JP5532259B2 - 画像形成用下層膜 - Google Patents

画像形成用下層膜 Download PDF

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Publication number
JP5532259B2
JP5532259B2 JP2010534828A JP2010534828A JP5532259B2 JP 5532259 B2 JP5532259 B2 JP 5532259B2 JP 2010534828 A JP2010534828 A JP 2010534828A JP 2010534828 A JP2010534828 A JP 2010534828A JP 5532259 B2 JP5532259 B2 JP 5532259B2
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JP
Japan
Prior art keywords
formula
polyimide
carbon atoms
group
film
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JP2010534828A
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English (en)
Japanese (ja)
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JPWO2010047346A1 (ja
JPWO2010047346A6 (ja
Inventor
真一 前田
豪 小野
悟志 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
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Nissan Chemical Corp
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Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP2010534828A priority Critical patent/JP5532259B2/ja
Publication of JPWO2010047346A1 publication Critical patent/JPWO2010047346A1/ja
Publication of JPWO2010047346A6 publication Critical patent/JPWO2010047346A6/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L2029/7863—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with an LDD consisting of more than one lightly doped zone or having a non-homogeneous dopant distribution, e.g. graded LDD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2010534828A 2008-10-23 2009-10-21 画像形成用下層膜 Active JP5532259B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010534828A JP5532259B2 (ja) 2008-10-23 2009-10-21 画像形成用下層膜

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008273217 2008-10-23
JP2008273217 2008-10-23
JP2010534828A JP5532259B2 (ja) 2008-10-23 2009-10-21 画像形成用下層膜
PCT/JP2009/068132 WO2010047346A1 (ja) 2008-10-23 2009-10-21 画像形成用下層膜

Publications (3)

Publication Number Publication Date
JPWO2010047346A1 JPWO2010047346A1 (ja) 2012-03-22
JPWO2010047346A6 JPWO2010047346A6 (ja) 2012-03-22
JP5532259B2 true JP5532259B2 (ja) 2014-06-25

Family

ID=42119383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010534828A Active JP5532259B2 (ja) 2008-10-23 2009-10-21 画像形成用下層膜

Country Status (5)

Country Link
JP (1) JP5532259B2 (ko)
KR (1) KR101674645B1 (ko)
CN (1) CN102197489B (ko)
TW (1) TWI453235B (ko)
WO (1) WO2010047346A1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5783380B2 (ja) * 2012-03-23 2015-09-24 Jsr株式会社 液晶配向剤および液晶配向膜の形成方法
US10508181B2 (en) * 2012-12-18 2019-12-17 Nissan Chemical Industries, Ltd. Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound
JP2019001859A (ja) * 2017-06-13 2019-01-10 Dic株式会社 高分子膜表面の改質方法
WO2021006133A1 (ja) * 2019-07-11 2021-01-14 富士フイルム株式会社 樹脂組成物、膜、カラーフィルタ、固体撮像素子、画像表示装置、樹脂および化合物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213573B1 (en) * 1985-08-30 1991-11-21 General Electric Company Crystalline polyimides containing cumulative phenylene sulfide units
US5288588A (en) * 1989-10-27 1994-02-22 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition comprising an o-quinone diazide as a photosensitive compound
US5449741A (en) * 1990-09-28 1995-09-12 Nippon Telegraph And Telephone Corporation Polyimide optical material
JP2743860B2 (ja) * 1994-04-28 1998-04-22 日本電気株式会社 利用者プログラムのデバッグ処理システム
JPH08146431A (ja) * 1994-11-24 1996-06-07 Hitachi Ltd 液晶配向膜用組成物および液晶配向膜
TW498091B (en) * 1998-11-09 2002-08-11 Kanegafuchi Chemical Ind Polyimide composition and its manufacture process
JP3635615B2 (ja) 1999-02-02 2005-04-06 大日本印刷株式会社 エレクトロルミネッセンス素子及びその製造方法
EP1305824A4 (en) * 2000-06-06 2007-07-25 Univ Fraser Simon METHOD FOR MANUFACTURING ELECTRONIC MATERIALS
JP4894120B2 (ja) * 2001-09-27 2012-03-14 Ｊｎｃ株式会社 フェニレンジアミン誘導体、液晶配向膜および液晶表示素子
JP3951886B2 (ja) 2002-10-23 2007-08-01 株式会社日立製作所 配線基板，表示デバイス，表示デバイス用カラーフィルター、及び配線基板形成方法，表示デバイス形成方法，表示デバイス用カラーフィルター形成方法
JP4009181B2 (ja) * 2002-11-08 2007-11-14 富士フイルム株式会社 平版印刷版原版
JP4312476B2 (ja) 2003-03-10 2009-08-12 株式会社リコー パターン形成方法、電子素子、電子素子アレイ及び画像表示装置
JP2006021491A (ja) * 2004-07-09 2006-01-26 Ricoh Co Ltd 積層構造体、積層構造体を用いた光学素子、表示素子、演算素子及びこれらの製造方法
JP4678574B2 (ja) * 2004-08-23 2011-04-27 株式会社リコー 積層構造体、積層構造体を用いた電子素子、電子素子アレイ及び表示装置
JP4614349B2 (ja) * 2004-09-30 2011-01-19 信越化学工業株式会社 アルコール性水酸基を有するポリイミドおよびその製造方法
JP5209844B2 (ja) * 2004-11-30 2013-06-12 株式会社リコー 電子素子及びその製造方法、演算素子並びに表示素子
JP4386454B2 (ja) * 2006-08-22 2009-12-16 信越化学工業株式会社 アルカリ水溶液に可溶な感光性ポリイミド樹脂、該樹脂を含む組成物、及び該組成物から得られる膜
KR101547588B1 (ko) * 2008-03-10 2015-08-26 닛산 가가쿠 고교 가부시키 가이샤 화상 형성용 하층막 조성물

Also Published As

Publication number Publication date
JPWO2010047346A1 (ja) 2012-03-22
KR20110082051A (ko) 2011-07-15
WO2010047346A1 (ja) 2010-04-29
TW201031687A (en) 2010-09-01
TWI453235B (zh) 2014-09-21
CN102197489B (zh) 2013-08-21
KR101674645B1 (ko) 2016-11-09
CN102197489A (zh) 2011-09-21

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