TWI456681B - 成膜裝置、基板處理裝置、成膜方法及電腦可讀取記錄媒體 - Google Patents

成膜裝置、基板處理裝置、成膜方法及電腦可讀取記錄媒體 Download PDF

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TWI456681B
TWI456681B TW098129631A TW98129631A TWI456681B TW I456681 B TWI456681 B TW I456681B TW 098129631 A TW098129631 A TW 098129631A TW 98129631 A TW98129631 A TW 98129631A TW I456681 B TWI456681 B TW I456681B
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turntable
reaction gas
film forming
forming apparatus
substrate
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TW201027654A (en
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Hitoshi Kato
Manabu Honma
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Claims (33)

  1. 一種成膜裝置，係於真空容器內將基板依序暴露於含有第一反應氣體及第二反應氣體之至少2種反應氣體以形成薄膜，其具有：真空容器，係具有頂板；迴轉台，係可迴轉地設置於該真空容器內之迴轉中心周圍，並具有用以載置基板的基板載置部；第1反應氣體供給部及第2反應氣體供給部，係於該迴轉中心周圍的第1角度位置與第2角度位置分別向半徑方向延伸以供給該第1反應氣體與該第2反應氣體；第1分離氣體供給部，係於該第1角度位置與該第2角度位置間的第3角度位置向半徑方向延伸以供給用以分離該第1反應氣體與該第2反應氣體之第1分離氣體；該頂板的第1下面區域，係設置在含有該第1角度位置區域的至少一部份中自該迴轉台起第1高度處，以在該迴轉台上部形成高度為該第1高度的第1空間；該頂板的第2下面區域，係設置在含有該第2角度位置區域的至少一部份中自該迴轉台起第2高度處，以在該迴轉台上部形成高度為該第2高度的第2空間；該頂板的第3下面區域，係設置在含有該第3角度位置區域的至少一部份中自該迴轉台起第3高度處，以在該迴轉台上部形成較該第1高度及該第2高度要低的該第3高度之第3空間；加熱裝置，係用以加熱該第1分離氣體；第2分離氣體供給部，係於含有該迴轉中心之中心部區域供給分離該第1反應氣體與該第2反應氣體之第2分離氣體；以及排氣口，係用以將噴出至該第3空間兩側所之該第1分離氣體及從該中心部區域所噴出之該第2分離氣體連同該第1反應氣體及該第2反應氣體一起排氣。
  2. 如申請專利範圍第1項之成膜裝置，其中該加熱裝置係設置於該真空容器的外部。
  3. 如申請專利範圍第1項之成膜裝置，其中該加熱裝置係利用電阻加熱或高頻誘導加熱來進行加熱。
  4. 如申請專利範圍第1項之成膜裝置，其具有設置於該迴轉台的下側之放射溫度計。
  5. 如申請專利範圍第1項之成膜裝置，其中該迴轉台為透明體。
  6. 如申請專利範圍第5項之成膜裝置，其中該迴轉台係由石英所構成。
  7. 如申請專利範圍第1項之成膜裝置，其中該迴轉台的該迴轉中心下側更進一步地含有用以供給分離該第1反應氣體與該第2反應氣體之第3分離氣體的第3分離氣體供給部。
  8. 如申請專利範圍第1項之成膜裝置，其中該真空容器底面與該迴轉台之間更進一步地含有用以供給分離該第1反應氣體與該第2反應氣體之第4分離氣體的第4分離氣體供給部。
  9. 如申請專利範圍第1項之成膜裝置，其更進一步地具有：支柱，係該真空容器之中心部且設置於該頂板的下面與該真空容器的底面之間；以及迴轉套筒，係圍繞該支柱並可在鉛直軸周圍自由地迴轉；其中該迴轉套筒係該迴轉台的迴轉軸。
  10. 如申請專利範圍第1項之成膜裝置，其中在含有該第1角度位置區域的至少一部份更進一步地包含有設置於自該迴轉台較該第1高度要低之該頂板的第4下面區域，該第4下面區域係鄰接於該第1下面區域。
  11. 如申請專利範圍第1項之成膜裝置，其中在含有該第2角度位置區域的至少一部份更進一步地包含有設置於自該迴轉台較該第2高度要低之該頂板的第5下面區域，該第5下面區域係鄰接於該第2下面區域。
  12. 如申請專利範圍第1項之成膜裝置，其中載置於該基板載置部之該基板的表面係與該迴轉台的表面為相同的高度，或該基板的該表面為較該迴轉台的該表面要更低的位置。
