JP5503065B2 - ニッケル−リン被覆メモリーディスクのためのハイブリッド研磨材を含む研磨組成物 - Google Patents
ニッケル−リン被覆メモリーディスクのためのハイブリッド研磨材を含む研磨組成物 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims description 218
- 239000000203 mixture Substances 0.000 title claims description 182
- 239000002245 particle Substances 0.000 claims description 220
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 166
- 239000000758 substrate Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 51
- 239000007800 oxidant agent Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 239000002738 chelating agent Substances 0.000 claims description 19
- 239000002736 nonionic surfactant Substances 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 26
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- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 12
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- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 description 1
- GUUULVAMQJLDSY-UHFFFAOYSA-N 4,5-dihydro-1,2-thiazole Chemical compound C1CC=NS1 GUUULVAMQJLDSY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
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- 241000332382 Ceiba Species 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical group CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
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- 238000010923 batch production Methods 0.000 description 1
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- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- HFNQLYDPNAZRCH-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O.OC(O)=O HFNQLYDPNAZRCH-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000009881 electrostatic interaction Effects 0.000 description 1
- BLCTWBJQROOONQ-UHFFFAOYSA-N ethenyl prop-2-enoate Chemical class C=COC(=O)C=C BLCTWBJQROOONQ-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
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- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
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- 229960004995 magnesium peroxide Drugs 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
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- 229920000193 polymethacrylate Polymers 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HXHCOXPZCUFAJI-UHFFFAOYSA-N prop-2-enoic acid;styrene Chemical class OC(=O)C=C.C=CC1=CC=CC=C1 HXHCOXPZCUFAJI-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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- 229940045872 sodium percarbonate Drugs 0.000 description 1
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- 230000002463 transducing effect Effects 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical group [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
研磨組成物を、0.7質量%の、2〜2.7:1の平均アスペクト比を有する第2のアルファアルミナ粒子、0.18質量%のヒュームドアルミナ粒子、2.63質量%の、80m2/gの平均表面積を有するコロイド状シリカ粒子、0.8質量%の過酸化水素、および0.0108質量%のオルガノシロキサン、そして残りは水で調製した。第2のアルファアルミナ粒子は、350nmの平均粒子径を有していた。この研磨組成物は、異なる研磨条件下で、ニッケル−リン(Ni−P)基材を研磨するのに用いた。研摩パラメータとしては、表1中に示したように、12秒間の下降(ramp down)時間および下方に向けた力、および水洗浄時間が挙げられる。
研磨組成物2A〜2Hは、表2中に示した量の、1〜1.1:1の平均アスペクト比を有する第1のアルミナ粒子、2〜2.7:1の平均アスペクト比を有する第2のアルファアルミナ粒子、および湿式法シリカ粒子で調製した。更に、研磨組成物2A〜2Hは、0.18質量%の、130nmの平均粒子径を有するヒュームドアルミナ粒子、0.8質量%の酒石酸、0.6質量%の過酸化水素、および0.0108質量%オルガノシロキサンを含んでいる。
研磨組成物3A〜3Hは、表3A中に示した量の、1〜1.1:1の平均アスペクト比を有する第1のアルファアルミナ粒子、2〜2.7:1の平均アスペクト比を有する第2のアルファアルミナ粒子、および湿式法シリカで調製した。更に、研磨組成物3A〜3Hは、0.18質量%の、130nmの平均粒子径を有するヒュームドアルミナ粒子、1質量%の酒石酸、0.6質量%の過酸化水素、および0.0108質量%のオルガノシロキサンを含んでいる。
研磨組成物4A〜4Hは、0.1質量%の、1〜1.1の平均アスペクト比および200nmの平均粒子径を有する第1のアルファアルミナ粒子、0.86質量%の、2〜2.7の平均アスペクト比および500nmの平均粒子径を有する第2のアルファアルミナ粒子、1.65質量%の、表4に示した表面積を有する湿式法シリカ、0.24質量%のヒュームドアルミナ粒子、0.108質量%のオルガノシロキサン(Silwet L7200)、1質量%のキレート化剤、および2.1質量%の、表4に示した酸化剤で調製した。
研磨組成物5A〜5Bを、1.1〜1:1の平均アスペクト比および200nmの平均粒子径を有する第1のアルファアルミナ粒子、2〜2.7:1の平均アスペクト比および500nmの平均粒子径を有する第2のアルファアルミナ粒子、ヒュームドアルミナ、湿式法シリカ粒子、キレート化剤、および表5中に示した種類および量の酸化剤で調製した。
Claims (22)
- (a)以下の(i)〜(iv)を含む研磨材、
(i)第1のアルファアルミナ粒子、該第1のアルファアルミナ粒子は、0.8:1〜1.2:1の平均アスペクト比を有する、
(ii)第2のアルファアルミナ粒子、該第2のアルファアルミナ粒子は、1.2:1より大きな平均アスペクト比を有する、
(iii)ヒュームドアルミナ粒子、
