TWI476927B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

Info

Publication number
TWI476927B
TWI476927B TW097111176A TW97111176A TWI476927B TW I476927 B TWI476927 B TW I476927B TW 097111176 A TW097111176 A TW 097111176A TW 97111176 A TW97111176 A TW 97111176A TW I476927 B TWI476927 B TW I476927B
Authority
TW
Taiwan
Prior art keywords
crystal semiconductor
region
semiconductor layer
single crystal
forming
Prior art date
Application number
TW097111176A
Other languages
English (en)
Chinese (zh)
Other versions
TW200903811A (en
Inventor
宮入秀和
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200903811A publication Critical patent/TW200903811A/zh
Application granted granted Critical
Publication of TWI476927B publication Critical patent/TWI476927B/zh

Links

Classifications

    • H10P34/42—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/425—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different crystal properties in different TFTs or within an individual TFT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
TW097111176A 2007-05-18 2008-03-28 半導體裝置的製造方法 TWI476927B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007132540 2007-05-18

Publications (2)

Publication Number Publication Date
TW200903811A TW200903811A (en) 2009-01-16
TWI476927B true TWI476927B (zh) 2015-03-11

Family

ID=40027928

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097111176A TWI476927B (zh) 2007-05-18 2008-03-28 半導體裝置的製造方法

Country Status (4)

Country Link
US (1) US7960262B2 (enExample)
JP (2) JP2009004756A (enExample)
CN (1) CN101308772B (enExample)
TW (1) TWI476927B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5654206B2 (ja) 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
JP2009260315A (ja) * 2008-03-26 2009-11-05 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
JP5552276B2 (ja) * 2008-08-01 2014-07-16 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
SG161151A1 (en) * 2008-10-22 2010-05-27 Semiconductor Energy Lab Soi substrate and method for manufacturing the same
SG162675A1 (en) * 2008-12-15 2010-07-29 Semiconductor Energy Lab Manufacturing method of soi substrate and manufacturing method of semiconductor device
WO2013054823A1 (en) * 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI721077B (zh) 2015-12-28 2021-03-11 日商日立造船股份有限公司 奈米碳管複合材料及奈米碳管複合材料的製造方法
KR101936795B1 (ko) * 2017-03-31 2019-01-11 (주)알엔알랩 레이저를 이용한 간접 가열 방법
JP6743752B2 (ja) 2017-04-20 2020-08-19 三菱電機株式会社 半導体装置の製造方法
CN107833924B (zh) * 2017-10-26 2020-06-19 京东方科技集团股份有限公司 顶栅型薄膜晶体管及其制备方法、阵列基板、显示面板
KR102318309B1 (ko) * 2018-05-31 2021-10-28 삼성전자주식회사 3차원 구조의 도핑 농도 결정 방법, 이를 이용한 반도체 장치의 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US20070063281A1 (en) * 2002-03-26 2007-03-22 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923962A (en) * 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TW264575B (enExample) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
JP3067949B2 (ja) * 1994-06-15 2000-07-24 シャープ株式会社 電子装置および液晶表示装置
JPH1197379A (ja) 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000216265A (ja) * 1999-01-22 2000-08-04 Mega Chips Corp 半導体装置及びその製造方法
JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP4101409B2 (ja) * 1999-08-19 2008-06-18 シャープ株式会社 半導体装置の製造方法
JP2001318652A (ja) * 2000-05-08 2001-11-16 Matsushita Electric Ind Co Ltd アクティブマトリクス液晶表示素子
JP2003142402A (ja) * 2001-08-10 2003-05-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
JP4772258B2 (ja) * 2002-08-23 2011-09-14 シャープ株式会社 Ｓｏｉ基板の製造方法
US7508034B2 (en) * 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
JP4759919B2 (ja) 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
JP5072208B2 (ja) * 2004-09-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7897443B2 (en) * 2005-04-26 2011-03-01 Sharp Kabushiki Kaisha Production method of semiconductor device and semiconductor device
JP2007036216A (ja) * 2005-06-24 2007-02-08 Semiconductor Energy Lab Co Ltd 半導体装置及び無線通信システム
JP2007079431A (ja) * 2005-09-16 2007-03-29 Toshiba Matsushita Display Technology Co Ltd 表示素子用アレイ基板及びその作製方法、これを用いた表示素子
CN101281912B (zh) * 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置
KR101457656B1 (ko) * 2007-05-17 2014-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법, 표시장치의 제조방법, 반도체장치,표시장치 및 전자기기
US7745268B2 (en) * 2007-06-01 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528397A (en) * 1991-12-03 1996-06-18 Kopin Corporation Single crystal silicon transistors for display panels
US20070063281A1 (en) * 2002-03-26 2007-03-22 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
US20070087488A1 (en) * 2005-10-18 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
CN101308772A (zh) 2008-11-19
JP2014170959A (ja) 2014-09-18
US20080286911A1 (en) 2008-11-20
JP2009004756A (ja) 2009-01-08
CN101308772B (zh) 2013-01-02
US7960262B2 (en) 2011-06-14
TW200903811A (en) 2009-01-16

Similar Documents

Publication Publication Date Title
TWI476927B (zh) 半導體裝置的製造方法
KR101492464B1 (ko) 반도체장치의 제조방법
US7919392B2 (en) Semiconductor device and method of manufacturing the same
US7508034B2 (en) Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
US7893439B2 (en) Silicon nitride film and semiconductor device
US7883988B2 (en) Method for manufacturing semiconductor substrate
KR20100065145A (ko) 반도체 장치 및 전자 기기
US20110081769A1 (en) Method for manufacturing semiconductor device
US8946820B2 (en) Method for manufacturing semiconductor substrate, substrate for forming semiconductor substrate, stacked substrate, semiconductor substrate, and electronic device
KR100879047B1 (ko) 반도체 장치 및 그 제조방법
JP4684877B2 (ja) 薄膜積層基板、及びその製造方法、並びに表示装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees