other high-frequency power source; and

When the communication unit of the other high-frequency power source receives the stop signal, the output of the high-frequency power source is stopped by the output stop unit of the high-frequency power source.

The memory medium of the present invention is used in a plasma processing apparatus for performing plasma processing on a substrate, and stores a memory medium of a cerebral blast program operating on a computer, which is characterized by:

The above computer program is programmed with a step group to enable the above-described plasma processing method.

When at least one high-frequency lightning source detects a high-frequency abnormality output from the oscillator of the high-frequency power source by using a plurality of high-frequency power sources participating in the plasma to perform plasma processing on the object to be processed, the oscillator is stopped. And output the abnormal signal (stop signal) directly from the high-frequency lightning source to the other high-frequency power source, and the output of the oscillator of the other high-frequency power source can be stopped, so that the abnormality of the high frequency can occur The high frequency output of other high frequency power supplies is stopped instantaneously. Therefore, it is possible to suppress the occurrence of abnormal discharge caused by the unstable state of the plasma, and thus it is possible to prevent or reduce damage of the object to be treated.

An embodiment of an apparatus for applying the plasma processing apparatus of the present invention to a glass substrate B for etching a liquid crystal display will be described with reference to FIG. This plasma etching apparatus 2 is a processing container 20 having a rectangular tube shape formed of, for example, anodized aluminum. A lower lightning electrode 41 is provided in a lower central portion of the processing container 20, and the lower electrode 41 serves as a mounting table on which the substrate B is placed. The substrate B is transported into the processing container 20 by a transport means (not shown). An insulator 42 is provided on the lower portion of the lower electrode 41, whereby the lower electrode 41 is formed in a state in which the processing container 20 is sufficiently electrically isolated from the insulator 42. 43 is a support portion of the lower electrode 41. Further, an opening 44 is provided in a lower portion of the processing container 20, and a matching box 45 of a ground frame is provided outside the opening 44.

The matching box 45 is provided with integrated circuits 46, 47 whose one end side is connected to the high frequency power source 6A for plasma formation (source) and the high frequency power source 6B for bias application, and the integrated circuits 46, 47 The other end side is connected to the lower electrode 41. 48A, 48B are coaxial cables. The integrating circuits 46, 47 adjust the impedance between the lower electrode 41 and the high-frequency power sources 6A, 6B in accordance with the impedance of the plasma.

Further, an exhaust passage 32 is connected to the side wall of the processing container 20, and the exhaust passage 32 is connected to a vacuum pump 33 serving as a vacuum exhausting means. Further, a gate valve 35 for opening and closing the transfer port 34 of the substrate B to be processed is provided on the side wall of the processing container 20.

An upper electrode 51 of a gas shower head serving as a gas supply unit is provided above the lower lightning electrode 41 so as to be opposed to the lower electrode 41. Further, the upper electrode 51 is connected to the top of the processing container 20 via an insulator 52 provided along the opening edge of the opening 36 provided on the upper side of the processing container 20, whereby the upper electrode 51 is sufficiently electrically formed by the insulator 52. The state of the processing container 20 is isolated.

The upper electrode 51 is connected to the processing gas supply unit 54 via the gas supply path 53 , and the processing gas supplied from the gas supply path 53 can be supplied to the processing space S by a plurality of gas holes 55 . In the figure, 57 is a conducting circuit.

The high-frequency power source 6A for the source is for supplying a high-frequency lightning force to the processing gas to plasma-activate (activate) the processing gas. As shown in FIG. 2, for example, the oscillator 61A for outputting a high-frequency oscillator of 13.56 MHz is provided. The arc detecting circuit unit 65A of the reflected wave monitoring unit and the communication board 62A. Further, the high-frequency power supply unit 6B for biasing is a device for biasing the substrate B, and includes, for example, an oscillator 61B that outputs a high frequency of 3.2 MHz, an arc detecting circuit unit 65B, and a communication board 62B. The first ports 63A and 63B of the communication boards 62A and 62B are respectively connected to the control board 71 by the cables 66A and 66B of the communication path for controller communication, and the control board 71 is connected to the device controller by the cable 73. 72. Further, the second port 64A of the high-frequency lightning source 6A is connected to the second port 64B of the communication board 62B of the high-frequency power source 6B by the cable 67 of the dedicated communication path.

