TWI475316B - A method of manufacturing a mask and a mask, and a method of transferring the pattern - Google Patents

A method of manufacturing a mask and a mask, and a method of transferring the pattern Download PDF

Info

Publication number
TWI475316B
TWI475316B TW102117083A TW102117083A TWI475316B TW I475316 B TWI475316 B TW I475316B TW 102117083 A TW102117083 A TW 102117083A TW 102117083 A TW102117083 A TW 102117083A TW I475316 B TWI475316 B TW I475316B
Authority
TW
Taiwan
Prior art keywords
light
film
phase shift
pattern
representative wavelength
Prior art date
Application number
TW102117083A
Other languages
English (en)
Chinese (zh)
Other versions
TW201400977A (zh
Inventor
今敷修久
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201400977A publication Critical patent/TW201400977A/zh
Application granted granted Critical
Publication of TWI475316B publication Critical patent/TWI475316B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW102117083A 2012-06-01 2013-05-14 A method of manufacturing a mask and a mask, and a method of transferring the pattern TWI475316B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012126114A JP6093117B2 (ja) 2012-06-01 2012-06-01 フォトマスク、フォトマスクの製造方法及びパターンの転写方法

Publications (2)

Publication Number Publication Date
TW201400977A TW201400977A (zh) 2014-01-01
TWI475316B true TWI475316B (zh) 2015-03-01

Family

ID=49737384

Family Applications (3)

Application Number Title Priority Date Filing Date
TW102117083A TWI475316B (zh) 2012-06-01 2013-05-14 A method of manufacturing a mask and a mask, and a method of transferring the pattern
TW104136941A TWI605300B (zh) 2012-06-01 2013-05-14 Photomask, pattern transfer method, flat panel display manufacturing method, and blank mask
TW104101989A TWI516857B (zh) 2012-06-01 2013-05-14 A flat panel display manufacturing mask, a pattern transfer method, and a method of manufacturing a flat panel display

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW104136941A TWI605300B (zh) 2012-06-01 2013-05-14 Photomask, pattern transfer method, flat panel display manufacturing method, and blank mask
TW104101989A TWI516857B (zh) 2012-06-01 2013-05-14 A flat panel display manufacturing mask, a pattern transfer method, and a method of manufacturing a flat panel display

Country Status (4)

