TWI484009B - 用於鎳-磷塗覆之記憶碟之拋光組合物 - Google Patents
用於鎳-磷塗覆之記憶碟之拋光組合物 Download PDFInfo
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- polishing
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- cerium oxide
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- 238000005498 polishing Methods 0.000 title claims description 134
- 239000000203 mixture Substances 0.000 title claims description 106
- 230000015654 memory Effects 0.000 title description 18
- 239000000758 substrate Substances 0.000 claims description 59
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 42
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 42
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 41
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 35
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 34
- 239000002245 particle Substances 0.000 claims description 32
- 239000002738 chelating agent Substances 0.000 claims description 30
- 239000007800 oxidant agent Substances 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 8
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Natural products NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 7
- 230000007062 hydrolysis Effects 0.000 claims description 7
- 238000006460 hydrolysis reaction Methods 0.000 claims description 7
- 239000004471 Glycine Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 3
- 235000004279 alanine Nutrition 0.000 claims description 3
- 125000003630 glycyl group Chemical group [H]N([H])C([H])([H])C(*)=O 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- -1 polyethylene Polymers 0.000 description 10
- 239000012141 concentrate Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000011859 microparticle Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002689 polyvinyl acetate Polymers 0.000 description 2
- 239000011118 polyvinyl acetate Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical group CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- MMNQNDOIORJBNQ-UHFFFAOYSA-N [Ni].[P]=O Chemical compound [Ni].[P]=O MMNQNDOIORJBNQ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- UMGDCJDMYOKAJW-UHFFFAOYSA-N aminothiocarboxamide Natural products NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002085 enols Chemical class 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0104—Chemical-mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
對記憶體或硬碟之增加之儲存容量之要求及記憶體或硬碟小型化(由於對電腦設備中較小硬驅動器之需要)之趨勢持續強調記憶體或硬碟製程之重要性,該製程包括平坦化或拋光該碟以確保最大性能。儘管存在若干種用於半導體器件製造之化學-機械拋光(CMP)組合物及方法,但習用CMP方法或市售CMP組合物極少充分適於平坦化或拋光記憶體或硬碟。
由於對增加之儲存容量之要求增加,因此需要拋光該記憶體或硬碟之經改良製程。術語「記憶體或硬碟」係指用於留存呈電磁形式之資訊之任何磁碟、硬碟片、硬碟或碟記憶碟。記憶體或硬碟通常具有包含鎳-磷之表面,但記憶體或硬碟表面可包含任何其他適宜材料。必須改良記憶體或硬碟之平坦性,此乃因碟驅動器之記錄頭與記憶體或硬碟之表面間之距離隨記錄密度之改良減小,該等改良要求磁頭之浮動高度低於記憶體或硬碟。為達成較低之磁頭浮動高度,需要改良記憶體或硬碟之表面修飾。
改良記憶體或硬碟之表面修飾需要必須減少由研磨劑顆粒造成之刮痕及微缺陷。已有人假設,在拋光墊與所拋光基板間生成之摩擦力導致刮痕及微缺陷增多。然而,意欲降低摩擦力之添加劑之存在通常導致研磨劑顆粒聚結,結果引起刮痕及微缺陷增多。因此,業內需
