TWI456712B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI456712B
TWI456712B TW097107452A TW97107452A TWI456712B TW I456712 B TWI456712 B TW I456712B TW 097107452 A TW097107452 A TW 097107452A TW 97107452 A TW97107452 A TW 97107452A TW I456712 B TWI456712 B TW I456712B
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TW
Taiwan
Prior art keywords
substrate
semiconductor device
disposed
bypass
bypass path
Prior art date
Application number
TW097107452A
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English (en)
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TW200839978A (en
Inventor
菅谷功
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尼康股份有限公司
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Publication of TW200839978A publication Critical patent/TW200839978A/zh
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Publication of TWI456712B publication Critical patent/TWI456712B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321—Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA

Claims (10)

  1. 一種半導體裝置，其特徵為具備：第一基板；第二基板，配置在前述第一基板之一側，與前述第一基板相接合；中介層，配置在前述第一基板與前述第二基板之間，使得前述第一基板與前述第二基板彼此連接；散熱構件，配置在該第一基板之另一側，用以釋出前述第一及第二之各基板的熱的散熱構件；以及熱旁通路徑，設置在前述第二基板與前述散熱構件之間，迂迴延伸於前述第一基板，前述熱旁通路徑包含：第一旁通部，設置於前述中介層；第二旁通部，一端與前述第一旁通部相連接，另一端與前述散熱構件相接觸；其中前述第一基板包含相疊層之複數個半導體晶片。
  2. 如申請專利範圍第1項之半導體裝置，其中，另外具備以覆蓋前述第二基板之至少側面的方式予以配置的保護構件，前述熱旁通路徑係設在前述保護構件之內部與表面之至少一方，且由具有熱傳導率高於前述保護構件之熱傳導率的材料所構成。
  3. 如申請專利範圍第2項之半導體裝置，其中，前述熱旁通路徑係以在與前述保護構件之間形成有間隙的方式予以配置。
  4. 如申請專利範圍第1項之半導體裝置，其中，前述熱旁通路徑更包含複數個第三旁通部，前述第三旁通部設置於前述中介層，且延伸於前述第二基板與前述第 一旁通部之間。
  5. 如申請專利範圍第4項之半導體裝置，其中，前述第二旁通部與前述中介層之間有一間隙。
  6. 如申請專利範圍第1項之半導體裝置，其中，前述熱旁通路徑係固體。
  7. 如申請專利範圍第1項之半導體裝置，其中，在前述熱旁通路徑內之至少一部分封入有液體。
  8. 如申請專利範圍第1項之半導體裝置，其中，在前述第一基板與前述散熱構件之間係配置有已封入液體的外殼構件，前述熱旁通路徑係與前述外殼構件相連接。
  9. 如申請專利範圍第1項之半導體裝置，其中，前述第二基板包含相疊層之複數個半導體晶片。
  10. 如申請專利範圍第1項之半導體裝置，其中，前述第二基板為邏輯LSI，前述第一基板為記憶體。
TW097107452A 2007-03-06 2008-03-04 半導體裝置 TWI456712B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007055354 2007-03-06
JP2007091082 2007-03-30

Publications (2)

Publication Number Publication Date
TW200839978A TW200839978A (en) 2008-10-01
TWI456712B true TWI456712B (zh) 2014-10-11

Family

ID=39738212

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097107452A TWI456712B (zh) 2007-03-06 2008-03-04 半導體裝置

Country Status (5)

Country Link
US (2) US8183686B2 (zh)
JP (1) JP5521546B2 (zh)
KR (1) KR101477309B1 (zh)
TW (1) TWI456712B (zh)
WO (1) WO2008108335A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8154116B2 (en) * 2008-11-03 2012-04-10 HeadwayTechnologies, Inc. Layered chip package with heat sink
US9269646B2 (en) 2011-11-14 2016-02-23 Micron Technology, Inc. Semiconductor die assemblies with enhanced thermal management and semiconductor devices including same
US9136202B2 (en) * 2012-04-17 2015-09-15 Qualcomm Incorporated Enhanced package thermal management using external and internal capacitive thermal material
CN104053337A (zh) * 2013-03-15 2014-09-17 君瞻科技股份有限公司 具散热功能的电子装置及其散热模块
US10541229B2 (en) 2015-02-19 2020-01-21 Micron Technology, Inc. Apparatuses and methods for semiconductor die heat dissipation
US10008395B2 (en) * 2016-10-19 2018-06-26 Micron Technology, Inc. Stacked semiconductor die assemblies with high efficiency thermal paths and molded underfill
WO2023085672A1 (ko) * 2021-11-12 2023-05-19 삼성전자주식회사 열 전도성 계면 물질을 수용하는 인쇄 회로 기판 구조체를 포함하는 전자 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878618A (ja) * 1994-09-08 1996-03-22 Fujitsu Ltd マルチチップモジュール及びその製造方法
JPH0878616A (ja) * 1994-09-02 1996-03-22 Fujitsu Ltd マルチチップ・モジュール
TW367436B (en) * 1997-11-19 1999-08-21 Sun Tai Lin Heat pipes radiator
JP2005005529A (ja) * 2003-06-12 2005-01-06 Toshiba Corp 三次元実装半導体モジュール及び三次元実装半導体システム
JP2006210892A (ja) * 2004-12-27 2006-08-10 Nec Corp 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336052A (ja) 1986-07-30 1988-02-16 Aisin Seiki Co Ltd スタ−リング機関の高温熱交換器
JPS6336052U (zh) * 1986-08-27 1988-03-08
JPH07235633A (ja) * 1994-02-25 1995-09-05 Fujitsu Ltd マルチチップモジュール
JP2002110869A (ja) * 2000-09-26 2002-04-12 Toshiba Corp 半導体装置
JP2005166752A (ja) * 2003-11-28 2005-06-23 Ngk Spark Plug Co Ltd 半導体部品の冷却装置及び冷却装置付き半導体部品
US7271479B2 (en) * 2004-11-03 2007-09-18 Broadcom Corporation Flip chip package including a non-planar heat spreader and method of making the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0878616A (ja) * 1994-09-02 1996-03-22 Fujitsu Ltd マルチチップ・モジュール
JPH0878618A (ja) * 1994-09-08 1996-03-22 Fujitsu Ltd マルチチップモジュール及びその製造方法
TW367436B (en) * 1997-11-19 1999-08-21 Sun Tai Lin Heat pipes radiator
JP2005005529A (ja) * 2003-06-12 2005-01-06 Toshiba Corp 三次元実装半導体モジュール及び三次元実装半導体システム
JP2006210892A (ja) * 2004-12-27 2006-08-10 Nec Corp 半導体装置

Also Published As

Publication number Publication date
TW200839978A (en) 2008-10-01
US20100102441A1 (en) 2010-04-29
WO2008108335A1 (ja) 2008-09-12
US20120205792A1 (en) 2012-08-16
KR20090119772A (ko) 2009-11-19
US8183686B2 (en) 2012-05-22
JP5521546B2 (ja) 2014-06-18
KR101477309B1 (ko) 2014-12-29
JPWO2008108335A1 (ja) 2010-06-17
US8878358B2 (en) 2014-11-04

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