Country Link
JP (1) JP6093117B2 (https=)
KR (2) KR101528973B1 (https=)
CN (2) CN105573046B (https=)
TW (3) TWI475316B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103969940A (zh) 2014-04-22 2014-08-06 京东方科技集团股份有限公司 相移掩模板和源漏掩模板
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
JP6774505B2 (ja) * 2016-12-28 2020-10-28 富士フイルム株式会社 パターンの製造方法、カラーフィルタの製造方法、固体撮像素子の製造方法および画像表示装置の製造方法
CN108319103B (zh) * 2017-01-16 2023-11-28 Hoya株式会社 相移掩模坯料及使用其的相移掩模的制造方法、以及显示装置的制造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP2019012280A (ja) * 2018-09-19 2019-01-24 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
TWI712851B (zh) * 2018-10-22 2020-12-11 日商Ｈｏｙａ股份有限公司 光罩、光罩之製造方法及電子元件之製造方法
JP7261709B2 (ja) * 2019-09-13 2023-04-20 Hoya株式会社 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法
JP7383490B2 (ja) * 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス フォトマスク
JP6872061B2 (ja) * 2020-05-11 2021-05-19 Hoya株式会社 フォトマスク及び表示装置の製造方法
CN116027625A (zh) * 2021-10-25 2023-04-28 深圳莱宝高科技股份有限公司 一种掩膜装置与曝光装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW466584B (en) * 1999-11-08 2001-12-01 Matsushita Electronics Corp Photomask, method of producing photomask, and method of making pattern using photomask
US20040086788A1 (en) * 2002-04-26 2004-05-06 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
TW200827924A (en) * 2006-12-25 2008-07-01 Nanya Technology Corp Alternating phase shift mask and method of the same
JP2009042753A (ja) * 2007-07-19 2009-02-26 Hoya Corp フォトマスク及びその製造方法、並びにパターン転写方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0311345A (ja) * 1989-06-08 1991-01-18 Oki Electric Ind Co Ltd ホトマスク及びこれを用いたパターン形成方法
JPH03177841A (ja) * 1989-12-06 1991-08-01 Oki Electric Ind Co Ltd ネガ型レジスト用ホトマスク
JPH05158214A (ja) * 1991-03-13 1993-06-25 Ryoden Semiconductor Syst Eng Kk 位相シフトマスクおよびその製造方法
JP2933759B2 (ja) * 1991-09-12 1999-08-16 川崎製鉄株式会社 位相シフトマスクの製造方法
JPH06123961A (ja) * 1992-10-12 1994-05-06 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク並びに位相シフトマスクの製造方法
JPH0798493A (ja) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd 位相シフトマスク及びその製造方法
KR19980016800A (ko) * 1996-08-29 1998-06-05 김광호 위상반전 마스크 및 그 제조방법
JP3984626B2 (ja) * 2001-12-26 2007-10-03 松下電器産業株式会社 パターン形成方法
JP4314288B2 (ja) * 2001-12-26 2009-08-12 パナソニック株式会社 フォトマスク
JP3759138B2 (ja) * 2003-02-17 2006-03-22 松下電器産業株式会社 フォトマスク
JP4314285B2 (ja) * 2003-02-17 2009-08-12 パナソニック株式会社 フォトマスク
US7147975B2 (en) * 2003-02-17 2006-12-12 Matsushita Electric Industrial Co., Ltd. Photomask
JP2004279484A (ja) * 2003-03-12 2004-10-07 Dainippon Printing Co Ltd 位相シフトマスク
JP4009219B2 (ja) * 2003-04-10 2007-11-14 松下電器産業株式会社 フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
JP4574343B2 (ja) * 2004-12-15 2010-11-04 三星電子株式会社 位相シフトマスク及びパターン形成方法
CN100570480C (zh) * 2005-08-02 2009-12-16 联华电子股份有限公司 设计掩模的方法
EP2003498A4 (en) * 2006-03-06 2011-12-14 Panasonic Corp PHOTOMASK, METHOD FOR PRODUCING SUCH A PHOTOMASK, METHOD FOR FORMING A PATTERN WITH THE PHOTOMASK AND METHOD FOR CREATING MASK DATA
JP4993934B2 (ja) * 2006-03-31 2012-08-08 Ｈｏｙａ株式会社 パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法
JP4934237B2 (ja) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
JP2009128558A (ja) * 2007-11-22 2009-06-11 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP5588633B2 (ja) 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
TWI461833B (zh) * 2010-03-15 2014-11-21 Ｈｏｙａ股份有限公司 多調式光罩、多調式光罩之製造方法及圖案轉印方法
JP2011215226A (ja) * 2010-03-31 2011-10-27 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、多階調フォトマスク用ブランク及びパターン転写方法
JP5400698B2 (ja) * 2010-04-28 2014-01-29 Ｈｏｙａ株式会社 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法及び多階調フォトマスクの使用方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW466584B (en) * 1999-11-08 2001-12-01 Matsushita Electronics Corp Photomask, method of producing photomask, and method of making pattern using photomask
US20040086788A1 (en) * 2002-04-26 2004-05-06 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
TW200827924A (en) * 2006-12-25 2008-07-01 Nanya Technology Corp Alternating phase shift mask and method of the same
JP2009042753A (ja) * 2007-07-19 2009-02-26 Hoya Corp フォトマスク及びその製造方法、並びにパターン転写方法

Also Published As

Publication number Publication date
TW201606421A (zh) 2016-02-16
KR20140099427A (ko) 2014-08-12
TWI605300B (zh) 2017-11-11
CN105573046B (zh) 2019-12-10
KR20130135751A (ko) 2013-12-11
TWI516857B (zh) 2016-01-11
CN103454851A (zh) 2013-12-18
CN105573046A (zh) 2016-05-11
KR101528973B1 (ko) 2015-06-15
CN103454851B (zh) 2016-05-18
TW201400977A (zh) 2014-01-01
JP6093117B2 (ja) 2017-03-08
JP2013250478A (ja) 2013-12-12
TW201523123A (zh) 2015-06-16
KR101999412B1 (ko) 2019-07-11

Similar Documents

Publication Publication Date Title
TWI475316B (zh) A method of manufacturing a mask and a mask, and a method of transferring the pattern
TWI541588B (zh) 顯示裝置製造用光罩、及圖案轉印方法
TWI658320B (zh) 圖案轉印方法及顯示裝置之製造方法
KR101624436B1 (ko) 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법
TWI387845B (zh) 灰階遮罩及圖案轉印方法
JP7276778B2 (ja) フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
TWI663468B (zh) 光罩之製造方法、光罩、及顯示裝置之製造方法
TWI651585B (zh) 光罩及顯示裝置之製造方法
JP6322250B2 (ja) フォトマスクブランク
CN102692816A (zh) 光掩模的制造方法、图案转印方法及显示装置的制造方法
TWI721247B (zh) 顯示裝置製造用光罩、及顯示裝置之製造方法
TWI585514B (zh) 光罩之製造方法、光罩及顯示裝置之製造方法