要展現減少之刮痕及微缺陷且亦展現良好表面地形及可行的移除速率之拋光組合物。
本發明提供化學-機械拋光基板之方法,該方法包含(i)提供包含至少一個鎳-磷層之基板,(ii)提供拋光墊,(iii)提供包含(a)濕法二氧化矽、(b)使鎳-磷氧化之氧化劑、(c)螯合劑、(d)聚乙烯醇、(e)水之拋光組合物,其中該拋光組合物之pH為1至4,(iv)使基板之表面與拋光墊及拋光組合物接觸,及(v)研磨基板表面之至少一部分以自基板表面移除至少一部分鎳-磷且拋光基板之表面。
本發明亦提供化學-機械拋光組合物,其包含(a)濕法二氧化矽;(b)使鎳-磷氧化之氧化劑;(c)螯合劑;(d)聚乙烯醇,其中該聚乙烯醇之分子量為8,000g/mol至50,000g/mol;(e)水,其中該拋光組合物之pH為1至4,且其中該拋光組合物不包含雜環化合物。
本發明提供化學-機械拋光組合物,其包含(a)濕法二氧化矽;(b)使鎳-磷氧化之氧化劑;(c)螯合劑;(d)聚乙烯醇,其中該聚乙烯醇之分子量為8,000g/mol至50,000g/mol;(c)水,基本上由該等物質組成或由該等物質組成,其中該拋光組合物之pH為1至4。
拋光組合物包含濕法二氧化矽顆粒(例如,縮聚型或沈澱型二氧化矽顆粒)。較佳地,濕法二氧化矽顆粒係縮聚型二氧化矽顆粒。縮聚型二氧化矽顆粒通常係藉由縮合Si(OH)4
以形成膠體顆粒來製備,其中膠體定義為具有介於1nm與1000nm之間之平均粒徑。該等研磨劑顆粒可根據美國專利5,230,833來製備或可以任何各種市售產品形式獲得,例如Akzo-Nobel Bindzil 50/80產品及Nalco 1050、1060、2327
及2329產品,以及購自DuPont,Bayer,Applied Research,Nissan Chemical,Fuso,and Clariant之其他類似產品。適宜濕法二氧化矽之其他實例包括(但不限於)XP320、XP442、CC-301及CC401(EKA,Mannheim,Germany)、N1115、N8691、N1030C及N8699(由Nalco公司,Naperville,IL供應)、ST-N及ST-O(Nissan Chemical America,Houston,TX)及Nexsil 20、20A、12、8及5(Nyacol Nano Technologies,Ashland,MA)。在本發明之一實施例中,該濕法二氧化矽可包含兩種或更多種不同類型之二氧化矽顆粒。
二氧化矽顆粒可具有任何適宜的平均粒徑(即,平均顆粒直徑)。二氧化矽顆粒之平均粒徑可為10nm或更大,例如,15nm或更大、20nm或更大或25nm或更大。另一選擇為或此外,二氧化矽之平均粒徑可為80nm或更小,例如,75nm或更小、70nm或更小、60nm或更小、50nm或更小、40nm或更小或30nm或更小。因此,二氧化矽可具有在任兩個上述端點值之範圍內之平均粒徑。例如,二氧化矽之平均粒徑可為10nm至80nm、10nm至70nm、10nm至60nm、10nm至50nm、10nm至40nm、10nm至30nm、20nm至80nm、20nm至60nm、20nm至40nm或20nm至30nm。
拋光組合物可包含任何適量之二氧化矽。通常,拋光組合物可含有0.01wt.%或更多、例如0.05wt.%或更多、0.1wt.%或更多、0.5wt.%或更多或1wt.%或更多之二氧化矽。另一選擇為或此外,拋光組合物可含有10wt.%或更少、例如9wt.%或更少、8wt.%或更少、7wt.%或更少、6wt.%或更少或5wt.%或更少之二氧化矽。因此,拋光組合物可包含在任兩個針對二氧化矽所列舉之上述端點值之範圍內之量之二氧化矽。例如,拋光組合物可包含0.01wt.%至10wt.%、0.5wt.%至10wt.%、1wt.%至10wt.%、0.5wt.%至10wt.%、0.5wt.%至9wt.%、0.5wt.%至8wt.%、0.5wt.%至7wt.%、0.5wt.%至6wt.%、0.5wt.%至5wt.%或1wt.%至5wt.%之二氧化矽。
研磨劑顆粒較佳地具有膠體穩定性。術語膠體係指研磨劑顆粒於液體載劑中之懸浮液。膠體穩定性係指經過一段時間仍能維持該懸浮液形式。在本發明之上下文中,若當將研磨劑置至100ml刻度量筒中並使其無攪動靜置2小時時間時,刻度量筒底部50ml中之顆粒濃度([B],以g/ml表示)與刻度量筒頂部50ml中之顆粒濃度([T],以g/ml表示)之間之差除以研磨劑組合物中顆粒之初始濃度([C],以g/ml表示)小於或等於0.5(即,{[B]-[T]}/[C]0.5),則認為研磨劑具有膠體穩定性。更佳地,[B]-[T]/[C]之值小於或等於0.3,且最佳小於或等於0.1。
拋光組合物包含使鎳-磷氧化之氧化劑。較佳氧化劑係選自由過氧化氫、過氧化脲、過硫酸、過氧乙酸、過硼酸、其鹽及其組合組成之群。更佳地,氧化劑係過氧化氫。通常,拋光組合物可含有0.5wt.%或更多、例如1wt.%或更多或2wt.%或更多之使鎳-磷氧化之氧化劑。另一選擇為或此外,拋光組合物可含有10wt.%或更少、例如8wt.%或更少、或6wt.%或更少或4wt.%或更少之使鎳-磷氧化之氧化劑。因此,拋光組合物可包含在任兩個針對使鎳-磷氧化之氧化劑所列舉之上述端點值之範圍內之量之氧化劑。例如,拋光組合物可包含0.5wt.%至10wt.%、或1wt.%至8wt.%或2wt.%至6wt.%之使鎳-磷氧化之氧化劑。
拋光組合物包含螯合劑。期望地,螯合劑係針對鎳之螯合劑。螯合劑可為任何適宜的螯合劑,尤其任何適宜的針對鎳之螯合劑。螯合劑較佳地經選擇以使拋光組合物在與包含鎳-磷之基板接觸時展現低溶解性質。適宜螯合劑之非限制性實例包括甘胺酸及丙胺酸。在較佳實施例中,螯合劑係甘胺酸。
通常,拋光組合物可含有0.1wt.%或更多、例如0.2wt.%或更多、或0.3wt.%或更多、或0.4wt.%或更多或0.5wt.%或更多之螯合
劑。另一選擇為或此外,拋光組合物可含有2wt.%或更少、例如1.8wt.%或更少、或1.6wt.%或更少、或1.4wt.%或更少、或1.2wt.%或更少或1wt.%或更少之螯合劑。因此,拋光組合物可包含在任兩個針對螯合劑所列舉之上述端點值之範圍內之量之螯合劑。例如,拋光組合物可包含0.1wt.%至2wt.%、或0.2wt.%至1.8wt.%、或0.3wt.%至1.6wt.%、0.4wt.%至1.4wt.%或0.5wt.%至1.2wt.%之螯合劑。
