TWI456350B - 含有具脲基之聚矽氧的阻劑底層膜形成組成物 - Google Patents

含有具脲基之聚矽氧的阻劑底層膜形成組成物 Download PDF

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TWI456350B
TWI456350B TW098100667A TW98100667A TWI456350B TW I456350 B TWI456350 B TW I456350B TW 098100667 A TW098100667 A TW 098100667A TW 98100667 A TW98100667 A TW 98100667A TW I456350 B TWI456350 B TW I456350B
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group
resist
organic
underlayer film
film
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TW200951624A (en
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Makoto Nakajima
Yuta Kanno
Wataru Shibayama
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Nissan Chemical Ind Ltd
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    • G03F7/004—Photosensitive materials
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    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
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    • G03F7/004—Photosensitive materials
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    • G—PHYSICS
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    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups

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Claims (9)

  1. 一種微影術用阻劑底層膜形成組成物，其特徵係含有以式(1)表示的水解性有機矽烷、與由以式(4)表示的有機矽化合物及以式(5)表示的有機矽化合物所構成群中選出的至少一種有機矽化合物的組合、彼等之水解物、或彼等之水解縮合物，且上述式(4)表示的有機矽化合物及上述式(5)表示的有機矽化合物所構成群中選出的至少一種有機矽化合物中包含苯基三甲氧基矽烷或苯基三乙氧基矽烷， 〔式(1)中，T1 、T2 及T3 ，彼等3個基中至少一個係以式(2)： (式(2)中，R3 表示烷撐基、芳撐基、鹵化烷撐基、鹵化芳撐基、烯撐基、或具有環氧基、丙烯醯基、甲基丙烯醯基、巰基、胺基或氰基之有機基所衍生之2價的連結基，n為0或1之整數，R4 表示烷基、芳基、鹵化烷基、鹵化芳基、烯基、或具有環氧基、丙烯醯基、甲基丙烯醯基、巰基、胺基或氰基之有機基，R5 表示烷氧基、醯氧基或鹵素原子，m為0或1之整數)所表示之基，其餘之T1 、T2 及T3 各自獨立，表示氫原子、R1 或R2 (惟，R1 及R2 各自獨立，表示烷基、芳基、鹵化烷基、鹵化芳基、烯基、或具有環氧基、丙烯醯基、甲基丙烯醯基、巰基、胺基或氰基之有機基，R1 與R2 可一起形成環)〕R6a Si(R7 )4-a 式(4)(式中，R6 為烷基、芳基、鹵化烷基、鹵化芳基、烯基、或具有環氧基、丙烯醯基、甲基丙烯醯基、巰基、胺基或氰基之有機基，且為透過Si-C鍵結而與矽原子鍵結者，R7 表示烷氧基、醯氧基或鹵素原子，a為0乃至3之整數)〔R8c Si(R9 )3-c 〕2 Yb 式(5)(式中，R8 為烷基，R9 表示烷氧基、醯氧基或鹵素原子，Y為烷撐基或芳撐基，b為0或1之整數，c為0或1之整數)。
  2. 如申請專利範圍第1項之阻劑底層膜形成組成物，其中前述式(1)的水解性有機矽烷係式(3)： (式(3)中，R3 、R4 、R5 、n及m與前述式(2)相同意義)所表 示之異氰酸酯化合物、與氨、第1級胺或第2級胺進行反應所得者。
  3. 如申請專利範圍第1項之阻劑底層膜形成組成物，其中，前述式(1)的水解性有機矽烷係由含胺基或亞胺基之水解性有機矽烷與異氰酸酯化合物進行反應所得者。
  4. 如申請專利範圍第1項之微影術用阻劑底層膜形成組成物，其特徵係含有上述式(1)所表示之水解性有機矽烷與上述式(4)所表示之有機矽化合物之水解縮合物之聚合物。
  5. 如申請專利範圍第1項之微影術用阻劑底層膜形成組成物，其特徵係含有上述式(1)所表示之水解性有機矽烷之水解縮合物之聚合物與上述式(4)所表示之有機矽化合物之水解縮合物之聚合物。
  6. 如申請專利範圍第1項之阻劑底層膜形成組成物，其更含有硬化觸媒。
  7. 一種阻劑底層膜，其特徵係藉由於半導體基板上塗佈申請專利範圍第1項至第6項中任1項之阻劑底層膜形成組成物並燒成而得。
  8. 一種半導體裝置之製造方法，其特徵係包含：將申請專利範圍第1項至第6項中任1項之阻劑底層膜形成組成物塗佈於半導體基板上並進行燒成而形成阻劑底層膜之步驟、於前述阻劑底層膜上塗佈阻劑用組成物、形成阻劑膜之步驟、使前述阻劑膜曝光之步驟、曝光後使阻劑顯像而獲得阻劑圖型之步驟、透過阻劑圖型使阻劑底 層膜進行蝕刻之步驟、及透過經圖型化之阻劑與阻劑底層膜進行半導體基板之加工的步驟。
  9. 一種半導體裝置之製造方法，其特徵係包含：在半導體基板上形成有機膜之步驟、於前述有機膜上塗佈申請專利範圍第1項至第6項中任1項之阻劑底層膜形成組成物並進行燒成而形成阻劑底層膜之步驟、於前述阻劑底層膜上，塗佈阻劑用組成物而形成阻劑層之步驟、使前述阻劑膜曝光之步驟，曝光後使阻劑顯像而獲得阻劑圖型之步驟、透過阻劑圖型使阻劑底層膜進行蝕刻之步驟、透過經圖型化之阻劑底層膜使有機底層膜進行蝕刻之步驟、及透過經圖型化之有機底層膜使半導體基板加工之步驟。
TW098100667A 2008-01-11 2009-01-09 含有具脲基之聚矽氧的阻劑底層膜形成組成物 TWI456350B (zh)

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