JP6047235B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JP6047235B2 JP6047235B2 JP2015522479A JP2015522479A JP6047235B2 JP 6047235 B2 JP6047235 B2 JP 6047235B2 JP 2015522479 A JP2015522479 A JP 2015522479A JP 2015522479 A JP2015522479 A JP 2015522479A JP 6047235 B2 JP6047235 B2 JP 6047235B2
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- 238000012545 processing Methods 0.000 title claims description 42
- 239000000758 substrate Substances 0.000 claims description 229
- 238000010438 heat treatment Methods 0.000 claims description 101
- 238000001816 cooling Methods 0.000 claims description 95
- 238000012937 correction Methods 0.000 claims description 76
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000005338 heat storage Methods 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D15/00—Handling or treating discharged material; Supports or receiving chambers therefor
- F27D15/02—Cooling
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
- F27D2007/066—Vacuum
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Description
(第1実施形態)
図1は本発明に係る真空処理装置が取り付けられる成膜装置10の代表的な構成を示した平面図である。この成膜装置10はクラスタ型であり、複数の成膜チャンバ12を備えている。ロボット搬送装置13が備えられた搬送チャンバ11が中央位置に設置されている。ロボット搬送装置13は伸縮自在なアームに設けられたハンド13aに基板を載置することができる。アームの端部は搬送チャンバ11の中心部に回転自在に取り付けられている。
(第2実施形態)
図13のa、bに第2実施形態に係る加熱冷却チャンバの断面図を示す。上述の第1実施形態に係る加熱冷却チャンバ17は、一体に形成されたリング状の温度補正部45を備えているが、本実施形態の加熱冷却チャンバは、2つのセグメント65a,65bに分割された温度補正部45を備えている。蓄熱部材も分割されてセグメント65a,65bに設けられている。セグメント65a,65bには、切欠き部66が設けられており、リフトピン43aと干渉しないようになっている。また、セグメント65a,65bには、基板Wを支持する凸部を設けてもよい。この場合、第1支持部42は、温度補正部に設けられていることとなる。温度補正部は第1支持部42と同様に基板Wを支持することが可能であるため、第1支持部42は不要となる。
図14に第3実施形態に係る加熱冷却チャンバの断面図を示す。本実施形態は、温度補正部45に替えてランプヒーターを用いた実施形態である。温度補
正部45の代わりに用いるランプヒーターを補助ヒーター57とする。補助ヒーター57は加熱冷却室21に固定されており、基板Wの加熱の際に出力をONにすることで、加熱中の基板Wの外周部分の裏面を加熱し、基板Wの中心部と外周部分の温度差を低減させる。本実施形態は蓄熱部材を備えていないので予備加熱に相当する操作は必要としない。
上述の各実施形態に係る加熱冷却チャンバ17は、冷却部の位置が固定されているが、冷却部が進退動可能に構成にしてもよい。本実施形態の加熱冷却チャンバでは、基板Wを冷却する際に、基板Wは第1支持部42、若しくは、基板Wを支持する凸部を有する温度補正部に支持された状態で、冷却部(基板ホルダー25)が基板Wの裏面に接する位置まで上昇移動する。冷却部が上昇移動することが可能であるためリフトピンは必ずしも必要ない。また、基板Wの加熱の際には、冷却部(基板ホルダー25)は基板Wから離れて下方に降下移動する。
11 搬送チャンバ
12 成膜チャンバ
13 ロボット搬送装置
13a ハンド
14 ロード/アンロードチャンバ
15 クリーンニングチャンバ
17 加熱冷却チャンバ
21 加熱冷却室
22 ポンプ室
22a 真空ポンプ
24 加熱部
25 冷却部
31 透明窓
33 加熱ランプ
35 基板載置部
37 冷却装置
41 基板支持部
42 第1支持部
43a リフトピン(第2支持部)
45,46,47 温度補正部
46a 遮熱板
46b スペーサ
47a 57 補助ヒーター
49 補正部移動装置
65a,65b セグメント
66 切欠き部
Claims (11)
- 真空容器と、
前記真空容器内に基板を支持する基板支持手段と、
前記基板支持手段に支持された前記基板の処理面に対向して設けられた加熱手段と、
前記基板支持手段に支持された前記基板の裏面に対向して設けられた冷却手段と、