拋光組合物包含聚乙烯醇。聚乙烯醇可為任何適宜的聚乙烯醇。在一些實施例中,聚乙烯醇之分子量為8,000g/mol或更大,例如,10,000g/mol或更大、12,000g/mol或更大或13,000g/mol或更大。在一些實施例中,另一選擇為或此外,聚乙烯醇之分子量為50,000g/mol或更小、例如45,000g/mol或更小、或40,000g/mol或更小、或35,000g/mol或更小、或30,000g/mol或更小、25,000g/mol或更小、或23,000g/mol或更小。因此,在一些實施例中,聚乙烯醇具有在任兩個針對聚乙烯醇所列舉之上述端點值之範圍內之分子量。例如,聚乙烯醇之分子量可為8,000g/mol至50,000g/mol、10,000g/mol至45,000g/mol、10,000g/mol至40,000g/mol、10,000g/mol至35,000g/mol、10,000g/mol至30,000g/mol、12,000g/mol至25,000g/mol或13,000g/mol至23,000g/mol。
聚乙烯醇可具有任何適宜程度之水解。通常,聚乙烯醇之水解程度為90%或更高、或92%或更高、或94%或更高、或96%或更高、或98%或更高。如業內眾所周知,聚乙烯醇通常係藉由水解聚乙酸乙烯酯來製備。水解程度係指已經水解之乙酸根基團佔聚乙酸乙烯酯之百分比。換言之,水解程度係指存於聚乙烯醇中之游離羥基之百分比。
通常,拋光組合物可含有0.1wt.%或更多、例如0.2wt.%或更多、或0.3wt.%或更多、或0.4wt.%或更多、或0.5wt.%或更多之聚乙
烯醇。另一選擇為或此外,拋光組合物可含有2wt.%或更少、例如1.8wt.%或更少、或1.6wt.%或更少、或1.4wt.%或更少、或1.2wt.%或更少、或1wt.%或更少之聚乙烯醇。因此,拋光組合物可包含在任兩個針對聚乙烯醇所列舉之上述端點值之範圍內之量之聚乙烯醇。例如,拋光組合物可包含0.1wt.%至2wt.%、或0.2wt.%至1.8wt.%、或0.3wt.%至1.6wt.%、或0.4wt.%至1.4wt.%、或0.5wt.%至1.2wt.%之聚乙烯醇。
通常,拋光組合物之pH為1或更大,例如,2或更大或3或更大。另一選擇為或此外,拋光組合物之pH為4或更小,例如,3或更小或2或更小。因此,拋光組合物具有在任兩個針對拋光組合物之pH所列舉之上述端點值之範圍內之pH。例如,拋光組合物之pH可為1至4、1至3、2至4、3至4或1至2。
在某些實施例中,拋光組合物不包含雜環化合物。更具體而言,拋光組合物實質上包含小於100ppb(十億份數)、例如小於75ppb、或小於50ppb、小於25ppb、小於5ppb、或小於1ppb之任何雜環化合物。在一些實施例中,拋光組合物含有檢測不到的量之雜環化合物。具體而言,本發明拋光組合物不包括與銅基板表面上之銅錯合而在銅基板表面上形成不溶性錯合物之雜環化合物。本發明拋光組合物所不包括之特定雜環化合物之非限制性實例包括5-胺基四唑、咪唑、苯并三唑、苯并咪唑、三唑、甲苯基三唑、喹哪啶酸(quinaldinic acid)、喹啉酸、胺基化合物、亞胺基化合物、羧基化合物、巰基化合物、硝基化合物、脲化合物及硫脲化合物及其衍生物。期望地,拋光組合物不含有任何雜環化合物。
拋光組合物可藉由任一適宜技術來製備,其中許多已為彼等熟習此項技術者所習知。可以分批或連續製程來製備拋光組合物。一般而言,拋光組合物可藉由以任一次序合併其組份來製備。如本文所使
用,術語「組份」包括個別成份(例如,濕法二氧化矽、使鎳-磷氧化之氧化劑、螯合劑、聚乙烯醇等)以及成份(例如,濕法二氧化矽、使鎳-磷氧化之氧化劑、螯合劑、聚乙烯醇等)之任一組合。
例如,可將濕法二氧化矽分散於水中。然後,可添加螯合劑及聚乙烯醇,並藉由能夠將組份納入拋光組合物中之任一方法混合。可在製備拋光組合物期間之任一時間添加使鎳-磷氧化之氧化劑。拋光組合物可在使用前製備,且一或多種組份(例如使鎳-磷氧化之氧化劑)係於即將使用前(例如,使用前1分鐘內或使用前1小時內或使用前7天內)添加至拋光組合物中。亦可藉由在拋光操作期間在基板之表面處混合各組份來製備拋光組合物。
拋光組合物可作為包含濕法二氧化矽、使鎳-磷氧化之氧化劑、螯合劑、聚乙烯醇及水之單包裝系統來供應。另一選擇為,可將濕法二氧化矽以於水中之分散液形式供應於第一容器中,且可將螯合劑及聚乙烯醇以乾燥形式或以於水中之溶液或分散液形式供應於第二容器中。期望將使鎳-磷氧化之氧化劑與拋光組合物之其他組份分開供應,且由(例如)終端使用者於使用前不久(例如,使用前1週或更短、使用前1天或更短、使用前1小時或更短、使用前10分鐘或更短,或使用前1分鐘或更短)將該氧化劑與拋光組合物之其他組份合併。第一或第二容器中之組份可呈乾燥形式,而另一容器中之組份可呈水性分散液形式。此外,第一及第二容器中之組份適宜具有不同的pH值,或另一選擇為具有實質上類似或甚至相等之pH值。拋光組合物各組份之其他兩個容器或三個容器或更多個容器之組合為熟習此項技術者已知。
本發明拋光組合物亦可以濃縮物形式提供,該濃縮物意欲在使用之前用適量水稀釋。在該實施例中,拋光組合物濃縮物可包含濕法二氧化矽、螯合劑、聚乙烯醇及水,具有或不具有使鎳-磷氧化之氧
化劑,該等組份之量應使得,在濃縮物經適量水稀釋後且使鎳-磷氧化之氧化劑若尚未以適量存在,則拋光組合物之各組份將以在上文針對各組份所列舉之適當範圍內之量存於拋光組合物中。例如,濕法二氧化矽、螯合劑及聚乙烯醇可各自係以上文針對各組份所列舉濃度之2倍(例如,3倍、4倍或5倍)的量之濃度存在,從而使得,當濃縮物經等體積(例如,分別為2倍等體積之水、3倍等體積之水或4倍等體積之水)稀釋且具有適量之使鎳-磷氧化之氧化劑時,各組份將以在上文針對各組份所述範圍內之量存於拋光組合物中。此外,如彼等熟習此項技術者所應瞭解,濃縮物可在最終拋光組合物中含有適當比例之水,以確保其他組份至少部分或完全溶解於濃縮物中。
本發明亦提供用本文所闡述之拋光組合物化學-機械拋光基板之方法。具體而言,本發明方法包含(i)使基板與拋光墊及本文所闡述之化學-機械拋光組合物接觸,(ii)相對於基板移動拋光墊,且化學-機械拋光組合物位於其間,及(iii)研磨基板之至少一部分以拋光該基板。
欲使用本發明方法拋光之基板可為任何適宜的基板,尤其含有鎳-磷之基板。較佳基板包含至少一個包含鎳-磷、基本上由鎳-磷組成或由鎳-磷組成之層,尤其用於拋光之經暴露層。尤其適宜之基板包括(但不限於)記憶體或硬碟,例如經鎳-磷塗覆之鋁碟。
本發明拋光方法尤其適於結合化學-機械拋光(CMP)裝置使用。通常,該裝置包含平臺,該平臺在使用時運動且具有因軌道、直線或圓周運動產生之速度;拋光墊,其與該平臺接觸且隨平臺運動而移動;及支座,其藉由接觸欲拋光之基板並相對於拋光墊表面移動來固持該基板。基板拋光係藉由以下方式來實施:將基板與拋光墊及本發明拋光組合物接觸放置然後使拋光墊相對於基板移動,以研磨基板之至少一部分,從而拋光該基板。
可用化學-機械拋光組合物以及任何適宜拋光墊(例如,拋光表
