TWI472872B - 反射型遮罩之製造方法及反射型遮罩之製造裝置 - Google Patents

反射型遮罩之製造方法及反射型遮罩之製造裝置 Download PDF

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Publication number
TWI472872B
TWI472872B TW102111245A TW102111245A TWI472872B TW I472872 B TWI472872 B TW I472872B TW 102111245 A TW102111245 A TW 102111245A TW 102111245 A TW102111245 A TW 102111245A TW I472872 B TWI472872 B TW I472872B
Authority
TW
Taiwan
Prior art keywords
layer
gas
forming
mask
pattern region
Prior art date
Application number
TW102111245A
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English (en)
Chinese (zh)
Other versions
TW201348858A (zh
Inventor
山崎克弘
出村健介
Original Assignee
芝浦機械電子裝置股份有限公司
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Application filed by 芝浦機械電子裝置股份有限公司 filed Critical 芝浦機械電子裝置股份有限公司
Publication of TW201348858A publication Critical patent/TW201348858A/zh
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Publication of TWI472872B publication Critical patent/TWI472872B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW102111245A 2012-03-28 2013-03-28 反射型遮罩之製造方法及反射型遮罩之製造裝置 TWI472872B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012074905 2012-03-28
JP2012113788A JP5921953B2 (ja) 2012-03-28 2012-05-17 反射型マスクの製造方法、および反射型マスクの製造装置

Publications (2)

Publication Number Publication Date
TW201348858A TW201348858A (zh) 2013-12-01
TWI472872B true TWI472872B (zh) 2015-02-11

Family

ID=49235487

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102111245A TWI472872B (zh) 2012-03-28 2013-03-28 反射型遮罩之製造方法及反射型遮罩之製造裝置

Country Status (4)

Country Link
US (2) US8999612B2 (https=)
JP (1) JP5921953B2 (https=)
KR (1) KR101363112B1 (https=)
TW (1) TWI472872B (https=)

Cited By (1)

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TWI742950B (zh) * 2020-01-16 2021-10-11 台灣積體電路製造股份有限公司 反射遮罩及其製造方法

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KR102109129B1 (ko) * 2013-07-02 2020-05-08 삼성전자주식회사 반사형 포토마스크 블랭크 및 반사형 포토마스크
US9341941B2 (en) * 2013-08-01 2016-05-17 Samsung Electronics Co., Ltd. Reflective photomask blank, reflective photomask, and integrated circuit device manufactured by using reflective photomask
WO2015137077A1 (ja) * 2014-03-11 2015-09-17 芝浦メカトロニクス株式会社 反射型マスクの洗浄装置および反射型マスクの洗浄方法
JP2019053229A (ja) 2017-09-15 2019-04-04 東芝メモリ株式会社 露光用マスクおよびその製造方法
US10802393B2 (en) * 2017-10-16 2020-10-13 Globalfoundries Inc. Extreme ultraviolet (EUV) lithography mask
US11086215B2 (en) * 2017-11-15 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced mask shadowing effect and method of manufacturing the same
KR102802783B1 (ko) * 2018-06-13 2025-05-07 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크 및 반사형 마스크 블랭크의 제조 방법
US11619875B2 (en) * 2020-06-29 2023-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof

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JP2005191511A (ja) * 2003-12-02 2005-07-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
WO2006062099A1 (ja) * 2004-12-10 2006-06-15 Toppan Printing Co., Ltd. 反射型フォトマスクブランク、反射型フォトマスク、及びこれを用いた半導体装置の製造方法
US20120045712A1 (en) * 2010-08-17 2012-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (euv) photomasks, and fabrication methods thereof

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KR100455383B1 (ko) * 2002-04-18 2004-11-06 삼성전자주식회사 반사 포토마스크, 반사 포토마스크의 제조방법 및 이를이용한 집적회로 제조방법
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JP5200327B2 (ja) * 2006-03-31 2013-06-05 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク及びその製造方法、並びに、極端紫外光の露光方法
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JP5419612B2 (ja) * 2008-10-23 2014-02-19 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、反射型マスクブランクの製造方法及び反射型マスクの製造方法
JP5269548B2 (ja) * 2008-10-31 2013-08-21 株式会社日立国際電気 基板処理装置及び基板処理装置の基板搬送方法
KR20120060832A (ko) * 2009-08-25 2012-06-12 실버브룩 리서치 피티와이 리미티드 Ｖｉａｓ로부터 포토레지스트 및 에칭 잔류물 제거방법
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US20120045712A1 (en) * 2010-08-17 2012-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Extreme ultraviolet light (euv) photomasks, and fabrication methods thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI742950B (zh) * 2020-01-16 2021-10-11 台灣積體電路製造股份有限公司 反射遮罩及其製造方法
US11204545B2 (en) 2020-01-16 2021-12-21 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
US11726399B2 (en) 2020-01-16 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
US12044960B2 (en) 2020-01-16 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. EUV photo masks and manufacturing method thereof
US12346027B2 (en) 2020-01-16 2025-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of making a semiconductor device

Also Published As

Publication number Publication date
US9513557B2 (en) 2016-12-06
KR101363112B1 (ko) 2014-02-13
US20130260292A1 (en) 2013-10-03
JP2013229537A (ja) 2013-11-07
US8999612B2 (en) 2015-04-07
US20150177624A1 (en) 2015-06-25
JP5921953B2 (ja) 2016-05-24
TW201348858A (zh) 2013-12-01
KR20130110050A (ko) 2013-10-08

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