TWI472546B - 丙烯酸酯聚氨酯化學機械研磨層 - Google Patents
丙烯酸酯聚氨酯化學機械研磨層 Download PDFInfo
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- TWI472546B TWI472546B TW101134644A TW101134644A TWI472546B TW I472546 B TWI472546 B TW I472546B TW 101134644 A TW101134644 A TW 101134644A TW 101134644 A TW101134644 A TW 101134644A TW I472546 B TWI472546 B TW I472546B
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- isocyanate
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- 238000012876 topography Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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Description
本發明係關於化學機械研磨墊以及製造與使用該研磨墊之方法。特別地,本發明關於一種包含丙烯酸酯聚氨酯研磨層之化學機械研磨墊,其中該研磨層顯示拉伸模數為65至500MPa;斷裂延長率為50至250%;儲存模數G'為25至200 MPa;蕭氏D硬度為25至75;以及濕式切割速率為1至10μ
m/分鐘。
在積體電路及其他電子裝置之製造中,將導電性、半導電性及介電性材料之複數層沉積於半導體晶圓之表面上以及將其等自該半導體晶圓之表面上移除。導電性、半導電性及介電性材料之薄層可使用數種沉積技術沉積。其中,近代晶圓加工中常見的沉積技術包括物理氣相沉積(PVD)(亦知悉為濺鍍)、化學氣相沉積(CVD)、電漿增強化學氣相沉積(PECVD)及電化學電鍍。常見的移除技術包括濕式及乾式等向性及異向性蝕刻等。
當材料層相繼地沉積及移除,晶圓最上層表面變得不平坦。因為後續的半導體加工(例如:金屬化)要求該晶圓具有平坦的表面,該晶圓必須經平坦化。平坦化對於移除不欲的表面形貌及表面缺陷(諸如粗糙的表面、結塊的材料、結晶晶格損壞、刮傷及受
污染的層或材料)有用。
化學機械平坦化或化學機械研磨(CMP)為常見的用於平坦化或拋光工作件(諸如:半導體晶圓)之技術。於傳統的CMP中,晶圓載件或研磨頭係安裝於載體組合件上。該研磨頭夾持該晶圓並將該晶圓放在與研磨墊之研磨層接觸的位置,該研磨墊安裝於CMP設備內之桌台或平台上。該載體組合件提供於該晶圓及研磨墊間之可控制的壓力。同時地,將研磨介質(例如:漿料)分注於研磨墊上,並引入至於該晶圓與研磨層間之空隙中。該研磨墊及晶圓典型地相對於彼此旋轉以實行研磨。當該研磨墊於晶圓下方旋轉時,該晶圓掃出典型地環狀的研磨軌跡或研磨區域,其中該晶圓的表面直接面對該研磨層。藉由該研磨層及於該表面上之研磨介質的化學性及機械性的作用,而使該晶圓表面被研磨且被平坦化。
墊表面“調質(condifioning)”或“修整(dressing)”對於維持一致的研磨表面以提供穩定的研磨效能是重要的。隨著時間,研磨墊之研磨表面磨損,使研磨表面之微紋理平滑化(稱為“研光(glazing)”之現象)。研磨墊之調質典型地藉由以調質碟將研磨表面機械地摩擦而達成。該調質碟具有典型地由包埋的鑽石點所構成之粗糙的調質表面。當研磨暫停(“異位(ex situ)”)時於CMP工序間歇性的中斷期間,或在當CMP工序正在進行(“原位(in situ)”)時,將調質碟與該研磨表面接觸。典型地該調質碟於相對於該研磨墊之旋轉軸固定成之位置旋轉,並且當研磨墊旋轉時,掃出環狀的調質區域。如所述之調質工序於該墊表面切割出微小的溝槽,摩擦及開溝該墊材料並更新(renew)該研磨紋理。
