JP2003309110A - Method and apparatus for plasma treatment - Google Patents
Method and apparatus for plasma treatmentInfo
- Publication number
- JP2003309110A JP2003309110A JP2002115138A JP2002115138A JP2003309110A JP 2003309110 A JP2003309110 A JP 2003309110A JP 2002115138 A JP2002115138 A JP 2002115138A JP 2002115138 A JP2002115138 A JP 2002115138A JP 2003309110 A JP2003309110 A JP 2003309110A
- Authority
- JP
- Japan
- Prior art keywords
- processing
- electrode
- plasma
- frequency power
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はプラズマ処理装置お
よびプラズマ処理方法にかかり，特にプラズマ処理装置
に備えられた電極の帯電および異常放電を防止すること
のできるプラズマ処理装置およびプラズマ処理方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus and a plasma processing method, and more particularly to a plasma processing apparatus and a plasma processing method capable of preventing charging and abnormal discharge of electrodes provided in the plasma processing apparatus.
【０００２】[0002]
【従来の技術】半導体製造工程，液晶表示装置の製造工
程などで行われるプラズマ処理においては，電極が備え
られた気密な処理容器内に処理ガスを導入し，電極に高
周波電力を印加して，処理ガスをプラズマ化し，被処理
体表面にエッチングや成膜等所定の処理を行っている。2. Description of the Related Art In plasma processing performed in semiconductor manufacturing processes, liquid crystal display manufacturing processes, etc., a processing gas is introduced into an airtight processing container provided with electrodes, and high frequency power is applied to the electrodes. The processing gas is turned into plasma, and a predetermined processing such as etching or film formation is performed on the surface of the processing target.
【０００３】図５は，従来のプラズマ処理装置の１例で
あるプラズマエッチング装置１０の概略断面図である。
図５に示すように，プラズマエッチング装置１０には，
例えば略円筒形の接地された気密な処理容器１２内に，
半導体ウエハＷを載置する，載置台を兼ねた下部電極１
４が，上下動可能に設けられている。FIG. 5 is a schematic sectional view of a plasma etching apparatus 10 which is an example of a conventional plasma processing apparatus.
As shown in FIG. 5, the plasma etching apparatus 10 includes
For example, in a substantially cylindrical grounded airtight processing container 12,
Lower electrode 1 that also serves as a mounting table on which the semiconductor wafer W is mounted
4 is provided so as to be movable up and down.
【０００４】下部電極１４に対向して上部電極１８が設
けられ，処理容器１２を介して接地されている。処理容
器１２上部には，ガス導入系（図示せず）に接続された
ガス導入口１６が設けられ，上部電極１８に設けられた
複数のガス吐出口１９より，処理ガスを処理容器１２内
に導入する。処理ガスには，例えばＣ４Ｆ８ガス，Ａｒ
ガスおよびＯ２ガスの混合ガス等が用いられる。処理容
器１２下部には，排気機構（図示せず）に接続された排
気管３０が設けられ，この排気管３０を介して真空引き
されることで，処理容器１２内は所定の真空度に保たれ
る。An upper electrode 18 is provided so as to face the lower electrode 14 and is grounded via the processing chamber 12. A gas introduction port 16 connected to a gas introduction system (not shown) is provided above the processing container 12, and the processing gas is introduced into the processing container 12 through a plurality of gas discharge ports 19 provided in the upper electrode 18. Introduce. The processing gas is, for example, C 4 F 8 gas or Ar.
A mixed gas of gas and O 2 gas or the like is used. An exhaust pipe 30 connected to an exhaust mechanism (not shown) is provided in the lower portion of the processing container 12, and the inside of the processing container 12 is maintained at a predetermined vacuum degree by vacuuming through the exhaust pipe 30. Be drunk
【０００５】下部電極１４内部には，外部から熱交換媒
体（冷媒）が熱交換媒体導入排出管６６を介して循環
し，下部電極１４を介して半導体ウエハＷを所定温度に
維持することが可能なように構成されている。また下部
電極１４の温度は，温度センサ（図示せず），温度制御
機構（図示せず）によって自動的に制御される構成とな
っている。Inside the lower electrode 14, a heat exchange medium (refrigerant) circulates from the outside through a heat exchange medium introducing / exhausting pipe 66, and the semiconductor wafer W can be maintained at a predetermined temperature through the lower electrode 14. It is configured like this. The temperature of the lower electrode 14 is automatically controlled by a temperature sensor (not shown) and a temperature control mechanism (not shown).
【０００６】さらに，下部電極１４内部には，半導体ウ
エハＷの裏面の微小空間２４に伝熱媒体，例えばＨｅガ
スなどを供給するためのガス通路２２が形成されてお
り，このＨｅガスを介して半導体ウエハＷが所定の温度
に維持される。Further, inside the lower electrode 14, there is formed a gas passage 22 for supplying a heat transfer medium such as He gas to a minute space 24 on the back surface of the semiconductor wafer W, and through this He gas. The semiconductor wafer W is maintained at a predetermined temperature.
【０００７】下部電極１４には，整合器３４を介して高
周波電源３６から，１３．５６ＭＨｚの高周波電力を供
給する。また，下部電極１４は，抵抗３２を介して接地
されており，プラズマ処理や，熱交換媒体の循環により
生ずる下部電極１４の帯電を防止するように構成されて
いる。High frequency power of 13.56 MHz is supplied to the lower electrode 14 from a high frequency power supply 36 via a matching unit 34. Further, the lower electrode 14 is grounded via the resistor 32, and is configured to prevent the lower electrode 14 from being charged due to plasma processing or circulation of the heat exchange medium.
【０００８】処理容器１２内に導入された処理ガスは，
高周波電源３６により与えられる電力によってプラズマ
状態となり，電極間の下部電極１４近傍に発生する自己
バイアス電圧により加速されたイオン及びラジカルのエ
ネルギーにより，被処理体にエッチング処理が施され
る。このとき，下部電極１４上の周縁部には，シリコン
等からなるフォーカスリング２０が形成され，半導体ウ
エハＷのプラズマ処理の均一性を向上させるように構成
されている。The processing gas introduced into the processing container 12 is
A plasma state is generated by the power supplied from the high frequency power source 36, and the energy of ions and radicals accelerated by the self-bias voltage generated in the vicinity of the lower electrode 14 between the electrodes etches the object to be processed. At this time, a focus ring 20 made of silicon or the like is formed on the peripheral portion on the lower electrode 14 so as to improve the uniformity of plasma processing of the semiconductor wafer W.
【０００９】[0009]
【発明が解決しようとする課題】ところで，上記のよう
なプラズマ処理装置１０においては，下部電極１４内部
を流れる熱交換媒体によって蓄積される静電気や，プラ
ズマ処理時に印加される高周波電力によって生ずる自己
バイアス電圧などにより，下部電極１４は帯電しやすい
状態になっている。下部電極１４が帯電していると，メ
インテナンス時に触れた場合，電荷を感じることがあ
る。In the plasma processing apparatus 10 as described above, self-bias generated by static electricity accumulated by the heat exchange medium flowing inside the lower electrode 14 or high frequency power applied during plasma processing. The lower electrode 14 is easily charged due to voltage or the like. If the lower electrode 14 is charged, it may feel a charge when touched during maintenance.
【００１０】また，プラズマ処理条件によって，例えば
半導体ウエハＷ近傍に生ずる自己バイアス電圧が高い場
合等には，ガス通路２２の穴などを介して半導体ウエハ
Ｗと下部電極１４間でＤＣ放電が発生し，半導体ウエハ
Ｗにダメージを与えたり，異常放電の原因となったりす
るという問題があった。Further, depending on the plasma processing conditions, for example, when the self-bias voltage generated near the semiconductor wafer W is high, DC discharge is generated between the semiconductor wafer W and the lower electrode 14 through the hole of the gas passage 22 or the like. However, there is a problem that the semiconductor wafer W is damaged or causes abnormal discharge.
【００１１】本発明は，従来のプラズマ処理装置および
プラズマ処理方法が有する上記問題点に鑑みてなされた
ものであり，本発明の目的は，電極の帯電および異常放
電を防止することの可能な，新規かつ改良されたプラズ
マ処理装置およびプラズマ処理方法を提供することであ
る。The present invention has been made in view of the above problems of the conventional plasma processing apparatus and plasma processing method. An object of the present invention is to prevent charging and abnormal discharge of electrodes. It is to provide a new and improved plasma processing apparatus and plasma processing method.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するた
め，本発明によれば，処理容器内に処理ガスを導入する
とともに処理容器内にある被処理体を設置する電極に高
周波電力を印加して前記処理ガスのプラズマを形成し，
被処理体の処理面に対して所定のプラズマ処理を施すプ
ラズマ処理装置であって，高周波電力が印加される電極
は，抵抗及び，前記抵抗に直列に接続された回路開閉手
段を介して接地されているプラズマ処理装置およびプラ
ズマ処理方法が提供される。電極内部には，被処理体と
電極間に伝熱ガスを供給する伝熱ガス経路，あるいは媒
体循環路を設けるようにしてもよい。抵抗の抵抗値は，
１キロオーム以上１００メガオーム以下とすることがで
きる。In order to solve the above-mentioned problems, according to the present invention, a processing gas is introduced into a processing container, and high-frequency power is applied to an electrode for installing an object to be processed in the processing container. To form a plasma of the processing gas,
A plasma processing apparatus for performing a predetermined plasma processing on a processing surface of an object to be processed, wherein an electrode to which high-frequency power is applied is grounded via a resistor and a circuit opening / closing means connected in series to the resistor. A plasma processing apparatus and a plasma processing method are provided. A heat transfer gas path for supplying heat transfer gas between the object to be processed and the electrode or a medium circulation path may be provided inside the electrode. The resistance value of the resistor is
It can be 1 kilohm or more and 100 megohm or less.
