JP2013537362A - オプトエレクトロニクス半導体チップ上に変換材を被着する方法、および、オプトエレクトロニクス素子 - Google Patents
オプトエレクトロニクス半導体チップ上に変換材を被着する方法、および、オプトエレクトロニクス素子 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
Abstract
Description
・放射主面を有するオプトエレクトロニクス半導体チップを準備するステップ
・変換材を準備し、当該変換材を支持体の支持体主面に設けるステップ
・前記変換材が前記放射主面の側に来るように、かつ、当該放射主面との間に0を上回る間隔を空けるように、当該変換材を配置するステップ
・前記支持体を透過するパルス状のレーザ光を、前記変換材の吸収材成分に、および/または、前記変換材と前記支持体との間にある剥離膜に照射して、当該吸収材成分または剥離膜を加熱することにより、前記変換材を前記支持体から剥離して前記放射主面に被着するステップ。
Claims (14)
- オプトエレクトロニクス素子(2)上に変換材(3)を設ける方法であって、
・放射主面(20)を有する前記オプトエレクトロニクス半導体チップ(2)を準備するステップと、
・前記変換材(3)を準備し、当該変換材(3)を支持体(4)の支持体主面(40)に設けるステップと、
・前記変換材(3)が前記放射主面(20)の側に来るように、かつ、当該放射主面(20)との間に間隔(D)を空けるように、当該変換材(3)を配置するステップと、
・前記支持体(4)を透過するパルス状のレーザ光(6)を、前記変換材(3)の吸収材成分(36)に、および/または、前記変換材(3)と前記支持体(4)との間にある剥離膜(5)に照射して、当該吸収材成分(36)または剥離膜(5)を加熱することにより、前記変換材(3)を前記支持体(4)から剥離して前記放射主面(20)に被着するステップと
を有することを特徴とする方法。 - 前記変換材(4)は、母材としてシリコーンを含み、
前記シリコーンは不完全に架橋および/または硬化された状態で前記支持体(4)に設けられ、前記半導体チップ(2)上に被着した後に初めて完全に硬化および/または架橋される、
請求項1記載の方法。 - 前記変換材(3)を順次、複数の連続する層(7)を成すように前記半導体チップ(2)上に被着し、
前記複数の層(7)のうち少なくとも1つを被着した後、前記半導体チップ(2)と、前記半導体チップ(2)上にすでに被着した前記変換材(3)とによって放出される放射の色座標を求め、
前記色座標に依存して、前記変換材(3)のさらに別の層(7)を前記半導体チップ(2)上に被着する、
請求項1または2記載の方法。 - 前記変換材(3)の剥離時に、前記剥離膜(5)の剥離材料(56)の少なくとも一部を前記レーザ光(6)によって気相に移行させ、前記剥離材料(56)の少なくとも一部を前記半導体チップ(2)上の前記変換材(3)上に堆積させるか、または当該半導体チップ(2)上の前記変換材(3)中に侵入させる、
請求項1から3までのいずれか1項記載の方法。 - 前記レーザ光(6)は最大410nmの波長を有し、
前記剥離膜(5)、前記変換材(3)、または、当該変換材(3)の少なくとも前記吸収体成分(36)は、前記レーザ光(6)の波長を吸収する作用を有する、
請求項1から4までのいずれか1項記載の方法。 - 前記剥離膜(5)はプラスチックを含むか、またはプラスチックから成り、
前記剥離膜(5)の厚さは10nm〜75nmであり、
前記レーザ光(6)に対する前記剥離膜(5)の光学密度は少なくとも0.5である、
請求項1から5までのいずれか1項記載の方法。 - 前記支持体主面(40)を上から見た場合、前記レーザ光(6)が照射される領域は線状であり、
前記変換材(3)を列ごとに、前記放射主面(20)上に被着する、
請求項1から6までのいずれか1項記載の方法。 - ・放射主面(20)を有するオプトエレクトロニクス半導体チップ(2)と、
・前記放射主面(20)上に、相互に少なくとも部分的に重なり合う少なくとも2つの連続する同様の層(7)を成すように被着された変換材(3)と、
・前記半導体チップ(2)の動作時に生成された放射を吸収する作用を有さない、前記変換材(3)に含まれた添加成分(36,56)と
を備えたオプトエレクトロニクス素子(1)であって、
前記放射主面(20)から離れていく方向で見て、各2つの相互に隣接する前記層(7)の境界領域(70)では、前記添加成分(36,56)の各濃度は、前記層(7)の中心領域(75)と比較して変化している
ことを特徴とする、オプトエレクトロニクス素子(1)。 - 各層(7)の厚さ(T7)は1μm〜10μmであり、
前記変換材(3)全体の厚さ(T3)は、15μm〜200μmである、
請求項8記載のオプトエレクトロニクス素子(1)。 - 前記境界領域(70)の厚さ(T6)は10nm〜250nmである、
請求項8または9記載のオプトエレクトロニクス素子(1)。 - 前記境界領域(70)における前記添加成分(36,56)の平均濃度は、前記中心領域(75)より高くされている、
請求項8から10までのいずれか1項記載のオプトエレクトロニクス素子(1)。 - 前記添加成分(36)は少なくとも、前記層(7)の中心領域(75)に含まれており、かつ、各中心領域(75)において均質に分布しており、
前記添加成分(36)は、動作中の前記半導体チップ(2)によって生成される放射の波長の変化の点で、変換物質と異なる、
請求項8から11までのいずれか1項記載のオプトエレクトロニクス素子(1)。 - 横方向と、前記放射主面(20)に対して垂直な方向とにおいて、前記層(7)のうち少なくとも2層が連続し、かつ相互に重なっており、
前記層(7)のうち少なくとも1つの層の、前記放射主面(20)と反対側の境界面(78)は、凸形である、
請求項8から12までのいずれか1項記載のオプトエレクトロニクス素子(1)。 - 請求項1から7までのいずれか1項記載の方法を用いて製造された、請求項8から13までのいずれか1項記載のオプトエレクトロニクス素子(1)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102010044985.7 | 2010-09-10 | ||
DE102010044985.7A DE102010044985B4 (de) | 2010-09-10 | 2010-09-10 | Verfahren zum Aufbringen eines Konversionsmittels auf einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil |
PCT/EP2011/065401 WO2012032052A1 (de) | 2010-09-10 | 2011-09-06 | Verfahren zum aufbringen eines konversionsmittels auf einen optoelektronischen halbleiterchip und optoelektronisches bauteil |