聚氨酯研磨層的族群顯示極佳平坦化及缺陷效能係由Kulp於美國專利第7,169,030號所揭露。Kulp揭露包含聚合性基質之研磨墊,該聚合性基質具有頂部研磨表面,該頂部研磨表面具有聚合性的研磨粗糙性或在藉由研磨劑之調質時形成聚合性的研磨粗糙性,該聚合性的研磨粗糙性自聚合性基質延伸,並成為該頂部研磨表面在研磨期間可與基板接觸的一部分,由具有磨損性之聚合性材料形成或使該頂部研磨表面調質而使該研磨墊形成額外的聚合性的研磨粗糙性,以及該聚合性的研磨粗糙性係來自具有至少6,500psi(44.8MPa)之整體極限拉伸強度以及至少250磅/英吋(4.5×103g/mm)之整體撕裂強度之聚合性材料。
於半導體晶圓之研磨期間達成低缺陷之傳統研磨層材料傾向於相對柔軟,並顯示高斷裂延長率值(>250%)。此等性質之平衡係抑制藉由鑽石調質形成紋理及粗糙性。
據此,對於提供與低缺陷調配物有關有良好相關之物理性質形態,且亦賦予研磨層增強的調質能力之研磨層調配物有持續的需求。
本發明提供一種包含研磨層之化學機械研磨墊,係用以研磨選自磁性基板、光學基板以及半導體基板中之至少一種之基板,其中,該研磨層包含原始材料成分之反應產物,該成分包含:(a)由(i)多官能性異氰酸酯與(ii)預聚物多元醇反應而製備之以異氰酸酯封端之氨酯預聚物;其中該以異氰酸酯封端之氨酯預聚物具有4至12重量%未反應之NCO基;(b)多胺鏈延伸劑;(c)選自由(烷基)丙烯酸羥烷酯及(甲基)丙烯酸2-胺基乙酯所組成之群組
之丙烯酸酯;以及(d)自由基起始劑;其中,該研磨層顯示拉伸模數為65至500MPa;斷裂延長率為50至250%;儲存模數G'為25至200 MPa;蕭氏D硬度為25至75;以及濕式切割速率為1至10μ
m/分鐘。
本發明亦提供一種製造根據申請專利範圍第1項所述之化學機械研磨墊之方法,係包含:(a)提供由聚官能性異氰酸酯與預聚物多元醇反應而製備之具有4至12重量%未反應之NCO之以異氰酸酯封端之氨酯預聚物;(b)提供多胺鏈延伸劑;(c)提供選自由(烷基)丙烯酸羥烷酯及(甲基)丙烯酸2-胺基乙酯所組成之群組之丙烯酸酯;(d)提供自由基起始劑;(e)混合該以異氰酸酯封端之氨酯預聚物及該丙烯酸酯;(f)添加多胺鏈延伸劑至(e)之組合中;(g)添加該自由基起始劑至(f)之組合中;以及(h)起始(g)之組合之聚合作用而形成研磨層。
本發明提供一種研磨基板之方法,包含:提供選自磁性基板、光學基板以及半導體基板中之至少一種之基板;提供申請專利範圍第1項所述之化學機械研磨墊;產生於研磨層之研磨表面與基板間之動態接觸而研磨基板之表面;以及以研磨性調質劑調質研磨表面。
本發明化學機械研磨墊之研磨層,包含原料材料成分之反應產物,該成分包含:(a)由(i)多官能性異氰酸酯與(ii)預聚物多元醇反應所製備之以異氰酸酯封端之氨酯預聚物;其中該以異氰酸
酯封端之氨酯預聚物具有4至12重量%未反應之NCO基(以5至10重量%未反應之NCO基為佳;最佳為5至9重量%未反應之NCO基)。較佳為該以異氰酸酯封端之氨酯預聚物顯示數目平均分子量MWN
為400至5,000(更佳為400至4,000;最佳為400至2,500);(b)多胺鏈延伸劑;以及(c)選自由(烷基)丙烯酸羥烷基酯及(甲基)丙烯酸2-胺基乙酯所組成之群組之丙烯酸酯;其中,該研磨層顯示當使用實施例中所提出之方法及條件所測量之拉伸模數為65至500MPa(較佳為100至350MPa);斷裂延長率為50至250%(較佳為50至150%;更佳為50至125%);儲存模數G'為25至200MPa;蕭氏D硬度為25至75(較佳為30至65;更佳為40至60);以及濕式切割速率為1至10μ
m/分鐘(較佳為1至7.5μ
