TWI484287B - 光罩基底、轉印用光罩及其等之製造方法 - Google Patents

光罩基底、轉印用光罩及其等之製造方法 Download PDF

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Publication number
TWI484287B
TWI484287B TW099128521A TW99128521A TWI484287B TW I484287 B TWI484287 B TW I484287B TW 099128521 A TW099128521 A TW 099128521A TW 99128521 A TW99128521 A TW 99128521A TW I484287 B TWI484287 B TW I484287B
Authority
TW
Taiwan
Prior art keywords
light
film
layer
reflection preventing
substrate
Prior art date
Application number
TW099128521A
Other languages
English (en)
Chinese (zh)
Other versions
TW201137514A (en
Inventor
野澤順
Original Assignee
Ｈｏｙａ股份有限公司
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Publication of TW201137514A publication Critical patent/TW201137514A/zh
Application granted granted Critical
Publication of TWI484287B publication Critical patent/TWI484287B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
TW099128521A 2009-08-25 2010-08-25 光罩基底、轉印用光罩及其等之製造方法 TWI484287B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009194701 2009-08-25
JP2009207736 2009-09-09

Publications (2)

Publication Number Publication Date
TW201137514A TW201137514A (en) 2011-11-01
TWI484287B true TWI484287B (zh) 2015-05-11

Family

ID=43625428

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099128521A TWI484287B (zh) 2009-08-25 2010-08-25 光罩基底、轉印用光罩及其等之製造方法

Country Status (4)

Country Link
US (1) US8354205B2 (https=)
JP (1) JP5714266B2 (https=)
KR (1) KR20110021687A (https=)
TW (1) TWI484287B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524421B2 (en) 2010-03-30 2013-09-03 Hoya Corporation Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
US8435704B2 (en) * 2010-03-30 2013-05-07 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
JP5920965B2 (ja) * 2011-05-20 2016-05-24 Hoya株式会社 マスクブランクの製造方法、転写用マスク用の製造方法、および半導体デバイスの製造方法
JP6058318B2 (ja) * 2011-09-14 2017-01-11 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
WO2013190444A2 (en) * 2012-06-18 2013-12-27 Indian Institute Of Technology Kanpur Systems and methods for dry processing fabrication of binary masks with arbitrary shapes for ultra-violet laser micromachining
US9726972B2 (en) * 2013-09-10 2017-08-08 Hoya Corporation Mask blank, transfer mask, and method for manufacturing transfer mask
JP6521703B2 (ja) * 2014-04-11 2019-05-29 キヤノン株式会社 振動型アクチュエータの製造方法、振動型アクチュエータを搭載する画像形成装置
KR102447144B1 (ko) * 2015-01-09 2022-09-26 삼성전자주식회사 포토 마스크 제조 방법, 포토레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법
JP6728919B2 (ja) * 2015-04-14 2020-07-22 大日本印刷株式会社 フォトマスクおよびフォトマスクの製造方法
JP6140330B2 (ja) * 2016-04-08 2017-05-31 Hoya株式会社 マスクブランクの製造方法、転写用マスク用の製造方法、および半導体デバイスの製造方法
SG11201811413QA (en) * 2016-07-25 2019-02-27 Hoya Corp Mask blank, transfer mask, method for producing transfer mask, and method for manufacturing semiconductor device
KR102594844B1 (ko) 2018-04-10 2023-10-27 주식회사 엘지화학 장식 부재
JP6938428B2 (ja) * 2018-05-30 2021-09-22 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6636581B2 (ja) * 2018-08-01 2020-01-29 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
KR102377406B1 (ko) 2021-05-21 2022-03-21 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
CN115586705B (zh) * 2021-07-05 2026-03-03 上海芯上微装科技股份有限公司 一种曝光方法及显示面板
JP7482197B2 (ja) * 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド ブランクマスク及びそれを用いたフォトマスク
KR102554083B1 (ko) * 2022-06-23 2023-07-10 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크

Citations (4)

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US5920244A (en) * 1996-01-23 1999-07-06 Murata Manufacturing Co., Ltd. Thin-film multilayered electrode, high-frequency resonator, and high-frequency transmission line
US20050208389A1 (en) * 2002-04-11 2005-09-22 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
TW200609667A (en) * 2004-09-10 2006-03-16 Shinetsu Chemical Co Photomask blank, photomask and method for manufacturing same
KR20070114025A (ko) * 2006-05-25 2007-11-29 주식회사 에스앤에스텍 블랭크 마스크 및 블랭크 마스크 제조 방법

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JP3417427B2 (ja) * 1994-07-08 2003-06-16 ソニー株式会社 光導波路装置、及び光導波路装置又は光導波路の製造方法
US5995127A (en) * 1994-09-13 1999-11-30 Kabushiki Kaisha Toshiba Thermal print head and manufacturing method thereof
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP4635610B2 (ja) * 2005-01-07 2011-02-23 凸版印刷株式会社 反射型フォトマスクブランク、反射型フォトマスク、及び反射型フォトマスクの製造方法
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
WO2008139904A1 (ja) * 2007-04-27 2008-11-20 Hoya Corporation フォトマスクブランク及びフォトマスク
JP4845978B2 (ja) * 2008-02-27 2011-12-28 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920244A (en) * 1996-01-23 1999-07-06 Murata Manufacturing Co., Ltd. Thin-film multilayered electrode, high-frequency resonator, and high-frequency transmission line
US20050208389A1 (en) * 2002-04-11 2005-09-22 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
TW200609667A (en) * 2004-09-10 2006-03-16 Shinetsu Chemical Co Photomask blank, photomask and method for manufacturing same
KR20070114025A (ko) * 2006-05-25 2007-11-29 주식회사 에스앤에스텍 블랭크 마스크 및 블랭크 마스크 제조 방법

Also Published As

Publication number Publication date
JP5714266B2 (ja) 2015-05-07
JP2011081356A (ja) 2011-04-21
KR20110021687A (ko) 2011-03-04
TW201137514A (en) 2011-11-01
US20110053057A1 (en) 2011-03-03
US8354205B2 (en) 2013-01-15

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