KR101035248B1 - 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 - Google Patents

플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 Download PDF

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KR101035248B1
KR101035248B1 KR1020080088672A KR20080088672A KR101035248B1 KR 101035248 B1 KR101035248 B1 KR 101035248B1 KR 1020080088672 A KR1020080088672 A KR 1020080088672A KR 20080088672 A KR20080088672 A KR 20080088672A KR 101035248 B1 KR101035248 B1 KR 101035248B1
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South Korea
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high frequency
frequency power
power supply
output
oscillator
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KR20090026735A (ko
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다나카 세이지
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020080088672A 2007-09-10 2008-09-09 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 Active KR101035248B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007234365A JP4905304B2 (ja) 2007-09-10 2007-09-10 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JPJP-P-2007-00234365 2007-09-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020100102484A Division KR20100119851A (ko) 2007-09-10 2010-10-20 플라즈마 처리 장치

Publications (2)

Publication Number Publication Date
KR20090026735A KR20090026735A (ko) 2009-03-13
KR101035248B1 true KR101035248B1 (ko) 2011-05-18

Family

ID=40478273

Family Applications (2)

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KR1020080088672A Active KR101035248B1 (ko) 2007-09-10 2008-09-09 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
KR1020100102484A Withdrawn KR20100119851A (ko) 2007-09-10 2010-10-20 플라즈마 처리 장치

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KR1020100102484A Withdrawn KR20100119851A (ko) 2007-09-10 2010-10-20 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP4905304B2 (enExample)
KR (2) KR101035248B1 (enExample)
CN (1) CN101389179B (enExample)
TW (1) TWI488545B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102450733B1 (ko) * 2022-05-04 2022-10-06 (주)알에프티에스아이 탄화 방지 시스템이 구비된 RF Generator

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5141519B2 (ja) * 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP4891384B2 (ja) * 2009-12-10 2012-03-07 株式会社新川 プラズマ発生装置
JP5691081B2 (ja) * 2010-04-02 2015-04-01 株式会社アルバック 成膜装置
JP6029302B2 (ja) * 2012-03-29 2016-11-24 株式会社ダイヘン マイクロ波電力供給装置
KR20140066483A (ko) * 2012-11-23 2014-06-02 엘아이지에이디피 주식회사 유도 결합 플라즈마 처리 장치 및 그 제어방법
JP6144917B2 (ja) * 2013-01-17 2017-06-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP5704772B1 (ja) * 2014-02-04 2015-04-22 株式会社京三製作所 高周波電源装置およびプラズマ着火方法
JP2016225439A (ja) * 2015-05-29 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置及び基板剥離検知方法
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
JP6667343B2 (ja) * 2016-03-30 2020-03-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP7515423B2 (ja) 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
JP7671680B2 (ja) * 2021-10-29 2025-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Citations (4)

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JP2000331798A (ja) 1999-05-24 2000-11-30 Fuji Electric Co Ltd 高周波電源の制御方法
JP2003064477A (ja) * 2001-08-20 2003-03-05 Sony Corp 電源制御装置および電源制御方法
JP2003264180A (ja) 2002-03-12 2003-09-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理停止方法
JP2004220923A (ja) 2003-01-15 2004-08-05 Ulvac Japan Ltd 異常放電検出装置と検出方法、及び該異常放電検出装置を備えたプラズマ処理装置

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US6222718B1 (en) * 1998-11-12 2001-04-24 Lam Research Corporation Integrated power modules for plasma processing systems
JP3377773B2 (ja) * 2000-03-24 2003-02-17 三菱重工業株式会社 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法
WO2003037047A1 (en) * 2001-10-22 2003-05-01 Shibaura Mechatronics Corporation Method for judging arc of glow discharger and high-frequency arc discharge suppressor
JP4024636B2 (ja) * 2002-09-20 2007-12-19 富士通株式会社 有機系絶縁膜のエッチング方法及び半導体装置の製造方法
JP3905870B2 (ja) * 2003-08-01 2007-04-18 東京エレクトロン株式会社 プラズマ処理装置
JP4359521B2 (ja) * 2004-02-20 2009-11-04 東京エレクトロン株式会社 プラズマ処理装置及びその制御方法
CN100543944C (zh) * 2004-04-30 2009-09-23 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
US7292045B2 (en) * 2004-09-04 2007-11-06 Applied Materials, Inc. Detection and suppression of electrical arcing
JP4597886B2 (ja) * 2005-02-24 2010-12-15 イーエヌ テクノロジー インコーポレイテッド プラズマ電源装置用アークエネルギー制御回路
JP4827081B2 (ja) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000331798A (ja) 1999-05-24 2000-11-30 Fuji Electric Co Ltd 高周波電源の制御方法
JP2003064477A (ja) * 2001-08-20 2003-03-05 Sony Corp 電源制御装置および電源制御方法
JP2003264180A (ja) 2002-03-12 2003-09-19 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理停止方法
JP2004220923A (ja) 2003-01-15 2004-08-05 Ulvac Japan Ltd 異常放電検出装置と検出方法、及び該異常放電検出装置を備えたプラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102450733B1 (ko) * 2022-05-04 2022-10-06 (주)알에프티에스아이 탄화 방지 시스템이 구비된 RF Generator

Also Published As

Publication number Publication date
TW200932067A (en) 2009-07-16
KR20100119851A (ko) 2010-11-11
CN101389179B (zh) 2011-11-30
CN101389179A (zh) 2009-03-18
JP2009070844A (ja) 2009-04-02
TWI488545B (zh) 2015-06-11
JP4905304B2 (ja) 2012-03-28
KR20090026735A (ko) 2009-03-13

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