TWI453235B - 形成畫像用下層膜 - Google Patents

形成畫像用下層膜 Download PDF

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Publication number
TWI453235B
TWI453235B TW098135951A TW98135951A TWI453235B TW I453235 B TWI453235 B TW I453235B TW 098135951 A TW098135951 A TW 098135951A TW 98135951 A TW98135951 A TW 98135951A TW I453235 B TWI453235 B TW I453235B
Authority
TW
Taiwan
Prior art keywords
carbon atoms
group
polyimine
film
coo
Prior art date
Application number
TW098135951A
Other languages
English (en)
Chinese (zh)
Other versions
TW201031687A (en
Inventor
Shinichi Maeda
Go Ono
Satoshi Minami
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201031687A publication Critical patent/TW201031687A/zh
Application granted granted Critical
Publication of TWI453235B publication Critical patent/TWI453235B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
TW098135951A 2008-10-23 2009-10-23 形成畫像用下層膜 TWI453235B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008273217 2008-10-23

Publications (2)

Publication Number Publication Date
TW201031687A TW201031687A (en) 2010-09-01
TWI453235B true TWI453235B (zh) 2014-09-21

Family

ID=42119383

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098135951A TWI453235B (zh) 2008-10-23 2009-10-23 形成畫像用下層膜

Country Status (5)

Country Link
JP (1) JP5532259B2 (ko)
KR (1) KR101674645B1 (ko)
CN (1) CN102197489B (ko)
TW (1) TWI453235B (ko)
WO (1) WO2010047346A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5783380B2 (ja) * 2012-03-23 2015-09-24 Jsr株式会社 液晶配向剤および液晶配向膜の形成方法
JPWO2014097993A1 (ja) * 2012-12-18 2017-01-12 日産化学工業株式会社 多環芳香族ビニル化合物を含む自己組織化膜の下層膜形成組成物
JP2019001859A (ja) * 2017-06-13 2019-01-10 Dic株式会社 高分子膜表面の改質方法
JP7229354B2 (ja) * 2019-07-11 2023-02-27 富士フイルム株式会社 樹脂組成物、膜、カラーフィルタ、固体撮像素子、画像表示装置、樹脂および化合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006021491A (ja) * 2004-07-09 2006-01-26 Ricoh Co Ltd 積層構造体、積層構造体を用いた光学素子、表示素子、演算素子及びこれらの製造方法
JP2006060113A (ja) * 2004-08-23 2006-03-02 Ricoh Co Ltd 積層構造体、積層構造体を用いた電子素子、これらの製造方法、電子素子アレイ及び表示装置
TW201002762A (en) * 2008-03-10 2010-01-16 Nissan Chemical Ind Ltd Underlayer film composition for forming image

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
EP0213573B1 (en) * 1985-08-30 1991-11-21 General Electric Company Crystalline polyimides containing cumulative phenylene sulfide units
US5288588A (en) * 1989-10-27 1994-02-22 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition comprising an o-quinone diazide as a photosensitive compound
US5449741A (en) * 1990-09-28 1995-09-12 Nippon Telegraph And Telephone Corporation Polyimide optical material
JP2743860B2 (ja) * 1994-04-28 1998-04-22 日本電気株式会社 利用者プログラムのデバッグ処理システム
JPH08146431A (ja) * 1994-11-24 1996-06-07 Hitachi Ltd 液晶配向膜用組成物および液晶配向膜
TW498091B (en) * 1998-11-09 2002-08-11 Kanegafuchi Chemical Ind Polyimide composition and its manufacture process
JP3635615B2 (ja) 1999-02-02 2005-04-06 大日本印刷株式会社 エレクトロルミネッセンス素子及びその製造方法
WO2001095690A1 (en) * 2000-06-06 2001-12-13 Ekc Technology, Inc. Method of making electronic materials
JP4894120B2 (ja) * 2001-09-27 2012-03-14 Ｊｎｃ株式会社 フェニレンジアミン誘導体、液晶配向膜および液晶表示素子
JP3951886B2 (ja) 2002-10-23 2007-08-01 株式会社日立製作所 配線基板，表示デバイス，表示デバイス用カラーフィルター、及び配線基板形成方法，表示デバイス形成方法，表示デバイス用カラーフィルター形成方法
JP4009181B2 (ja) * 2002-11-08 2007-11-14 富士フイルム株式会社 平版印刷版原版
JP4312476B2 (ja) 2003-03-10 2009-08-12 株式会社リコー パターン形成方法、電子素子、電子素子アレイ及び画像表示装置
JP4614349B2 (ja) * 2004-09-30 2011-01-19 信越化学工業株式会社 アルコール性水酸基を有するポリイミドおよびその製造方法
JP5209844B2 (ja) * 2004-11-30 2013-06-12 株式会社リコー 電子素子及びその製造方法、演算素子並びに表示素子
JP4386454B2 (ja) * 2006-08-22 2009-12-16 信越化学工業株式会社 アルカリ水溶液に可溶な感光性ポリイミド樹脂、該樹脂を含む組成物、及び該組成物から得られる膜

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006021491A (ja) * 2004-07-09 2006-01-26 Ricoh Co Ltd 積層構造体、積層構造体を用いた光学素子、表示素子、演算素子及びこれらの製造方法
JP2006060113A (ja) * 2004-08-23 2006-03-02 Ricoh Co Ltd 積層構造体、積層構造体を用いた電子素子、これらの製造方法、電子素子アレイ及び表示装置
TW201002762A (en) * 2008-03-10 2010-01-16 Nissan Chemical Ind Ltd Underlayer film composition for forming image

Also Published As

Publication number Publication date
TW201031687A (en) 2010-09-01
KR101674645B1 (ko) 2016-11-09
CN102197489A (zh) 2011-09-21
CN102197489B (zh) 2013-08-21
WO2010047346A1 (ja) 2010-04-29
KR20110082051A (ko) 2011-07-15
JP5532259B2 (ja) 2014-06-25
JPWO2010047346A1 (ja) 2012-03-22

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