m/分鐘)。較佳為該研磨層進一步顯示使用實施例中所提出之方法及條件所測量之拉伸強度為5至50MPa(較佳為10至40MPa)。較佳為該研磨層進一步顯示使用實施例中所提出之方法及條件所測量之粗糙性磨損(asperity wear)為<15%(於10分鐘期間)。較佳為該研磨層進一步顯示使用實施例中所提出之方法及條件所測量之水解安定性為1.5%。
較佳為製備本發明化學機械研磨墊之研磨層中作為原始材料成分所使用之多官能性異氰酸酯係選自脂肪族官能性異氰酸酯、芳香族多官能性異氰酸酯以及其混合物。更佳為該多官能性異氰酸酯係選自脂肪族二異氰酸酯、芳香族二異氰酸酯以及其混合物。又更佳為該多官能性異氰酸酯係選自1,6-己烷二異氰酸酯(HDI);異佛酮二異氰酸酯(PDI);亞甲基-雙(異氰酸對環己酯)(H12
MDI);甲苯二異氰酸酯(例如:2,4-甲苯二異氰酸酯;2,6-甲苯
二異氰酸酯);二苯基甲烷二異氰酸酯;萘二異氰酸酯(例如:萘-1,5-二異氰酸酯);聯甲苯胺二異氰酸酯;3,3'-聯甲苯二異氰酸酯;二苯基-4,4'-二異氰酸酯;四甲基二甲苯二異氰酸酯;對伸苯基二異氰酸酯;伸二甲苯基二異氰酸酯;以及其混合物。又再更佳為該多官能性異氰酸酯係選自2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;二苯基甲烷二異氰酸酯;萘二異氰酸酯;聯甲苯胺二異氰酸酯;3,3'-聯甲苯二異氰酸酯;二苯基-4,4'-二異氰酸酯;四甲基二甲苯二異氰酸酯;對伸苯基二異氰酸酯;伸二甲苯基二異氰酸酯;以及其混合物。最佳為該多官能性異氰酸酯係選自2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;以及其混合物。
較佳為製備本發明化學機械研磨墊之研磨層中作為原始材料成分所使用的預聚物多元醇係選自聚醚多元醇(例如:聚四亞甲基醚二醇、聚丙二醇醚)、聚碳酸酯多元醇、聚酯多元醇(例如:己二酸伸乙酯、己二酸伸丁酯)、聚己內酯多元醇、其共聚物以及其混合物。更佳為該預聚物多元醇係選自聚四亞甲基醚二醇(PTMEG)、聚丙二醇醚(PPG)、聚酯多元醇、聚己內酯多元醇、其共聚物以及其混合物。又更佳為該預聚物多元醇係選自PTMEG、PPG以及其混合物。最佳為該預聚物多元醇係PTMEG。
較佳為作為製備本發明化學機械研磨墊之研磨層之原始材料成分所使用的多胺鏈延伸劑係選自4,4’-亞甲基-雙-(2-氯苯胺)、4,4’-亞甲基-雙-(3-氯-2,6-二乙基苯胺)、二乙基甲苯二胺;二甲基硫基甲苯二胺、4,4'-雙(第二丁基胺基)二苯基甲烷、3,3’-亞甲基-雙(6-胺基-1,1-二甲基酯)、1,3-丙二醇雙-(4-胺基苯甲酸酯)、4,4’-亞甲基-雙-(2,6-二乙基苯胺)、4,4’-亞甲基-雙-(2,6-二異丙基
苯胺)、4,4’-亞甲基-雙-(2-異丙基-6-甲基苯胺)、2-[2-(2-胺基苯基)硫基乙基硫基]苯胺、4,4’-亞甲基-雙-(2-氯苯胺)、4,4-亞甲基雙(N-第二丁基苯胺)、三伸乙基二胺以及其混合物。更佳為該多胺鏈延伸劑係選自具有選自下述之化學式之多胺鏈延伸劑:,及其中,R1
、R2
、R3
及R4
係獨立地選自氫、C1-4
烷基以及C1-4
烷基硫基。又更佳為該多胺鏈延伸劑係選自二烷基甲苯二胺(例如:3,5-二烷基甲苯-2,4-二胺、3,5-二烷基甲苯-2,6-二胺);二烷基硫基甲苯二胺(例如:3,5-二烷基硫基甲苯-2,4-二胺)以及其混合物。又再更佳為該多胺鏈延伸劑係選自二乙基甲苯二胺(例如:3,5-二乙基甲苯-2,4-二胺、3,5-二烷基甲苯-2,6-二胺以及此等之混合物)、二甲基硫基甲苯二胺(例如:3,5-二甲基硫基甲苯-2,4-二胺)以及其混合物。最佳為該多胺鏈延伸劑係選自3,5-二乙基甲苯-2,4-二胺、3,5-二烷基甲苯-2,6-二胺、3,5-二甲基硫基甲苯-2,4-二胺以及其混合物。
較佳為製備本發明化學機械研磨墊之研磨層中作為原始材料成分所使用的丙烯酸酯為(C1-8
烷基)丙烯酸羥基C1-8