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JP2013537362A true JP2013537362A (ja) | 2013-09-30 |
JP5864579B2 JP5864579B2 (ja) | 2016-02-17 |
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JP2013527578A Expired - Fee Related JP5864579B2 (ja) | 2010-09-10 | 2011-09-06 | オプトエレクトロニクス半導体チップ上に変換材を被着する方法 |
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US (1) | US8932888B2 (ja) |
EP (1) | EP2614537A1 (ja) |
JP (1) | JP5864579B2 (ja) |
KR (1) | KR20130052022A (ja) |
CN (1) | CN103098244B (ja) |
DE (1) | DE102010044985B4 (ja) |
WO (1) | WO2012032052A1 (ja) |
Families Citing this family (8)
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DE102012101393A1 (de) | 2012-02-21 | 2013-08-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
US20160201440A1 (en) * | 2015-01-13 | 2016-07-14 | Schlumberger Technology Corporation | Fracture initiation with auxiliary notches |
DE102018118079A1 (de) | 2017-10-09 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle, betriebsverfahren und spektrometer |
WO2021076724A1 (en) * | 2019-10-15 | 2021-04-22 | Lumileds Llc | Forming a multicolor phosphor-converted led array |
US11063191B2 (en) | 2019-10-15 | 2021-07-13 | Lumileds Llc | Forming a multicolor phosphor-converted LED array |
US11749786B2 (en) | 2019-10-15 | 2023-09-05 | Lumileds Llc | Multicolor phosphor-converted LED array |
DE102021118749A1 (de) * | 2021-07-20 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer mehrzahl von optoelektronischen halbleiterbauelementen und optoelektronisches halbleiterbauelement |
DE102021120136A1 (de) * | 2021-08-03 | 2023-02-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen bauelements |
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2010
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-
2011
- 2011-09-06 CN CN201180043749.9A patent/CN103098244B/zh not_active Expired - Fee Related
- 2011-09-06 JP JP2013527578A patent/JP5864579B2/ja not_active Expired - Fee Related
- 2011-09-06 EP EP11755053.3A patent/EP2614537A1/de not_active Withdrawn
- 2011-09-06 US US13/821,614 patent/US8932888B2/en not_active Expired - Fee Related
- 2011-09-06 WO PCT/EP2011/065401 patent/WO2012032052A1/de active Application Filing
- 2011-09-06 KR KR1020137009041A patent/KR20130052022A/ko not_active Application Discontinuation
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JP2005019874A (ja) * | 2003-06-27 | 2005-01-20 | Matsushita Electric Ind Co Ltd | Led、ledチップ、ledモジュール、および照明装置 |
JP2009054891A (ja) * | 2007-08-28 | 2009-03-12 | Panasonic Electric Works Co Ltd | 発光素子の製造方法 |
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Also Published As
Publication number | Publication date |
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DE102010044985A1 (de) | 2012-03-15 |
EP2614537A1 (de) | 2013-07-17 |
US20130292724A1 (en) | 2013-11-07 |
CN103098244B (zh) | 2016-03-02 |
US8932888B2 (en) | 2015-01-13 |
JP5864579B2 (ja) | 2016-02-17 |
CN103098244A (zh) | 2013-05-08 |
DE102010044985B4 (de) | 2022-02-03 |
WO2012032052A1 (de) | 2012-03-15 |
KR20130052022A (ko) | 2013-05-21 |
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