面)來平坦化或拋光基板。適宜之拋光墊包括(例如)織造及非織造拋光墊。此外,適宜拋光墊可包含具有可變之密度、硬度、厚度、可壓縮性、壓縮後反彈之能力及壓縮模量之任一適宜聚合物。適宜聚合物包括(例如)聚氯乙烯、聚氟乙烯、耐綸(nylon)、氟碳化物、聚碳酸酯、聚酯、聚丙烯酸酯、聚醚、聚乙烯、聚醯胺、聚胺基甲酸酯、聚苯乙烯、聚丙烯、其共形成產物及其混合物。
期望地,CMP裝置進一步包含原位拋光終點檢測系統,許多原位拋光終點檢測系統已為業內所知。業內已知藉由分析自工件表面反射之光或其他輻射來檢查及監測拋光製程之技術。該等方法闡述於(例如)美國專利5,196,353、美國專利5,433,651、美國專利5,609,511、美國專利5,643,046、美國專利5,658,183、美國專利5,730,642、美國專利5,838,447、美國專利5,872,633、美國專利5,893,796、美國專利5,949,927及美國專利5,964,643中。期望地,檢查或監測所拋光工件之拋光製程的進展使得能夠確定拋光終點,即確定何時結束具體工件之拋光製程。
化學-機械拋光製程可具有多方面特徵,例如基板之移除速率、所得表面粗糙度及基板之所得塌邊(edge roll-off)。
可使用任一適宜技術來測定基板之移除速率。用於測定基板之移除速率之適宜技術之實例包括,在使用本發明拋光方法之前及之後對基板稱重,以測定每單位拋光時間所移除基板之量,該量可能與以每單位拋光時間所移除基板之厚度表示之移除速率相關;及在使用本發明拋光方法之前及之後測定基板之厚度,以直接量測每單位拋光時間之基板移除速率。
缺陷之一個量度係總刮痕計數,如拋光後基板表面上之淺刮痕、微刮痕及深刮痕之總和所定義。缺陷之另一量度係黏附至表面或包埋於已經拋光之基板之表面中之微顆粒之計數。可使用光學缺陷掃
描設備(例如購自KLA Tencor(Milpitas,CA)之Candela 6100及6300系列以及類似儀器)來檢查諸如鎳-磷塗覆之碟記憶碟等基板。
期望地,本文所揭示之本發明拋光組合物及方法在用以拋光包含鎳-磷塗覆之碟記憶碟之基板時可減少總刮痕計數及/或微顆粒之計數。
以下實例進一步闡釋本發明,但當然不應理解為以任何方式限制本發明範圍。
此實例展示可藉由本發明拋光組合物在拋光鎳-磷塗覆之鋁碟記憶碟時達成之對缺陷之效應。
用4種不同的拋光組合物在一側上單獨拋光包含鎳-磷塗覆之鋁碟記憶碟之類似基板。每一拋光組合物包含5wt.%之平均粒徑30nm之濕法二氧化矽、1wt.%甘胺酸及0.6wt.%於水中之過氧化氫(pH為1.9)。拋光組合物A(對照)不含有任何聚乙烯醇。拋光組合物B、C及D另外分別包含250ppm、500ppm及1000ppm之聚乙烯醇,其中聚乙烯醇之分子量在13,000-23,000g/mol範圍內且水解程度為98%。
在拋光後,檢查基板之總刮痕計數、淺刮痕計數、深刮痕計數、微刮痕計數及微顆粒計數,其中微顆粒計數係指黏附至基板表面或包埋於該基板表面中之顆粒。結果示於表中。
*兩個實驗之平均值
如自示於該表中之結果可明瞭,與對照拋光組合物A相比,本發明拋光組合物B-D展現總刮痕計數大約降低79-88%,淺刮痕計數大約降低83-87%,深刮痕計數大約降低80%,且微刮痕計數大約降低73-91%。與對照拋光組合物A相比,本發明拋光組合物C及D(其分別含有500ppm及1000ppm之聚乙烯醇)展現微顆粒計數大約降低38%及48%。
Claims (25)
- 一種化學-機械拋光基板之方法,該方法包含:(i)提供包含至少一個鎳-磷層之基板,(ii)提供拋光墊,(iii)提供包含以下組份之拋光組合物:(a)濕法二氧化矽,(b)使鎳-磷氧化之氧化劑,(c)螯合劑,(d)聚乙烯醇,(e)水,其中該拋光組合物之pH為1至4,(iv)使該基板之表面與該拋光墊及該拋光組合物接觸,及(v)研磨該基板之該表面之至少一部分,以自該基板之該表面移除至少一部分鎳-磷且拋光該基板之該表面,其中該聚乙烯醇具有90%或更高之水解程度。
- 如請求項1之方法,其中該濕法二氧化矽包含兩種或更多種不同類型之二氧化矽顆粒。
- 如請求項1之方法,其中該濕法二氧化矽具有10nm至80nm之平均粒徑。
- 如請求項3之方法,其中該濕法二氧化矽具有10nm至30nm之平均粒徑。
- 如請求項1之方法,其中該拋光組合物包含1wt.%至10wt.%之濕法二氧化矽。
- 如請求項1之方法,其中該氧化劑係過氧化氫。
- 如請求項1之方法,其中該螯合劑係甘胺酸或丙胺酸。
- 如請求項1之方法,其中該拋光組合物包含0.1wt.%至2wt.%之該螯合劑。
- 如請求項1之方法,其中該聚乙烯醇具有8,000g/mol至50,000g/mol之分子量。
- 如請求項9之方法,其中該聚乙烯醇具有13,000g/mol至23,000g/mol之分子量。
- 如請求項1之方法,其中該拋光組合物包含0.1wt.%至2wt.%之聚乙烯醇。
- 如請求項1之方法,其中該拋光組合物之pH為1至3。
- 如請求項1之方法,其中該基板係鎳-磷塗覆之鋁碟。
- 一種化學-機械拋光組合物,其包含:(a)濕法二氧化矽,(b)使鎳-磷氧化之氧化劑,(c)螯合劑,(d)聚乙烯醇,其中該聚乙烯醇具有8,000g/mol至50,000g/mol之分子量,(e)水,其中該拋光組合物之pH為1至4,其中該拋光組合物不包含雜環化合物,且其中該聚乙烯醇具有90%或更高之水解程度。
- 如請求項14之組合物,其中該濕法二氧化矽包含兩種或更多種不同類型之二氧化矽顆粒。
- 如請求項14之組合物,其中該濕法二氧化矽具有10nm至80nm之平均粒徑。
- 如請求項16之組合物,其中該濕法二氧化矽具有10nm至30nm之平均粒徑。
- 如請求項14之組合物,其中該拋光組合物包含1wt.%至10wt.% 之濕法二氧化矽。
- 如請求項14之組合物,其中該氧化劑係過氧化氫。
- 如請求項14之組合物,其中該螯合劑係甘胺酸或丙胺酸。
- 如請求項14之組合物,其中該拋光組合物包含0.1wt.%至2wt.%之該螯合劑。
- 如請求項14之組合物,其中該聚乙烯醇具有13,000g/mol至23,000g/mol之分子量。
- 如請求項14之組合物,其中該拋光組合物包含0.1wt.%至2wt.%之聚乙烯醇。
- 如請求項14之組合物,其中該拋光組合物之pH為1至3。
- 一種化學-機械拋光基板之方法,該方法包含:(i)提供基板,(ii)提供拋光墊,(iii)提供如請求項14之拋光組合物,(iv)使該基板之表面與該拋光墊及該拋光組合物接觸,及(v)研磨該基板之該表面之至少一部分,以移除該基板之該表面之至少某部分從而拋光該基板之該表面。