烷酯。較佳為該丙烯酸酯係選自甲基丙烯酸羥乙酯(HEMA)、甲基丙烯酸羥丙酯、聚丙二醇單甲基丙烯酸酯以及其混合物。更佳為該丙烯酸酯為甲基丙烯酸羥乙酯(HEMA)。
較佳為當製備本發明之化學機械研磨墊之研磨層中作為原始
材料成分所使用之丙烯酸酯為(甲基)丙烯酸2-胺基乙酯時,該丙烯酸酯中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO),以0.1至0.9為佳(較佳為0.2至0.8;更佳為0.3至0.7;最佳為0.4至0.6);以及該多胺鏈延伸劑中之胺基相對於以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO),以0.9至0.1為佳(較佳為0.8至0.2;更佳為0.7至0.3;又更佳為0.6至0.4)。最佳為當丙烯酸酯為(甲基)丙烯酸2-胺基乙酯時,該丙烯酸酯中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(OH/NCO),以0.4至0.6為佳;以及該多胺鏈延伸劑中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO),以0.6至0.4為佳。
較佳為當製備本發明之化學機械研磨墊之研磨層中作為原始材料成分所使用的丙烯酸酯為(烷基)丙烯酸羥烷酯時,該丙烯酸酯中之羥基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(OH/NCO),以0.1至0.9為佳(較佳為0.2至0.8;更佳為0.3至0.7;最佳0.4至0.6),以及該多胺鏈延伸劑中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO),以0.9至0.1為佳(較佳為0.8至0.2;更佳為0.7至0.3;最佳為0.6至0.4)。最佳為當丙烯酸酯為(烷基)丙烯酸羥烷酯時,該丙烯酸酯中之羥基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(OH/NCO),以0.4至0.6為佳,以及該多胺鏈延伸劑中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO),以0.6至0.4為佳。
製備本發明化學機械研磨墊之研磨層中作為原始材料成分所
使用的自由基起始劑可選自廣泛多種的化合物,包括:例如熱起始劑及光起始劑。熱起始劑包括:例如偶氮自由基起始劑,例如:2,2'-偶氮雙(異丁腈)("AIBN")及2,2'-偶氮雙(2,4-二甲基戊腈));以及過氧化物或過酸酯起始劑(例如:過氧化苯甲醯、過氧化癸醯、過氧化月桂醯、過氧化丁二酸、過氧化二異丙苯、2,5-二(第三丁基過氧基)-2,5-二甲基己烷、過氧化第三丁基異丙苯、過辛酸第三丁酯、過氧化二(第三丁基)、氫過氧化異丙苯、丙基氫過氧化物、異丙基氫過氧化物、第三戊基-2-乙基己酸酯、過氧化第三戊基第三戊酸酯、過氧化第三丁基第三戊酸酯、過氧化第三戊基-2-乙基己酸酯以及過氧化第三丁基-2-乙基己酸酯。光起始劑包括:例如2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、1-羥基環己基苯基酮。根據此等揭露之益處,所屬技術領域具有通常知識者將能選擇適當的自由基起始劑。
本發明之研磨層,其中該原始材料成分可視需要地復包含二元醇鏈延伸劑。較佳為該視需要的二元醇鏈延伸劑係選自乙二醇、1,2-丙二醇、1,3-丙二醇(1,3-propylene glycol)、1,3-丙二醇(1,3-propanediol)、1,1,1-三羥甲基丙烷、1,2-丁二醇、1,4-丁二醇、1,3-丁二醇、2-甲基-1,3-丙二醇、1,4-丁二醇、新戊二醇、1,5-戊二醇、3-甲基-1,5-戊二醇、1,6-己二醇、二乙二醇、二丙二醇、羥乙基苯二酚、氫醌雙(羥乙基)醚以及其混合物。更佳為該視需要的二元醇鏈延伸劑係選自乙二醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、2-甲基-1,3-丙二醇、1,4-丁二醇、新戊二醇、1,5-戊二醇、3-甲基-1,5-戊二醇、1,6-己二醇、二乙二醇、二丙二醇以及其混合物。最佳為該視需要的二元醇鏈延伸劑係選自
1,2-丁二醇、1,3-丁二醇、1,4-丁二醇以及其混合物。
本發明化學機械研磨墊之研磨層可提供為多孔性及非孔性(亦即,未填充的)的形態。該研磨層較佳為具有0.4至1.3g/cm3
之密度。多孔性研磨層更佳為具有0.5至1g/cm3
之密度。
本發明之研磨層視需要地進一步包含複數個微型元件。較佳為該複數個微型元件係均勻地分散遍及該研磨層。較佳為該複數個微型元件係選自陷入的氣泡、中空核的聚合性(polymeric)材料、經液體填充的中空核聚合性材料、水溶性材料以及不溶相的材料(例如:礦物油)。更佳為該複數個微型元件係選自均勻地分散遍及該研磨層之陷入的氣泡及中空核的聚合性材料。較佳為該複數個微型元件具有重量平均尺寸為2至100μ
m(15至90μ
m)。較佳為該複數個微型元件包含具有聚丙烯腈或聚丙烯腈共聚物(例如:自Akzo Nobel取得之ExpancelTM
)之殼壁之聚合性微氣球。
本發明之製造化學機械研磨墊之方法,係包含:(a)提供由多官能性異氰酸酯與預聚物多元醇反應而製備之具有4至12重量%未反應之NCO(以5至10重量%未反應之NCO基為佳;最佳為5至9重量%未反應之NCO基)之以異氰酸酯封端之氨酯預聚物;(b)提供多胺鏈延伸劑;(c)提供選自由(烷基)丙烯酸羥烷酯及(甲基)丙烯酸2-胺基乙酯所組成之群組之丙烯酸酯;(d)提供自由基起始劑;(e)混合該以異氰酸酯封端之氨酯預聚物及該丙烯酸酯;(f)添加多胺鏈延伸劑至(e)之混合物中;(g)添加自由基起始劑至(f)之組合中;以及(h)起始(g)之組合之聚合作用而形成研磨層。本發明之製造化學機械研磨墊之方法視需要地進一步包含:提供二元醇鏈延伸劑,於(a)製備以異氰酸酯封端之氨酯預聚物之期間
添加該二元醇鏈延伸劑,以及視需要地,在與(e)中之丙烯酸酯組合之前添加該二元醇鏈延伸劑至該以異氰酸酯封端之氨酯預聚物。
較佳為於本發明之製造化學機械研磨墊之方法中,起始(g)之組合之聚合作用視需要地包含:加熱(g)之組合或使(g)之組合受電磁能量作用。
較佳為於本發明之製造化學機械研磨墊的方法中,在起始(g)之組合之聚合作用之前,將(g)之組合移動至模具凹槽(例如:射出模具、壓縮模具、敞口模具)或移動至載膜。
於提供本發明化學機械研磨墊之方法中,其中所提供之丙烯酸酯為(甲基)丙烯酸2-胺基乙酯;較佳為所提供之丙烯酸酯為在該丙烯酸酯中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO)為0.1至0.9(較佳為0.2至0.8;更佳為0.3至0.7;最佳為0.4至0.6);以及較佳為所提供之該多胺鏈延伸劑為在該多胺鏈延伸劑中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO)為0.9至0.1(較佳為0.8至0.2;更佳為0.7至0.3;最佳為0.6至0.4)。
於提供本發明化學機械研磨墊之方法中,其中所提供的丙烯酸酯為(烷基)丙烯酸羥烷酯,較佳為所提供之該(烷基)丙烯酸羥烷酯為在該丙烯酸酯中之羥基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(OH/NCO)為0.1至0.9(較佳為0.2至0.8;更佳為0.3至0.7;最佳為0.4至0.6),以及較佳為所提供之多胺鏈延伸劑為在該多胺鏈延伸劑中之胺基與以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2
/NCO)為0.9至
0.1(較佳為0.8至0.2;更佳為0.7至0.3;最佳為0.6至0.4)。
