TWI457042B - 具有潛伏致動層之有機發光裝置 - Google Patents
具有潛伏致動層之有機發光裝置 Download PDFInfo
- Publication number
- TWI457042B TWI457042B TW96126063A TW96126063A TWI457042B TW I457042 B TWI457042 B TW I457042B TW 96126063 A TW96126063 A TW 96126063A TW 96126063 A TW96126063 A TW 96126063A TW I457042 B TWI457042 B TW I457042B
- Authority
- TW
- Taiwan
- Prior art keywords
- strontium
- barium
- cesium
- metal precursor
- metal
- Prior art date
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- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 39
- 229910052712 strontium Inorganic materials 0.000 claims 38
- 229910052751 metal Inorganic materials 0.000 claims 24
- 239000002184 metal Substances 0.000 claims 24
- 229910052788 barium Inorganic materials 0.000 claims 20
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims 20
- 239000002243 precursor Substances 0.000 claims 16
- 239000010410 layer Substances 0.000 claims 14
- 229910052792 caesium Inorganic materials 0.000 claims 12
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 12
- 238000000034 method Methods 0.000 claims 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 5
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 5
- 229910052791 calcium Inorganic materials 0.000 claims 5
- 239000011575 calcium Substances 0.000 claims 5
- 229910052744 lithium Inorganic materials 0.000 claims 5
- 229910052749 magnesium Inorganic materials 0.000 claims 5
- 239000011777 magnesium Substances 0.000 claims 5
- 229910052700 potassium Inorganic materials 0.000 claims 5
- 239000011591 potassium Substances 0.000 claims 5
- 229910052705 radium Inorganic materials 0.000 claims 5
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 claims 5
- 229910052701 rubidium Inorganic materials 0.000 claims 5
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims 5
- 229910052708 sodium Inorganic materials 0.000 claims 5
- 239000011734 sodium Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- DGLZERCEMMIRSA-UHFFFAOYSA-N triazidobismuthane Chemical compound [N-]=[N+]=N[Bi](N=[N+]=[N-])N=[N+]=[N-] DGLZERCEMMIRSA-UHFFFAOYSA-N 0.000 claims 5
- 239000000463 material Substances 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 150000001540 azides Chemical class 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000012044 organic layer Substances 0.000 claims 1
- 229910052704 radon Inorganic materials 0.000 claims 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Claims (19)
- 一種有機發光裝置,其具有包含至少一種金屬先質之反應產物之陰極層,當曝露至熱或光時,該金屬先質能夠釋出至少一種低功函數金屬,其中該金屬先質係包括式M(N3 )x 化合物,其中M係選自由鋰、鈉、鉀、銣、銫、鉣、鈹、鎂、鈣、鍶、鋇、鐳、鑭、鈰、鐠、釹、鉅、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鎦及其組合所構成群組;且x為1至3。
- 如請求項1之有機發光裝置,其中該至少一種低功函數金屬係具有功函數值小於3.0eV。
- 如請求項1之有機發光裝置,其中該至少一種低功函數金屬係選自包括鋰、鈉、鉀、銣、銫、鉣、鈹、鎂、鈣、鍶、鋇、鐳、鑭、鈰、鐠、釹、鉅、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鎦及其組合。
- 如請求項1之有機發光裝置,其中低功函數金屬為鋇。
- 如請求項1之有機發光裝置,其中金屬先質係包括雙疊氮化鋇。
- 一種有機發光裝置,其包含:基板,至少一個陰極層,覆蓋該基板一個表面之至少一部份,此陰極層包含得自使至少一種式M(N3 )x 金屬先質分解之反應產物;陽極層材料,覆蓋第二個基板之至少一部份,及; 有機發光材料,位於陰極層與陽極層之間,而其中當相反電荷被施加至陽極與陰極層時,光係被發射;其中M係選自包括鋰、鈉、鉀、銣、銫、鉣、鈹、鎂、鈣、鍶、鋇、鐳、鑭、鈰、鐠、釹、鉅、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鎦及其組合;且x為1至3。
- 如請求項6之有機發光裝置,其中陰極層材料係包括鋇。
- 如請求項6之有機發光裝置,其中金屬先質為雙疊氮化鋇。
- 一種製造有機發光裝置之方法,該方法包括在大氣空氣中,對基板施加至少一種金屬先質之溶液,其包含至少一種金屬之疊氮化物,M(N3 )x ,且使該至少一種金屬先質曝露至熱或光,以釋出該至少一種金屬;其中M係選自包括鋰、鈉、鉀、銣、銫、鉣、鈹、鎂、鈣、鍶、鋇、鐳、鑭、鈰、鐠、釹、鉅、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鎦及其組合;且x具有數值1至3。
- 如請求項9之方法,其中該至少一種金屬先質為雙疊氮化鋇。
- 一種製造有機發光二極體之方法,其包括以下步驟:提供至少一種金屬先質,其能夠轉變成經沉積之含金屬層,其中該至少一種金屬先質係包括式M(N3 )x 化合物,其中M係選自由鋰、鈉、鉀、銣、銫、鉣、鈹、鎂、 鈣、鍶、鋇、鐳、鑭、鈰、鐠、釹、鉅、釤、銪、釓、鋱、鏑、鈥、鉺、銩、鐿、鎦及其組合所構成群組;且x具有數值1至3;在基板頂上形成包含該至少一種金屬先質之層;使先質層轉化,以形成經沉積之含金屬陰極;將發光有機層與陰極合併,及將陽極與陰極及發光層合併,該發光層係被定位於陰極與陽極之間。
- 如請求項11之方法,其中該至少一種金屬先質為金屬疊氮化物。
- 如請求項11之方法,其中該至少一種金屬先質為雙疊氮化鋇。