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US13/478,292 US9039914B2 (en) | 2012-05-23 | 2012-05-23 | Polishing composition for nickel-phosphorous-coated memory disks |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10358579B2 (en) * | 2013-12-03 | 2019-07-23 | Cabot Microelectronics Corporation | CMP compositions and methods for polishing nickel phosphorous surfaces |
US9909032B2 (en) * | 2014-01-15 | 2018-03-06 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks |
US9401104B2 (en) | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
TWI563073B (en) * | 2014-06-03 | 2016-12-21 | Cabot Microelectronics Corp | Cmp compositions and methods for polishing rigid disk surfaces |
MY186924A (en) * | 2015-04-06 | 2021-08-26 | Cmc Mat Inc | Cmp composition and methods for polishing rigid disks |
WO2017051770A1 (ja) * | 2015-09-25 | 2017-03-30 | 山口精研工業株式会社 | 研磨剤組成物、および磁気ディスク基板の研磨方法 |
WO2017214185A1 (en) * | 2016-06-07 | 2017-12-14 | Cabot Microelectronics Corporation | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface |
MY199592A (en) * | 2017-04-14 | 2023-11-08 | Cmc Mat Llc | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface |
US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
US20060096496A1 (en) * | 2004-10-28 | 2006-05-11 | Cabot Microelectronic Corporation | CMP composition comprising surfactant |
Family Cites Families (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0284485A (ja) | 1988-09-20 | 1990-03-26 | Showa Denko Kk | アルミニウム磁気ディスク研磨用組成物 |
US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
US5693239A (en) | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
JPH09316430A (ja) | 1996-03-29 | 1997-12-09 | Showa Denko Kk | 磁気ディスク基板研磨用組成物 |
US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5993686A (en) | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
DE69734868T2 (de) | 1996-07-25 | 2006-08-03 | Dupont Air Products Nanomaterials L.L.C., Tempe | Zusammensetzung und verfahren zum chemisch-mechanischen polieren |
US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
US6033596A (en) | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US5783489A (en) | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6039891A (en) | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US5958288A (en) | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6149696A (en) | 1997-11-06 | 2000-11-21 | Komag, Inc. | Colloidal silica slurry for NiP plated disk polishing |
US6432828B2 (en) | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP4163785B2 (ja) | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
US6177026B1 (en) | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
JP4090589B2 (ja) | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
DE69942615D1 (de) | 1998-10-23 | 2010-09-02 | Fujifilm Electronic Materials | Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend |
US6569216B1 (en) | 1998-11-27 | 2003-05-27 | Kao Corporation | Abrasive fluid compositions |
