TWI472009B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

Info

Publication number
TWI472009B
TWI472009B TW98118565A TW98118565A TWI472009B TW I472009 B TWI472009 B TW I472009B TW 98118565 A TW98118565 A TW 98118565A TW 98118565 A TW98118565 A TW 98118565A TW I472009 B TWI472009 B TW I472009B
Authority
TW
Taiwan
Prior art keywords
organic resin
resin layer
layer
conductor
forming
Prior art date
Application number
TW98118565A
Other languages
English (en)
Chinese (zh)
Other versions
TW201013884A (en
Inventor
千田章裕
永田貴章
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201013884A publication Critical patent/TW201013884A/zh
Application granted granted Critical
Publication of TWI472009B publication Critical patent/TWI472009B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/699—Insulating or insulated package substrates; Interposers; Redistribution layers for flat cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
TW98118565A 2008-06-06 2009-06-04 半導體裝置及其製造方法 TWI472009B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008149535 2008-06-06

Publications (2)

Publication Number Publication Date
TW201013884A TW201013884A (en) 2010-04-01
TWI472009B true TWI472009B (zh) 2015-02-01

Family

ID=40933697

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98118565A TWI472009B (zh) 2008-06-06 2009-06-04 半導體裝置及其製造方法

Country Status (4)

Country Link
US (1) US7888163B2 (enExample)
EP (1) EP2131394A1 (enExample)
JP (3) JP5248412B2 (enExample)
TW (1) TWI472009B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2009148001A1 (en) * 2008-06-06 2009-12-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8053253B2 (en) 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2010041045A (ja) 2008-07-09 2010-02-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010035627A1 (en) 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5583951B2 (ja) * 2008-11-11 2014-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI517268B (zh) * 2009-08-07 2016-01-11 半導體能源研究所股份有限公司 端子構造的製造方法和電子裝置的製造方法
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
US9105701B2 (en) * 2013-06-10 2015-08-11 Micron Technology, Inc. Semiconductor devices having compact footprints
US10529641B2 (en) * 2016-11-26 2020-01-07 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure over interconnect region
US10811334B2 (en) * 2016-11-26 2020-10-20 Texas Instruments Incorporated Integrated circuit nanoparticle thermal routing structure in interconnect region

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030038280A1 (en) * 2001-08-24 2003-02-27 Hiroki Kojo Thermosetting electroconductive paste for electroconductive bump use
US20050162578A1 (en) * 1995-02-16 2005-07-28 Shunpei Yamazaki Method of manufacturing a semiconductor device
US20070004125A1 (en) * 2005-06-30 2007-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070023758A1 (en) * 2005-07-29 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070181875A1 (en) * 2006-02-08 2007-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20080093464A1 (en) * 2004-08-23 2008-04-24 C/O Semiconductor Energy Laboratory Co., Ltd. Wireless Chip And Manufacturing Method Thereof

