TWI483070B - 感放射線性組成物以及硬化膜及其形成方法 - Google Patents

感放射線性組成物以及硬化膜及其形成方法 Download PDF

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Publication number
TWI483070B
TWI483070B TW101109869A TW101109869A TWI483070B TW I483070 B TWI483070 B TW I483070B TW 101109869 A TW101109869 A TW 101109869A TW 101109869 A TW101109869 A TW 101109869A TW I483070 B TWI483070 B TW I483070B
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Taiwan
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component
compound
mass
mol
group
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TW101109869A
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English (en)
Chinese (zh)
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TW201239531A (en
Inventor
Yasunobu Suzuki
Akihisa Honda
Tsutomu Okuda
Jirou Ueda
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Jsr Corp
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Priority claimed from JP2012035072A external-priority patent/JP5720604B2/ja
Priority claimed from JP2012035073A external-priority patent/JP5729329B2/ja
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201239531A publication Critical patent/TW201239531A/zh
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Publication of TWI483070B publication Critical patent/TWI483070B/zh

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/12—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polysiloxanes
    • C08F283/122—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polysiloxanes on to saturated polysiloxanes containing hydrolysable groups, e.g. alkoxy-, thio-, hydroxy-
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
TW101109869A 2011-03-22 2012-03-22 感放射線性組成物以及硬化膜及其形成方法 TWI483070B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011062377 2011-03-22
JP2011078747 2011-03-31
JP2012035072A JP5720604B2 (ja) 2011-03-22 2012-02-21 感放射線性組成物、並びに硬化膜及びその形成方法
JP2012035073A JP5729329B2 (ja) 2011-03-31 2012-02-21 感放射線性組成物、並びに硬化膜及びその形成方法

Publications (2)

Publication Number Publication Date
TW201239531A TW201239531A (en) 2012-10-01
TWI483070B true TWI483070B (zh) 2015-05-01

Family

ID=46879127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101109869A TWI483070B (zh) 2011-03-22 2012-03-22 感放射線性組成物以及硬化膜及其形成方法

Country Status (4)

Country Link
KR (1) KR101798014B1 (ja)
CN (1) CN103348289B (ja)
TW (1) TWI483070B (ja)
WO (1) WO2012127964A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5938772B2 (ja) * 2012-12-12 2016-06-22 東洋インキＳｃホールディングス株式会社 感光性着色組成物、およびカラーフィルタ
JP6137862B2 (ja) * 2013-02-20 2017-05-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ネガ型感光性シロキサン組成物
JP6377056B2 (ja) * 2013-05-30 2018-08-22 三洋化成工業株式会社 感光性樹脂組成物、フォトスペーサー、カラーフィルター用保護膜、及び、タッチパネルの保護膜もしくは絶縁膜
TWI586787B (zh) * 2013-07-04 2017-06-11 Jsr股份有限公司 有機ｅｌ元件
US9977329B2 (en) 2014-01-24 2018-05-22 Toray Industries, Inc. Negative photosensitive resin composition, cured film obtained by curing same, method for producing cured film, optical device provided with cured film, and backside-illuminated CMOS image sensor
TWI521308B (zh) * 2014-03-28 2016-02-11 奇美實業股份有限公司 感光性聚矽氧烷組成物及其應用
JP6337190B1 (ja) * 2017-03-29 2018-06-06 東洋インキＳｃホールディングス株式会社 固体撮像素子向けカラーフィルタ用感光性緑色着色組成物および固体撮像素子用カラーフィルタ
JP7227738B2 (ja) * 2018-11-07 2023-02-22 サカタインクス株式会社 皮膜形成用組成物、該皮膜形成用組成物を塗工してなるガラス基材、及び、該ガラス基材を用いてなるタッチパネル

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008007640A (ja) * 2006-06-29 2008-01-17 Mitsubishi Chemicals Corp シロキサン樹脂、熱硬化性組成物、硬化物、ｔｆｔアクティブマトリックス基板、カラーフィルタ基板及び液晶表示装置
JP2009019093A (ja) * 2007-07-11 2009-01-29 Asahi Kasei Electronics Co Ltd ポリオルガノシロキサン
TW201035688A (en) * 2008-12-19 2010-10-01 Nissan Chemical Ind Ltd Resist underlayer coating composition containing silicone having anionic group
WO2011011142A2 (en) * 2009-07-23 2011-01-27 Dow Corning Corporation Method and materials for reverse patterning

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4110401B2 (ja) 2003-06-13 2008-07-02 信越化学工業株式会社 感光性シリコーン樹脂組成物及びその硬化物並びにネガ型微細パターンの形成方法
KR100882794B1 (ko) * 2005-03-01 2009-02-09 제이에스알 가부시끼가이샤 레지스트 하층막용 조성물 및 그의 제조 방법
JP2007248808A (ja) * 2006-03-16 2007-09-27 Sekisui Chem Co Ltd シリコン含有感光性組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
JP2010039056A (ja) 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
JP5504689B2 (ja) * 2008-11-28 2014-05-28 東レ株式会社 ネガ型感光性樹脂組成物およびそれを用いたタッチパネル用材料
JP5353407B2 (ja) * 2009-04-22 2013-11-27 Ｊｓｒ株式会社 ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008007640A (ja) * 2006-06-29 2008-01-17 Mitsubishi Chemicals Corp シロキサン樹脂、熱硬化性組成物、硬化物、ｔｆｔアクティブマトリックス基板、カラーフィルタ基板及び液晶表示装置
JP2009019093A (ja) * 2007-07-11 2009-01-29 Asahi Kasei Electronics Co Ltd ポリオルガノシロキサン
TW201035688A (en) * 2008-12-19 2010-10-01 Nissan Chemical Ind Ltd Resist underlayer coating composition containing silicone having anionic group
WO2011011142A2 (en) * 2009-07-23 2011-01-27 Dow Corning Corporation Method and materials for reverse patterning

Also Published As

Publication number Publication date
CN103348289A (zh) 2013-10-09
KR20140007847A (ko) 2014-01-20
CN103348289B (zh) 2016-04-13
KR101798014B1 (ko) 2017-11-15
WO2012127964A1 (ja) 2012-09-27
TW201239531A (en) 2012-10-01

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