TWI456029B - 螢光體及其製造方法 - Google Patents

螢光體及其製造方法 Download PDF

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TWI456029B
TWI456029B TW101133316A TW101133316A TWI456029B TW I456029 B TWI456029 B TW I456029B TW 101133316 A TW101133316 A TW 101133316A TW 101133316 A TW101133316 A TW 101133316A TW I456029 B TWI456029 B TW I456029B
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Taiwan
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manufacturing
cerium
oxynitride phosphor
sintering
alkaline earth
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TW101133316A
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TW201336970A (zh
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Naotoshi Matsuda
Yumi Fukuda
Keiko Albessard
Masahiro Kato
Iwao Mitsuishi
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Toshiba Kk
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)

Claims (14)

  1. 一種氧氮化物螢光體，其特徵為具有以下列一般式(1)：(M1-x Eux )Ala Sib Oc Nd Ce (1)(式中，M表鹼土類元素，且滿足0<x<0.2、1.3≦a≦1.8、3.5≦b≦4、0.1≦c≦0.3、6.7≦d≦7.2、0.01≦e≦0.1者)所表示的組成，以2價的銪來活化者。
  2. 如申請專利範圍第1項之氧氮化物螢光體，其中前述M，可為鍶。
  3. 如申請專利範圍第1項之氧氮化物螢光體，其中以波長330nm~470nm的光激發時，由螢光體放出的光的峰值波長為630nm以上。
  4. 如申請專利範圍第1項之氧氮化物螢光體，其中前述螢光體含有以CuK α特性X線來測定之XRD圖譜，在繞射角度(2 θ)為15.0~15.25°、23.1~23.20°、24.85~25.05°、26.95~27.15°、29.3~29.6°、30.9~31.1°、31.6~31.8°、33.0~33.20°、35.25~35.45°、36.1~36.25°、及56.4~56.65之11個處所之中，至少於7個處所同時呈現繞射峰的成分。
  5. 一種如申請專利範圍第1項的氧氮化物螢光體之製造方法，其特徵為包含：混合鹼土類金屬的氧化物或氫氧化物、氧化銪、及矽粉末或氮化矽，在含有氫與氮的氛圍中燒結，形成第一中間產物的第一步驟，及對前述第一中間產物混合碳粉末，在含有氫與氮的氛圍中燒結形成第二中間產物的第二步驟，以及對第二中間產物混合至少矽粉末或氮化矽與氮化鋁在含有氫與氮的氛圍中燒結的第三步驟。
  6. 如申請專利範圍第5項之製造方法，其中前述鹼土類金屬，可為鍶。
  7. 如申請專利範圍第5項之製造方法，其中氧對前述第一中間產物中的鹼土類金屬與銪之和的莫耳比未滿1.0。
  8. 如申請專利範圍第5項之製造方法，其中前述第一步驟之燒結溫度在1300~1600℃之範圍內。
  9. 如申請專利範圍第5項之製造方法，其中第二步驟之碳粉末的混合量，相對於前述鹼土類元素與前述銪之和，為莫耳比1.0~2.0倍。
  10. 如申請專利範圍第5項之製造方法，其中前述第二步驟之燒結溫度在1300~1600℃之範圍內。
  11. 如申請專利範圍第5項之製造方法，其中前述矽粉末之平均粒徑，為5μm以上未滿150μm。
  12. 如申請專利範圍第5項之製造方法，其中前述第 三步驟之燒結溫度在1500℃以上。
  13. 如申請專利範圍第5項之製造方法，其中進而把藉由前述第三步驟得到之氧氮化物螢光體，在加壓氮氣氛圍中進行燒結。
  14. 一種發光裝置，其特徵為具備申請範圍第1項之氧氮化物螢光體，及可以將其激發之發光元件。
TW101133316A 2012-03-08 2012-09-12 螢光體及其製造方法 TWI456029B (zh)

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JP2012051731A JP5727955B2 (ja) 2012-03-08 2012-03-08 蛍光体およびその製造方法

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US (1) US9187693B2 (zh)
EP (1) EP2636717B1 (zh)
JP (1) JP5727955B2 (zh)
KR (1) KR101386740B1 (zh)
CN (1) CN103305215B (zh)
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CN105623657B (zh) * 2016-01-29 2017-04-26 江苏博睿光电有限公司 一种含氮发光颗粒及其制备方法、含氮发光体和发光器件
CN106047341B (zh) * 2016-06-02 2019-01-22 北京宇极科技发展有限公司 一种稀土掺杂荧光粉、其合成方法及其在led器件上的应用
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CN103305215B (zh) 2015-01-28
TW201336970A (zh) 2013-09-16
EP2636717B1 (en) 2014-04-09
KR20130103278A (ko) 2013-09-23
KR101386740B1 (ko) 2014-04-17
US9187693B2 (en) 2015-11-17
CN103305215A (zh) 2013-09-18
JP5727955B2 (ja) 2015-06-03
EP2636717A1 (en) 2013-09-11
US20130241395A1 (en) 2013-09-19
JP2013185084A (ja) 2013-09-19

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