  13. 如申請專利範圍第1項之成膜裝置，其中用以將氣體分別導入該第1反應氣體供給部、該第2反應氣體供給部及該第1分離氣體供給部之氣體導入埠係設置於該迴轉台的迴轉中心側或周緣側。
  14. 如申請專利範圍第1項之成膜裝置，其中該第1分離氣體供給部在相對於迴轉中心之半徑方向排列配置有噴出孔。
  15. 如申請專利範圍第14項之成膜裝置，其中該第3下面區域含有將該噴出孔到挾置其間的2個區域，該2個區域在載置於該基板載置部之該基板中心所通過的部分沿著該迴轉台迴轉方向之寬度尺寸分別為50mm以上。
  16. 如申請專利範圍第1項之成膜裝置，其中該第3下面區域之該頂板的下面為平面或曲面。
  17. 如申請專利範圍第1項之成膜裝置，其更進一步地含有分別設置於該真空容器底面的周緣且在該第1空間及該第2空間的附近之第1排氣口及第2排氣口。
  18. 如申請專利範圍第1項之成膜裝置，其中該第3空間的壓力係較該第1空間的壓力及該第2空間的壓力要高。
  19. 如申請專利範圍第1項之成膜裝置，其中該迴轉台下更進一步地含有用以加熱該迴轉台之加熱部。
  20. 如申請專利範圍第1項之成膜裝置，其中為了將該基板搬入及搬出該真空容器外，而更進一步地含有設置於該真空容器的側面且可利用閘閥來進行開閉之搬送口。
  21. 如申請專利範圍第1項之成膜裝置，其中該第3下面區域係從該迴轉台之迴轉中心越接近周緣而寬度越寬的形狀。
  22. 如申請專利範圍第1項之成膜裝置，其中該第3下面區域從俯視方向所見之形狀為扇型。
  23. 一種基板處理裝置，其具有：如申請專利範圍第1項之成膜裝置；真空搬送室，係氣密地連接於該成膜裝置，並於內部設置有基板搬送部；以及預備真空室，係氣密地連接於該真空搬送室，並可將氣氛在真空氣氛與大氣氣氛間切換。
  24. 一種成膜方法，係於真空容器內將基板依序暴露於含有第一反應氣體及第二反應氣體之至少2種反應氣體以在基板上形成薄膜時，藉由使載置有該基板之迴轉台上側用以供給分離該第1反應氣體與該第2反應氣體之第1分離氣體的區域從該迴轉台上面至該真空容器的頂板的高度，為較供給該第1反應氣體及該第2反應氣體區域從該迴轉台上面至該頂板的高度要低，以在該迴轉台上面與該頂板之間形成相對高度較低之空間，並供給該第1分離氣體，以及將用以分離該第1反應氣體及該第2反應氣體之第2分離氣體供給至該頂板下面的該迴轉台之迴轉中心上側的中心部區域，並藉由將該第1分離氣體及該第2分離氣體連同該第1反應氣體及該第2反應氣體一起排氣來分離地供給該第1反應氣體及該第2反應氣體同時形成薄膜，其中包含下列步驟：載置步驟，係將基板載置於該真空容器內的該迴轉台；迴轉步驟，係使該迴轉台迴轉；成膜步驟，係從下側加熱該迴轉台，並分別從設置於該迴轉台上不同的位置之第1反應氣體供給部及第2反應氣體供給部來供給該第1反應氣體及該第2反應氣體，且從設置於該第1反應氣體供給部與該第2反應氣體供給部之間的第1分離氣體供給部來供給經加熱後的該第1分離氣體，迴轉該迴轉台並移動該基板，並重複地進行將該第1反應氣體供給至該基板的表面、停止該第1反應氣體、供給該第2反應氣體及停止該第2反應氣體，以形成薄膜。
  25. 如申請專利範圍第24項之成膜方法，其係從該迴轉台的下側利用放射溫度計來測量該迴轉台或該基板的溫度同時形成薄膜。
  26. 如申請專利範圍第24項之成膜方法，其中該迴轉台係由透明體所構成。
  27. 如申請專利範圍第26項之成膜方法，其中該迴轉台係由石英所構成。
  28. 如申請專利範圍第24項之成膜方法，其係使位於該迴轉台上側之供給該第1反應氣體區域的一部分之含有該第1反應氣體供給部的部分從該迴轉台上面至該真空容器的該頂板的高度，為較位於供給該第1反應氣體區域的其他部分之從該迴轉台上面至該真空容器的該頂板的高度要低，以供給該第1反應氣體。
  29. 如申請專利範圍第24項之成膜方法，其係使位於該迴轉台上側之供給該第2反應氣體區域的一部分之含有該第2反應氣體供給部的部分之從該迴轉台上面至該真空容器的該頂板的高度，為較位於供給該第2反應氣體區域的其他部分之從該迴轉台上面至該真空容器的該頂板的高度要低，以供給該第2反應氣體。
  30. 如申請專利範圍第24項之成膜方法，其中該迴轉台設置有凹部以使載置於該迴轉台之該基板的表面與該迴轉台的表面為相同高度或較該迴轉台的該表面要低。
  31. 如申請專利範圍第24項之成膜方法，其係加熱該迴轉台同時進行該成膜步驟。
  32. 如申請專利範圍第24項之成膜方法，其係透過為了專門分別地將第1反應氣體及該第2反應氣體排氣所設置之第1排氣口及第2排氣口來將該真空容器排氣同時進行該成膜步驟。
  33. 一種電腦可讀取記錄媒體，係於電腦記錄有實行申請專利範圍第24項之成膜方法的程式。
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