Here, the communication functions between the respective units of the high-frequency power sources 6A and 6B and the high-frequency power sources 6A and 6B and the device controller 72 will be described in detail. The arc detecting circuit unit 65A of the high-frequency power source 6A has a power value (reflected power) value for detecting a high-frequency (traveling wave) power output from the oscillator 61A and a reflected wave reflected to the oscillator 61A, and is determined to be detected. Whether the reflected power value exceeds the predetermined allowable value. The output from the high frequency of the high-frequency lightning source 6A is, for example, 10 kW, and in this case, the allowable value of the reflected wave is, for example, 200 W. Then, when it is judged that the allowable value is exceeded, the arc detecting circuit portion 65A stops the output of the oscillator 61A.

Further, the arc detecting circuit unit 65B of the high-frequency power source 6B also detects the power value of the traveling wave output from the oscillator 61B and the reflected power value reflected to the oscillator 61B, and determines whether or not the detected reflected power value exceeds a predetermined value. The function of the allowable value. The output from the high frequency of the high-frequency power source 6B is, for example, 5 kW. In this case, the allowable value of the reflected wave is, for example, 200 W. Then, when it is judged that the allowable value is exceeded, the arc detecting circuit unit 65B stops the output of the oscillator 61B and outputs an abnormal signal to the second 埠 64B of the communication board 62B.

The communication board 62A of the high-frequency power source 6A has a signal for causing reflected power from the oscillator 61A, for example, a signal including a reflected lightning force value is transmitted from the first port 63A via the cable 66A, the control board 71, and the cable 73 to the device control. The device 72 outputs a stop command transmitted from the device controller 72 via the control board 71 to the task of the oscillator 61A.

On the other hand, the communication board 62B of the high-frequency power source 6B has a signal for causing the reflected lightning force from the oscillator 61B, for example, a signal including the reflected power value from the first 埠 63B via the lightning cable 66B, the control board 71, and the lightning cable. 73 is transmitted to the device controller 72, and the stop command transmitted from the device controller 72 via the control board 71 is output to the task of the oscillator 61B. Further, the communication board 62B has an abnormality signal that is outputted by the arc detecting circuit unit 65B and reflected by the oscillation of the oscillator 61B, and is transmitted directly from the second port 64B to the communication board 62A of the high-frequency power source 6A via the dedicated cable 67. The function of the 2nd 64A.

The device controller 72 collects data on the reflected power from each of the high-frequency power sources 6A and 6B. When one of the reflected power values exceeds the allowable value, a stop command is output to each of the high-frequency power sources 6A and 6B.

Further, the plasma etching apparatus 2 is provided with a control unit 20A composed of, for example, a computer. The control unit 20A is a data processing unit including a program, a memory, and a CPU. The program is programmed with a command, and the control unit 20A can transmit a control signal to each unit of the etching apparatus 2, and each of them will be described later. The substrate B is subjected to a plasma treatment under the step. Further, for example, the memory includes an area in which the value of the processing parameter such as the processing pressure, the processing time, the gas flow rate, and the electric power value is written, and when the CPU executes each command of the program, the processing parameters are read, corresponding to the A control signal of the parameter value is transmitted to each part of the plasma etching apparatus 2. The program (including a program for inputting or displaying a processing parameter) is stored in a memory unit 20B of a computer memory medium such as a floppy disk, a compact disc, an MO (optical disk), and the like, and is then mounted in the control unit 20A.

Next, the action of the plasma etching apparatus 2 will be described with reference to Figs. 4 and 5 . 3 and 4 show the flow of signals of the respective portions of the etching apparatus 2, and FIG. 5 shows the output waveform data of the high-frequency power sources 6A and 6B near the end point of the etching. In Fig. 5, the lock line indicates the output of the high-frequency power source 6B for bias application, and the solid line indicates the output of the high-frequency power source 6A for plasma formation.