【００１３】かかる構成および方法によれば，プラズマ
処理中は電極を直流（ＤＣ）的にフローティング状態に
して，被処理体と電極との間の放電が持続的に生じない
ようにすることができ，処理を行わないときには，電極
を接地させることで，帯電を防止できる。According to the above structure and method, the electrode can be brought into a floating state in a direct current (DC) state during the plasma processing so that the discharge between the object to be processed and the electrode is not continuously generated. , When the processing is not performed, the electrode can be grounded to prevent the charging.
【００１４】また，高周波電力が印加される電極と，被
処理体の周囲に設けられる非絶縁性部材とが，第１の抵
抗体を介して接続されているプラズマ処理装置およびプ
ラズマ処理方法でもよい。電極は，第１の抵抗体より大
きな抵抗値を有する第２の抵抗体を介して接地されるよ
うにしてもよい。そのとき，第１の抵抗体の抵抗値は，
１オーム以上５００キロオーム以下であることが好まし
い。Further, the plasma processing apparatus and the plasma processing method in which the electrode to which the high frequency power is applied and the non-insulating member provided around the object to be processed are connected via the first resistor may be used. . The electrode may be grounded via a second resistor having a resistance value higher than that of the first resistor. At that time, the resistance value of the first resistor is
It is preferably 1 ohm or more and 500 kilo ohms or less.
【００１５】かかる構成および方法によれば，被処理体
と電極とをＤＣ的に略同電位とすることができるので，
プラズマ処理中の電極と被処理体間のＤＣ放電や，プラ
ズマの異常放電を防止して，被処理体に安定して適切な
プラズマ処理を行うことができる。According to this structure and method, the object to be processed and the electrode can be made to have substantially the same DC potential.
DC discharge between the electrode and the object to be processed during plasma processing and abnormal discharge of plasma can be prevented, and stable and appropriate plasma processing can be performed on the object to be processed.
【００１６】また，処理容器内に処理ガスを導入すると
ともに処理容器内にある被処理体を設置する電極に高周
波電力を印加して処理ガスのプラズマを形成し，被処理
体の処理面に対して所定のプラズマ処理を施すプラズマ
処理装置であって，プラズマ処理装置のメインテナンス
用に設けられた扉の開閉と連動した，高周波電力が印加
される電極に接続された接地回路の開閉手段を有するよ
うに構成されたプラズマ処理装置及びそのプラズマ処理
方法，また，電極が抵抗及び抵抗に直列に接続された回
路開閉手段により接地されており，電極を抵抗を介して
接地している回路開閉手段を開放する工程と，電極に高
周波電力を印加する工程と，電極への高周波電力印加を
停止する工程と，高周波電力印加の停止後，回路開閉手
段を接続し，電極を抵抗を介して接地する工程とを有す
るプラズマ処理方法が提供される。Further, the processing gas is introduced into the processing container, and high-frequency power is applied to the electrode for installing the object to be processed in the processing container to form plasma of the processing gas, and the plasma is generated on the surface of the object to be processed. A plasma processing apparatus for performing a predetermined plasma processing by using a ground circuit opening / closing means connected to an electrode to which high-frequency power is applied, interlocking with opening / closing of a door provided for maintenance of the plasma processing apparatus. And a plasma processing method therefor, and an electrode is grounded by a resistance and a circuit opening / closing means connected in series to the resistance, and the circuit opening / closing means grounding the electrode via the resistance is opened. The step of applying high frequency power to the electrodes, the step of stopping the high frequency power application to the electrodes, and the step of connecting the circuit opening / closing means after stopping the high frequency power application. Plasma processing method and a step of grounding through the resistor is provided.
【００１７】かかる構成によれば，メインテナンス時に
は常に電極が接地され，帯電を防止できるので，作業者
が電極に触れた場合に，電荷を感じることはない。ま
た，電極は最低限，手で触れるときのみ接地されればよ
いが，扉の開閉と連動して電極を接地させるようにする
ことで，電極を接地させるための開閉制御手段を独立し
て設ける必要がなく，コストダウンの効果がある。According to this structure, the electrode is always grounded during maintenance, and charging can be prevented. Therefore, when the worker touches the electrode, no electric charge is felt. In addition, the electrode may be grounded only when it is touched by a minimum, but the electrode is grounded in conjunction with the opening and closing of the door, so that the opening / closing control means for grounding the electrode is independently provided. It is not necessary and has the effect of cost reduction.
【００１８】[0018]
【発明の実施の形態】以下に添付図面を参照しながら，
本発明にかかるプラズマ処理装置およびプラズマ処理方
法の好適な実施の形態について詳細に説明する。なお，
本明細書及び図面において，実質的に同一の機能構成を
有する構成要素については，同一の符号を付することに
より重複説明を省略する。BEST MODE FOR CARRYING OUT THE INVENTION Referring to the accompanying drawings,
A preferred embodiment of a plasma processing apparatus and a plasma processing method according to the present invention will be described in detail. In addition,
In the present specification and the drawings, components having substantially the same functional configuration are designated by the same reference numerals, and duplicate description will be omitted.
