JP5508413B2 - ニッケル−リンの研磨方法 - Google Patents
ニッケル−リンの研磨方法 Download PDFInfo
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- JP5508413B2 JP5508413B2 JP2011517411A JP2011517411A JP5508413B2 JP 5508413 B2 JP5508413 B2 JP 5508413B2 JP 2011517411 A JP2011517411 A JP 2011517411A JP 2011517411 A JP2011517411 A JP 2011517411A JP 5508413 B2 JP5508413 B2 JP 5508413B2
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- JP
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- Prior art keywords
- nickel
- polishing
- polishing composition
- substrate
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000005498 polishing Methods 0.000 title claims description 119
- 238000000034 method Methods 0.000 title claims description 79
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 title claims description 44
- 239000000203 mixture Substances 0.000 claims description 117
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 112
- 239000000758 substrate Substances 0.000 claims description 56
- 239000002245 particle Substances 0.000 claims description 47
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 42
- 239000000377 silicon dioxide Substances 0.000 claims description 41
- 239000002253 acid Substances 0.000 claims description 34
- 230000015654 memory Effects 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 20
- CIEZZGWIJBXOTE-UHFFFAOYSA-N 2-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)C(C)N(CC(O)=O)CC(O)=O CIEZZGWIJBXOTE-UHFFFAOYSA-N 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 150000003839 salts Chemical class 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 108010077895 Sarcosine Proteins 0.000 claims 1
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 claims 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 26
- 230000003746 surface roughness Effects 0.000 description 23
- 239000008119 colloidal silica Substances 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 239000004471 Glycine Substances 0.000 description 13
- 239000003139 biocide Substances 0.000 description 11
- 230000003115 biocidal effect Effects 0.000 description 10
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 9
- PDIZYYQQWUOPPK-UHFFFAOYSA-N acetic acid;2-(methylamino)acetic acid Chemical compound CC(O)=O.CC(O)=O.CNCC(O)=O PDIZYYQQWUOPPK-UHFFFAOYSA-N 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 125000000524 functional group Chemical group 0.000 description 7
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 6
- 239000008139 complexing agent Substances 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 5
- -1 silicate anion Chemical class 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- UWRBFYBQPCJRRL-UHFFFAOYSA-N 3-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CC(O)=O)CC(O)=O UWRBFYBQPCJRRL-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 239000006179 pH buffering agent Substances 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000001302 tertiary amino group Chemical group 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- UUUVARPZDHHMLF-UHFFFAOYSA-N O.O.CNCC(=O)O Chemical compound O.O.CNCC(=O)O UUUVARPZDHHMLF-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