First, the operator inputs the processing conditions of the gas type, the pressure in the processing container 20, and the electric power of the high-frequency power sources 6A and 6B from an input screen (not shown). Then, the gate valve 25 is opened, and an insulating film is formed on the surface, for example, and the substrate B on which the metal film is formed in the lower layer is carried into the processing container 20, and is placed on the lower electrode 41 by a cooperative action from an external transfer arm (not shown) and a lift pin. . Then, the gate valve is closed, and the processing gas is supplied from the gas supply unit serving as the upper electrode 51 to the processing container 20, and the inside of the processing container 20 is evacuated to form a set pressure.

Then, the device controller 72 transmits an input command to the first port 63A of the communication board 62A and the first port 63B of the communication board 62B via the control board 71. According to this input command, each of the oscillators 61A and 61B operates to output a high frequency.

The respective high frequencies output from the oscillators 61A and 61B are the paths of the coaxial cables 48A and 48B → the integrated circuits 46 and 47 → the lower electrode 41 → the upper electrode 51 → the conductive circuit 57 → the wall of the processing container 20 → the matching box 45. flow. Therefore, the processing gas is plasmatized by the high frequency from the oscillator 61A, the plasma P is formed in the processing space S, and the substrate B is biased by the high frequency of the oscillator 61B, in the plasma The ions are introduced into the substrate B side by the bias, and the insulating film on the surface of the substrate B is etched by an anisotropy (Fig. 3(a)). Further, as described in [Prior Art], the bias also has a function of uniformizing the sheath of the surface of the substrate B in the plane.

Then, the signals corresponding to the power values of the reflected waves reflected to the oscillators 61A and 61B and the high-frequency power values output from the oscillators 61A and 61B are transmitted from the oscillators 61A and 61B via the first plates of the communication boards 62A and 62B. The ports 63A, 63B and the control board 71 are transmitted to the device controller 72, which monitors the reflected power value and the high frequency power value. Further, the arc detecting circuit units 65A and 65B determine whether or not the reflected power exceeds an allowable value of, for example, 200 W.

When the insulating film of the substrate B is etched, the underlying metal film of the insulating film is exposed on the surface of the substrate B, and when the metal film starts to be etched, the impedance of the plasma P changes. When this change in impedance occurs, an instantaneous unconformed state is formed, and large reflected waves instantaneously occur in the oscillators 61A, 61B. Then, when the arc detecting circuit portion 65B of the high-frequency power source 6B on the bias side determines that the power value of the reflected wave reflected to the oscillator 61B exceeds 200 W, the lightning detecting circuit portion 65B stops the output of the oscillator 61B (FIG. 5). At the time t1), the abnormality signal is output to the second 埠 64B of the communication board 62B. This abnormal signal, that is, the stop signal for stopping the high-frequency power source 6A, is directly transmitted from the communication board 62B to the communication board 62A of the source high-frequency power source 6A, and is input to the lightning detection circuit unit 65A (Fig. 3(b) ). The arc detecting circuit unit 65A that receives this stop signal stops the output of the oscillator 61A (time t2 in Fig. 5). Between t1 and t2 is, for example, a few microseconds. When the oscillator 61B of the high-frequency power source 6B is stopped, as shown in FIG. 3(b), the formation region of the ion sheath layer is narrowed, but the generation of the plasma P is stopped immediately (it can be said that it is substantially simultaneous).

The oscillators 61A and 61B that have stopped output based on the stop signals from the respective arc detecting circuit units are automatically restored to the original output for a predetermined rise time after a predetermined rest period has elapsed. For the purpose of sufficiently suppressing the influence of the reflected wave, the high-frequency power source 6B for biasing is 300 ms to 500 ms between time t1 and t3, for example, 400 ms, and the high-frequency power source 6A for source is 400 ms between time t2 and t4. ~600ms, for example 500ms.