JP4053165B2 (ja) | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
JP2000160139A (ja) | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6395194B1 (en) | 1998-12-18 | 2002-05-28 | Intersurface Dynamics Inc. | Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same |
KR100447551B1 (ko) | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
US6630433B2 (en) | 1999-07-19 | 2003-10-07 | Honeywell International Inc. | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
US6855266B1 (en) | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
US6471735B1 (en) | 1999-08-17 | 2002-10-29 | Air Liquide America Corporation | Compositions for use in a chemical-mechanical planarization process |
JP3697963B2 (ja) | 1999-08-30 | 2005-09-21 | 富士電機デバイステクノロジー株式会社 | 研磨布および平面研磨加工方法 |
US6376381B1 (en) | 1999-08-31 | 2002-04-23 | Micron Technology, Inc. | Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6429133B1 (en) | 1999-08-31 | 2002-08-06 | Micron Technology, Inc. | Composition compatible with aluminum planarization and methods therefore |
US6280490B1 (en) | 1999-09-27 | 2001-08-28 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
US6488729B1 (en) | 1999-09-30 | 2002-12-03 | Showa Denko K.K. | Polishing composition and method |
US6435944B1 (en) | 1999-10-27 | 2002-08-20 | Applied Materials, Inc. | CMP slurry for planarizing metals |
US6350393B2 (en) | 1999-11-04 | 2002-02-26 | Cabot Microelectronics Corporation | Use of CsOH in a dielectric CMP slurry |
US6332831B1 (en) | 2000-04-06 | 2001-12-25 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
US6471884B1 (en) | 2000-04-04 | 2002-10-29 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with an amino acid-containing composition |
US6569215B2 (en) | 2000-04-17 | 2003-05-27 | Showa Denko Kabushiki Kaisha | Composition for polishing magnetic disk substrate |
TWI268286B (en) | 2000-04-28 | 2006-12-11 | Kao Corp | Roll-off reducing agent |
MY118582A (en) | 2000-05-12 | 2004-12-31 | Kao Corp | Polishing composition |
US6976905B1 (en) | 2000-06-16 | 2005-12-20 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system |
US6468913B1 (en) | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
WO2002006418A1 (fr) | 2000-07-19 | 2002-01-24 | Kao Corporation | Composition de fluide de polissage |
JP2002075927A (ja) | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6468137B1 (en) | 2000-09-07 | 2002-10-22 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system |
US6541384B1 (en) | 2000-09-08 | 2003-04-01 | Applied Materials, Inc. | Method of initiating cooper CMP process |
US6461227B1 (en) | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
JP4009986B2 (ja) | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法 |
US6579923B2 (en) | 2001-02-05 | 2003-06-17 | 3M Innovative Properties Company | Use of a silicone surfactant in polishing compositions |