本例は、本発明の研磨方法により達成され得るニッケル−リンについて観測される除去速度に対する錯化剤の効果を示す。
本例は本発明の研磨方法の使用により生じるニッケル−リンに関して観測される表面粗さに対する錯化剤の効果を示す。
本例は本発明の研磨方法によって達成されうる、ニッケル−リンに関して観測される除去速度に対する錯化剤の効果を示す。
本例は本発明の研磨方法の使用により得られる、ニッケル−リンに関して観測される表面粗さに対する錯化剤の効果を示す。
本発明はまた、以下の内容を包含する。
(1)
(i)ニッケル−リンを含む基材を用意すること、
(ii)(a)湿式法シリカ、(b)ニッケル−リンを酸化させる薬剤及び(c)アミノポリカルボン酸を含み、pHが1〜5である化学機械研磨組成物と前記基材を接触させること、及び、
(iii)前記基材に対して前記研磨組成物を動かしてニッケル−リンの少なくとも一部分を磨耗し、前記基材を研磨すること、
を含む、基材を化学機械研磨する方法。
(2)
前記研磨組成物が0.1wt%〜5wt%の湿式法シリカを含む、項目1に記載の方法。
(3)
前記研磨組成物が0.5wt%〜3wt%の湿式法シリカを含む、項目2に記載の方法。
(4)
前記湿式法シリカは、平均粒子サイズが20nm〜125nmである、項目1に記載の方法。
(5)
酸化剤が過酸化水素である、項目1に記載の方法。
(6)
前記研磨組成物が0.05〜0.5wt%の過酸化水素を含む、項目5に記載の方法。
(7)
前記アミノポリカルボン酸がβアラニン二酢酸、メチルグリシン二酢酸、ヒドロキシエチルエチレンジアミン三酢酸、ジエチレントリアミン五酢酸、N,N−ビス(カルボキシメチル)アラニン、それらの塩及びそれらの組み合わせからなる群より選ばれる、項目1に記載の方法。
(8)
前記アミノポリカルボン酸がメチルグリシン二酢酸である、項目1記載の方法。
(9)
前記アミノポリカルボン酸がヒドロキシエチルエチレンジアミン三酢酸である、項目1記載の方法。
(10)
前記研磨組成物が0.1wt%〜5wt%のアミノポリカルボン酸を含む、項目1記載の方法。
(11)
前記研磨組成物が0.5wt%〜2wt%のアミノポリカルボン酸を含む、項目10記載の方法。
(12)
前記研磨組成物は、pHが2〜4である、項目1記載の方法。
(13)
前記研磨組成物は、pHが2〜3である、項目1記載の方法。
(14)
前記基材がニッケル−リンで被覆したアルミニウムディスクを含む、項目1記載の方法。
(15)
前記ディスクがメモリーディスクである、項目14記載の方法。
(16)
前記研磨組成物が、
(a)0.1wt%〜5wt%の縮合重合シリカ、
(b)0.05wt%〜0.5wt%の過酸化水素、及び、
(c)0.1wt%〜5wt%のメチルグリシン二酢酸又はヒドロキシエチルエチレンジアミン三酢酸、
を含み、pHが2〜4である、項目1記載の方法。
(17)
前記基材がニッケル−リンで被覆したアルミニウムディスクを含む、項目16記載の方法。
(18)
前記ディスクがメモリーディスクである、項目17記載の方法。
Claims (13)
- (i)ニッケル−リンを含む基材を用意すること、
(ii)(a)湿式法シリカ、(b)ニッケル−リンを酸化させる薬剤及び(c)メチルグリシン二酢酸、その塩、及びそれらの組み合わせからなる群より選ばれるアミノポリカルボン酸を含み、pHが1〜5である化学機械研磨組成物と前記基材を接触させること、及び、
(iii)前記基材に対して前記研磨組成物を動かして前記ニッケル−リンの少なくとも一部分を磨耗し、前記基材を研磨すること、
を含む、基材を化学機械研磨する方法。 - 前記研磨組成物が0.1wt%〜5wt%の湿式法シリカを含む、請求項1に記載の方法。
- 前記湿式法シリカは、平均粒子サイズが20nm〜125nmである、請求項1に記載の方法。
- 酸化剤が過酸化水素である、請求項1に記載の方法。
- 前記研磨組成物が0.05〜0.5wt%の過酸化水素を含む、請求項4に記載の方法。
- 前記アミノポリカルボン酸がメチルグリシン二酢酸である、請求項1記載の方法。
- 前記研磨組成物が0.1wt%〜5wt%のアミノポリカルボン酸を含む、請求項1記載の方法。
- 前記研磨組成物は、pHが2〜4である、請求項1記載の方法。
- 前記基材がニッケル−リンで被覆したアルミニウムディスクを含む、請求項1記載の方法。
- 前記ディスクがメモリーディスクである、請求項9記載の方法。
- 前記研磨組成物が、
(a)0.1wt%〜5wt%の縮合重合シリカ、
(b)0.05wt%〜0.5wt%の過酸化水素、及び、
(c)0.1wt%〜5wt%のメチルグリシン二酢酸、
を含み、pHが2〜4である、請求項1記載の方法。 - 前記基材がニッケル−リンで被覆したアルミニウムディスクを含む、請求項11記載の方法。
- 前記ディスクがメモリーディスクである、請求項12記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/170,954 | 2008-07-10 | ||
US12/170,954 US8247326B2 (en) | 2008-07-10 | 2008-07-10 | Method of polishing nickel-phosphorous |
PCT/US2009/003955 WO2010005543A2 (en) | 2008-07-10 | 2009-07-06 | Method of polishing nickel-phosphorous |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011527643A JP2011527643A (ja) | 2011-11-04 |
JP2011527643A5 JP2011527643A5 (ja) | 2011-12-15 |
JP5508413B2 true JP5508413B2 (ja) | 2014-05-28 |
Family
ID=41505533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011517411A Expired - Fee Related JP5508413B2 (ja) | 2008-07-10 | 2009-07-06 | ニッケル−リンの研磨方法 |
Country Status (8)
Country | Link |