The oscillator 61B of the high-frequency power source 6B forms the same output as that before the time t1 that is turned off at time t5, and its output is maintained constant after time t5. Further, the oscillator 61A of the high-frequency power source 6A forms the same output as the time t2 that is turned off at time t6 after the time t5, and the plasma P is again formed (FIG. 4(c)), and plasma is performed on the substrate B. deal with. After time t6, the output of the high-frequency power source 61A is maintained constant. When the period in which the output of each of the high-frequency power sources 6A and 6B is restored is the restart period, the time t3 t5 of the restart period of the high-frequency power source 6B is 0.1 second to 2.0 seconds, for example, 0.7 second, and the high-frequency power source is used. The time t4 and t6 of the restarting period of 6A is 0.1 second to 2.0 seconds, for example, 0.7 second.

According to the plasma etching apparatus 2 described above, when the substrate B is subjected to plasma etching treatment using the high-frequency power source 6A for the source of the high-frequency power source participating in the plasma and the high-frequency power source 6B for biasing, When the reflected wave of the oscillator 61B reflected to the high-frequency power source 6B is abnormal, the built-in arc detecting circuit unit 65B stops the oscillator 61B of the high-frequency power source 6B, and directly transmits the stop signal from the high-frequency power source 6B. The high-frequency power source 6A for the source enables the arc detecting circuit unit 65A of the high-frequency power source 6A to stop the oscillator 61A. Therefore, after the oscillator 61B of the high-frequency power source 6B is stopped due to an abnormality of the reflected wave, for example, The μs unit is used to stop the high frequency output from the high frequency power source 6A. Therefore, it is possible to suppress the occurrence of abnormal discharge caused by the unstable state of the plasma, and the damage of the substrate B can be prevented or reduced. For example, as described above, when the film of the underlayer near the end of the film to be etched is exposed, the state of the plasma is changed, the matching cannot be obtained, and the substrate B is processed in a state where the high frequency for biasing is lost, so the method is extremely effective.

Actually, the plasma etching apparatus 2 described above is used to measure the time between the times t1 and t2 of FIG. 5 by about 1.7 μs (one hundredth of a second). As described in the [Prior Art], since the conventional device configuration is 100 ms or more, the effect of the present invention is remarkable. Further, in the high-frequency power source 6B for bias application, the time from when the reflected power of the allowable value or more is detected to when the oscillator 61B of the high-frequency lightning source 6B is turned off is 80 ns.

Further, when the lightning-arc detection circuit unit 65A on the source side detects a reflected wave exceeding the allowable value, the lightning-arc detection circuit unit 65A stops the output of the oscillator 61A, and corresponds to the occurrence of the over-permissible value at the oscillator 61A. The reflected wave and the signal of the case where the oscillator 61A is stopped by the lightning detection circuit unit 65A are transmitted to the device controller 72. The device controller 72 that has received this signal transmits a stop signal to the arc detecting circuit unit 65B via the communication board 62B, and the arc detecting circuit unit 65B stops the oscillator 61B on the bias side. The time required from the device controller 72 to the stop signal to reach the arc detecting circuit portion 65B after the output of the oscillator 61A is stopped is, for example, about 100 ms.

6 is an example of a waveform of an output when the high-frequency power source 6A is first raised to form a predetermined output at the start of etching and when the restart is started as described above, and an example of a waveform of a reflected wave generated at that time, the arc detecting circuit The allowable value of the portion 65A is set to 200W. When the output of the oscillator 61A of the high-frequency power source 6A is formed at a predetermined output at the start of etching (the period from S1 to S2 in the drawing), the time is faster than the restart period (the period between S4 and S5 in the drawing). The power rises to the desired value. In this way, the reflected wave is likely to occur in the restart period. Therefore, for example, in the period from S1 to S2, it is preferable to set the arc detecting circuit unit 65A not to stop the oscillator 61A even if the reflected power exceeds the allowable value. Output. The arc detecting circuit portion 63B of the high-frequency power source 61B is also the same, and when the high-frequency power source 61B is initially raised at the start of etching, it is preferable to set the output of the oscillator 61B to be stopped even if the reflected power exceeds the allowable value. .