於下列實施例中詳細描述本發明之某些實例。
藉由混合表1所示之以甲苯二異氰酸酯封端之預聚物(預熱至50℃)與4,4'-亞甲基-雙-鄰-氯苯胺(MBCA)(預熱至115℃),而製備比較例C1至C4之研磨層材料。所使用之預聚物與固化劑之比率係藉由記載於表1所示之預聚物中之未反應之NCO基與MBCA中之胺基之化學計量比而測定。於比較例C2及C4,通過添加來自Akzo-Nobel之以商標名稱Expancel®
販售之聚合性微氣球,而將孔隙引入至預聚物與MBCA之混合物中。所添加之Expancel®
孔隙形成劑之種類及重量%表示於表1。使用高速剪切混合機在大約3600rpm將Expancel®
孔隙形成劑與預聚物和MBCA之混合物組合,以使孔隙形成劑均勻地分散遍及該預聚物和MBCA之混合物中。接著,將該預聚物和MBCA(以及比較例C2及C4中之Expanccl均勻地孔隙形成劑)之最終混合物移至模具,並允許成膠約15分鐘。
接著,將該模具置於固化烘箱,並使用下列熱循環固化:固化烘箱的設定點溫度從周圍溫度至設定點為104℃(30分鐘升溫斜率);接著,設定點為104℃之固化烘箱的設定點溫度維持45分鐘;接著,固化烘箱的設定點溫度降至21℃,以及設定點溫度在21℃維持兩小時。
接著,將產物塊狀物脫模,並裁切以提供0.2cm厚之研磨層。
將具有5.8重量%未反應之NCO基(830.8g)之以甲苯二異氰酸酯封端之聚丙二醇預聚物(由Chemtura取得之Adiprene®
LFG 963A)及甲基丙烯酸2-羥乙酯(HEMA)(87.1g)加入至一加侖的容器中。接著,將二月桂酸二丁基錫(3g)加入至容器。接著,使用設定在1,000rpm之Vortex混合機將容器之內容物混合1.5分鐘。接著,將二乙基甲苯二胺鏈延伸劑(58.1g)(自Albemarle®
取得之Ethacure®
100-LC)加入至容器。接著,將2,2’-偶氮雙(2-甲基丙腈)(AIBN)(1g溶解於5mL丙酮)加入至容器。接著,使用設定在1,000rpm之Vortex混合機將容器之內容物混合1分鐘。接著,將容器之內容物傾入具有0.2 cm隔板之66 cm x 66 cm壓縮模具。接著,將經填充之模具置於熱壓板,並在120℃於壓力下固化1小時。接著,將該模具從該熱壓板移除,並且將該產物研磨層從該模具移除。
將具有8.9重量%未反應之NCO基(793.3g)之以甲苯二異氰酸
酯封端之聚(四亞甲基醚)二醇預聚物(自Chemtura取得之Adiprene®
LF 750D)與甲基丙烯酸2-羥乙酯(HEMA)(124g)加入至一加侖的容器。接著,將二月桂酸二丁基錫(3g)加入至容器。接著,使用設定在1,000rpm之Vortex混合機將容器之內容物混合1.5分鐘。接著,將二乙基甲苯二胺鏈延伸劑(82.7g)(自Albemarle®
取得之Ethacure®
100-LC)加入至容器。接著,將2,2’-偶氮雙(2-甲基丙腈)(AIBN)(1g溶解於5mL之丙酮)加入至容器。接著,使用設定在1,000rpm之Vortex混合機將容器之內容物混合1分鐘。接著,將容器之內容物傾入具有0.2 cm隔板之66 cm x 66 cm壓縮模具。接著,將經填充之模具置於熱壓板,並在120℃於壓力下固化1小時。接著,將該模具從該熱壓板移除,並將該研磨層從該模具移除。
測量於各實施例1及2以及於比較例C1至C4所製備之研磨層之多種性質,且其結果提供於表2,即:硬度(蕭氏D)、拉伸強度、斷裂延長率、拉伸模數、剛性、儲存模數G'、濕式切割速率、粗糙性磨損及水解安定性。
使用可由Instron獲得之具有D型數位表之Shore Leverloader,而根據ASTM D2240-05測量研磨層之硬度(以蕭氏D表)計。使用4kg荷重以15秒延遲而完成測量。
使用可從MTS Systems Corporation獲得之Alliance RT/5機械測試儀,而根據ASTM D1708-10測量當十字頭速度為2.54 cm/分鐘時研磨層之拉伸性質(亦即,拉伸模數、拉伸強度、斷裂延長率)。所有的測試在設定在23℃及相對濕度為50%之溫度及濕度受