JP4231632B2 (ja) | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
US20030104770A1 (en) | 2001-04-30 | 2003-06-05 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
US20040159050A1 (en) | 2001-04-30 | 2004-08-19 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
MY144587A (en) | 2001-06-21 | 2011-10-14 | Kao Corp | Polishing composition |
SG144688A1 (en) | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
MY133305A (en) | 2001-08-21 | 2007-11-30 | Kao Corp | Polishing composition |
US6677239B2 (en) | 2001-08-24 | 2004-01-13 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing |
US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US7097541B2 (en) | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US6755721B2 (en) | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
US6821309B2 (en) | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
US6641630B1 (en) | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
EP1517972A4 (en) | 2002-06-07 | 2009-12-16 | Showa Denko Kk | METAL POLISHING COMPOSITION, POLISHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER USING THE POLISHING METHOD |
US6936543B2 (en) | 2002-06-07 | 2005-08-30 | Cabot Microelectronics Corporation | CMP method utilizing amphiphilic nonionic surfactants |
US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
MY134679A (en) | 2002-12-26 | 2007-12-31 | Kao Corp | Polishing composition |
JP3997153B2 (ja) | 2002-12-26 | 2007-10-24 | 花王株式会社 | 研磨液組成物 |
US7071105B2 (en) | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
TWI254741B (en) | 2003-02-05 | 2006-05-11 | Kao Corp | Polishing composition |
US6896591B2 (en) | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
JP2004247605A (ja) | 2003-02-14 | 2004-09-02 | Toshiba Corp | Cmp用スラリーおよび半導体装置の製造方法 |
JP4202183B2 (ja) | 2003-05-09 | 2008-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US20040232379A1 (en) | 2003-05-20 | 2004-11-25 | Ameen Joseph G. | Multi-oxidizer-based slurry for nickel hard disk planarization |
GB2402941B (en) | 2003-06-09 | 2007-06-27 | Kao Corp | Method for manufacturing substrate |
JP4339034B2 (ja) | 2003-07-01 | 2009-10-07 | 花王株式会社 | 研磨液組成物 |
JP4707311B2 (ja) | 2003-08-08 | 2011-06-22 | 花王株式会社 | 磁気ディスク用基板 |
JP4206313B2 (ja) | 2003-08-08 | 2009-01-07 | 花王株式会社 | 磁気ディスク用研磨液組成物 |
TW200526768A (en) * | 2003-09-30 | 2005-08-16 | Fujimi Inc | Polishing composition and polishing method |
US20050079803A1 (en) | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
US7153335B2 (en) | 2003-10-10 | 2006-12-26 | Dupont Air Products Nanomaterials Llc | Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole |
US7514363B2 (en) | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
US20050090104A1 (en) | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
US7419911B2 (en) | 2003-11-10 | 2008-09-02 | Ekc Technology, Inc. | Compositions and methods for rapidly removing overfilled substrates |
US20050260390A1 (en) | 2004-01-19 | 2005-11-24 | Croft Steven A | Coated substrate |
JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
TW200613485A (en) * | 2004-03-22 | 2006-05-01 | Kao Corp | Polishing composition |
JP4644434B2 (ja) | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2005286048A (ja) | 2004-03-29 | 2005-10-13 | Nitta Haas Inc | 半導体研磨用組成物 |
US7161247B2 (en) | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
KR100672940B1 (ko) | 2004-08-03 | 2007-01-24 | 삼성전자주식회사 | 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법 |
JP5026665B2 (ja) | 2004-10-15 | 2012-09-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
KR100662546B1 (ko) | 2005-03-07 | 2006-12-28 | 제일모직주식회사 | 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 |
US20060213868A1 (en) | 2005-03-23 | 2006-09-28 | Siddiqui Junaid A | Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole |
US20070209288A1 (en) | 2005-03-28 | 2007-09-13 | Yoshiharu Ohta | Semiconductor Polishing Composition |
JP4776269B2 (ja) | 2005-04-28 | 2011-09-21 | 株式会社東芝 | 金属膜cmp用スラリー、および半導体装置の製造方法 |
JPWO2006126432A1 (ja) | 2005-05-27 | 2008-12-25 | 日産化学工業株式会社 | シリコンウェハー用研磨組成物 |
JP2007157841A (ja) | 2005-12-01 | 2007-06-21 | Toshiba Corp | Cmp用水系分散液、研磨方法、および半導体装置の製造方法 |
US7897061B2 (en) | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
DE102006008689B4 (de) | 2006-02-24 | 2012-01-26 | Lanxess Deutschland Gmbh | Poliermittel und dessen Verwendung |
US8551202B2 (en) | 2006-03-23 | 2013-10-08 | Cabot Microelectronics Corporation | Iodate-containing chemical-mechanical polishing compositions and methods |
JP5329786B2 (ja) | 2007-08-31 | 2013-10-30 | 株式会社東芝 | 研磨液および半導体装置の製造方法 |
US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
US8247326B2 (en) | 2008-07-10 | 2012-08-21 | Cabot Microelectronics Corporation | Method of polishing nickel-phosphorous |
US8226841B2 (en) | 2009-02-03 | 2012-07-24 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
US9330703B2 (en) * | 2009-06-04 | 2016-05-03 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
-
2012
- 2012-05-23 US US13/478,292 patent/US9039914B2/en active Active
-
2013
- 2013-05-13 TW TW102116908A patent/TWI484009B/zh active
- 2013-05-22 SG SG11201407646XA patent/SG11201407646XA/en unknown
- 2013-05-22 MY MYPI2014003269A patent/MY171797A/en unknown
- 2013-05-22 WO PCT/US2013/042168 patent/WO2013177251A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
US20060096496A1 (en) * | 2004-10-28 | 2006-05-11 | Cabot Microelectronic Corporation | CMP composition comprising surfactant |
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US20130313226A1 (en) | 2013-11-28 |
SG11201407646XA (en) | 2014-12-30 |
US9039914B2 (en) | 2015-05-26 |
TW201402735A (zh) | 2014-01-16 |
WO2013177251A1 (en) | 2013-11-28 |
MY171797A (en) | 2019-10-30 |
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