前記加熱手段によって前記基板を加熱処理する際に、前記基板支持手段に支持された前記基板と前記冷却手段との間の所定位置に配置されることで前記基板の中心部と外周部分との温度差を低減させるために、前記基板の外周部分の温度を補正する温度補正部と、
前記温度補正部を、前記所定位置と、前記所定位置から退避させられた退避位置との間で移動する補正部移動手段と、
を備え、
前記基板支持手段は、
前記加熱手段によって前記基板が加熱処理される加熱位置、および前記冷却手段によって前記基板が冷却処理される冷却位置に前記基板を移動可能に設けられ、
前記基板支持手段は、
前記加熱位置で前記基板を支持する第1支持部と、
前記加熱位置で前記第1支持部に支持された前記基板を受け取り前記冷却位置に移動する第2支持部と、
を有し、
前記補正部移動手段は、前記第2支持部が前記第1支持部から前記基板を受け取る前に、前記温度補正部を前記退避位置に退避させることを特徴とする真空処理装置。 - 前記真空容器は、前記真空容器内に前記基板を搬送する搬送装置を備えた搬送容器に気密に連結されており、
前記第1支持部は、前記搬送装置との間で前記基板の受け渡しをすることを特徴とする請求項1に記載の真空処理装置。 - 前記温度補正部は、前記基板よりも大きな直径を有するリング状に形成されていることを特徴とする請求項1に記載の真空処理装置。
- 真空容器と、
前記真空容器内に基板を支持する基板支持手段と、
前記基板支持手段に支持された前記基板の処理面に対向して設けられた加熱手段と、
前記基板支持手段に支持された前記基板の裏面に対向して設けられた冷却手段と、
前記加熱手段によって前記基板を加熱処理する際に、前記基板の中心部と外周部分との 温度差を低減させるために、前記基板の外周部分の温度を補正する温度補正部と、
前記温度補正部を、所定位置と、前記所定位置から退避させられた退避位置との間で移 動する補正部移動手段と、
を備え、
前記基板支持手段は、
前記加熱手段によって前記基板が加熱処理される加熱位置、および前記冷却手段によっ て前記基板が冷却処理される冷却位置に前記基板を移動可能に設けられ、
前記基板支持手段は、
前記温度補正部に設けられ、前記加熱位置で前記基板を支持する第1支持部と、
前記加熱位置で前記第1支持部に支持された前記基板を受け取り前記冷却位置に移動す る第2支持部と、
を有し、
前記温度補正部は、複数のセグメントから構成されており、
前記補正部移動手段は、前記複数のセグメントを異なる方向に移動させることを特徴とする真空処理装置。 - 前記温度補正部は、複数のセグメントから構成されており、
前記補正部移動手段は、前記複数のセグメントを異なる方向に移動させることを特徴とする請求項1に記載の真空処理装置。 - 前記温度補正部は、前記基板支持手段に接触しないように切欠き部を有することを特徴とする請求項5に記載の真空処理装置。
- 前記冷却手段は、前記基板を冷却する際に前記基板支持手段に支持された前記基板の裏面に接する位置まで移動可能であり、前記基板の加熱の際には前記基板から離れ下方に移動することが可能に設けられることを特徴とする請求項1に記載の真空処理装置。
- 前記温度補正部は、前記加熱手段から照射された熱を蓄積する蓄熱部材を備えることを特徴とする請求項1に記載の真空処理装置。
- 前記温度補正部は、
前記加熱手段から照射された熱を蓄積する蓄熱部材と、
前記蓄熱部材と前記冷却手段との間に設けられ、前記加熱手段から照射される熱を遮蔽する遮熱板と、
を備えることを特徴とする請求項1に記載の真空処理装置。 - 前記温度補正部は、前記基板の外周部分を加熱するヒーターを備えていることを特徴とする請求項1に記載の真空処理装置。
- 前記温度補正部は、前記第2支持部に接触しないように切欠き部を有することを特徴と する請求項4に記載の真空処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013122527 | 2013-06-11 | ||
JP2013122527 | 2013-06-11 | ||
PCT/JP2014/001181 WO2014199538A1 (ja) | 2013-06-11 | 2014-03-04 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6047235B2 true JP6047235B2 (ja) | 2016-12-21 |
JPWO2014199538A1 JPWO2014199538A1 (ja) | 2017-02-23 |
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JP2018531324A (ja) * | 2015-10-09 | 2018-10-25 | 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. | 加熱装置および加熱チャンバ |
CN108118296A (zh) * | 2017-12-08 | 2018-06-05 | 北京创昱科技有限公司 | 一种冷却板 |
KR102099103B1 (ko) * | 2018-10-15 | 2020-04-09 | 세메스 주식회사 | 가열 플레이트 냉각 방법 및 기판 처리 장치 |
US20220267893A1 (en) * | 2019-11-11 | 2022-08-25 | Beijing Naura Microelectronics Equipment Co., Ltd. | Sputtering device |
CN111725114B (zh) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | 加热灯的位置校正装置 |