到控制之實驗室中進行。在執行試驗前,所有的測試試樣於指定的實驗室條件下受調質5天。針對各研磨層材料公佈的拉伸模數(MPa)、拉伸強度(MPa)及斷裂延長率(%)的結果係由四重複試樣之應力-應變曲線而決定。
使用具有力矩夾具之TA儀器ARES流變儀,而根據ASTM D5279-08測量研磨層之儲存模數G'。將連接至儀器的液態氮用以控制低周圍溫度。該等試樣之線性黏彈性反應係以溫度斜率為3℃/分鐘從-100℃至200℃和測試頻率為1Hz測量。使用在Indusco液壓式懸吊臂切割機器上之47.5mm x 7mm模具,自產物研磨層壓印出測試試樣,並接著使用裁刀裁切成長度大約35mm。
使用6EC Strasbaugh研磨用具測量針對研磨層之濕式切割速率及粗糙性磨損數據。此研磨用具具有可容納20英吋(約51cm)直徑研磨層試樣尺寸之22英吋(約56cm)平台。在執行濕式切割速率及粗糙性磨損測試之前,使用皮帶式砂磨機磨光該研磨層試樣;切割成環形的墊;開溝出具有尺寸為120密耳(mil)節距、20 mil寬及20 mil深之環形溝槽圖案;以及接著積層至發泡狀次墊層(自Rohm and Haas Electronic Materials CMP Inc.取得之SP2310)。
針對該濕式切割速率測量,以研磨墊調質碟(由Kinik Company製造可從Rohm and Haas Electronic Materials CMP Inc.獲得之DiaGrid®
AD3BG-150855墊調質劑)摩擦該研磨層,其係使用下列參數,持續時間:使該研磨層受到來自鑽石調質碟之連續摩擦持續2小時期間;平台速度:100rpm;漿料:去離子水;漿流動速率:150 cm3
/分鐘;以及調質碟下壓力:62.1 kPa。濕式切割速率(亦即,平均溝槽深度隨著時間之變化)之測量(以μ
m/分鐘計)係使用
安裝於Zaber Technologies電動滑件上之MTI儀器Microtrack II雷射三角感測器,以從固定的研磨層之旋轉中心至該研磨層之最外層邊緣描繪出該研磨層之表面之輪廓。該感測器於該滑件上之掃瞄速度為0.732 mm/s,以及該感測器之取樣速率(測量數/掃瞄之毫米)為6.34點/mm。公佈的濕式切割速率之結果係以橫跨研磨層之表面取超過2,000點所收集到的厚度測量為基準計之溝槽深度隨著時間之算術平均減少率。
粗糙性磨損測量係使用與用於測量濕式切割速率相同的研磨層試樣,接著濕式切割速率測定而執行。此測試之目的係用於研究在模擬的晶圓研磨條件(亦即,研磨8英吋直徑之石英塊)且無後續的鑽石調質下,該研磨層材料之研光反應。使用的測試參數如下述,平台速度:53rpm;探頭速度:51rpm;下壓力:27.6 kPa(w/6.9 kPa背壓);漿料:ILD 3225(自Nitta-Haas,Inc.取得);漿料流動速率:150 cm3
/分鐘;持續時間:1分鐘、1分鐘、3分鐘及5分鐘,總共10分鐘。在光學表面分析之每一時間間隔自該研磨層切割出試樣,該光學表面分析係使用來自Veeco Instruments,Inc.running Vision,32版,軟體之Wyko NT8000 Optical Profiling System,用以測量該表面粗糙度相較於該初始材料之粗糙度之減少(於減少%)。
將試樣在室溫浸泡於去離子水24小時後,藉由測量各研磨層材料之試樣在線性尺度之變化(%),而決定該研磨層材料之水解安定性。
Claims (9)
