JP5864579B2 - オプトエレクトロニクス半導体チップ上に変換材を被着する方法 - Google Patents
オプトエレクトロニクス半導体チップ上に変換材を被着する方法 Download PDFInfo
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- 239000000463 material Substances 0.000 title claims description 192
- 238000006243 chemical reaction Methods 0.000 title claims description 160
- 239000004065 semiconductor Substances 0.000 title claims description 82
- 238000000034 method Methods 0.000 title claims description 53
- 230000005693 optoelectronics Effects 0.000 title claims description 49
- 238000000151 deposition Methods 0.000 title claims description 7
- 230000005855 radiation Effects 0.000 claims description 63
- 239000006096 absorbing agent Substances 0.000 claims description 43
- 239000002245 particle Substances 0.000 claims description 21
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000006303 photolysis reaction Methods 0.000 claims 1
- 230000015843 photosynthesis, light reaction Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 43
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000000654 additive Substances 0.000 description 15
- 230000000996 additive effect Effects 0.000 description 15
- 238000009826 distribution Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- -1 for example Chemical compound 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
・放射主面を有するオプトエレクトロニクス半導体チップを準備するステップ
・変換材を準備し、当該変換材を支持体の支持体主面に設けるステップ
・前記変換材が前記放射主面の側に来るように、かつ、当該放射主面との間に0を上回る間隔を空けるように、当該変換材を配置するステップ
・前記支持体を透過するパルス状のレーザ光を、前記変換材の吸収材成分に、および/または、前記変換材と前記支持体との間にある剥離膜に照射して、当該吸収材成分または剥離膜を加熱することにより、前記変換材を前記支持体から剥離して前記放射主面に被着するステップ。
Claims (9)
- オプトエレクトロニクス半導体チップ(2)上に変換材(3)を設ける方法であって、
前記方法は、
・放射主面(20)を有する前記オプトエレクトロニクス半導体チップ(2)を準備するステップと、
・変換材(3)を準備し、当該変換材(3)を支持体(4)の支持体主面(40)に設けるステップと、
・前記変換材(3)が前記放射主面(20)の側に来るように、かつ、当該放射主面(20)との間に間隔(D)を空けるように、当該変換材(3)を配置するステップと、
・前記支持体(4)を透過するパルス状のレーザ光(6)を、
前記変換材(3)の吸収体成分(36)に照射し加熱することにより、前記変換材(3)を前記支持体(4)から剥離して前記放射主面(20)に被着するステップと
を有し、
前記レーザ光(6)は、前記支持体主面(40)近傍の薄い領域において、前記吸収体成分(36)によって完全またはほぼ完全に吸収され、
前記変換材(3)の吸収体成分(36)は、前記レーザ光(6)によって熱分解または光分解され、
前記領域の厚さは20nm〜200nmであり、
前記変換材(3)は母材を有し、該母材中に、変換物質粒子(33)と吸収体成分(36)の粒子とが含まれており、該吸収体成分(36)の粒子密度は、前記変換材(3)の粒子密度よりも高く、
前記変換材(3)は、前記母材としてシリコーンを含み、
前記シリコーンは不完全に架橋または硬化された状態で前記支持体(4)に設けられ、前記半導体チップ(2)上に被着した後に初めて完全に硬化または架橋される、
ことを特徴とする方法。 - 前記吸収体成分(36)の粒子の平均粒径は5nm〜20nmである、
請求項1記載の方法。 - 前記変換材(3)を順次、複数の連続する層(7)を成すように前記半導体チップ(2)上に被着し、
前記複数の層(7)のうち少なくとも1つを被着した後、前記半導体チップ(2)と、前記半導体チップ(2)上にすでに被着した前記変換材(3)とによって放出される放射の色座標を求め、
前記色座標に依存して、前記変換材(3)のさらに別の層(7)を前記半導体チップ(2)上に被着する、
請求項1または2記載の方法。 - 前記変換材(3)における前記吸収体成分(36)の質量割合は、5質量%〜35質量%である、
請求項1から3までのいずれか1項記載の方法。 - 前記レーザ光(6)は最大410nmの波長を有し、
前記変換材(3)、または、当該変換材(3)の少なくとも前記吸収体成分(36)は、前記レーザ光(6)の波長を吸収する作用を有する、
請求項1から4までのいずれか1項記載の方法。 - 剥離の際の前記レーザ光(6)のエネルギー密度は、0.2J/cm2〜5J/cm2であり、
前記レーザ光(6)のパルス時間は最大10nsである、
請求項1から5までのいずれか1項記載の方法。 - 前記支持体主面(40)を上から見た場合、前記レーザ光(6)が照射される領域は線状であり、
前記変換材(3)を列ごとに、前記放射主面(20)上に被着する、
請求項1から6までのいずれか1項記載の方法。 - 前記変換物質粒子(33)は、粒径が1μm〜5μmであるCe:YAG粒子である、
請求項1から7までのいずれか1項記載の方法。 - 前記剥離は、ZnOである前記吸収体成分(36)を用いて行われ、
ただし、前記母材内に前記吸収体成分(36)の粒子が均質に分布している、
請求項1から8までのいずれか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010044985.7 | 2010-09-10 | ||
DE102010044985.7A DE102010044985B4 (de) | 2010-09-10 | 2010-09-10 | Verfahren zum Aufbringen eines Konversionsmittels auf einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil |
PCT/EP2011/065401 WO2012032052A1 (de) | 2010-09-10 | 2011-09-06 | Verfahren zum aufbringen eines konversionsmittels auf einen optoelektronischen halbleiterchip und optoelektronisches bauteil |
Publications (2)
Publication Number | Publication Date |
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JP2013537362A JP2013537362A (ja) | 2013-09-30 |
JP5864579B2 true JP5864579B2 (ja) | 2016-02-17 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013527578A Expired - Fee Related JP5864579B2 (ja) | 2010-09-10 | 2011-09-06 | オプトエレクトロニクス半導体チップ上に変換材を被着する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8932888B2 (ja) |
EP (1) | EP2614537A1 (ja) |
JP (1) | JP5864579B2 (ja) |
KR (1) | KR20130052022A (ja) |
CN (1) | CN103098244B (ja) |
DE (1) | DE102010044985B4 (ja) |
WO (1) | WO2012032052A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102012101393A1 (de) | 2012-02-21 | 2013-08-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
US20160201440A1 (en) * | 2015-01-13 | 2016-07-14 | Schlumberger Technology Corporation | Fracture initiation with auxiliary notches |
DE102018118079A1 (de) | 2017-10-09 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle, betriebsverfahren und spektrometer |
DE102018118962A1 (de) * | 2018-08-03 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Elektromagnetische strahlung emittierendes bauelement und verfahren zum aufbringen einer konverterschicht auf ein elektromagnetische strahlung emittierendes bauelement |
US11063191B2 (en) | 2019-10-15 | 2021-07-13 | Lumileds Llc | Forming a multicolor phosphor-converted LED array |
EP4046194B1 (en) * | 2019-10-15 | 2023-08-23 | Lumileds LLC | Forming a multicolor phosphor-converted led array |
US11749786B2 (en) | 2019-10-15 | 2023-09-05 | Lumileds Llc | Multicolor phosphor-converted LED array |
DE102021118749A1 (de) * | 2021-07-20 | 2023-01-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer mehrzahl von optoelektronischen halbleiterbauelementen und optoelektronisches halbleiterbauelement |
DE102021120136A1 (de) | 2021-08-03 | 2023-02-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen bauelements |
Family Cites Families (18)
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US6114088A (en) | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
EP1228892A3 (en) * | 2001-02-02 | 2003-07-02 | Fuji Photo Film Co., Ltd. | Multicolor image forming material and method for forming multicolor image |
JP4699681B2 (ja) * | 2003-06-27 | 2011-06-15 | パナソニック株式会社 | Ledモジュール、および照明装置 |
EP1685746B1 (en) | 2003-11-18 | 2008-01-09 | 3M Innovative Properties Company | Electroluminescent devices and methods of making electroluminescent devices including a color conversion element |
US20050123850A1 (en) * | 2003-12-09 | 2005-06-09 | 3M Innovative Properties Company | Thermal transfer of light-emitting dendrimers |
JP4653662B2 (ja) * | 2004-01-26 | 2011-03-16 | 京セラ株式会社 | 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 |
KR20060017414A (ko) * | 2004-08-20 | 2006-02-23 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자의 제조 방법 |
US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
DE102005018452A1 (de) | 2005-04-20 | 2006-10-26 | Degussa Ag | Herstellung von Zinkoxid-Nanopartikeln und diese als UV-Schutzmittel enthaltende transparente Kunststoffgläser |
US7294861B2 (en) * | 2005-06-30 | 2007-11-13 | 3M Innovative Properties Company | Phosphor tape article |
US7285791B2 (en) * | 2006-03-24 | 2007-10-23 | Goldeneye, Inc. | Wavelength conversion chip for use in solid-state lighting and method for making same |
US20090039375A1 (en) * | 2007-08-07 | 2009-02-12 | Cree, Inc. | Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same |
JP2009054891A (ja) | 2007-08-28 | 2009-03-12 | Panasonic Electric Works Co Ltd | 発光素子の製造方法 |
US20090117672A1 (en) * | 2007-10-01 | 2009-05-07 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of fabrication thereof |
KR20090034412A (ko) * | 2007-10-04 | 2009-04-08 | 삼성전자주식회사 | 발광 칩 및 이의 제조 방법 |
US20090321758A1 (en) * | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
DE102008035524A1 (de) | 2008-07-30 | 2010-02-04 | Ibu-Tec Advanced Materials Ag | Zinkoxid-Partikel, Zinkoxid-Pulver und Verwendung dieser |
JP2012500476A (ja) * | 2008-08-14 | 2012-01-05 | ブルックヘイヴン サイエンス アソシエイツ | 構造化ピラー電極 |
-
2010
- 2010-09-10 DE DE102010044985.7A patent/DE102010044985B4/de not_active Expired - Fee Related
-
2011
- 2011-09-06 EP EP11755053.3A patent/EP2614537A1/de not_active Withdrawn
- 2011-09-06 WO PCT/EP2011/065401 patent/WO2012032052A1/de active Application Filing
- 2011-09-06 CN CN201180043749.9A patent/CN103098244B/zh not_active Expired - Fee Related
- 2011-09-06 JP JP2013527578A patent/JP5864579B2/ja not_active Expired - Fee Related
- 2011-09-06 US US13/821,614 patent/US8932888B2/en not_active Expired - Fee Related
- 2011-09-06 KR KR1020137009041A patent/KR20130052022A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE102010044985B4 (de) | 2022-02-03 |
CN103098244B (zh) | 2016-03-02 |
US8932888B2 (en) | 2015-01-13 |
EP2614537A1 (de) | 2013-07-17 |
US20130292724A1 (en) | 2013-11-07 |
WO2012032052A1 (de) | 2012-03-15 |
JP2013537362A (ja) | 2013-09-30 |
DE102010044985A1 (de) | 2012-03-15 |
KR20130052022A (ko) | 2013-05-21 |
CN103098244A (zh) | 2013-05-08 |
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