【００１９】（第１の実施の形態）図１は，本実施の形
態にかかるプラズマエッチング装置１００の構成を示す
概略断面図である。なお，図１において図５と同一部分
は同一符号を付して，その詳細説明を省略する。下部電
極１０４は，回路１３０を介して接地されている。回路
１３０は，直列に接続された抵抗１３２およびリレー１
３４を有している。抵抗１３２の抵抗値は例えば１キロ
オーム以上１００メガオーム以下である。(First Embodiment) FIG. 1 is a schematic sectional view showing the structure of a plasma etching apparatus 100 according to the present embodiment. In FIG. 1, the same parts as those in FIG. 5 are designated by the same reference numerals, and detailed description thereof will be omitted. The lower electrode 104 is grounded via the circuit 130. The circuit 130 includes a resistor 132 and a relay 1 connected in series.
It has 34. The resistance value of the resistor 132 is, for example, 1 kilohm or more and 100 megohm or less.
【００２０】図２は，高周波電源１１４およびリレー１
３４のオンオフ状態を示す図である。図２に示すよう
に，時刻ｔ１で高周波電源１１４がオンされると，リレ
ー１３４はオフされる。これにより，プラズマ処理中，
下部電極１０４はフローティング状態となるので，ガス
通路２２の穴を介して半導体ウエハＷと下部電極１０４
との間のＤＣ放電が継続的に生じたり，プラズマが異常
放電を起こしたりすることが防止でき，半導体ウエハＷ
にダメージを与えることなく適切なプラズマ処理を行う
ことが可能となる。FIG. 2 shows a high frequency power source 114 and a relay 1.
It is a figure which shows the ON / OFF state of 34. As shown in FIG. 2, when the high frequency power supply 114 is turned on at time t1, the relay 134 is turned off. As a result, during plasma processing,
Since the lower electrode 104 is in a floating state, the semiconductor wafer W and the lower electrode 104 pass through the holes of the gas passage 22.
It is possible to prevent continuous DC discharge between the semiconductor wafer W and the semiconductor wafer W, and to prevent abnormal discharge of plasma.
It is possible to perform an appropriate plasma treatment without damaging the.
【００２１】また，時刻ｔ２で高周波電源１１４がオフ
されると，リレー１３４はオンされ，下部電極１０４
は，抵抗１３２を介して接地される。これにより，処理
を行っていないときには常に下部電極１０４は接地され
ることになるので，下部電極１００４内を流れる熱交換
媒体などによる帯電を防止することができ，メインテナ
ンス時に作業者が電荷を感ずることはない。When the high frequency power source 114 is turned off at time t2, the relay 134 is turned on and the lower electrode 104 is turned on.
Is grounded through the resistor 132. As a result, since the lower electrode 104 is always grounded when no processing is performed, it is possible to prevent charging due to the heat exchange medium flowing in the lower electrode 1004, and the operator feels the charge during maintenance. There is no.
【００２２】（第２の実施の形態）図３は，第２の実施
の形態にかかる下部電極１０４周辺の部分概略断面図で
ある。図３に示すように，第２の実施の形態にかかる下
部電極１０４には，その上面周縁部に，プラズマを半導
体ウエハＷ上部に効率よく発生させるのを補助する，例
えば導電性のシリコンよりなるフォーカスリング１２０
が設けられている。下部電極１０４とフォーカスリング
１２０とは，抵抗体１４８を介して電気的に接続されて
いる。(Second Embodiment) FIG. 3 is a partial schematic cross-sectional view around the lower electrode 104 according to the second embodiment. As shown in FIG. 3, the lower electrode 104 according to the second embodiment is made of, for example, conductive silicon at the peripheral portion of the upper surface of the lower electrode 104 to assist in efficiently generating plasma above the semiconductor wafer W. Focus ring 120
Is provided. The lower electrode 104 and the focus ring 120 are electrically connected via the resistor 148.
【００２３】また，下部電極１０４は，整合器３４を介
して，高周波電源１１４と接続されているとともに，回
路１４０を介して接地されている。回路１４０は，抵抗
１４２，１４４が直列に接続されており，両者の接続部
の電位を，モニタ１４６で測定できるように構成されて
いる。抵抗１４２，１４４の抵抗値をそれぞれＲ２，Ｒ
３とすると，モニタ１４６で電位Ｖ１を測定すること
で，下部電極１０４の電位Ｖ２は，Ｖ２＝（（Ｒ２＋Ｒ
３）／Ｒ３）×Ｖ１で求められる。The lower electrode 104 is connected to the high frequency power source 114 via the matching unit 34 and is also grounded via the circuit 140. The circuit 140 is configured such that the resistors 142 and 144 are connected in series, and the potential of the connection portion between the two can be measured by the monitor 146. The resistance values of the resistors 142 and 144 are set to R2 and R, respectively.
3, the potential V2 of the lower electrode 104 is V2 = ((R2 + R
3) / R3) × V1
【００２４】ここで，抵抗体１４８の抵抗値をＲ１とす
ると，Ｒ２＞＞Ｒ１（例えばＲ２は数ＭΩ，Ｒ１は数Ｋ
Ω）の場合には，下部電極１０４とフォーカスリング１
２０の電位は，ＤＣ的に略同電位となる。また，フォー
カスリング１２０は，プラズマにより生ずる自己バイア
ス電圧により半導体ウエハＷとＤＣ的に略同電位であ
る。よって，下部電極１０４と半導体ウエハＷは略同電
位となるため，両者間にＤＣ放電が発生することはな
い。Assuming that the resistance value of the resistor 148 is R1, R2 >> R1 (for example, R2 is several MΩ and R1 is several K).
Ω), the lower electrode 104 and the focus ring 1
The potential of 20 becomes substantially the same potential in terms of DC. Further, the focus ring 120 has substantially the same DC potential as the semiconductor wafer W due to the self-bias voltage generated by the plasma. Therefore, since the lower electrode 104 and the semiconductor wafer W have substantially the same potential, DC discharge does not occur between them.
【００２５】さらに，モニタ１４６で電位Ｖ１を測定
し，上記計算式より，下部電極１０４の電位Ｖ２を求め
ることで，プラズマ処理時の半導体ウエハＷに生ずる自
己バイアス電圧に近い値をモニタすることができ，この
自己バイアス電圧をフィードバックして，高周波電源１
１４により印加する電力を変更するなど，プラズマの制
御が可能となる。Further, the potential V1 is measured by the monitor 146 and the potential V2 of the lower electrode 104 is obtained from the above calculation formula, whereby a value close to the self-bias voltage generated in the semiconductor wafer W during plasma processing can be monitored. Yes, by feeding back this self-bias voltage, the high frequency power supply 1
The plasma can be controlled by changing the power to be applied by 14.
【００２６】また，抵抗体１４８の抵抗値Ｒ１は，Ｒ２
＞＞Ｒ１，かつ，１／ωＣ＜＜Ｒ１（ωは高周波の角周
波数，Ｃはプラズマエッチング装置１００のフォーカス
リング１２０，下部電極１０４間のキャパシタンス）を
満たせば，抵抗体１４８にほとんど高周波電流が流れず
に，下部電極１０４に印加された例えば１３．５６ＭＨ
ｚの高周波電力がフォーカスリング１２０に伝導され
る。よって，フォーカスリング１２０と半導体ウエハＷ
との間でＤＣ放電が生じたり，プラズマ状態に影響を及
ぼして，半導体ウエハＷにダメージを与えることもなく
なる。The resistance value R1 of the resistor 148 is R2
>> R1, and 1 / ωC << R1 (ω is a high-frequency angular frequency, C is a capacitance between the focus ring 120 and the lower electrode 104 of the plasma etching apparatus 100), a high-frequency current is almost supplied to the resistor 148. Applied to the lower electrode 104 without flowing, eg 13.56 MH
The high frequency power of z is conducted to the focus ring 120. Therefore, the focus ring 120 and the semiconductor wafer W
There is no possibility of causing a DC discharge between them and affecting the plasma state and damaging the semiconductor wafer W.
【００２７】（第３の実施の形態）図４は，第３の実施
の形態にかかるプラズマエッチング装置１００の外観を
示す概略図である。内部の構成，およびプラズマ処理方
法について，第１，第２の実施の形態と同様な部分につ
いては説明を省略する。(Third Embodiment) FIG. 4 is a schematic view showing the external appearance of a plasma etching apparatus 100 according to the third embodiment. Regarding the internal structure and the plasma processing method, the description of the same parts as those in the first and second embodiments will be omitted.
【００２８】図４に示すように，プラズマエッチング装
置１００の処理容器１０２の上部には，メインテナンス
時に内部の調整，部品交換，清浄などが可能なように，
扉１７２が設けられている。As shown in FIG. 4, in the upper part of the processing container 102 of the plasma etching apparatus 100, the inside can be adjusted, parts can be replaced, and cleaning can be performed during maintenance.
A door 172 is provided.
【００２９】プラズマエッチング装置１００内部の下部
電極（図示せず）には，整合器１１２を介して，高周波
電源１１４から高周波電力が印加される。一方スイッチ
１７４には，リレーボックス１６０が接続されている。
リレーボックス１６０には，プラズマエッチング装置１
００の下部電極の接地をオン及びオフするリレー１６２
が備えられている。High frequency power is applied from a high frequency power supply 114 to a lower electrode (not shown) inside the plasma etching apparatus 100 via a matching unit 112. On the other hand, the relay box 160 is connected to the switch 174.
The relay box 160 includes a plasma etching apparatus 1
162 for turning on and off the grounding of the lower electrode of 00
Is provided.
【００３０】下部電極には，熱交換媒体導入排出管６６
より内部に温度調節用の熱交換媒体が循環しているた
め，高周波電力が高周波電源１１４により印加されてい
ないときにも，静電気の蓄積により帯電しやすい状態と
なっている。よって，扉１７２が開状態になると，作業
員が下部電極に触れる可能性があるため，スイッチ１７
４からの信号に従いリレー１６２は下部電極を接地し
て，下部電極に蓄えられた静電気を逃がし，帯電を防止
する。The lower electrode has a heat exchange medium introduction and discharge pipe 66.
Since the heat exchange medium for temperature adjustment is circulated inside, even when the high frequency power is not applied by the high frequency power supply 114, it is in a state of being easily charged due to the accumulation of static electricity. Therefore, when the door 172 is opened, a worker may touch the lower electrode.
According to the signal from 4, the relay 162 grounds the lower electrode to release static electricity stored in the lower electrode and prevent charging.
【００３１】上記構成により，メインテナンス時に扉１
７２を開けると，リレーボックス１６０が作動して下部
電極を接地させるので，作業者が電荷を感ずることな
く，不快感が少ない状態で作業を行える。With the above configuration, the door 1 is maintained during maintenance.
When the door 72 is opened, the relay box 160 operates and the lower electrode is grounded, so that the operator can work without feeling any electric charge and with less discomfort.
【００３２】以上，添付図面を参照しながら本発明にか
かるプラズマ処理装置およびプラズマ処理方法の好適な
実施形態について説明したが，本発明はかかる例に限定
されない。当業者であれば，特許請求の範囲に記載され
た技術的思想の範疇内において各種の変更例または修正
例に想到し得ることは明らかであり，それらについても
当然に本発明の技術的範囲に属するものと了解される。Although the preferred embodiments of the plasma processing apparatus and the plasma processing method according to the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to such examples. It is obvious to those skilled in the art that various changes or modifications can be conceived within the scope of the technical idea described in the claims, and naturally, these are also within the technical scope of the present invention. It is understood that it belongs.
【００３３】例えば，上記実施の形態においては，プラ
ズマエッチング装置で半導体ウエハを処理する場合を例
にして説明したが，液晶表示装置の製造工程で，プラズ
マ処理が行われる場合や，成膜処理を行う場合等にも本
発明は適用が可能である。For example, in the above-described embodiment, the case where the semiconductor wafer is processed by the plasma etching apparatus has been described as an example, but in the manufacturing process of the liquid crystal display device, the case where the plasma processing is performed or the film forming processing is performed. The present invention can also be applied to the case where it is performed.
【００３４】また，例えばメインテナンス用の扉１７２
の配置，構成や，回路１３０，１４０，リレーボックス
１６０内部の構成などは，上記の例に限定されず，同様
の作用，効果を得られるものであれば本発明の範囲であ
る。Further, for example, a door 172 for maintenance
The arrangement and configuration, the internal configuration of the circuits 130 and 140, the internal configuration of the relay box 160, and the like are not limited to the above examples, and are within the scope of the present invention as long as the same action and effect can be obtained.
【００３５】[0035]
【発明の効果】以上説明したように，本発明によれば，
プラズマ処理装置内に備えられる電極の帯電を防ぎ，異
常放電や，被処理体へのダメージ，およびメインテナン
ス時の感電の危険性を排除することが可能なプラズマ処
理装置およびプラズマ処理方法が提供できる。As described above, according to the present invention,
It is possible to provide a plasma processing apparatus and a plasma processing method capable of preventing charging of an electrode provided in the plasma processing apparatus, and eliminating the risk of abnormal discharge, damage to an object to be processed, and electric shock during maintenance.
【図１】第１の実施の形態にかかるプラズマエッチング
装置１００の構成を示す概略断面図である。FIG. 1 is a schematic cross-sectional view showing the configuration of a plasma etching apparatus 100 according to a first embodiment.
【図２】高周波電源１１４およびリレー１３４のオンオ
フ状態を示す図である。FIG. 2 is a diagram showing an on / off state of a high frequency power supply 114 and a relay 134.
【図３】第２の実施の形態にかかる下部電極１０４周辺
の部分概略断面図である。FIG. 3 is a partial schematic cross-sectional view around a lower electrode 104 according to a second embodiment.
【図４】第３の実施の形態にかかるプラズマエッチング
装置１００の外観を示す概略図である。FIG. 4 is a schematic diagram showing an appearance of a plasma etching apparatus 100 according to a third embodiment.
【図５】プラズマエッチング装置１０の概略断面図であ
る。5 is a schematic sectional view of the plasma etching apparatus 10. FIG.
１００ プラズマエッチング装置 １０２ 処理容器 １０４ 下部電極 １１４ 高周波電源 １２０ フォーカスリング １３０ 回路 １３２ 抵抗 １３４ リレー 100 plasma etching equipment 102 processing container 104 Lower electrode 114 high frequency power supply 120 focus ring 130 circuits 132 resistance 134 relay
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K030 FA03 KA30 5F004 AA16 BA04 BB18 BC08 BD04 5F045 AA08 DP03 DQ10 EH20 EM09 ─────────────────────────────────────────────────── ─── Continued front page F-term (reference) 4K030 FA03 KA30 5F004 AA16 BA04 BB18 BC08 BD04 5F045 AA08 DP03 DQ10 EH20 EM09
Claims (11)
に前記処理容器内にある被処理体を設置する電極に高周
波電力を印加して前記処理ガスのプラズマを形成し，前
記被処理体の処理面に対して所定のプラズマ処理を施す
プラズマ処理装置であって，前記高周波電力が印加され
る電極は，抵抗及び，前記抵抗に直列に接続された回路
開閉手段を介して接地されていることを特徴とするプラ
ズマ処理装置。1. A processing gas is introduced into a processing container, and high-frequency power is applied to an electrode for installing a processing object in the processing container to form plasma of the processing gas to process the processing object. A plasma processing apparatus for performing a predetermined plasma processing on a surface, wherein the electrode to which the high frequency power is applied is grounded via a resistance and a circuit opening / closing means connected in series to the resistance. Characteristic plasma processing device.
電極間に伝熱ガスを供給する伝熱ガス経路が設けられて
いることを特徴とする請求項１に記載のプラズマ処理装
置。2. The plasma processing apparatus according to claim 1, wherein a heat transfer gas path for supplying heat transfer gas between the object to be processed and the electrode is provided inside the electrode.
をする媒体の循環路が設けられていることを特徴とする
請求項１，２のいずれかに記載のプラズマ処理装置。3. The plasma processing apparatus according to claim 1, wherein a circulation path for a medium for controlling the temperature of the electrode is provided inside the electrode.
１００メガオーム以下であることを特徴とする請求項１
に記載のプラズマ処理装置。4. The resistance value of the resistor is not less than 1 kilohm and not more than 100 megohm.
The plasma processing apparatus according to.
に前記処理容器内にある被処理体を設置する電極に高周
波電力を印加して前記処理ガスのプラズマを形成し，前
記被処理体の処理面に対して所定のプラズマ処理を施す
プラズマ処理装置であって，前記高周波電力が印加され
る電極と，前記被処理体の周囲に設けられる非絶縁性部
材とを接続する，第１の抵抗体を有することを特徴とす
るプラズマ処理装置。5. The processing gas is introduced into the processing container, and high-frequency power is applied to an electrode for installing the processing object in the processing container to form plasma of the processing gas to process the processing object. A plasma processing apparatus for performing a predetermined plasma processing on a surface, the first resistance body connecting an electrode to which the high-frequency power is applied and a non-insulating member provided around the object to be processed. A plasma processing apparatus comprising:
抵抗体より大きな抵抗値を有する第２の抵抗体を有する
ことを特徴とする請求項５に記載のプラズマ処理装置。6. The plasma processing apparatus according to claim 5, wherein the circuit that grounds the electrode includes a second resistor having a resistance value larger than that of the first resistor.
以上５００キロオーム以下であることを特徴とする請求
項５に記載のプラズマ処理装置。7. The plasma processing apparatus according to claim 5, wherein the resistance value of the first resistor is 1 ohm or more and 500 kilo ohms or less.
に前記処理容器内にある被処理体を設置する電極に高周
波電力を印加して前記処理ガスのプラズマを形成し，前
記被処理体の処理面に対して所定のプラズマ処理を施す
プラズマ処理装置であって，前記プラズマ処理装置のメ
インテナンス用に設けられた扉の開閉と連動した，前記
高周波電力が印加される電極に接続された接地回路の開
閉手段を有することを特徴とするプラズマ処理装置。8. A processing gas is introduced into the processing container, and high-frequency power is applied to an electrode in the processing container where the object to be processed is installed to form plasma of the processing gas to process the object. A plasma processing apparatus for applying a predetermined plasma processing to a surface of a ground circuit connected to an electrode to which the high-frequency power is applied, which is interlocked with opening and closing of a door provided for maintenance of the plasma processing apparatus. A plasma processing apparatus having an opening / closing means.
に前記処理容器内にある被処理体を設置する電極に高周
波電力を印加して前記処理ガスのプラズマを形成し，前
記被処理体の処理面に対して所定のプラズマ処理を施す
プラズマ処理方法であって，前記高周波電力が印加され
る電極は，前記高周波電力が印加されていないときに
は，抵抗を介して接地され，前記高周波電力が印加され
ているときには開放されることを特徴とするプラズマ処
理方法。9. A process gas is introduced into a processing container, and high-frequency power is applied to an electrode in the processing container where the object to be processed is installed to form plasma of the processing gas, thereby processing the object to be processed. In a plasma processing method for applying a predetermined plasma processing to a surface, the electrode to which the high frequency power is applied is grounded via a resistor when the high frequency power is not applied, and the high frequency power is applied. The plasma processing method is characterized in that the plasma processing method is opened during operation.
もに前記処理容器内にある被処理体を設置する電極に高
周波電力を印加して前記処理ガスのプラズマを形成し，
前記被処理体の処理面に対して所定のプラズマ処理を施
すプラズマ処理方法であって，前記プラズマ処理装置の
メインテナンス用に設けられた扉が開くと，前記高周波
電力が印加される電極を接地することを特徴とするプラ
ズマ処理方法。10. A processing gas is introduced into the processing container, and high-frequency power is applied to an electrode in the processing container on which an object to be processed is installed to form plasma of the processing gas,
A plasma processing method for performing a predetermined plasma processing on a processing surface of an object to be processed, wherein an electrode to which the high-frequency power is applied is grounded when a door provided for maintenance of the plasma processing apparatus is opened. A plasma processing method characterized by the above.
もに前記処理容器内にあり，抵抗及び前記抵抗に直列に
接続された回路開閉手段を介して接地された，被処理体
を設置する電極に高周波電力を印加して前記処理ガスの
プラズマを形成し，前記被処理体の処理面に対して所定
のプラズマ処理を施すプラズマ処理方法であって，前記
電極を抵抗を介して接地している回路開閉手段を開放す
る工程と，前記電極に高周波電力を印加する工程と，前
記電極への高周波電力印加を停止する工程と，前記高周
波電力印加の停止後，前記回路開閉手段を接続し，前記
電極を前記抵抗を介して接地する工程と，を有すること
を特徴とするプラズマ処理方法。11. An electrode on which an object to be processed is installed, which is for introducing a processing gas into the processing container and is grounded via a resistance and a circuit opening / closing means connected in series to the resistance, in the processing container. A circuit in which a high-frequency power is applied to form a plasma of the processing gas, and a predetermined plasma processing is performed on a processing surface of the object to be processed, the electrode being grounded through a resistor. Opening the opening / closing means, applying high frequency power to the electrode, stopping applying high frequency power to the electrode, and after stopping application of the high frequency power, connecting the circuit opening / closing means to connect the electrode And a step of grounding via a resistor.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002115138A JP2003309110A (en) | 2002-04-17 | 2002-04-17 | Method and apparatus for plasma treatment |
| AU2003213427A AU2003213427A1 (en) | 2002-04-17 | 2003-03-18 | Plasma processing device and plasma processing method |
| PCT/JP2003/003277 WO2003088338A1 (en) | 2002-04-17 | 2003-03-18 | Plasma processing device and plasma processing method |
| TW92107555A TW200306612A (en) | 2002-04-17 | 2003-04-02 | Plasma processing device and plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002115138A JP2003309110A (en) | 2002-04-17 | 2002-04-17 | Method and apparatus for plasma treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003309110A true JP2003309110A (en) | 2003-10-31 |
Family
ID=29243413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002115138A Withdrawn JP2003309110A (en) | 2002-04-17 | 2002-04-17 | Method and apparatus for plasma treatment |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2003309110A (en) |
| AU (1) | AU2003213427A1 (en) |
| TW (1) | TW200306612A (en) |
| WO (1) | WO2003088338A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010103431A (en) * | 2008-10-27 | 2010-05-06 | Dainippon Printing Co Ltd | Method for manufacturing semiconductor element, method for processing semiconductor substrate and dry etching apparatus |
| KR20110110006A (en) * | 2010-03-30 | 2011-10-06 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and semiconductor device manufacturing method |
| JP2011238825A (en) * | 2010-05-12 | 2011-11-24 | Tokyo Electron Ltd | Plasma processing device and method of manufacturing semiconductor device |
| JP2014022518A (en) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | Lower electrode and plasma processing device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08293486A (en) * | 1995-04-24 | 1996-11-05 | Hitachi Ltd | Method of vacuum processing and device |
| US5942039A (en) * | 1997-05-01 | 1999-08-24 | Applied Materials, Inc. | Self-cleaning focus ring |
| JP4592916B2 (en) * | 2000-04-25 | 2010-12-08 | 東京エレクトロン株式会社 | Placement device for workpiece |
-
2002
- 2002-04-17 JP JP2002115138A patent/JP2003309110A/en not_active Withdrawn
-
2003
- 2003-03-18 WO PCT/JP2003/003277 patent/WO2003088338A1/en active Application Filing
- 2003-03-18 AU AU2003213427A patent/AU2003213427A1/en not_active Abandoned
- 2003-04-02 TW TW92107555A patent/TW200306612A/en unknown
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010103431A (en) * | 2008-10-27 | 2010-05-06 | Dainippon Printing Co Ltd | Method for manufacturing semiconductor element, method for processing semiconductor substrate and dry etching apparatus |
| KR20110110006A (en) * | 2010-03-30 | 2011-10-06 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and semiconductor device manufacturing method |
| JP2011210958A (en) * | 2010-03-30 | 2011-10-20 | Tokyo Electron Ltd | Plasma processing apparatus and method of manufacturing semiconductor device |
| US9021984B2 (en) | 2010-03-30 | 2015-05-05 | Tokyo Electron Limited | Plasma processing apparatus and semiconductor device manufacturing method |
| KR101695037B1 (en) * | 2010-03-30 | 2017-01-10 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and semiconductor device manufacturing method |
| JP2011238825A (en) * | 2010-05-12 | 2011-11-24 | Tokyo Electron Ltd | Plasma processing device and method of manufacturing semiconductor device |
| US9011637B2 (en) | 2010-05-12 | 2015-04-21 | Tokyo Electron Limited | Plasma processing apparatus and method of manufacturing semiconductor device |
| US9142391B2 (en) | 2010-05-12 | 2015-09-22 | Tokyo Electron Limited | Method of manufacturing semiconductor device |
| KR101812646B1 (en) * | 2010-05-12 | 2017-12-27 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and method of manufacturing semiconductor device |
| JP2014022518A (en) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | Lower electrode and plasma processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003213427A1 (en) | 2003-10-27 |
| TW200306612A (en) | 2003-11-16 |
| WO2003088338A1 (en) | 2003-10-23 |
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