JP2018202604A - 改善された除去速度および研磨均一性のためのオフセット周方向溝を有するケミカルメカニカル研磨パッド - Google Patents
改善された除去速度および研磨均一性のためのオフセット周方向溝を有するケミカルメカニカル研磨パッド Download PDFInfo
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- JP2018202604A JP2018202604A JP2018098459A JP2018098459A JP2018202604A JP 2018202604 A JP2018202604 A JP 2018202604A JP 2018098459 A JP2018098459 A JP 2018098459A JP 2018098459 A JP2018098459 A JP 2018098459A JP 2018202604 A JP2018202604 A JP 2018202604A
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- polishing
- offset
- polishing layer
- geometric center
- circumferential grooves
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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Abstract
Description
1.本発明に従って、半導体、光学および磁性基材の少なくとも一つを平坦化するためのケミカルメカニカル(CMP)研磨パッドは、幾何学的中心を有する研磨層、好ましくは円形研磨層を含み、研磨層が共通の幾何学的中心ではない複数の幾何学的中心を有する複数のオフセット周方向溝を含み、各周方向溝がその最も近いまたは隣接した一つの周方向溝または複数の周方向溝からピッチ距離をあけて分離される。
Claims (10)
- 半導体、光学および磁性基材の少なくとも一つを平坦化するためのケミカルメカニカル(CMP)研磨パッドであって、:
幾何学的中心を有する研磨層を含み、研磨層が共通の幾何学的中心ではない複数の幾何学的中心を有する複数のオフセット周方向溝を含み、各周方向溝がその最も近いまたは隣接した一つの周方向溝または複数の周方向溝からピッチ距離をあけて分離される、CMP研磨パッド。 - 研磨層が完全で途切れておらず研磨層自体と同心であるまたは共通の幾何学的中心を有し、研磨層の幾何学的中心からオフセットしていない最外周方向溝を含む、請求項1記載のCMP研磨パッド。
- 複数のオフセット周方向溝を有する研磨層において、最内周方向溝から最外周方向溝へ進むとき、各連続するオフセット周方向溝の幾何学的中心の相対的な場所が研磨層の幾何学的中心に向かって移動し、研磨層の最外周方向溝が研磨層の幾何学的中心と実質的に一致する幾何学的中心を有する、請求項1記載のCMP研磨パッド。
- 最内および最外周方向溝を除く複数のオフセット周方向溝の各々が二つの隣接した周方向溝を有し、二つの隣接した周方向溝を有するオフセット周方向溝の大半の幾何学的中心がそれらのそれぞれの二つの隣接した周方向溝の幾何学的中心からオフセットした、請求項1記載のCMP研磨パッド。
- 二つの隣接した周方向溝を有するオフセット周方向溝の大半がそれらのそれぞれの二つの隣接した周方向溝から25〜200μm(1〜8ミル)オフセットした、請求項4記載のCMP研磨パッド。
- オフセット周方向溝の大半が研磨層の幾何学的中心から200〜35,000μmオフセットした、請求項1記載のCMP研磨パッド。
- オフセット周方向溝の大半が研磨層の幾何学的中心から500〜21,500μmオフセットした、請求項1記載のCMP研磨パッド。
- 最外周方向溝を除く全てのオフセット周方向溝が研磨層の幾何学的中心から500〜21,500μmオフセットした、請求項7記載のCMP研磨パッド。
- 研磨パッドの周方向溝の各々が3〜36辺を有する多角形である、または実質的に円形である、請求項1記載のCMP研磨パッド。
- 研磨層が複数の放射状溝を含む、請求項1記載のCMP研磨パッド。
Applications Claiming Priority (2)
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US15/617,263 US10625393B2 (en) | 2017-06-08 | 2017-06-08 | Chemical mechanical polishing pads having offset circumferential grooves for improved removal rate and polishing uniformity |
US15/617,263 | 2017-06-08 |
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JP2018202604A true JP2018202604A (ja) | 2018-12-27 |
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JP (1) | JP7201338B2 (ja) |
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WO2020203639A1 (ja) * | 2019-04-03 | 2020-10-08 | 株式会社クラレ | 研磨パッド |
KR20210116759A (ko) | 2020-03-13 | 2021-09-28 | 삼성전자주식회사 | Cmp 패드 및 이를 구비하는 화학적 기계적 연마 장치 |
US20230390970A1 (en) * | 2022-06-02 | 2023-12-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making low specific gravity polishing pads |
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JP2001054856A (ja) * | 1999-07-09 | 2001-02-27 | Applied Materials Inc | 化学的機械研磨装置での使用のための溝付パターンを有する研磨パッド |
JP2004009156A (ja) * | 2002-06-03 | 2004-01-15 | Jsr Corp | 研磨パッド及び複層型研磨パッド |
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TWI250572B (en) * | 2002-06-03 | 2006-03-01 | Jsr Corp | Polishing pad and multi-layer polishing pad |
JP2005183785A (ja) * | 2003-12-22 | 2005-07-07 | Toyo Tire & Rubber Co Ltd | 研磨パッド及び半導体デバイスの製造方法 |
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KR101279819B1 (ko) | 2005-04-12 | 2013-06-28 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 방사-편향 연마 패드 |
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US9211628B2 (en) * | 2011-01-26 | 2015-12-15 | Nexplanar Corporation | Polishing pad with concentric or approximately concentric polygon groove pattern |
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JP2001054856A (ja) * | 1999-07-09 | 2001-02-27 | Applied Materials Inc | 化学的機械研磨装置での使用のための溝付パターンを有する研磨パッド |
JP2004009156A (ja) * | 2002-06-03 | 2004-01-15 | Jsr Corp | 研磨パッド及び複層型研磨パッド |
JP2016533908A (ja) * | 2013-10-18 | 2016-11-04 | キャボット マイクロエレクトロニクス コーポレイション | オフセットした同心の溝のパターンの端部除外領域を有するcmp研磨パッド |
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TWI771417B (zh) | 2022-07-21 |
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US10625393B2 (en) | 2020-04-21 |
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