TWI480360B - 蝕刻劑組成物及方法 - Google Patents

蝕刻劑組成物及方法 Download PDF

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Publication number
TWI480360B
TWI480360B TW099108561A TW99108561A TWI480360B TW I480360 B TWI480360 B TW I480360B TW 099108561 A TW099108561 A TW 099108561A TW 99108561 A TW99108561 A TW 99108561A TW I480360 B TWI480360 B TW I480360B
Authority
TW
Taiwan
Prior art keywords
acid
etchant
salt
etchant composition
metal film
Prior art date
Application number
TW099108561A
Other languages
English (en)
Chinese (zh)
Other versions
TW201105780A (en
Inventor
羅伯特 傑佛瑞 杜蘭特
李承璡
湯瑪斯 彼得 圖發諾
朴英哲
李俊雨
李承傭
李鉉奎
李喻珍
張□勳
Original Assignee
杜邦股份有限公司
東友化學有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/721,903 external-priority patent/US20100252530A1/en
Application filed by 杜邦股份有限公司, 東友化學有限公司 filed Critical 杜邦股份有限公司
Publication of TW201105780A publication Critical patent/TW201105780A/zh
Application granted granted Critical
Publication of TWI480360B publication Critical patent/TWI480360B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW099108561A 2009-04-03 2010-03-23 蝕刻劑組成物及方法 TWI480360B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16627309P 2009-04-03 2009-04-03
US16626709P 2009-04-03 2009-04-03
US12/721,903 US20100252530A1 (en) 2009-04-03 2010-03-11 Etchant composition and method

Publications (2)

Publication Number Publication Date
TW201105780A TW201105780A (en) 2011-02-16
TWI480360B true TWI480360B (zh) 2015-04-11

Family

ID=42173851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099108561A TWI480360B (zh) 2009-04-03 2010-03-23 蝕刻劑組成物及方法

Country Status (4)

Country Link
JP (1) JP5687685B2 (https=)
CN (1) CN102395708B (https=)
TW (1) TWI480360B (https=)
WO (1) WO2010115075A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI675125B (zh) * 2017-05-22 2019-10-21 日商Ｍｅｃ股份有限公司 蝕刻液、補給液以及銅配線的形成方法

Families Citing this family (20)

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US9644274B2 (en) 2011-07-04 2017-05-09 Mitsubishi Gas Chemical Company, Inc. Etching solution for copper or a compound comprised mainly of copper
CN103764874B (zh) * 2011-08-31 2016-07-27 东友精细化工有限公司 用于包括铜和钛的金属层的蚀刻液组合物
JP5799791B2 (ja) * 2011-12-16 2015-10-28 三菱瓦斯化学株式会社 銅及びモリブデンを含む多層膜用エッチング液
JP6135999B2 (ja) * 2012-04-10 2017-05-31 三菱瓦斯化学株式会社 銅およびモリブデンを含む多層膜のエッチングに使用される液体組成物、およびそれを用いたエッチング方法
KR101394133B1 (ko) * 2012-08-22 2014-05-15 주식회사 이엔에프테크놀로지 몰리브덴 합금막 및 인듐 산화막 식각액 조성물
CN102923963A (zh) * 2012-11-15 2013-02-13 杭州格林达化学有限公司 一种玻璃减薄刻蚀液补充液
CN103924242B (zh) * 2013-01-14 2016-05-11 易安爱富科技有限公司 铜/钼膜或铜/钼合金膜的蚀刻液组合物
KR101714453B1 (ko) * 2013-04-15 2017-03-22 멕크 가부시키가이샤 에칭액, 보급액 및 구리 배선의 형성 방법
JP6207248B2 (ja) * 2013-06-17 2017-10-04 株式会社Adeka エッチング液組成物及びエッチング方法
CN104233302B (zh) * 2014-09-15 2016-09-14 南通万德科技有限公司 一种蚀刻液及其应用
CN108141961B (zh) * 2015-11-27 2020-08-14 三井金属矿业株式会社 带布线图案的树脂层叠体的制造方法
CN108930037B (zh) * 2017-05-22 2021-02-26 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
KR102433304B1 (ko) * 2017-08-11 2022-08-16 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
KR102457165B1 (ko) * 2017-08-11 2022-10-19 동우 화인켐 주식회사 은 함유막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
CN109423647B (zh) * 2017-08-28 2021-01-15 东友精细化工有限公司 金属膜蚀刻液组合物及利用其的导电图案形成方法
KR102457174B1 (ko) * 2017-08-28 2022-10-19 동우 화인켐 주식회사 은 함유막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
CN108004598A (zh) * 2017-12-01 2018-05-08 绍兴拓邦电子科技有限公司 一种晶体硅边缘刻蚀添加剂及其使用方法
EP3761766A1 (en) * 2019-07-03 2021-01-06 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Anisotropic etching using additives
CN110938822A (zh) * 2019-11-14 2020-03-31 浙江工业大学 一种钼/铜复合金属层的蚀刻液、蚀刻方法与应用
JPWO2024190648A1 (https=) * 2023-03-14 2024-09-19

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CN1768005A (zh) * 2003-03-31 2006-05-03 纳幕尔杜邦公司 过一硫酸氢钾溶液
TW200908148A (en) * 2007-03-31 2009-02-16 Advanced Tech Materials Methods for stripping material for wafer reclamation

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US5855805A (en) * 1996-08-08 1999-01-05 Fmc Corporation Microetching and cleaning of printed wiring boards
JP3974305B2 (ja) * 1999-06-18 2007-09-12 エルジー フィリップス エルシーディー カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法と電子機器
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JP2005029853A (ja) * 2003-07-08 2005-02-03 Mitsubishi Gas Chem Co Inc 銅および銅合金のエッチング液
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
US7090820B2 (en) * 2003-09-23 2006-08-15 Truox, Inc. Potassium monopersulfate triple salt with increased active oxygen content and substantially no K2S2O8
US7442323B2 (en) * 2006-06-02 2008-10-28 E. I. Du Pont De Nemours And Company Potassium monopersulfate solutions
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JP5559956B2 (ja) * 2007-03-15 2014-07-23 東進セミケム株式会社 薄膜トランジスタ液晶表示装置のエッチング液組成物

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Publication number Priority date Publication date Assignee Title
CN1768005A (zh) * 2003-03-31 2006-05-03 纳幕尔杜邦公司 过一硫酸氢钾溶液
TW200908148A (en) * 2007-03-31 2009-02-16 Advanced Tech Materials Methods for stripping material for wafer reclamation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI675125B (zh) * 2017-05-22 2019-10-21 日商Ｍｅｃ股份有限公司 蝕刻液、補給液以及銅配線的形成方法

Also Published As

Publication number Publication date
JP2012522895A (ja) 2012-09-27
CN102395708B (zh) 2016-10-26
WO2010115075A1 (en) 2010-10-07
JP5687685B2 (ja) 2015-03-18
CN102395708A (zh) 2012-03-28
TW201105780A (en) 2011-02-16

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