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US (1) | US8247326B2 (ja) |
EP (1) | EP2311074B1 (ja) |
JP (1) | JP5508413B2 (ja) |
KR (1) | KR101259703B1 (ja) |
CN (1) | CN102089865B (ja) |
MY (1) | MY149715A (ja) |
TW (1) | TWI397578B (ja) |
WO (1) | WO2010005543A2 (ja) |
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US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
WO2014061417A1 (ja) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | Cmp用研磨液、貯蔵液及び研磨方法 |
SG11201602877RA (en) | 2013-10-18 | 2016-05-30 | Cabot Microelectronics Corp | Polishing composition and method for nickel-phosphorous coated memory disks |
US10358579B2 (en) * | 2013-12-03 | 2019-07-23 | Cabot Microelectronics Corporation | CMP compositions and methods for polishing nickel phosphorous surfaces |
US9909032B2 (en) * | 2014-01-15 | 2018-03-06 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks |
JP6484894B2 (ja) * | 2014-03-28 | 2019-03-20 | 山口精研工業株式会社 | 研磨剤組成物、および磁気ディスク基板の研磨方法 |
JP6511039B2 (ja) | 2014-03-28 | 2019-05-08 | 山口精研工業株式会社 | 研磨剤組成物、および磁気ディスク基板の研磨方法 |
TWI563073B (en) * | 2014-06-03 | 2016-12-21 | Cabot Microelectronics Corp | Cmp compositions and methods for polishing rigid disk surfaces |
JP6775511B2 (ja) | 2015-09-25 | 2020-10-28 | 山口精研工業株式会社 | 研磨剤組成物、および磁気ディスク基板の研磨方法 |
JP6775453B2 (ja) | 2017-03-23 | 2020-10-28 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
JP2019016417A (ja) | 2017-07-04 | 2019-01-31 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
JP7034667B2 (ja) | 2017-10-24 | 2022-03-14 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
US10698846B2 (en) * | 2018-11-07 | 2020-06-30 | Realtek Semiconductor Corporation | DDR SDRAM physical layer interface circuit and DDR SDRAM control device |
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JP2007179612A (ja) * | 2005-12-27 | 2007-07-12 | Kao Corp | 磁気ディスク基板用研磨液組成物 |
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-
2008
- 2008-07-10 US US12/170,954 patent/US8247326B2/en active Active
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2009
- 2009-07-06 EP EP09794806.1A patent/EP2311074B1/en not_active Not-in-force
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- 2009-07-06 WO PCT/US2009/003955 patent/WO2010005543A2/en active Application Filing
- 2009-07-06 CN CN200980126743.0A patent/CN102089865B/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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KR20110046465A (ko) | 2011-05-04 |
KR101259703B1 (ko) | 2013-05-06 |
EP2311074B1 (en) | 2014-03-19 |
US8247326B2 (en) | 2012-08-21 |
JP2011527643A (ja) | 2011-11-04 |
EP2311074A2 (en) | 2011-04-20 |
US20100009537A1 (en) | 2010-01-14 |
TW201012907A (en) | 2010-04-01 |
WO2010005543A3 (en) | 2010-04-29 |
TWI397578B (zh) | 2013-06-01 |
MY149715A (en) | 2013-10-14 |
CN102089865A (zh) | 2011-06-08 |
EP2311074A4 (en) | 2011-08-24 |
WO2010005543A2 (en) | 2010-01-14 |
CN102089865B (zh) | 2014-09-10 |
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