TWI471337B - Manufacture of polymers for semiconductor micrographs - Google Patents

Manufacture of polymers for semiconductor micrographs Download PDF

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Publication number
TWI471337B
TWI471337B TW96149582A TW96149582A TWI471337B TW I471337 B TWI471337 B TW I471337B TW 96149582 A TW96149582 A TW 96149582A TW 96149582 A TW96149582 A TW 96149582A TW I471337 B TWI471337 B TW I471337B
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TW
Taiwan
Prior art keywords
group
monomer
polymer
formula
hydrocarbon group
Prior art date
Application number
TW96149582A
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English (en)
Chinese (zh)
Other versions
TW200838878A (en
Inventor
山岸孝則
加藤一郎
山口賢志
大崎功三
柴田康夫
間柄勳
大森秀樹
井內謙輔
Original Assignee
丸善石油化學股份有限公司
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Application filed by 丸善石油化學股份有限公司 filed Critical 丸善石油化學股份有限公司
Publication of TW200838878A publication Critical patent/TW200838878A/zh
Application granted granted Critical
Publication of TWI471337B publication Critical patent/TWI471337B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/01—Processes of polymerisation characterised by special features of the polymerisation apparatus used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
TW96149582A 2006-12-22 2007-12-21 Manufacture of polymers for semiconductor micrographs TWI471337B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006346454 2006-12-22

Publications (2)

Publication Number Publication Date
TW200838878A TW200838878A (en) 2008-10-01
TWI471337B true TWI471337B (zh) 2015-02-01

Family

ID=39562205

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96149582A TWI471337B (zh) 2006-12-22 2007-12-21 Manufacture of polymers for semiconductor micrographs

Country Status (5)

Country Link
US (1) US8030419B2 (https=)
JP (1) JP5308660B2 (https=)
KR (1) KR101446819B1 (https=)
TW (1) TWI471337B (https=)
WO (1) WO2008078410A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5631550B2 (ja) * 2009-02-27 2014-11-26 丸善石油化学株式会社 フォトレジスト用共重合体の製造方法
JP2011026372A (ja) * 2009-07-21 2011-02-10 Maruzen Petrochem Co Ltd 有機反射防止膜用共重合体の製造方法
TWI648270B (zh) * 2014-01-31 2019-01-21 日商三菱瓦斯化學股份有限公司 （甲基）丙烯酸酯化合物、（甲基）丙烯酸共聚物及包含此之感光性樹脂組成物
CN114682182A (zh) * 2020-12-28 2022-07-01 中昊晨光化工研究院有限公司 一种用于气相法生产聚合物的装置系统和方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1294622A (zh) * 1998-02-27 2001-05-09 三菱丽阳株式会社 原油处理装置及原油处理方法
JP2004269855A (ja) * 2003-02-20 2004-09-30 Maruzen Petrochem Co Ltd レジストポリマー及びその製造方法
US20060257784A1 (en) * 2005-05-10 2006-11-16 Takanori Yamagishi Copolymer for semiconductor lithography and process for production thereof

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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS60164200A (ja) 1984-02-03 1985-08-27 日本セメント株式会社 Ａν−ｆｏ爆薬による低振動、低騒音破砕方法
JPS60164200U (ja) * 1984-04-11 1985-10-31 帝人化成株式会社 調圧液封装置
US4603101A (en) * 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
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JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
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JP4164942B2 (ja) 1998-05-29 2008-10-15 Ｊｓｒ株式会社 アクリル系共重合体およびそれを含有する反射防止膜形成組成物並びにレジスト膜の形成方法
JP3042618B2 (ja) 1998-07-03 2000-05-15 日本電気株式会社 ラクトン構造を有する（メタ）アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法
JP2000313779A (ja) 1999-04-30 2000-11-14 Jsr Corp 反射防止膜形成組成物
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* Cited by examiner, † Cited by third party
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CN1294622A (zh) * 1998-02-27 2001-05-09 三菱丽阳株式会社 原油处理装置及原油处理方法
JP2004269855A (ja) * 2003-02-20 2004-09-30 Maruzen Petrochem Co Ltd レジストポリマー及びその製造方法
US20060257784A1 (en) * 2005-05-10 2006-11-16 Takanori Yamagishi Copolymer for semiconductor lithography and process for production thereof

Also Published As

Publication number Publication date
JP2008174741A (ja) 2008-07-31
US8030419B2 (en) 2011-10-04
US20100048848A1 (en) 2010-02-25
JP5308660B2 (ja) 2013-10-09
KR20090107022A (ko) 2009-10-12
WO2008078410A1 (ja) 2008-07-03
KR101446819B1 (ko) 2014-10-01
TW200838878A (en) 2008-10-01

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