- 一種包含研磨層之化學機械研磨墊,係用於研磨選自磁性基板、光學基板及半導體基板中之至少一種之基板,其中該研磨層包含原始材料成分之反應產物,該原始材料成分包含:(a)以異氰酸酯封端之氨酯預聚物,係由下列者之反應製備而得:(i)多官能性異氰酸酯,以及(ii)預聚物多元醇;其中,該以異氰酸酯封端之氨酯預聚物具有4至12重量%未反應之NCO基;(b)多胺鏈延伸劑;(c)(C1-8 烷基)丙烯酸羥基C1-8 烷酯;以及(d)自由基起始劑;其中,該研磨層顯示拉伸模數為65至500MPa;斷裂延長率為50至250%;儲存模數G'為25至200MPa;蕭氏D硬度為25至75;以及濕式切割速率為1至10μm/分鐘。
- 如申請專利範圍第1項所述之化學機械研磨墊,其中,該多官能性異氰酸酯係選自由脂肪族多官能性異氰酸酯、芳香族多官能性異氰酸酯及其混合物所組成之群組。
- 如申請專利範圍第1項所述之化學機械研磨墊,其中,該預聚物多元醇係選自由聚醚多元醇、聚碳酸酯多元醇、聚酯多元醇、聚己內酯多元醇、其共聚物以及其混合物所組成之群組。
- 如申請專利範圍第1項所述之化學機械研磨墊,其中,該多胺鏈延伸劑係選自由4,4’-亞甲基-雙-(2-氯苯胺)、4,4’-亞甲基- 雙-(3-氯-2,6-二乙基苯胺)、二乙基甲苯二胺、二甲基硫基甲苯二胺、4,4’-雙(第二丁基胺基)二苯基甲烷、3,3’-亞甲基-雙(6-胺基-1,1-二甲基酯)、1,3-丙二醇雙-(4-胺基苯甲酸酯)、4,4’-亞甲基-雙-(2,6-二乙基苯胺)、4,4’-亞甲基-雙-(2,6-二異丙基苯胺)、4,4’-亞甲基-雙-(2-異丙基-6-甲基苯胺)、2-[2-(2-胺基苯基)硫基乙基硫基]苯胺、4,4’-亞甲基-雙-(2-氯苯胺)、4,4-亞甲基雙(N-第二丁基苯胺)、三伸乙基二胺、以及其混合物所組成之群組。
- 如申請專利範圍第1項所述之化學機械研磨墊,其中,該原料材料成分復包含二元醇鏈延伸劑,其中該二元醇鏈延伸劑係選自由乙二醇、1,2-丙二醇、1,3-丙二醇、1,1,1-三羥甲基丙烷、1,2-丁二醇、1,4-丁二醇、1,3-丁二醇、2-甲基-1,3-丙二醇、新戊二醇、1,5-戊二醇、3-甲基-1,5-戊二醇、1,6-己二醇、二乙二醇、二丙二醇、羥乙基苯二酚、氫醌雙(羥乙基)醚、以及其混合物所組成之群組。
- 如申請專利範圍第1項所述之化學機械研磨墊,其中該(C1-8 烷基)丙烯酸羥基C1-8 烷酯中之羥基與該以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(OH/NCO)為0.1至0.9;以及其中該多胺鏈延伸劑中之胺基與該以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2 /NCO)為0.9至0.1。
- 如申請專利範圍第1項所述之化學機械研磨墊,其中,該(C1-8 烷基)丙烯酸羥基C1-8 烷酯為(甲基)丙烯酸2-胺基乙酯;以及其中該(C1-8 烷基)丙烯酸羥基C1-8 烷酯中之胺基與該以異氰酸酯 封端之氨酯預聚物中之未反應之NCO基之當量比(NH2 /NCO)為0.1至0.9;以及,其中該多胺鏈延伸劑中之胺基與該以異氰酸酯封端之氨酯預聚物中之未反應之NCO基之當量比(NH2 /NCO)為0.9至0.1。
- 一種製造如申請專利範圍第1項所述之研磨層之方法,包含:(a)提供由多官能性異氰酸酯與預聚物多元醇之反應所製備之具有4至12重量%未反應之NCO之以異氰酸酯封端之氨酯預聚物;(b)提供多胺鏈延伸劑;(c)提供(C1-8 烷基)丙烯酸羥基C1-8 烷酯;(d)提供自由基起始劑;(e)混合該以異氰酸酯封端之氨酯預聚物及該(C1-8 烷基)丙烯酸羥基C1-8 烷酯;(f)添加該多胺鏈延伸劑至(e)之組合中;(g)添加該自由基起始劑至(f)之組合中;以及(h)起始(g)之組合之聚合作用,以形成研磨層。
- 一種研磨基板之方法,係包含:提供選自磁性基板、光學基板及半導體基板中之至少一種之基板;提供如申請專利範圍第1項所述之化學機械研磨墊;產生於該研磨層之研磨表面與該基板間之動態接觸,以研磨該基板之表面;以及以研磨性調質劑調質該研磨表面。
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