CN213951334U (zh) * | 2020-10-26 | 2021-08-13 | 北京北方华创微电子装备有限公司 | 一种晶片承载机构及半导体工艺设备 |
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JPH05144825A (ja) * | 1991-11-21 | 1993-06-11 | Kokusai Electric Co Ltd | 基板加熱装置 |
JPH0869977A (ja) * | 1994-08-29 | 1996-03-12 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2003017430A (ja) * | 2001-06-28 | 2003-01-17 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2007012846A (ja) * | 2005-06-30 | 2007-01-18 | Ushio Inc | 光照射式加熱装置および光照射式加熱方法 |
WO2011043490A1 (ja) * | 2009-10-09 | 2011-04-14 | キヤノンアネルバ株式会社 | 真空加熱冷却装置 |
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US5144825A (en) * | 1990-09-27 | 1992-09-08 | The Boeing Company | Elevated temperature envelope forming |
DE19821007A1 (de) * | 1998-05-11 | 1999-11-25 | Steag Rtp Systems Gmbh | Verfahren und Vorrichtung zum thermischen Behandeln von Substraten |
US6485290B2 (en) * | 1999-08-10 | 2002-11-26 | The Coleman Company, Inc. | Portable lantern |
TW484187B (en) * | 2000-02-14 | 2002-04-21 | Tokyo Electron Ltd | Apparatus and method for plasma treatment |
JP5021112B2 (ja) * | 2000-08-11 | 2012-09-05 | キヤノンアネルバ株式会社 | 真空処理装置 |
US6861321B2 (en) * | 2002-04-05 | 2005-03-01 | Asm America, Inc. | Method of loading a wafer onto a wafer holder to reduce thermal shock |
CN102027381B (zh) * | 2008-03-28 | 2014-04-16 | Abb技术有限公司 | 确定电流的至少一个性质的方法、设备和计算机程序产品 |
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Patent Citations (6)
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JPH0424917A (ja) * | 1990-05-16 | 1992-01-28 | Sumitomo Electric Ind Ltd | 半導体ウエハのアニール方法及びそれに用いられるアニール用治具 |
JPH05144825A (ja) * | 1991-11-21 | 1993-06-11 | Kokusai Electric Co Ltd | 基板加熱装置 |
JPH0869977A (ja) * | 1994-08-29 | 1996-03-12 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2003017430A (ja) * | 2001-06-28 | 2003-01-17 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2007012846A (ja) * | 2005-06-30 | 2007-01-18 | Ushio Inc | 光照射式加熱装置および光照射式加熱方法 |
WO2011043490A1 (ja) * | 2009-10-09 | 2011-04-14 | キヤノンアネルバ株式会社 | 真空加熱冷却装置 |
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WO2014199538A1 (ja) | 2014-12-18 |
KR20170125114A (ko) | 2017-11-13 |
TWI570259B (zh) | 2017-02-11 |
US10425990B2 (en) | 2019-09-24 |
TW201516173A (zh) | 2015-05-01 |
KR20160017059A (ko) | 2016-02-15 |
KR101970866B1 (ko) | 2019-04-19 |
JPWO2014199538A1 (ja) | 2017-02-23 |
US20160057812A1 (en) | 2016-02-25 |
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