- 如請求項11之方法,其中轉化係使用能量來源達成,選自包括光、熱、電子束照射、離子束照射及其混合。
- 如請求項11之方法,其中該至少一種金屬先質係以流體施用。
- 如請求項11之方法,其中陰極具有功函數值小於3.0eV。
- 一種光面板,其包含如請求項1之裝置。
- 如請求項17之光面板,其中陰極層材料係包括鋇。
- 如請求項17之光面板,其中該至少一種金屬先質係包括雙疊氮化鋇。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/536,228 US20070075628A1 (en) | 2005-10-04 | 2006-09-28 | Organic light emitting devices having latent activated layers |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200822798A TW200822798A (en) | 2008-05-16 |
TWI457042B true TWI457042B (zh) | 2014-10-11 |
Family
ID=39683706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96126063A TWI457042B (zh) | 2006-09-28 | 2007-07-17 | 具有潛伏致動層之有機發光裝置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070075628A1 (zh) |
EP (1) | EP2067192A2 (zh) |
JP (1) | JP5663165B2 (zh) |
KR (1) | KR101434867B1 (zh) |
CN (1) | CN101517772B (zh) |
TW (1) | TWI457042B (zh) |
WO (1) | WO2008094294A2 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040031167A1 (en) * | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US8709705B2 (en) | 2004-12-13 | 2014-04-29 | Pryog, Llc | Metal-containing compositions and method of making same |
US7534635B1 (en) | 2008-03-24 | 2009-05-19 | General Electric Company | Getter precursors for hermetically sealed packaging |
US8350144B2 (en) | 2008-05-23 | 2013-01-08 | Swaminathan Ramesh | Hybrid photovoltaic cell module |
KR101420327B1 (ko) * | 2008-07-24 | 2014-08-14 | 삼성디스플레이 주식회사 | 유기 발광 소자의 제조 방법 및 유기 발광 소자 |
EP2326744B1 (en) * | 2008-08-07 | 2022-06-01 | Pryog, LLC | Metal compositions and methods of making same |
US20110008525A1 (en) * | 2009-07-10 | 2011-01-13 | General Electric Company | Condensation and curing of materials within a coating system |
TWI508618B (zh) * | 2009-12-28 | 2015-11-11 | Univ Nat Chiao Tung | 製備有機發光二極體之方法及其裝置 |
JP6035706B2 (ja) * | 2010-04-09 | 2016-11-30 | 三菱化学株式会社 | 有機電界素子用組成物の製造方法、有機電界素子用組成物、有機電界発光素子の製造方法、有機電界発光素子、有機el表示装置および有機el照明 |
KR102465065B1 (ko) | 2015-09-29 | 2022-11-09 | 프라이요그, 엘엘씨 | 금속 조성물 및 이의 제조 방법 |
KR20210143789A (ko) | 2019-03-25 | 2021-11-29 | 시노비아 테크놀로지스 | 비평형 열경화 공정 |
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JPS5787042A (en) * | 1980-11-19 | 1982-05-31 | Hitachi Ltd | Manufacture of gas discharge panel |
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2006
- 2006-09-28 US US11/536,228 patent/US20070075628A1/en not_active Abandoned
-
2007
- 2007-07-05 WO PCT/US2007/072847 patent/WO2008094294A2/en active Application Filing
- 2007-07-05 CN CN2007800355666A patent/CN101517772B/zh not_active Expired - Fee Related
- 2007-07-05 EP EP07872690A patent/EP2067192A2/en not_active Withdrawn
- 2007-07-05 KR KR1020097006238A patent/KR101434867B1/ko active IP Right Grant
- 2007-07-05 JP JP2009530489A patent/JP5663165B2/ja not_active Expired - Fee Related
- 2007-07-17 TW TW96126063A patent/TWI457042B/zh not_active IP Right Cessation
Patent Citations (4)
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US6703180B1 (en) * | 2003-04-16 | 2004-03-09 | Eastman Kodak Company | Forming an improved stability emissive layer from a donor element in an OLED device |
US20060081840A1 (en) * | 2004-10-20 | 2006-04-20 | Toshitaka Mori | Organic electronic device and method for producing the same |
Also Published As
Publication number | Publication date |
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CN101517772B (zh) | 2012-07-18 |
CN101517772A (zh) | 2009-08-26 |
KR20090071573A (ko) | 2009-07-01 |
WO2008094294A2 (en) | 2008-08-07 |
TW200822798A (en) | 2008-05-16 |
US20070075628A1 (en) | 2007-04-05 |
JP2010505236A (ja) | 2010-02-18 |
JP5663165B2 (ja) | 2015-02-04 |
WO2008094294A3 (en) | 2009-02-19 |
EP2067192A2 (en) | 2009-06-10 |
KR101434867B1 (ko) | 2014-09-02 |
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