TWI487058B - 用於半導體基體上各種材質之分層沉積的裝置以及用於該裝置之升降銷 - Google Patents

用於半導體基體上各種材質之分層沉積的裝置以及用於該裝置之升降銷 Download PDF

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Publication number
TWI487058B
TWI487058B TW097136279A TW97136279A TWI487058B TW I487058 B TWI487058 B TW I487058B TW 097136279 A TW097136279 A TW 097136279A TW 97136279 A TW97136279 A TW 97136279A TW I487058 B TWI487058 B TW I487058B
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor substrate
lift pin
support
layer
Prior art date
Application number
TW097136279A
Other languages
English (en)
Chinese (zh)
Other versions
TW200924105A (en
Inventor
Munster Marcus Gerardus Van
Charles Petronella Marie Buijs
Age Leijenaar
Original Assignee
Xycarb Ceramics Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xycarb Ceramics Bv filed Critical Xycarb Ceramics Bv
Publication of TW200924105A publication Critical patent/TW200924105A/zh
Application granted granted Critical
Publication of TWI487058B publication Critical patent/TWI487058B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW097136279A 2007-11-30 2008-09-22 用於半導體基體上各種材質之分層沉積的裝置以及用於該裝置之升降銷 TWI487058B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1034780A NL1034780C2 (nl) 2007-11-30 2007-11-30 Inrichting voor het laagsgewijs laten neerslaan van verschillende materialen op een halfgeleider-substraat alsmede een hefpin voor toepassing in een dergelijke inrichting.

Publications (2)

Publication Number Publication Date
TW200924105A TW200924105A (en) 2009-06-01
TWI487058B true TWI487058B (zh) 2015-06-01

Family

ID=39556262

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097136279A TWI487058B (zh) 2007-11-30 2008-09-22 用於半導體基體上各種材質之分層沉積的裝置以及用於該裝置之升降銷

Country Status (8)

Country Link
US (1) US8858715B2 (nl)
EP (1) EP2217741A1 (nl)
JP (1) JP5405481B2 (nl)
KR (1) KR101511025B1 (nl)
CN (1) CN101878323A (nl)
NL (1) NL1034780C2 (nl)
TW (1) TWI487058B (nl)
WO (1) WO2009070006A1 (nl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130269877A1 (en) * 2012-04-16 2013-10-17 Yao Hua SUN Semiconductor processing apparatus
US10431489B2 (en) * 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
JP6520050B2 (ja) * 2014-10-31 2019-05-29 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
JP6507573B2 (ja) * 2014-10-31 2019-05-08 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
KR101548903B1 (ko) 2015-03-19 2015-09-04 (주)코미코 리프트 핀 및 이의 제조 방법
KR200493645Y1 (ko) * 2015-03-31 2021-05-07 어플라이드 머티어리얼스, 인코포레이티드 비-스크래칭의 내구성 기판 지지 핀
JP6435992B2 (ja) * 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
JP6451508B2 (ja) * 2015-05-29 2019-01-16 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン
US10490436B2 (en) * 2015-11-04 2019-11-26 Applied Materials, Inc. Enhanced lift pin design to eliminate local thickness non-uniformity in teos oxide films
JP6766893B2 (ja) * 2017-02-02 2020-10-14 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびシリコンエピタキシャルウェーハの製造方法
JP6832739B2 (ja) * 2017-02-21 2021-02-24 東京エレクトロン株式会社 基板処理装置
KR102257661B1 (ko) * 2019-05-13 2021-05-28 주식회사 원익큐엔씨 유리 기판 지지용 지지핀
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
JP2021089933A (ja) * 2019-12-03 2021-06-10 信越半導体株式会社 気相成長装置
KR20240056841A (ko) * 2021-09-22 2024-04-30 램 리써치 코포레이션 기판들로부터의 잔류물 제거를 위한 인­시츄 후면 플라즈마 처리

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596086B1 (en) * 1998-04-28 2003-07-22 Shin-Etsu Handotai Co., Ltd. Apparatus for thin film growth
US20030162462A1 (en) * 2002-02-22 2003-08-28 Lg.Philips Lcd Co., Ltd. Apparatus and method for manufacturing liquid crystal display devices, method for using the apparatus, and device produced by the method
US20030178145A1 (en) * 2002-03-25 2003-09-25 Applied Materials, Inc. Closed hole edge lift pin and susceptor for wafer process chambers

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6374960A (ja) * 1986-09-17 1988-04-05 電気化学工業株式会社 ガラス状炭素被覆炭素材
EP0763504B1 (en) * 1995-09-14 1999-06-02 Heraeus Quarzglas GmbH Silica glass member and method for producing the same
US5900062A (en) * 1995-12-28 1999-05-04 Applied Materials, Inc. Lift pin for dechucking substrates
JP3092801B2 (ja) * 1998-04-28 2000-09-25 信越半導体株式会社 薄膜成長装置
US5916370A (en) * 1998-06-12 1999-06-29 Applied Materials, Inc. Semiconductor processing chamber having diamond coated components
JP4681763B2 (ja) * 2001-06-27 2011-05-11 住友化学株式会社 基板固定用チャックおよびこのチャックからの基板剥離方法
JP3672300B2 (ja) * 2001-10-30 2005-07-20 アプライド マテリアルズ インコーポレイテッド 薄膜成長装置用のリフトピン、その形成方法およびリフトピン頭部
JP2003197721A (ja) * 2001-12-26 2003-07-11 Ulvac Japan Ltd 基板支持用昇降ピン及びこれを用いた多室型成膜装置
JP2003218003A (ja) * 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
JP4330949B2 (ja) * 2003-07-01 2009-09-16 東京エレクトロン株式会社 プラズマｃｖｄ成膜方法
KR20050077171A (ko) * 2004-01-27 2005-08-01 삼성전자주식회사 반도체 식각 설비의 리프트 핀 조립체
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US20060113806A1 (en) * 2004-11-29 2006-06-01 Asm Japan K.K. Wafer transfer mechanism

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596086B1 (en) * 1998-04-28 2003-07-22 Shin-Etsu Handotai Co., Ltd. Apparatus for thin film growth
US20030162462A1 (en) * 2002-02-22 2003-08-28 Lg.Philips Lcd Co., Ltd. Apparatus and method for manufacturing liquid crystal display devices, method for using the apparatus, and device produced by the method
US20030178145A1 (en) * 2002-03-25 2003-09-25 Applied Materials, Inc. Closed hole edge lift pin and susceptor for wafer process chambers

Also Published As

Publication number Publication date
JP2011505691A (ja) 2011-02-24
NL1034780C2 (nl) 2009-06-03
US20110056436A1 (en) 2011-03-10
WO2009070006A1 (en) 2009-06-04
JP5405481B2 (ja) 2014-02-05
US8858715B2 (en) 2014-10-14
KR20100113069A (ko) 2010-10-20
TW200924105A (en) 2009-06-01
KR101511025B1 (ko) 2015-04-10
CN101878323A (zh) 2010-11-03
EP2217741A1 (en) 2010-08-18

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