Fig. 7 is a view showing a configuration of another slurry etching apparatus 9 which is provided with a high-frequency power source 6C which is configured in the same manner as the high-frequency lightning source 6A. The coaxial cable 48C of the high-frequency power source 6C is a coaxial cable 48A connected to the power source 6A via the combiner box 91, and the high-frequency power sources 6A and 6C are configured as a high-frequency power source for the source. When the arc detecting circuit unit 63B connected to the bias high-frequency power source 6B detects the reflected power exceeding the allowable value, the arc detecting circuit unit 63B stops the output of the oscillator 61B and passes through the high-frequency power source 6A, 6C. Each of the communication boards 62A and 62C transmits a signal to the arc detecting circuit units 65A and 65C, and the arc detecting circuit units 65A and 65C stop the outputs of the oscillators 61A and 61C. In this way, the arc detecting circuit unit that directly transmits a signal from the arc detecting circuit unit of one high-frequency power source to a plurality of other high-frequency power sources can be formed, and the configuration of the high-frequency power source connected to each arc detecting circuit unit can be stopped.

Each of the above-described embodiments is an example in which the communication board 62A for transmitting a signal from the communication board 62B of the bias high-frequency power source 6B to the source high-frequency power source 6A is shown. However, the present invention is not limited to the transmission of the stop signal from the source side to the bias. Press side. For example, when the arc detecting circuit 65A of the high-frequency power source 5A detects an excessive reflected wave in the oscillator 61A, the stop signal can be directly transmitted from the communication board 62A of the source high-frequency power source 6A to the high-frequency power source 6B for bias voltage. The communication board 62B enables the lightning arc detecting circuit unit 65B to stop the oscillator 61B. Further, the transmission of the stop signal is not limited to one direction, and the stop signal may be transmitted in both directions between the communication boards 62A and 62B.

Further, in the above-described embodiment, the arc detecting circuit of the high-frequency power source on the bias side outputs a stop signal based on the abnormality of the reflected wave. However, when the abnormality of the traveling wave is detected, the stop signal can be output in the same manner. Further, instead of using a dedicated cable 67, a stop signal can be transmitted wirelessly between the communication board 62B and the communication board 62A.

2. . . Plasma etching device

20. . . Processing container

41. . . Upper electrode

51. . . Lower electrode

6A. . . Source high frequency power supply

6B. . . Bias high frequency power supply

61A, 61B. . . Oscillator

62A, 62B. . . Communication board

65A, 65B. . . Arc detection circuit

72. . . Device controller

Fig. 1 is a longitudinal side view showing a plasma etching apparatus according to an embodiment of the present invention.

Fig. 2 is a view showing the configuration of a high-frequency power source of the plasma etching apparatus.

Fig. 3 is an explanatory view showing a signal flow direction of the plasma etching apparatus.

Fig. 4 is an explanatory view showing a signal flow direction of the plasma etching apparatus.

FIG. 5 is a waveform diagram showing outputs of respective high-frequency power sources when etching is stopped.

FIG. 6 is an explanatory view showing the output of the high-frequency power source and the waveform of the reflected wave at the time of starting and reopening of the etching.

Fig. 7 is a configuration diagram showing another configuration of a high-frequency power source of the plasma etching apparatus.

Fig. 8 is an explanatory diagram showing a state in which abnormal plasma is generated.

2. . . Plasma etching device

20. . . Processing container

45. . . Matching box

48A, 48B. . . Coaxial cable

6A. . . Source high frequency power supply

6B. . . Bias high frequency power supply

61A, 61B. . . Oscillator

62A, 62B. . . Communication board

64. . . The second 高频 of the high frequency power supply 6A

63A, 63B. . . 1st

64B. . . The second line of the communication board 62B

65A, 65B. . . Arc detection circuit

66A, 66B. . . cable

67, 73. . . cable

71. . . Control panel

72. . . Device controller

67, 73. . . cable

Claims (12)

A plasma processing apparatus is provided with a plurality of high-frequency power sources participating in plasma, and a plasma processing apparatus for processing a processed object in a processing container by plasma, wherein the plurality of high-frequency power sources are Each of the plurality of high-frequency power sources includes an oscillator that oscillates a high frequency, a communication unit that communicates with the outside, and an output stop that stops the output of the oscillator when the stop signal is received by the communication unit. The output stop portion of the at least one high-frequency power source is configured by stopping the output of the oscillator when detecting a high-frequency abnormality output from the oscillator of the high-frequency power source, and outputting a stop signal to the monitoring unit of the communication unit. The communication unit of the high-frequency power source of the at least one and the communication unit of the other high-frequency power source directly transmit the stop signal from the monitoring unit to another high-frequency power source, and the communication unit of the at least one high-frequency power source The communication units of the other high-frequency power sources are connected to each other by a communication path for directly transmitting the above-described stop signal. The plasma processing apparatus according to claim 1, wherein the high frequency abnormality detected by the monitoring unit of the at least one high frequency power source is an abnormality of the reflected wave. A plasma processing apparatus according to claim 1 or 2, wherein The lower electrode and the upper electrode in which the substrate is placed in the processing container are opposed to each other, and include: a high-frequency power source for generating plasma connected to one of the lower electrode and the upper electrode; and a lower electrode connected to the lower electrode a high-frequency power source for applying a bias voltage having a lower frequency than the high-frequency power source for generating plasma, and the at least one high-frequency power source is a high-frequency power source for applying the bias voltage, and the other high-frequency power source The high-frequency power source for generating the plasma is directly transmitted from the communication unit of the high-frequency power source for bias application to the communication unit of the high-frequency power source for plasma generation. The plasma processing apparatus according to the third aspect of the invention, wherein the output stop unit stops the output of the oscillator of the high-frequency power source for bias application and the oscillator of the high-frequency power source for plasma generation, The output is automatically restored in accordance with the sequence of the oscillator of the high-frequency power source for bias application and the oscillator of the high-frequency power source for plasma generation. The plasma processing apparatus according to claim 3, wherein the output stop portion of the high-frequency power source for generating the plasma stops when a high-frequency abnormality output from the oscillator of the high-frequency power source is detected. The monitoring unit of the output of the oscillator is configured. The plasma processing apparatus according to claim 5, wherein the high frequency abnormality detected by the monitoring unit of the high frequency power source for generating the plasma is an abnormality of the reflected wave. The plasma processing apparatus according to claim 5, wherein when the output of the oscillator of the high-frequency power source for plasma generation is stopped in accordance with the abnormality of the high frequency, the transmission stop signal is supplied to the high frequency on the bias side. Device controller of the communication unit of the power supply. The plasma processing apparatus according to claim 1 or 2, wherein the output stop portion of the other high-frequency power source stops the oscillation when a high-frequency abnormality output from the oscillator of the high-frequency power source is detected. The monitoring unit of the output of the device is configured. The plasma processing apparatus of claim 8, wherein the high frequency abnormality detected by the monitoring unit of the other high frequency power source is an abnormality of the reflected wave. A plasma processing apparatus according to claim 1 or 2, wherein the output of the oscillator is stopped to stop the oscillator. A plasma processing method is a plasma processing method for treating a processed object in a processing container by using a plurality of high-frequency power sources participating in the plasma, which is characterized in that: When the monitoring unit of the high-frequency power source of at least one of the high-frequency power sources detects the high-frequency abnormality output from the oscillator of the high-frequency power source, the monitoring unit stops the output of the oscillator and outputs another high-frequency power source. a stop signal to the communication unit included in the high-frequency power source; and a process of transmitting the stop signal directly from the communication unit of the one high-frequency power source to the communication unit of another high-frequency power source; When the communication unit of the other high-frequency power source receives the stop signal, the output of the high-frequency power source is stopped by the output stop unit of the high-frequency power source, and the communication unit of the at least one high-frequency power source is connected. The communication unit with the other high-frequency power sources is connected to each other by a communication path for directly transmitting the above-described stop signal. A memory medium for use in a plasma processing apparatus for plasma processing a substrate, storing a memory medium of a computer program operating on a computer, wherein the computer program is programmed with a step group, and is capable of being implemented as The plasma processing method described in claim 11 of the patent application.