(iv)湿式法シリカ粒子、ならびに
(b)水、
を含んでなる研磨組成物。 - 前記第2のアルファアルミナ粒子が、1.3:1〜5:1の平均アスペクト比を有する、請求項1記載の組成物。
- 前記第1のアルファアルミナ粒子の前記第2のアルファアルミナ粒子に対する質量比が、0.1:1〜1:1である、請求項1記載の組成物。
- 前記研磨材が、前記研磨組成物中の該研磨材の総質量を基準として、(i)1〜10質量%の第1のアルファアルミナ粒子、(ii)20〜60質量%の第2のアルファアルミナ粒子、(iii)5〜20質量%のヒュームドアルミナ粒子、および(iv)20〜60質量%の湿式法シリカ粒子、を含む、請求項1記載の組成物。
- 前記組成物が、1質量%〜10質量%の前記研磨材を含む、請求項1記載の組成物。
- 前記組成物が、更に酸化剤を含む、請求項1記載の組成物。
- 前記組成物が、更に、ニッケルに対するキレート化剤を含む、請求項1記載の組成物。
- 前記組成物が、更にノニオン性界面活性剤を含む、請求項1記載の組成物。
- 前記第1のアルファアルミナ粒子が、200nm〜600nmの平均粒子径を有し、かつ前記第2のアルファアルミナ粒子が、100nm〜600nmの平均粒子径を有する、請求項1記載の組成物。
- 前記組成物が、1〜4のpHを有する、請求項1記載の組成物。
- 基材の研磨方法であって、該方法が、
(i)基材を準備すること、
(ii)研磨パッドを準備すること、
(iii)以下の(a)および(b)を含む研磨組成物を準備すること、
(a)以下の(A)〜(D)を含む研磨材、
(A)第1のアルファアルミナ粒子、該第1のアルファアルミナ粒子は、0.81:1〜1.2:1の平均アスペクト比を有する、
(B)第2のアルファアルミナ粒子、該第2のアルファアルミナ粒子は、1:2より大きな平均アスペクト比を有する、
(C)ヒュームドアルミナ粒子、
(D)湿式法シリカ粒子、および
(b)水、
(iv)該基材の表面を、該研磨パッドおよび該研磨組成物と接触させること、ならびに
(v)該基材の該表面の少なくとも一部を磨耗させて、該基材の少なくとも一部を除去して、該基材の該表面を研磨すること、
を含んでなる、方法。 - 前記第2のアルファアルミナ粒子が、1.3:1〜5:1の平均アスペクト比を有する、請求項11記載の方法。
- 前記第1のアルファアルミナ粒子の前記第2のアルファアルミナ粒子に対する質量比が、0.1:1〜1:1である、請求項11記載の方法。
- 前記研磨材が、前記研磨組成物中の該研磨材の総質量を基準として、(i)1〜10質量%の第1のアルファアルミナ粒子、(ii)20〜60質量%の第2のアルファアルミナ粒子、(iii)5〜20質量%のヒュームドアルミナ粒子、および(iv)20〜60質量%の湿式法シリカ粒子、を含む、請求項11記載の方法。
- 前記組成物が、1質量%〜10質量%の前記研磨材を含む、請求項11記載の方法。
- 前記組成物が、更に酸化剤を含む、請求項11記載の方法。
- 前記組成物が、更に、ニッケルに対するキレート化剤を含む、請求項11記載の方法。
- 前記組成物が、更にノニオン性界面活性剤を含む、請求項11記載の方法。
- 前記第1のアルファアルミナ粒子が、200nm〜600nmの平均粒子径を有し、かつ前記第2のアルファアルミナ粒子が、100nm〜600nmの平均粒子径を有する、請求項11記載の方法。
- 前記組成物が、1〜4のpHを有する、請求項11記載の方法。
- 前記基材が少なくとも1層のニッケル−リンを含み、かつニッケル−リンの少なくとも一部を該基材の前記表面から除去して、該基材の該表面を研磨する、請求項11記載の方法。
- 前記基材が、ニッケル−リンをコーティングされたアルミニウムメモリーディスクである、請求項21記載の方法。
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US13/594,947 US8518135B1 (en) | 2012-08-27 | 2012-08-27 | Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks |
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MY177717A (en) * | 2013-10-18 | 2020-09-23 | Cmc Mat Inc | Polishing composition and method for nickel-phosphorous coated memory disks |
US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
US9401104B2 (en) * | 2014-05-05 | 2016-07-26 | Cabot Microelectronics Corporation | Polishing composition for edge roll-off improvement |
JP6800411B2 (ja) | 2015-01-13 | 2020-12-16 | シーエムシー マテリアルズ,インコーポレイティド | 洗浄用組成物及びcmp後の半導体ウエハーの洗浄方法 |
MY184933A (en) * | 2015-09-25 | 2021-04-30 | Yamaguchi Seiken Kogyo Co Ltd | Polishing composition and method for polishing magnetic disk substrate |
JP6584935B2 (ja) * | 2015-11-30 | 2019-10-02 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
JP6679386B2 (ja) * | 2016-03-31 | 2020-04-15 | 株式会社フジミインコーポレーテッド | 研磨用組成物、基板の製造方法および研磨方法 |
US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
JP7457586B2 (ja) * | 2020-06-18 | 2024-03-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物の濃縮液およびこれを用いた研磨方法 |
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US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5693239A (en) | 1995-10-10 | 1997-12-02 | Rodel, Inc. | Polishing slurries comprising two abrasive components and methods for their use |
US6294105B1 (en) * | 1997-12-23 | 2001-09-25 | International Business Machines Corporation | Chemical mechanical polishing slurry and method for polishing metal/oxide layers |
JP3998813B2 (ja) * | 1998-06-15 | 2007-10-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US6896591B2 (en) | 2003-02-11 | 2005-05-24 | Cabot Microelectronics Corporation | Mixed-abrasive polishing composition and method for using the same |
KR100787191B1 (ko) * | 2006-08-28 | 2007-12-21 | 한국화학연구원 | 각형비가 큰 판상 알파알루미나 결정체 및 이의 제조방법 |
US20110258938A1 (en) * | 2008-06-13 | 2011-10-27 | Fujimi Inc. | Aluminum oxide particle and polishing composition containing the same |
US8226841B2 (en) * | 2009-02-03 | 2012-07-24 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
US9330703B2 (en) * | 2009-06-04 | 2016-05-03 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous memory disks |
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MY161744A (en) | 2017-05-15 |
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