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990008802A1 (fr) 1989-01-25 1990-08-09 Asahi Kasei Kogyo Kabushiki Kaisha Nouveaux materiaux composites constitues de preimpregnes et de produits moules composites, et production de produits moules composites
DE3907757A1 (de) 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH0585092A (ja) * 1991-09-27 1993-04-06 Sony Corp 半導体装置
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JP3428070B2 (ja) * 1993-06-07 2003-07-22 株式会社東芝 印刷配線板の製造方法
TW371285B (en) 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JPH1092980A (ja) * 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
JPH10198778A (ja) 1997-01-14 1998-07-31 Rohm Co Ltd Ｉｃカード
JPH10302037A (ja) * 1997-04-23 1998-11-13 Nippon Dry Chem Co Ltd Ｉｄタグ
JP3500908B2 (ja) 1997-04-28 2004-02-23 松下電器産業株式会社 カードリーダ
JPH11317475A (ja) 1998-02-27 1999-11-16 Canon Inc 半導体用封止材樹脂および半導体素子
TW484101B (en) 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP2000231619A (ja) 1999-02-10 2000-08-22 Nippon Telegr & Teleph Corp <Ntt> 接触型ｉｃカード
US6224965B1 (en) 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP4423779B2 (ja) 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
JP4347496B2 (ja) 2000-03-31 2009-10-21 共同印刷株式会社 可逆性感熱記録媒体の製造方法
JP4802398B2 (ja) * 2001-06-08 2011-10-26 凸版印刷株式会社 非接触ｉｃカード
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100430001B1 (ko) 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
JP2003261745A (ja) * 2002-03-11 2003-09-19 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
EP1514307A1 (en) 2002-06-19 2005-03-16 Sten Bjorsell Electronics circuit manufacture
US7485489B2 (en) 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
US7132311B2 (en) 2002-07-26 2006-11-07 Intel Corporation Encapsulation of a stack of semiconductor dice
JP4012025B2 (ja) 2002-09-24 2007-11-21 大日本印刷株式会社 微小構造体付きフィルムの製造方法と微小構造体付きフィルム
JP3741216B2 (ja) * 2003-03-03 2006-02-01 セイコーエプソン株式会社 配線基板の製造方法
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Ｉｃタグ
JP3982479B2 (ja) * 2003-10-28 2007-09-26 松下電工株式会社 電気部品内蔵回路板及びその製造方法
CN100461411C (zh) 2004-01-30 2009-02-11 株式会社半导体能源研究所 半导体器件
EP1589797A3 (en) 2004-04-19 2008-07-30 Matsushita Electric Industrial Co., Ltd. Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
KR101226260B1 (ko) 2004-06-02 2013-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7591863B2 (en) 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
JP4611766B2 (ja) * 2005-02-16 2011-01-12 トッパン・フォームズ株式会社 非接触型データ受送信体
US7342490B2 (en) 2004-11-23 2008-03-11 Alien Technology Corporation Radio frequency identification static discharge protection
JP2007043121A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2007016642A2 (en) 2005-07-29 2007-02-08 Foster-Miller, Inc. Dual function composite system and method of making same
JP2007059821A (ja) 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
JP4251185B2 (ja) 2006-01-23 2009-04-08 ソニー株式会社 半導体集積回路カードの製造方法
JP2007241999A (ja) 2006-02-08 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
TWI431726B (zh) 2006-06-01 2014-03-21 半導體能源研究所股份有限公司 非揮發性半導體記憶體裝置
EP2038818B1 (en) 2006-06-26 2014-10-15 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1976001A3 (en) * 2007-03-26 2012-08-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4833904B2 (ja) * 2007-04-12 2011-12-07 富士通株式会社 Ｒｆｉｄタグホルダ
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162578A1 (en) * 1995-02-16 2005-07-28 Shunpei Yamazaki Method of manufacturing a semiconductor device
US20030038280A1 (en) * 2001-08-24 2003-02-27 Hiroki Kojo Thermosetting electroconductive paste for electroconductive bump use
US20080093464A1 (en) * 2004-08-23 2008-04-24 C/O Semiconductor Energy Laboratory Co., Ltd. Wireless Chip And Manufacturing Method Thereof
US20070004125A1 (en) * 2005-06-30 2007-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070023758A1 (en) * 2005-07-29 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070181875A1 (en) * 2006-02-08 2007-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
EP2131394A1 (en) 2009-12-09
JP5675939B2 (ja) 2015-02-25
JP2014112678A (ja) 2014-06-19
JP5248412B2 (ja) 2013-07-31
TW201013884A (en) 2010-04-01
JP2010015550A (ja) 2010-01-21
US7888163B2 (en) 2011-02-15
US20090302455A1 (en) 2009-12-10
JP2013229023A (ja) 2013-11-07
JP5427308B2 (ja) 2014-02-26

Similar Documents

Publication Publication Date Title
JP5464914B2 (ja) 半導体装置の作製方法
US7888163B2 (en) Semiconductor device and method for manufacturing the same
US8053253B2 (en) Method for manufacturing semiconductor device
JP5380156B2 (ja) 半導体装置
JP5779272B2 (ja) 半導体装置
JP5514925B2 (ja) 半導体装置
JP5268459B2 (ja) 半導体装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees