TW201002762A - Underlayer film composition for forming image - Google Patents
Underlayer film composition for forming image Download PDFInfo
- Publication number
- TW201002762A TW201002762A TW098107837A TW98107837A TW201002762A TW 201002762 A TW201002762 A TW 201002762A TW 098107837 A TW098107837 A TW 098107837A TW 98107837 A TW98107837 A TW 98107837A TW 201002762 A TW201002762 A TW 201002762A
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- polyimine
- film
- image formation
- underlayer film
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 115
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 134
- 239000002243 precursor Substances 0.000 claims abstract description 96
- 125000000962 organic group Chemical group 0.000 claims abstract description 47
- 150000004985 diamines Chemical class 0.000 claims description 31
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 24
- -1 monofluoromethyl group Chemical group 0.000 claims description 19
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims description 15
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 150000001412 amines Chemical class 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 230000018044 dehydration Effects 0.000 claims description 7
- 238000006297 dehydration reaction Methods 0.000 claims description 7
- 238000006798 ring closing metathesis reaction Methods 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 125000002947 alkylene group Chemical group 0.000 claims description 4
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 4
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 2
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 235000021286 stilbenes Nutrition 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 abstract description 80
- 239000004642 Polyimide Substances 0.000 abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 35
- 125000003709 fluoroalkyl group Chemical group 0.000 abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 238000007363 ring formation reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 213
- 239000000243 solution Substances 0.000 description 86
- 239000007788 liquid Substances 0.000 description 57
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 54
- 239000002904 solvent Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 45
- 238000003786 synthesis reaction Methods 0.000 description 45
- 239000010410 layer Substances 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 31
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 30
- 230000008859 change Effects 0.000 description 29
- 229910052709 silver Inorganic materials 0.000 description 29
- 239000004332 silver Substances 0.000 description 29
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 28
- 238000006116 polymerization reaction Methods 0.000 description 28
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 27
- 238000000576 coating method Methods 0.000 description 23
- 239000000843 powder Substances 0.000 description 23
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 22
- 239000000463 material Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 21
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 20
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 20
- 239000003960 organic solvent Substances 0.000 description 18
- 238000002360 preparation method Methods 0.000 description 18
- WVOLTBSCXRRQFR-SJORKVTESA-N Cannabidiolic acid Natural products OC1=C(C(O)=O)C(CCCCC)=CC(O)=C1[C@@H]1[C@@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-SJORKVTESA-N 0.000 description 17
- WVOLTBSCXRRQFR-DLBZAZTESA-M cannabidiolate Chemical compound OC1=C(C([O-])=O)C(CCCCC)=CC(O)=C1[C@H]1[C@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-DLBZAZTESA-M 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 17
- 239000006185 dispersion Substances 0.000 description 15
- 239000003054 catalyst Substances 0.000 description 14
- 239000010419 fine particle Substances 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- 239000002253 acid Substances 0.000 description 12
- 238000004528 spin coating Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 10
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- 238000009413 insulation Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 125000001931 aliphatic group Chemical group 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 150000002466 imines Chemical class 0.000 description 7
- 239000012046 mixed solvent Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229920002959 polymer blend Polymers 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 229920002098 polyfluorene Polymers 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000005160 1H NMR spectroscopy Methods 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical group CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- 150000008065 acid anhydrides Chemical class 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 150000002576 ketones Chemical class 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical class CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 4
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 210000002784 stomach Anatomy 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- AFABGHUZZDYHJO-UHFFFAOYSA-N 2-Methylpentane Chemical compound CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- DFPAKSUCGFBDDF-UHFFFAOYSA-N Nicotinamide Chemical group NC(=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- OXKUGIFNIUUKAW-UHFFFAOYSA-N n,n-dimethylformamide;hydrazine Chemical compound NN.CN(C)C=O OXKUGIFNIUUKAW-UHFFFAOYSA-N 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 150000004060 quinone imines Chemical class 0.000 description 2
- 125000004151 quinonyl group Chemical group 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 238000001226 reprecipitation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 1
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- FVCHRIQAIOHAIC-UHFFFAOYSA-N 2-[1-[1-[1-(oxiran-2-ylmethoxy)propan-2-yloxy]propan-2-yloxy]propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COC(C)COC(C)COCC1CO1 FVCHRIQAIOHAIC-UHFFFAOYSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- KUAUJXBLDYVELT-UHFFFAOYSA-N 2-[[2,2-dimethyl-3-(oxiran-2-ylmethoxy)propoxy]methyl]oxirane Chemical compound C1OC1COCC(C)(C)COCC1CO1 KUAUJXBLDYVELT-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- PPPFYBPQAPISCT-UHFFFAOYSA-N 2-hydroxypropyl acetate Chemical compound CC(O)COC(C)=O PPPFYBPQAPISCT-UHFFFAOYSA-N 0.000 description 1
- UENRXLSRMCSUSN-UHFFFAOYSA-N 3,5-diaminobenzoic acid Chemical compound NC1=CC(N)=CC(C(O)=O)=C1 UENRXLSRMCSUSN-UHFFFAOYSA-N 0.000 description 1
- WQYPVEKEHDLOBS-UHFFFAOYSA-N 3-(2-hydroxypropoxy)propane-1,2-diol Chemical compound CC(O)COCC(O)CO WQYPVEKEHDLOBS-UHFFFAOYSA-N 0.000 description 1
- CRORGGSWAKIXSA-UHFFFAOYSA-N 3-methylbutyl 2-hydroxypropanoate Chemical compound CC(C)CCOC(=O)C(C)O CRORGGSWAKIXSA-UHFFFAOYSA-N 0.000 description 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- ZMWWYPZBEJOZDX-UHFFFAOYSA-N 4-hexadecoxybenzene-1,3-diamine Chemical compound CCCCCCCCCCCCCCCCOC1=CC=C(N)C=C1N ZMWWYPZBEJOZDX-UHFFFAOYSA-N 0.000 description 1
- HJSYPLCSZPEDCQ-UHFFFAOYSA-N 5-[2-(3-amino-4-methylphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-methylaniline Chemical compound C1=C(N)C(C)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C)C(N)=C1 HJSYPLCSZPEDCQ-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- 241000208140 Acer Species 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017048 AsF6 Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- OQIRRFNERJYHIX-UHFFFAOYSA-N C(=C)N1C(CCC1)=O.C1=CC=CC=2C3=CC=CC=C3CC12 Chemical compound C(=C)N1C(CCC1)=O.C1=CC=CC=2C3=CC=CC=C3CC12 OQIRRFNERJYHIX-UHFFFAOYSA-N 0.000 description 1
- KIVJMUYVXSPQQJ-UHFFFAOYSA-N C(C)N1C(CCC1)=O.NN Chemical compound C(C)N1C(CCC1)=O.NN KIVJMUYVXSPQQJ-UHFFFAOYSA-N 0.000 description 1
- OTXFGEHSBKFEAB-UHFFFAOYSA-N C(C)OC(=O)NCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(C)OC(=O)NCCCC(C(OC)(OC)OC)CCCCCCCC OTXFGEHSBKFEAB-UHFFFAOYSA-N 0.000 description 1
- SWUMRQQSIBCUPC-UHFFFAOYSA-N C(C)OC(=O)NCCCC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C(C)OC(=O)NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SWUMRQQSIBCUPC-UHFFFAOYSA-N 0.000 description 1
- XRNDMACZMJPCRX-UHFFFAOYSA-N C(CC)C(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound C(CC)C(C(OCC)(OCC)OCC)CCCCCCCC XRNDMACZMJPCRX-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- INBHERDVWLZTEH-UHFFFAOYSA-N CC(C)O.C(CCC)OCC(C)O Chemical compound CC(C)O.C(CCC)OCC(C)O INBHERDVWLZTEH-UHFFFAOYSA-N 0.000 description 1
- GUGLGYAIYJRFSA-UHFFFAOYSA-N COC(CCCCCCCCCCCCNCCNCCN)(OC)OC Chemical compound COC(CCCCCCCCCCCCNCCNCCN)(OC)OC GUGLGYAIYJRFSA-UHFFFAOYSA-N 0.000 description 1
- RSJIEXSHQKCIDB-UHFFFAOYSA-N COC(CCCCCCCCCN1NN=C(C=C1)CCC)(OC)OC Chemical compound COC(CCCCCCCCCN1NN=C(C=C1)CCC)(OC)OC RSJIEXSHQKCIDB-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical group CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- UNVWJAYEKZVDDL-UHFFFAOYSA-N N(C(=O)N)CCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound N(C(=O)N)CCCC(C(OC)(OC)OC)CCCCCCCC UNVWJAYEKZVDDL-UHFFFAOYSA-N 0.000 description 1
- XEEHRQPQNJOFIQ-UHFFFAOYSA-N N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC XEEHRQPQNJOFIQ-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- XGEGHDBEHXKFPX-UHFFFAOYSA-N N-methylthiourea Natural products CNC(N)=O XGEGHDBEHXKFPX-UHFFFAOYSA-N 0.000 description 1
- HDJGANPLOWXKTM-UHFFFAOYSA-N NC(=O)NCCCC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound NC(=O)NCCCC(C(OCC)(OCC)OCC)CCCCCCCC HDJGANPLOWXKTM-UHFFFAOYSA-N 0.000 description 1
- HNJYHRSYMUUVEX-UHFFFAOYSA-N NC(CC(C(OC)(OC)OC)CCCCCCCC)C Chemical compound NC(CC(C(OC)(OC)OC)CCCCCCCC)C HNJYHRSYMUUVEX-UHFFFAOYSA-N 0.000 description 1
- AJOYCSBPBSZRHI-UHFFFAOYSA-N NC(CC(C(OCC)(OCC)OCC)CCCCCCCC)C Chemical compound NC(CC(C(OCC)(OCC)OCC)CCCCCCCC)C AJOYCSBPBSZRHI-UHFFFAOYSA-N 0.000 description 1
- XGRDGUMPNAWHLS-UHFFFAOYSA-N NCCC(C(OC)(OC)C)(CCCCCCCC)CCCN.NN Chemical compound NCCC(C(OC)(OC)C)(CCCCCCCC)CCCN.NN XGRDGUMPNAWHLS-UHFFFAOYSA-N 0.000 description 1
- XJDCHDFUMGSEHD-UHFFFAOYSA-N NCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound NCCCC(C(OC)(OC)OC)CCCCCCCC XJDCHDFUMGSEHD-UHFFFAOYSA-N 0.000 description 1
- NFJGVKXEAUZSDV-UHFFFAOYSA-N NN.C(C)(=O)N(C)C Chemical compound NN.C(C)(=O)N(C)C NFJGVKXEAUZSDV-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 1
- FHKPLLOSJHHKNU-INIZCTEOSA-N [(3S)-3-[8-(1-ethyl-5-methylpyrazol-4-yl)-9-methylpurin-6-yl]oxypyrrolidin-1-yl]-(oxan-4-yl)methanone Chemical compound C(C)N1N=CC(=C1C)C=1N(C2=NC=NC(=C2N=1)O[C@@H]1CN(CC1)C(=O)C1CCOCC1)C FHKPLLOSJHHKNU-INIZCTEOSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000005530 alkylenedioxy group Chemical group 0.000 description 1
- 238000005576 amination reaction Methods 0.000 description 1
- WLPWBUSZWTZYTQ-UHFFFAOYSA-N amino(aminoazo)amine Chemical class NNN=NN WLPWBUSZWTZYTQ-UHFFFAOYSA-N 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- CURBACXRQKTCKZ-UHFFFAOYSA-N cyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)C(C(O)=O)C1C(O)=O CURBACXRQKTCKZ-UHFFFAOYSA-N 0.000 description 1
- SUTYQJRWOFHRQW-UHFFFAOYSA-N cyclohexanone propan-2-one Chemical compound CC(=O)C.C1(CCCCC1)=O.CC(=O)C SUTYQJRWOFHRQW-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 150000004683 dihydrates Chemical class 0.000 description 1
- UYAAVKFHBMJOJZ-UHFFFAOYSA-N diimidazo[1,3-b:1',3'-e]pyrazine-5,10-dione Chemical compound O=C1C2=CN=CN2C(=O)C2=CN=CN12 UYAAVKFHBMJOJZ-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 235000019387 fatty acid methyl ester Nutrition 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- AWKZQVYCCQCKBH-UHFFFAOYSA-N hydrazine 1-methylpyrrolidin-2-one Chemical compound CN1C(CCC1)=O.NN AWKZQVYCCQCKBH-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 150000003903 lactic acid esters Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- IPLONMMJNGTUAI-UHFFFAOYSA-M lithium;bromide;hydrate Chemical compound [Li+].O.[Br-] IPLONMMJNGTUAI-UHFFFAOYSA-M 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- XGEGHDBEHXKFPX-NJFSPNSNSA-N methylurea Chemical compound [14CH3]NC(N)=O XGEGHDBEHXKFPX-NJFSPNSNSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000010811 mineral waste Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- VJQATTQDFKIBMY-UHFFFAOYSA-N n,n,n',n'-tetrakis(oxiran-2-ylmethyl)-1-phenylmethanediamine Chemical compound C1OC1CN(C(N(CC1OC1)CC1OC1)C=1C=CC=CC=1)CC1CO1 VJQATTQDFKIBMY-UHFFFAOYSA-N 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 1
- VMHWSIJFDBLPKO-UHFFFAOYSA-N n-benzyltridecan-1-amine Chemical compound CCCCCCCCCCCCCNCC1=CC=CC=C1 VMHWSIJFDBLPKO-UHFFFAOYSA-N 0.000 description 1
- 229940017144 n-butyl lactate Drugs 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 108010094020 polyglycine Proteins 0.000 description 1
- 229920000232 polyglycine polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 108010026466 polyproline Proteins 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- OCDPVICYFFZSFE-UHFFFAOYSA-N prop-1-enoxybenzene Chemical group CC=COC1=CC=CC=C1 OCDPVICYFFZSFE-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
- C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1078—Partially aromatic polyimides wholly aromatic in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
201002762 六、發明說明: 【發明所屬之技術領域】 本發明係關於含有聚醯亞胺前驅物及/或使該聚醯亞 胺前驅物經脫水閉環而得之聚醯亞胺之圖像形成用底層膜 組成物,進而係關於使用該組成物製作之硬化膜及電子裝 置。 【先前技術】 於電子裝置之製造過程中,就電極或機能性薄膜之圖 型形成,提案有將利用液體之濡濕性差異之分塗技術應用 於機能性薄膜之圖型化。此係於基板表面上,作成液體易 濡濕之區域及液體不易濡濕之區域所構成之圖型層,接著 於此圖型層上繼續塗佈含有機能性薄膜形成材料之液體並 乾燥,僅於液體易濡濕之區域形成機能性薄膜,而製作有 機EL(電致發光)元件或有機FEI(電場效型電晶體)元件等 之電子裝置之方法。 上述電極圖型形成中所用之圖像形成液,係使用以 PEDOT/PSS水溶液爲主,但該PEDOT/PSS水溶液之表面 張力較高故以旋塗法或印刷法等之方法成膜有其困難,因 此一般將其調整至表面張力較低。表面張力低之圖像形成 液,由於對成爲成膜對象之基板顯示濡濕擴展之性質,故 爲了抑制目的部位以外之區域之液體濡濕擴展,有必要僅 使成爲目的之部位予以親水性化,該區域表面爲疏水性化 -5- 201002762 近幾年來,作爲電極或機能性薄膜等之圖型層可利用 採用由含有疏水性側鏈之聚醯亞胺前驅物或由該聚醯亞胺 前驅物所得之聚醯亞胺,藉由使據醯亞胺膜之親疏水性產 生變化,使水接觸角產生變化,而分塗塗佈型機能材料之 技術已進行廣泛硏究。 例如,已明確顯示有使用具有脂肪族環之聚醯亞胺前 驅物或聚醯亞胺所得之濡濕性變化層之特性(例如參考專 利文獻1)。於該文獻中,推測使聚醯亞胺之脂肪族環斷開 係造成親疏水性變化之要因之一,亦推測於側鏈量(亦即 側鏈數)多之情況,使表面能(臨界表面張力)變低,成爲疏 液性。 又相同文獻之實施例中,揭示有使用具有脂肪族環之 二酸酐與側鏈具有烴基之二胺所得之聚醯胺酸使用作爲濡 濕性變化層時,顯示藉由紫外線照射親疏水性有較大變化 之結果,又於該濡濕性變化層上形成由 PEDOT/PSS所構 成之電極層而製作電子元件。 專利文獻1 :國際公開第2006/137366號說明書 【發明內容】 [發明所解決之課題] 通常,爲使圖像形成液成爲成膜可能,而設計成具有 比水低之表面張力。爲此,圖像形成液考慮塗佈之容易性 ’大多爲具有比水之表面張力低之有機溶劑系統。 然而,上述文獻中所例示之疏水性側鏈,即使側鏈含 -6 201002762 量相當多時,未曝光部之疏水性(亦即撥水性)尙無法謂胃 足夠高,例如於未曝光部滲出圖像形成液時,最後圖像开多 成液就此乾燥,而有無法獲得目的圖像之問題。 再者,疏水性基一般比介電率低,側鏈含量之增加將 引起比介電率降低,尤其是疏水性高之氟烷基,相較於其 他疏水性基,其比介電率亦極低,故於有機電晶體等中使 用之閘極絕緣膜中無法謂爲較佳故仍.有問題。 因此,主要於有機電晶體之源極·汲極電殛之圖型化 中使用之圖像形成用底層膜有必要同時具有作爲閘極絕緣 膜之機能,故尙無使用於側鏈中含有上述氟烷基之聚醯亞 胺系材料作爲圖像形成用底層膜之例。 因此,對使一般閘極絕緣膜以使有機電晶體之驅動電 壓降低爲目的而提高比介電率之方式設計材料,或儘可能 以提高撥水性(疏水性)爲目的而增加含氟烷基側鏈之含量 ,即使最後大幅降低比介電率,例如藉由高的撥水性而圖 型化微細圖像,仍有閘極絕緣膜性能降低的問題。所以’ 要求有可抑制比介電率降低同時獲得高撥水性之具有疏水 性側鏈之新穎材料。 本發明係鑑於上述狀況而完成者’其目的再於提供一 種圖像形成用底層膜組成物,其所形成之圖像形成用底層 膜具有高的撥水性(疏水性),以少量紫外線曝光量可容易 地變化親疏水性,且可抑制比介電率的降低。 又,目的在於提供圖像形成用底層膜組成物,其以旋 轉塗佈法或噴墨印刷法等之塗佈方法將以低表面張力溶劑 201002762 作爲主要溶劑之圖像形成液所形成之底層膜’可高精細地 圖型化(圖像形成)。 再者’提供一種可在2 0 0 °C以下(1 8 0 °C以下)之溫度燒 成且電絕緣性或化學安定性高之圖像形成用底層膜形成組 成物以及絕緣性優異之閘極洩漏電流少之良好特性之有機 電晶體用閘極絕緣膜。 [用以解決課題之手段] 本發明人等,爲達上述目的,經重複積極檢討之結果 ,發現於聚醯亞胺前驅物及/或由該聚醯亞胺前驅物所得 之聚醯亞胺所得之聚醯亞胺結構內,以不超過30莫耳%之 範圍導入具有氟烷基之苯基,不僅可藉由照射紫外線而使 親水性/疏水性產生大幅變化,且可賦予高的撥水性而不 降低比介電率,因而完成本發明。 亦即,本發明之第一目的,係有關圖像形成用底層膜 組成物,其特徵爲含有由以下述式(1)及(la)表示之結構單 位之聚醯亞胺前驅物及使該聚醯亞胺前驅物經脫水閉環所 得之聚醯亞胺所組成組群中所選出之至少一種化合物:201002762 VI. Description of the Invention: [Technical Field] The present invention relates to image formation of a polyimide containing a polyimide precursor and/or a polyimine obtained by subjecting the polyimide precursor to dehydration ring closure The underlayer film composition is further related to a cured film and an electronic device produced using the composition. [Prior Art] In the manufacturing process of an electronic device, a pattern of an electrode or a functional film is formed, and a coating technique using a difference in wettability of a liquid is applied to the patterning of a functional film. This is a pattern layer formed on the surface of the substrate to form a region where the liquid is easily wetted and a region where the liquid is not easily wetted, and then the liquid containing the functional film forming material is continuously applied to the pattern layer and dried, only for the liquid. A method of forming an electronic device such as an organic EL (electroluminescence) device or an organic FEI (electric field effect transistor) device by forming a functional film in a region that is easy to wet. The image forming liquid used in the formation of the electrode pattern described above is mainly composed of a PEDOT/PSS aqueous solution. However, the surface tension of the PEDOT/PSS aqueous solution is high, so that it is difficult to form a film by a spin coating method or a printing method. Therefore, it is generally adjusted to a lower surface tension. Since the image forming liquid having a low surface tension exhibits the property of spreading the wetness of the substrate to be formed into a film, it is necessary to make the target portion hydrophilic only in order to suppress the liquid wet expansion in the region other than the target portion. The surface of the region is hydrophobic -5 - 201002762 In recent years, a patterned layer such as an electrode or a functional film can be used by a polyimide precursor containing a hydrophobic side chain or by a polyimide precursor. The obtained polyimine has a change in the water contact angle by changing the hydrophilicity of the ruthenium imine film, and the technique of coating the coated functional material has been extensively studied. For example, the property of the wetness-changing layer obtained by using a polyfluorene imine precursor having an aliphatic ring or polyimine has been clearly shown (for example, refer to Patent Document 1). In this document, it is presumed that one of the factors causing the change of the hydrophilicity and hydrophobicity of the aliphatic ring of the polyimine is also caused by the fact that the amount of the side chain (that is, the number of side chains) is large, and the surface energy (critical surface) The tension) becomes low and becomes lyophobic. In the examples of the same literature, it is disclosed that when a polyamic acid obtained by using a dicarboxylic acid having an aliphatic ring and a diamine having a hydrocarbon group in a side chain is used as a wetness change layer, it is revealed that the hydrophilicity and hydrophobicity are greater by ultraviolet irradiation. As a result of the change, an electrode layer composed of PEDOT/PSS was formed on the wetness-changing layer to fabricate an electronic component. [Patent Document 1] International Publication No. 2006/137366 [Disclosure] [Problems to be Solved by the Invention] Generally, in order to form an image forming liquid, it is possible to have a surface tension lower than that of water. For this reason, the image forming liquid is often considered to have an organic solvent system having a surface tension lower than that of water. However, in the hydrophobic side chain exemplified in the above literature, even if the side chain contains a considerable amount of -6 201002762, the hydrophobicity (ie, water repellency) of the unexposed portion cannot be said to be sufficiently high in the stomach, for example, exudation in the unexposed portion. When the image forming liquid is formed, the final image is dried by a large amount of liquid, and there is a problem that the desired image cannot be obtained. Furthermore, the hydrophobic group is generally lower than the dielectric constant, and the increase in the side chain content causes a decrease in the specific dielectric ratio, especially the fluoroalkyl group having a higher hydrophobicity, and the specific dielectric ratio is also higher than that of other hydrophobic groups. It is extremely low, so it cannot be said that it is preferable in the gate insulating film used in an organic transistor or the like. There is a problem. Therefore, the image forming underlayer film which is mainly used for the patterning of the source and the gate electrode of the organic transistor needs to have the function as a gate insulating film at the same time, so that it is not used in the side chain. A polyfluoroimine-based material of a fluoroalkyl group is exemplified as an underlayer film for image formation. Therefore, the material is designed in such a manner that the specific gate insulating film is lowered in order to lower the driving voltage of the organic transistor, or the fluorine-containing alkyl group is added as much as possible for the purpose of improving water repellency (hydrophobicity). The content of the side chain, even if the specific dielectric ratio is drastically lowered, for example, by patterning a fine image by high water repellency, there is still a problem that the performance of the gate insulating film is lowered. Therefore, there is a demand for a novel material having a hydrophobic side chain which can suppress a decrease in dielectric ratio while achieving high water repellency. The present invention has been made in view of the above circumstances, and an object thereof is to provide an underlayer film composition for image formation, which has an image forming underlayer film having high water repellency (hydrophobicity) and a small amount of ultraviolet light exposure. The hydrophilicity and hydrophobicity can be easily changed, and the decrease in specific dielectric ratio can be suppressed. Further, an object of the present invention is to provide an underlayer film composition for image formation, which is formed by an image forming liquid having a low surface tension solvent 201002762 as a main solvent by a coating method such as a spin coating method or an inkjet printing method. 'High-resolution map (image formation). In addition, the present invention provides an underlayer film forming composition and an excellent insulating property which can be fired at a temperature of 200 ° C or lower (1 80 ° C or lower) and has high electrical insulating properties or chemical stability. A gate insulating film for an organic transistor having a good characteristic of low leakage current. [Means for Solving the Problem] The inventors of the present invention have found that the polyimine imine and/or the polyimine obtained from the polyimide precursor are obtained by repeating the positive review for the above purpose. In the obtained polyimine structure, a phenyl group having a fluoroalkyl group is introduced in a range of not more than 30 mol%, and not only a change in hydrophilicity/hydrophobicity but also a high dialing can be imparted by irradiation of ultraviolet rays. The present invention has been completed by water-based without lowering the specific dielectric ratio. That is, the first object of the present invention relates to an underlayer film composition for image formation characterized by containing a polyimine precursor having a structural unit represented by the following formulas (1) and (la) and At least one compound selected from the group consisting of polyazonia imines obtained by dehydration ring closure of the polyamidene precursor:
、/R1aOOC C00R28 \ L \ ΐΐ ΤΓΐ 201002762 (式中,A表示4價有機基,B1表示以下 $ (2)表示之至少 一種2價有機基,B2表示2價有機基,RI、 R > R1 ' R2a 分別獨立表示氫原子或一價有機基,η爲式(1)表示之結構 單位之合計莫耳數’ m爲式(la)表示之結構單位之合計莫 耳數,η與m分別表示正整數且滿足〇.〇ign/(n + mpQ 3) [化2] 々Xl、xrR3 (2) (式中,X】表示單鍵、_〇-、-COO-、-OCO-、-CONH-、-CH20- ,X2表示碳原子數3至18之2價有機基,R3表示碳原子 數2至12之全氟烷基)。 本發明第二目的係有關上述第一目的記載之圖像形成 用底層膜組成物,其中前述式(la)中,B2爲選自下式(3)至 (5)所組成組群之至少一種: [化3]/R1aOOC C00R28 \ L \ ΐΐ ΤΓΐ 201002762 (wherein A represents a tetravalent organic group, B1 represents at least one divalent organic group represented by the following $(2), and B2 represents a divalent organic group, RI, R > R1 ' R2a independently represents a hydrogen atom or a monovalent organic group, and η is the total number of moles of the structural unit represented by the formula (1) 'm is the total number of moles of the structural unit represented by the formula (la), and η and m respectively represent A positive integer satisfies 〇.〇ign/(n + mpQ 3) [Chemical 2] 々Xl, xrR3 (2) (wherein, X] represents a single bond, _〇-, -COO-, -OCO-, -CONH -, -CH20-, X2 represents a divalent organic group having 3 to 18 carbon atoms, and R3 represents a perfluoroalkyl group having 2 to 12 carbon atoms. The second object of the present invention is an image relating to the above first object. The underlayer film composition for forming, wherein in the above formula (1), B2 is at least one selected from the group consisting of the following formulas (3) to (5): [Chemical 3]
(式中,Y1分別獨立表示單鍵、醚鍵、酯鍵、硫酸鍵 -9 - 201002762 、醯胺鍵、碳原子數1至3之可具有分支結構之伸烷基, 或碳原子數1至3之可具有分支結構之伸烷一氧基,γ表 示單鍵、醚鍵、酯鍵、硫醚鍵、醯胺鍵,R分別獨丛表示 氫原子、甲基、三氟甲基,R5表示氫原子、甲基、二氟甲 基,R6表示伸甲基、伸乙基,j分別獨立表不〇或丨)。 作爲第三目的,係有關上述第一目的或第一目的5己載 之圖像形成用底層膜組成物,其中前述式(1)及式(la)中’ A所表示之4價有機基爲選自下述式(6)至(1 1}所組成組群 之至少一'種基·(wherein Y1 independently represents a single bond, an ether bond, an ester bond, a sulfuric acid bond-9 - 201002762, a guanamine bond, an alkyl group having a branched structure of 1 to 3 carbon atoms, or a carbon number of 1 to 3 may have a branched structure of alkylene oxide, γ represents a single bond, an ether bond, an ester bond, a thioether bond, a guanamine bond, and R respectively represents a hydrogen atom, a methyl group, a trifluoromethyl group, and R5 represents A hydrogen atom, a methyl group, a difluoromethyl group, and R6 represents a methyl group and an ethyl group, and j is independently represented by hydrazine or hydrazine. The third object is the underlayer film composition for image formation according to the above first object or the first object, wherein the tetravalent organic group represented by 'A in the above formula (1) and formula (la) is At least one species selected from the group consisting of the following formulas (6) to (1 1}
(式中,r7、R8、R9、R1Q分別獨立表示氫原子、氟原子或 碳原子數1至4之烴基)° 作爲第四目的,係有關上述第一目的至第三目的中任 一目的中記載之圖像形成用底層膜組成物’其中含有以前 述式(1)及式(la)表示之結構單位之聚醯亞胺前驅物及該聚 醯亞胺前驅物經脫水閉環所得之聚醯亞目安爲由以下式(16) 表示之四羧酸二酐與以下式(17)及(18)表示之二胺成分反 應而得之聚醯亞胺前驅物及聚酿亞胺: -10- 201002762 [化5](wherein, r7, R8, R9, and R1Q each independently represent a hydrogen atom, a fluorine atom, or a hydrocarbon group having 1 to 4 carbon atoms). As a fourth object, it is related to any one of the above first to third objects. The underlayer film composition for image formation described above contains a polyimine precursor having a structural unit represented by the above formulas (1) and (la), and a polyfluorene obtained by dehydration ring closure of the polyimine precursor. The sub-ammonium is a polyimine precursor and a polyaniline obtained by reacting a tetracarboxylic dianhydride represented by the following formula (16) with a diamine component represented by the following formulas (17) and (18): -10- 201002762 [化5]
(1β) (17)(1β) (17)
HaN-B^Ha (18) (式中,A、B1及B2與前述式(1)及式(la)中相同定義)。 第五目的’係使用第一目的至第四目的中任一目的中 記載之圖像形成用底層膜組成物所得之圖像形成用底層膜 〇 第六目的,係使用第一目的至第五目的中任一目的中 記載之圖像形成用底層膜組成物所得之電極圖型形成用底 層膜。 第七目的,係使用第一目的至第五目的中任一目的中 記載之圖像形成用底層膜組成物所得之有機電晶體用閘極 絕緣膜。 第八目的,係使用第七目的中記載之有機電晶體用閘 極絕緣膜所得之有機電晶體。 [發明效果] 本發明之含有選自聚醯亞胺前驅物及由該聚醯亞胺前 驅物所得之聚醯亞胺所成組群之至少一種化合物之圖像形 成用底層膜組成物,藉由其所形成之膜,藉由照射紫外線 可使該膜對於以低表面張力之溶劑作爲主溶劑而使用之圖 像形成液之接觸角大爲改變而可賦予親疏水性的變化。因 -11 - 201002762 此’利用該等特性,可形成底層膜,其可形成電極等之機 能性材料等之圖像。 再者,由本發明之組成物所形成之硬化膜,可$ $比 介電率筒的圖像形成用底層膜。比介電率闻的圖像形成用 底層膜亦可使用作爲有機電晶體用閘極絕緣膜。且,t匕# 電率高的圖像形成用底層膜可降低有機電晶體之,驅^電壓 0 再者,由本發明之組成物所形成之硬化膜,由於不僅 可藉噴墨法塗佈圖像形成液,亦可以旋轉塗佈或浸漬法等 各種方法塗佈,故就生產性方面而言爲有效的材料。 【實施方式】 本發明爲一種含有選自具有新穎構造之聚醯亞胺前驅 物及由該聚醯亞胺前驅物所得之聚醯亞胺所組成組群之至 少一種化合物之圖像形成用底層膜組成物。再者,有關使 用前述組成物所得之硬化膜(圖像形成用底層膜、電極圖 型形成用底層膜、有機電晶體用閘極絕緣膜)以及使用其 硬化膜之電子裝置。 以下加以詳細說明。 [聚醯亞胺前驅物及由該聚醯亞胺前驅物所得之聚醯亞胺] 本發明爲一種圖像形成用底層膜組成物,其含有選自 由以下述式(1)及(1 a)表示之結構單位之聚醯亞胺前驅物及 使該聚醯亞胺前驅物經脫水閉環所得之聚醯亞胺所組成組 -12- 201002762 群中之至少一種化合物: [化6]HaN-B^Ha (18) (wherein, A, B1 and B2 are the same as defined in the above formulas (1) and (la)). The fifth object of the present invention is to use the underlayer film for image formation obtained by using the underlayer film composition for image formation according to any one of the first object to the fourth object, and to use the first object to the fifth object. The underlayer film for electrode pattern formation obtained by the underlayer film composition for image formation described in any of the above. The seventh object is the gate insulating film for an organic transistor obtained by using the underlayer film composition for image formation described in any of the first to fifth aspects. The eighth object is an organic transistor obtained by using a gate insulating film for an organic transistor described in the seventh object. [Effect of the Invention] The underlayer film composition for image formation containing at least one compound selected from the group consisting of a polyimide intermediate and a polyimine obtained from the polyimide precursor is used. The film formed therefrom can be made to change the hydrophilicity of the film by changing the contact angle of the image forming liquid which is used as a main solvent with a solvent having a low surface tension by irradiation with ultraviolet rays. -11 - 201002762 By using these characteristics, an underlayer film can be formed which can form an image of a functional material such as an electrode. Further, the cured film formed of the composition of the present invention can form an underlayer film for image formation of a dielectric ratio cylinder. The underlayer film for image formation which is more than a dielectric property can also be used as a gate insulating film for an organic transistor. Further, the underlayer film for image formation having a high electric current rate can lower the organic electrocrystal, and the voltage is 0. Further, the cured film formed by the composition of the present invention can be coated not only by the inkjet method. The formation liquid can be applied by various methods such as spin coating or dipping, and is therefore an effective material in terms of productivity. [Embodiment] The present invention relates to an image forming underlayer comprising at least one compound selected from the group consisting of a polyimine precursor having a novel structure and a polyimine obtained from the polyimide precursor. Membrane composition. Further, the cured film (the underlayer film for image formation, the underlayer film for electrode pattern formation, the gate insulating film for an organic transistor) obtained by using the above composition, and an electronic device using the cured film. The details will be described below. [Polyimide precursor and polyimine obtained from the polyimide precursor] The present invention is an underlayer film composition for image formation which is selected from the following formulas (1) and (1a) And at least one compound of the group consisting of the polyimine precursor of the structural unit and the polyimine obtained by subjecting the polyimine precursor to dehydration ring closure to form a group of -12-201002762: [Chem. 6]
⑴ (1a) (式中’ A表示4價有機基’ B1表示以前述式(2)表示之至 少一種2價有機基’ B2表示2價有機基,R1、R2、Rla、 R2a分別獨立表示氫原子或一價有機基,η爲式(1)表示之 結構單位之合計莫耳數’ m爲式(la)表示之結構單位之合 計莫耳數,η與m分別表示正整數且滿足〇 〇1$n/(n + m)s〇.3) 〇 上述式(1)及式(la)中,A所表示之有機基之構造只要 爲4價有機基則無特別限制。又,選自以式(1 )及式(1 a)所 表示之聚醯亞胺前驅物及由該聚醯亞胺前驅物所得之聚醯 亞胺所組成組群之至少一種化合物中,A所表示之有機基 之結構可爲一種,亦可混合複數種。 A所表示之有機基之具體例,可舉例有下述式A-1至 A-36之有機基: -13- 201002762 [化7] (ΑΊ] tA*2】 【Α·3】 [A4】 知:8: :mx :axc(1) (1a) (wherein A represents a tetravalent organic group 'B1 represents at least one divalent organic group represented by the above formula (2) 'B2 represents a divalent organic group, and R1, R2, Rla, and R2a each independently represent hydrogen The atom or the monovalent organic group, η is the total number of moles of the structural unit represented by the formula (1) 'm is the total number of moles of the structural unit represented by the formula (la), and η and m respectively represent a positive integer and satisfy 〇〇 1$n/(n + m)s〇.3) In the above formula (1) and formula (la), the structure of the organic group represented by A is not particularly limited as long as it is a tetravalent organic group. Further, in at least one compound selected from the group consisting of a polyimine precursor represented by the formula (1) and the formula (1 a) and a polyimine obtained from the polyimide precursor, A The structure of the organic group represented may be one type or a plurality of types. Specific examples of the organic group represented by A may be exemplified by the following organic groups of the formulae A-1 to A-36: -13- 201002762 [Chemical 7] (ΑΊ] tA*2] [Α·3] [A4] Know: 8: :mx :axc
【Α·6】 [A-6] 【A.7】 【A-8I χΛχ xirSa χΛχ [A-9] [A-10] [A-11] [化8] X每货I! ^ [A-12】.【A-131 【A-14】 【A-15J 【A-16】 【A-17】[Α·6] [A-6] [A.7] [A-8I χΛχ xirSa χΛχ [A-9] [A-10] [A-11] [Chem. 8] XEvery item I! ^ [A- 12].【A-131 【A-14】 【A-15J 【A-16】 【A-17】
众XX 【Α·18 】[Α>19] [Α-20] [ Α-21 ] [ Α-22 ]【Α·23 】 取:πΤπ: :τφΤ〇:災 [Α-24] [Α-25] [Α·26】 【Α·27】XX [Α·18][Α>19] [Α-20] [ Α-21 ] [ Α-22 ][Α·23 】 Take: πΤπ: :τφΤ〇: Disaster [Α-24] [Α-25 ] [Α·26] [Α·27]
XX: / 【Α·33] [Α-34] 【Ads】 [Α-36] 上述式Α-1至Α-3 6係依據作爲圖像形成用底層膜時 所要求之特性加以適當選擇。 例如,上述式Α·1至Α-36中,Α-1至Α-11於含有以 -14- 201002762 式(1)及式(la)表示之結構單位之聚醯亞胺前驅物成爲聚Μ 亞胺時,由於芳香族環係直接鍵結於醯亞胺環上,故認爲 絕緣性降低(滲漏電流較大),但具有相較於脂肪族環直接 鍵結至醯亞胺環上時其比介電率較高之特徵。 另一方面,Α-12至Α-35由於於基內具有脂環結構, 故不僅絕緣性高(滲漏電流較少),且由於後述之接觸角變 化所必要之可使紫外線照射量減少之觀點觀之亦爲較佳, 尤其是Α-12至Α-15最佳。 又,Α-17 、 Α-27 、 Α-29 、 Α-30 、 Α-31 、 Α-32 及 Α-36 可使接觸角變化所必要之可使紫外線照射量減少,且成爲 聚醯亞胺之際於溶劑中之溶解性亦高故而最佳。又,就提 高溶解性以及減低親疏水性變化所必要之紫外線照射量之 目的而言,亦可組合使用複數種類之具有脂環結構之4價 有機基。 上述式(1)中,Β1爲具有氟烷基之2價有機基,具體 爲以下述式(2)表示之至少一種2價有機基: [化9] -〇τΧι、χ〆⑺ (式中,X!表示單鍵、-0-、-COO-、-oco-、-CONH-、-CH20- ’ X2表示碳原子數3至18之2價有機基,R3表示碳原子 數2至12之全氟烷基)。 -15- 201002762 上述R3所表示之氟烷基雖表面自由能小而可賦予高 的撥水性,但基於碳原子數小於2則無法獲得高的撥水性 ,且碳原子數若過長則不僅撥水性的控制變困難,且比介 電率變低之理由,因此碳原子數較好爲2以上至12,更好 爲4至8。 又,氟含量增加雖可獲得更高之撥水性,但長鏈烷基 全部經氟化之結構,反而變得會引起比介電率大幅降低。 因此,藉由使用不含有氟原子之伸烷基等之碳鏈作爲 間隔基(式(2)中之X2),可抑制比介電率降低且可獲得高 的撥水性。 X2爲碳原子數3至18之2價有機基,更好爲碳原子 數6至18,最好爲碳原子數9至18之2價有機基。 X2只要是碳原子數3至1 8之2價有機基則結構無特 別限制’但較好選自具有伸烷基、芳香族環或脂肪族環或 兩者之2價烴基。 式(2)中’上述χ2可直接鍵結至苯環亦可透過鍵結基 鍵結。亦即,於式(2)中,Χι可舉例爲單鍵、-〇-、-(:〇〇- 、-OCO-、_c〇NH-、-CH2〇-。 上述式(2)所表示之2價有機基之Βι具體例,舉例有 下述式(12)至(15): -16 - 201002762 [化 10] 〇^CH2)k(CF2),CF3 〇Y〇-(CH2)k(CF2),CF3 k«3~18,1=1-11 (12) 〇Y〇-Q-iCH2)k{CF2)ICF3 J〇T k*1~12fM~11 (14) k*3~18,N1~11 (13) °Y〇~(3^CH2)k(CF2)ICF3 k«1-12, Ι=1Ί1 (15) 又’表示親水性-疏水性之變化之接觸角變化,認爲 係藉由紫外線照射使式(1)中B 1之含氟側鏈分解所引起。 除此之外,已知以前述A表示之4價有機基亦藉由紫外線 而分解並使接觸角大幅變化(專利文獻1 )。 前述通式(1)中,B1表示之具有氟烷基之2價有機基( 以式(2)表示之基)即使爲少量亦可賦予高的撥水性。然而 ’含量過多時則比介電率降低且因紫外線照射引起之親疏 水性變化量亦少,故而並用以下述B2表示之2價有機基 〇 上述式(la)中’ B2爲2價有機基’較好爲滿足下述要 件之有機基。 以往’爲賦予撥水性目的而導入有長鏈側鏈,但如前 述’ B1基內之氟院基於少量亦可賦予高的撥水性,故可降 低長鏈側鏈之導入比例。 因此’由賦予撥水性’亦即降低表面自由能之觀點觀 之,氟院基以外之長鏈院基並無必要,反而會弓丨起比介電 率降低故而較好不含有。 -17- 201002762 又,長鏈側鏈之導入比例減低可使接觸角變化部位( 酸酐成分)之密度變高,由可期待感度提高之觀點而霄亦 較佳。本說明書中,所謂感度,係表示每曝光量(紫外線 照射量)之由疏水性轉變成親水性之變換程度。 亦即,以B2表示之2價有機基,由滿足上述條件, 接著有效率地吸收紫外線、效率良好地進行接觸角變化之 觀點而言,較好具有芳香族環。例如,較好爲以下述式(3 ) 至(5)表示之有機基。XX: / [Α·33] [Α-34] [Ads] [Α-36] The above formulas Α-1 to Α-3 6 are appropriately selected depending on the characteristics required as the underlayer film for image formation. For example, in the above formulas Α1 to Α-36, Α-1 to Α-11 are polyfluorene precursors having a structural unit represented by the formulas (1) and (la) of -14 to 20,072,062 In the case of an imine, since the aromatic ring system is directly bonded to the quinone ring, it is considered that the insulating property is lowered (the leakage current is large), but it is directly bonded to the quinone ring in comparison with the aliphatic ring. It is characterized by a higher dielectric ratio. On the other hand, since Α-12 to Α-35 have an alicyclic structure in the base, it is not only highly insulating (leakage current is small), but also the amount of ultraviolet ray irradiation can be reduced by the change of the contact angle described later. The point of view is also better, especially Α-12 to Α-15 is the best. In addition, Α-17, Α-27, Α-29, Α-30, Α-31, Α-32 and Α-36 can change the contact angle and reduce the amount of ultraviolet radiation, and become polyimine It is also preferable because the solubility in the solvent is also high. Further, for the purpose of improving the solubility and reducing the amount of ultraviolet radiation necessary for the change in the hydrophilicity and hydrophobicity, a plurality of kinds of tetravalent organic groups having an alicyclic structure may be used in combination. In the above formula (1), Β1 is a divalent organic group having a fluoroalkyl group, and specifically, at least one divalent organic group represented by the following formula (2): [Chemical Formula 9] -〇τΧι, χ〆(7) , X! represents a single bond, -0-, -COO-, -oco-, -CONH-, -CH20- 'X2 represents a divalent organic group having 3 to 18 carbon atoms, and R3 represents a carbon number of 2 to 12 Perfluoroalkyl). -15- 201002762 The fluoroalkyl group represented by the above R3 has a low surface free energy and can impart high water repellency. However, if the number of carbon atoms is less than 2, high water repellency cannot be obtained, and if the number of carbon atoms is too long, not only the dialing number is not long. The reason why the water-based control becomes difficult and the specific dielectric ratio becomes low, the number of carbon atoms is preferably from 2 or more to 12, more preferably from 4 to 8. Further, although the fluorine content is increased, a higher water repellency can be obtained, but the long-chain alkyl group is completely fluorinated, and the ratio of the dielectric constant is greatly lowered. Therefore, by using a carbon chain such as an alkylene group which does not contain a fluorine atom as a spacer (X2 in the formula (2)), it is possible to suppress a decrease in specific dielectric constant and obtain high water repellency. X2 is a divalent organic group having 3 to 18 carbon atoms, more preferably 6 to 18 carbon atoms, and most preferably a valent organic group having 9 to 18 carbon atoms. X2 is not particularly limited as long as it is a divalent organic group having 3 to 18 carbon atoms, but is preferably selected from divalent hydrocarbon groups having an alkylene group, an aromatic ring or an aliphatic ring or both. In the formula (2), the above oxime 2 may be directly bonded to the benzene ring or may be bonded through a bonding group. That is, in the formula (2), Χι can be exemplified by a single bond, -〇-, -(:〇〇-, -OCO-, _c〇NH-, -CH2〇-. represented by the above formula (2) Specific examples of the divalent organic group are exemplified by the following formulas (12) to (15): -16 - 201002762 [化10] 〇^CH2)k(CF2), CF3 〇Y〇-(CH2)k (CF2 ), CF3 k«3~18,1=1-11 (12) 〇Y〇-Q-iCH2)k{CF2)ICF3 J〇T k*1~12fM~11 (14) k*3~18,N1 ~11 (13) °Y〇~(3^CH2)k(CF2)ICF3 k«1-12, Ι=1Ί1 (15) and 'represents the change in contact angle of hydrophilicity-hydrophobicity. It is caused by decomposition of the fluorine-containing side chain of B 1 in the formula (1) by ultraviolet irradiation. In addition, it is known that the tetravalent organic group represented by the above A is also decomposed by ultraviolet rays and the contact angle is largely changed (Patent Document 1). In the above formula (1), the divalent organic group having a fluoroalkyl group (the group represented by the formula (2)) represented by B1 can impart high water repellency even in a small amount. However, when the content is too large, the dielectric constant is lowered and the amount of hydrophilicity change due to ultraviolet irradiation is also small. Therefore, the divalent organic group represented by the following B2 is used. In the above formula (la), 'B2 is a divalent organic group' It is preferably an organic group which satisfies the following requirements. Conventionally, a long-chain side chain has been introduced for the purpose of imparting water repellency. However, the fluorine-based compound in the above-mentioned B1 group can impart high water repellency based on a small amount, so that the introduction ratio of long-chain side chains can be reduced. Therefore, from the viewpoint of imparting water repellency, that is, reducing the surface free energy, it is not necessary to use a long-chain base other than the fluorine-based base. Instead, it is less likely to be contained than the lower dielectric constant. -17-201002762 Further, the introduction ratio of the long-chain side chain is reduced, so that the density of the contact angle change portion (anhydride component) is increased, and it is preferable from the viewpoint that the sensitivity can be expected to be improved. In the present specification, the sensitivity refers to the degree of change from hydrophobicity to hydrophilicity per exposure amount (ultraviolet irradiation amount). In other words, the divalent organic group represented by B2 preferably has an aromatic ring from the viewpoint of satisfying the above conditions, and then efficiently absorbing ultraviolet rays and efficiently changing the contact angle. For example, an organic group represented by the following formulas (3) to (5) is preferred.
(式中,Y1分別獨立表示單鍵、醚鍵、酯鍵、硫醚鍵、醯 胺鍵、碳原子數1至3之可具有分支結構之伸院基’或碳 原子數1至3之可具有分支結構之伸烷二氧基’ γ2表示單 鍵、醚鍵、酯鍵、硫醚鍵、醯胺鍵,r4分別獨立表示氫原 子、甲基、乙基、三Μ甲基,R5表不氫原子甲基、二氟 甲基,R6表示伸甲基、伸乙基,j分別獨表示〇或 上述式(3)至(5)所表示之B2之具體例’舉例爲下述B- 1至B-23之2價有機基。 -18- 201002762 [化 12] 令β办(wherein Y1 independently represents a single bond, an ether bond, an ester bond, a thioether bond, a guanamine bond, a pendant group having a branched structure of 1 to 3 carbon atoms or a carbon number of 1 to 3) The alkylenedioxy group γ2 having a branched structure represents a single bond, an ether bond, an ester bond, a thioether bond, or a guanamine bond, and r4 independently represents a hydrogen atom, a methyl group, an ethyl group, a trimethyl group, and R5 represents A hydrogen atom is a methyl group or a difluoromethyl group, and R6 represents a methyl group and an ethyl group. Each of j is a specific example of B2 represented by the above formulas (3) to (5), and is exemplified by the following B-1. To the B-23 two-valent organic base. -18- 201002762 [Chemical 12]
[Β-1] [Β-2] [Β-3] [Β-4] [Β-5] ΙΒ-6][Β-1] [Β-2] [Β-3] [Β-4] [Β-5] ΙΒ-6]
【Β-21〗 [Β-22】 F3C cf3 xxQ^xb<0xr 尤其,Β-2、Β-3、Β-5、Β-10、Β-13爲溶解性高而可 製造溶解性高之可溶性聚醯亞胺故而更佳。 又’以Β2表示之2價有基,由溶解性、曝光量減低 等之觀點而言,亦可組合兩種以上而使用。又,在不降低 比介電率之範圍內,亦可使用具有長鏈烷基側鏈之其他2 -19- 201002762 價有機基。 如前述,上述通式(1)中,B1基內所含之氟烷基’由 於若過多則引起比介電率降低及因紫外線照射引起之親疏 水性變化量之降低,故倂用以上述B2表示之2價有機基 〇 但,氟烷基之含量若太少’則未曝光部之撥水性變低 ,無法使表面張力低之圖像形成液圖型化。 因此,B1與B2之含有比例,亦即式(1)中表示之η與 式(la)中表示之m的比例較好在〇.〇l$n/(n + m)<0.1之範 圍,最好在〇.〇lSn/(n + m)<0.06之範圍。 《聚醯亞胺前驅物之製造方法》 含有以前述式(1)及式(la)表示之結構單位之聚醯亞胺 前驅物之獲得,可使以下述式(16)表示之四羧酸二酐成分 與下述式(17)及(18)表示之二胺成分在有機溶劑中混合之 方法簡便製得。又,該等四羧酸二酐成分及二胺成分分別 可使用一種或兩種以上。 [化 14][Β-21] [Β-22] F3C cf3 xxQ^xb<0xr In particular, Β-2, Β-3, Β-5, Β-10, Β-13 are highly soluble and can produce solubility with high solubility. Polyimine is therefore preferred. Further, the two-valent group represented by Β2 may be used in combination of two or more kinds from the viewpoints of solubility and reduction in exposure amount. Further, other 2 -19 to 201002762 valent organic groups having a long-chain alkyl side chain can also be used without lowering the specific dielectric constant. As described above, in the above formula (1), if the fluoroalkyl group contained in the B1 group is too large, the specific dielectric constant is lowered and the amount of change in the hydrophilicity due to ultraviolet irradiation is lowered, so that the above B2 is used. When the content of the fluoroalkyl group is too small, the water repellency of the unexposed portion is lowered, and the image forming liquid having a low surface tension cannot be patterned. Therefore, the ratio of the ratio of B1 to B2, that is, the ratio of η expressed in the formula (1) to m expressed in the formula (la) is preferably in the range of 〇.〇l$n/(n + m) < Preferably, it is in the range of 〇.〇lSn/(n + m) < 0.06. <<Method for Producing Polyimine Precursor>> The polyimine precursor containing the structural unit represented by the above formula (1) and formula (la) is obtained, and the tetracarboxylic acid represented by the following formula (16) can be obtained. The dianhydride component and the diamine component represented by the following formulas (17) and (18) are simply mixed in an organic solvent. Further, one type or two or more types of the tetracarboxylic dianhydride component and the diamine component may be used. [Chem. 14]
(16) H2N-Bi-NH2 (17) H2N-B2-NH2 (18) (式中,A爲4價有機基,B1爲以前述式(2)表示之2價有 -20- 201002762 機基,B2爲B1以外之2價有機基)。 以上述式(1 6)表示之四羧酸二酐成分中,以A表示之 4價有機基之具體例’舉例有上述式A-1至A·36所示者 〇 以上述式(17)及(18)表示之二胺成分中’ B1爲含氟院 基之2價有機基’具體爲以前述式(12)至(15)表示者。又 ,以B2表示之2價有機基之具體例舉例有上述式B-1至 B-23所示者。 如前述所示,若A較好爲含有多個含脂肪族環之4價 有機基,亦即,四羧酸二酐成分較好爲脂肪族酸二酐之比 例較多者。 此係由於,使用芳香族酸酐製造聚醯亞胺前驅物,作 成硬化膜時,若對該硬化膜施加高電場,則絕緣性顯著降 低,但同樣地脂肪族酸酐於高電場之絕緣性優異。 例如有機電晶體之作動電壓大體上成爲1 MV/cm左右 ,於該用途之情況,由絕緣性之觀點觀之,宜使用脂肪族 酸酐作爲聚醯亞胺前驅物之原料。 至於使上述四羧酸二酐成分與二胺成分於有機溶劑中 混合之方法,舉例有將二胺成分分散或溶解於有機溶劑中 之溶液予以攪拌,將四羧酸二酐直接添加或分散或溶解於 有機溶劑後添加之方法;相反地於將四羧酸二酐成分分散 或溶解於有機溶劑中之溶液中添加二胺成分之方法;將四 羧酸二酐成分與二胺成分交互添加之方法等。 又’四羧酸二酐成分與二胺成分爲複數種化合物,可 -21 - 201002762 將該等複數種成分以預先混合之狀態進行聚合反應,於個 別依序進行聚合反應亦可。 於本發明所用之上述聚醯亞胺前驅物係由上述式(16) 表示之四羧酸二酐成分與以上述式(17)及(18)表示之二胺 製造時’兩成分之調配比’亦即(四羧酸二酐成分之總莫 耳數):(二胺成分之總莫耳數)較好爲1 : 〇 . 5至1:1.5。 與通常的聚縮合反應相同,該莫耳比若越接近1 ·· 1,則所 生成之聚醯亞胺前驅物之聚合度越大,分子量增加。 於前述聚醯亞胺前驅物之製造方法中,使四羧酸二酐 成分與二胺成分於有機溶劑中反應時之溫度通常爲-20至 1 5 (TC,較好爲〇至8 0 °C。 反應溫度若設定於較高溫,則聚合反應迅速進行完畢 ,但若過高則有無法獲得高分子量之聚醯亞胺前驅物之情 況。 又,於有機溶劑中進行聚合反應中,溶劑中之兩成分 (四羧酸二酐成分及二胺成分)之固體成分濃度並未特別限 制,但若溫度過低’則難以獲得高分子量之聚醯亞胺前驅 物,溫度若過高則反應液之黏度變得過高’變成難以均一 攪拌,故較好爲1至50質量% ’更好爲5至30質量% ° 聚合反應初期以高濃度進行’於生成聚合物(聚醯亞胺前 驅物)之同時’於隨後追加有機溶劑亦無妨。 上述反應時所用之有機溶劑’只要可溶解所生成之聚 醯亞胺前驅物則無特別限制’若舉其具體例’則可舉例爲 Ν,Ν-二甲基甲醢胺、N,N_二甲基乙醋胺、N_甲基-耻略 -22- 201002762 啶酮、N -甲基己內醯胺、二甲基亞砸、四甲基脲、吡啶、 二甲基楓、六甲基亞楓' γ-丁內酯等。該等可單獨使用或 亦可混合兩種以上使用。再者,即使無法溶解聚醯亞胺前 驅物之溶劑’只要在不使所生成之聚醯亞胺前驅物析出之 範圍內,亦可混合於上述溶劑中。 含有於上述所得之聚醯亞胺前驅物之溶液,可直接使 用於調製後述之圖像形成底層膜塗佈液。又,聚醯亞胺前 驅物亦可於水、甲醇、乙醇等之弱溶劑中沉澱單離並回收 後使用。 《轉換成聚醯亞胺》 具有以通式(1)及通式(la)表示之結構單位之聚醯亞胺 前驅物可藉由脫水閉環成爲聚醯亞胺。該醯亞胺化反應之 方法並無特別限制,但使用鹼性觸媒與酸酐之觸媒醯亞胺 化於醯亞胺化反應時易引起聚醯亞胺分子量且醯亞胺化率 易於控制故而較佳。 觸媒醯亞胺化可藉由使上述聚醯亞胺化前驅物於有機 溶劑中,在鹼性觸媒及酸酐存在下,攪拌1至1 〇 〇小時而 進行。 且此處,聚醯亞胺化前驅物亦可直接(未單離)使用藉 由使上述四羧酸二酐成分與二胺成分聚合而得之含有聚醯 亞胺前驅物之溶劑。 作爲鹼性觸媒,可舉例爲例如吡啶、三乙胺、三甲胺 、三丁胺、三辛胺等。其中,吡啶具有適於反應進行之鹼 -23- 201002762 性故而較佳。 作爲酸酐可舉例有乙酸酐、苯偏三酸酐、均苯四酸酐 等。其中,乙酸酐於醯亞胺化結束後,可使所得聚醯亞胺 純化變容易故而較佳。 作爲有機溶劑可使用前述聚醯亞胺前驅物聚合反應時 所用之溶劑。 觸媒醯亞胺化時之反應溫度較好爲-20至250 °C,更好 爲0至1 8 0 °C。反應溫度若設定於高溫則醯亞胺化訊速進 行,但若過高則有聚醯亞胺分子量降低之情況。 鹼性觸媒之量,相對於前述聚醯亞胺前驅物中酸醯胺 基較好爲0.5至30莫耳倍,更好爲2至20莫耳倍。又, 酸酐之量,相對於前述聚醯亞胺前驅物中酸醯胺基較好爲 1至50莫耳倍,更好爲3至30莫耳倍。 藉由調整上述反應溫度及觸媒量可控制所得聚醯亞胺 之醯亞胺化率。 如以上所得之溶劑可溶性聚醯亞胺之反應溶液’雖可 直接使用於後述閘極絕緣膜之製作,但由於反應液中含有 醯亞胺化觸媒等故較好將聚醯亞胺純化、回收、洗淨後使 用於膜之製作。 聚醯亞胺之回收可藉由將反應液加入攪拌中之弱溶劑 使聚醯亞胺沉澱,並將其過濾之簡便方法。 作爲此時使用之弱溶劑並無特別限制’但可例示爲甲 醇、己院、庚垸、乙醇、甲苯、水等。將丨几殿過濾回收後 ,較好以上述弱溶劑予以洗淨。 -24- 201002762 所回收之聚醯亞胺可在常壓或減壓下,在常溫或加熱 乾燥成爲聚醯亞胺粉末。 亦可進而將此聚醯亞胺粉末溶解於良好溶劑中,於弱 溶劑中再沉澱重複此操作2至1 0次,可使聚合物中之雜 質變得更少。 此時所用之良好溶劑可舉例爲Ν,Ν-二甲基甲醯胺、 Ν,Ν -二甲基乙醯胺、2 -吡咯啶酮、Ν -甲基-2 -吡咯啶酮、Ν -乙基-2-吡咯啶酮、Ν-乙烯基-2-吡咯啶酮、Ν-甲基己內醯 胺、二甲基亞碾、四甲基脲、γ-丁內酯等。該等可單獨使 用亦可混合使用。 又,作爲再沉澱所用之弱溶劑若使用醇類、酮類、烴 等之3種以上之弱溶劑則可更提高純化效果。 [圖像形成用底層膜組成物] 本發明之圖像形成用底層膜組成物爲含有前述聚醯亞 胺前驅物及/或前述聚醯亞胺以及溶劑,進而可依據需要 含有後述之交聯劑或界面活性劑等之組成物。 本發明之圖像形成用底層膜組成物中所用之前述聚醯 亞胺前驅物及/或聚醯亞胺之分子量,就操作容易性、膜 形成時之耐溶劑性等之安定性觀點觀之,期望使用重量平 均分子量(由GPC測定之結果)較好爲2,000至200,000者 ,更好使用5,000至50,000者。 使用本發明之圖像形成用底層膜組成物製作硬化膜, 並照射紫外線時,由於與親疏水性之變化量有關之聚醯亞 -25- 201002762 胺前驅物與聚醯亞胺之間並無太大差異,故當所得硬化膜 可提供此方面之重點時,醯亞胺化率並未特別限制。 但,藉由使用聚醯亞胺,就對應於塑膠基板而可在較 低溫燒成(1 80°C以下)下獲得信賴性高之膜之方面而言,聚 醯亞胺之極性相較於聚醯亞胺前驅物極低,就可獲得使@ 外線照射前之水接觸角變高(疏水性高)方面等之優點,故 而更好使用聚醯亞胺。 本發明之圖像形成用底層膜組成物中,假設形成作爲 主要用途之有機電晶體用電極,則不僅要求作爲圖像形成 用底層膜之機能且亦要求高的絕緣性。 如此,以絕緣性爲重點而使用硬化膜(例如閛極絕緣 膜)時,較好將聚醯亞胺前驅物醯亞胺化之聚醯亞胺直接 溶解於溶劑中,成爲圖像形成用底層膜組成物。 此時,若聚西亞胺率高則溶劑溶解性降低,但在不損 及溶解性之範圍內醯亞胺化率越高越好,具體而言爲80% 以上,更好爲90%以上。 又,本發明中,所謂醯亞胺化率,係指將聚醯亞胺溶 解於d6-DMSO(二甲基亞碾-d6)中’測定1H-NMR,由醯胺 質子數與芳香族質子數之比例’求得未醯亞胺化中殘存之 醯胺酸比例而算出醯亞胺化率者。 本發明之圖像形成用底層膜組成物中所用之溶劑,只 要可溶解聚醯亞胺前驅物或聚醯亞胺則無特別限制,其例 舉例爲N,N-二甲基甲醯胺、Ν,Ν·二甲基乙醯胺、2-吡咯啶 酮、Ν ·甲基-2 -吡咯啶酮、Ν -乙基· 2 -吡咯啶酮、Ν _乙烯基- -26- 201002762 2- 吡咯啶酮、N -甲基己內醯胺、二甲基亞楓、四甲基脲、 吡啶、γ·丁內酯等之良好溶劑。該等可單獨使用亦可混合 使用,再者,亦可於前述良好溶劑中混合醇類、酮類、烴 類等之弱溶劑而使用。 本發明之圖像形成用底層膜組成物中,聚醯亞胺前驅 物及/或聚醯亞胺之合計質量比例,只要聚醯亞胺前驅物 及/或聚醯亞胺可均一溶解於溶劑中則無特別限定,例如 可爲1至3 0質量%,又例如5至2 0質量%。 本發明之圖像形成用底層膜組成物之調製方法並無特 別限制,可直接使用含有藉由上述四羧酸二酐成分與二胺 成分聚合而得之聚醯亞胺前驅物之溶液或亦可直接使用該 溶劑所得之聚醯亞胺之反應溶液。 又,本發明之圖像形成用底層膜組成物中,爲提高該 組成物與基板之密著性,只要不損及本發明效果可進而含 有交聯劑。 作爲上述交聯劑,可舉例爲含有官能基矽烷之化合物 或含有環氧基之化合物,具體而言,可舉例爲3-胺基丙基 三甲氧基矽烷、3-胺基丙基三乙氧基矽烷、2-胺基丙基三 甲氧基矽烷、2_胺基丙基三乙氧基矽烷、Ν-(2-胺基乙基)- 3- 胺基丙基三甲氧基矽烷、Ν-(2-胺基乙基)-3-胺基丙基甲 基二甲氧基矽烷、3-脲基丙基三甲氧基矽烷、3-脲基丙基 三乙氧基矽烷、N-乙氧羰基-3-胺基丙基三甲氧基矽烷、 N-乙氧羰基-3-胺基丙基三乙氧基矽烷、N-三甲氧基矽烷 基丙基三伸乙三胺、N-三乙氧基矽烷基丙基三伸乙基三胺 -27- 201002762 、10-三甲氧基矽烷基_1,4,7-三氮雜癸烷、10-三乙 烷-1,4,7-三氮雜癸烷、9-三甲氧基矽烷基-3,6-二氮 乙酸酯、9-三乙氧基矽烷基-3,6-二氮雜壬基乙酸酯 基-3-胺基丙基三甲氧基矽烷、N -苄基-3 -胺基丙基 基矽烷、N -苯基-3-胺基丙基三甲氧基矽烷、N -苯; 基丙基三乙氧基矽烷、N-雙(氧伸乙基)-3-胺基丙基 基矽烷、N-雙(氧伸乙基)-3-胺基丙基三乙氧基矽烷 醇二縮水甘油醚、聚乙二醇二縮水甘油醚、丙二醇 甘油醚、三丙二醇二縮水甘油醚、聚丙二醇二縮水 、新戊二醇二縮水甘油醚、1,6-己二醇二縮水甘油 油二縮水甘油醚、2,2-二溴新戊二醇二縮水甘油醚 縮水甘油基-2,4-己二醇、N,N,N’,N’-四縮水甘油基 甲苯二胺、1,3-雙(Ν,Ν-二縮水甘油基胺基甲基)環 叱比^[’,1^’-四縮水甘油基-4,4’-二胺基二苯基甲烷等 物。 該等可單獨使用一種亦可組合兩種以上使用。 使用該偶合劑時,其含量相對於圖像形成用底 成物100質量份,較好添加0.1至30質量份,更 至20質量份。 再者,本發明之圖像形成用底層膜組成物中, 該組成物之塗佈性、由該組成物所得之膜的膜厚均 表面平滑性,亦可含有界面活性劑。 前述界面活性劑並無特別限制,而可舉例爲例 界面活性劑、矽系界面活性劑、非離子性界面活性 氧基矽 雜壬基 、Ν-苄 三乙氧 _ - 3 -胺 三甲氧 、乙二 二縮水 甘油醚 醚、甘 、6 -四 -間-二 己烷、 之化合 層膜組 好爲1 爲提高 一性或 如氟系 劑等。 -28 - 201002762 至於該種界面活性劑,舉例有例如F TOP EF301、EF303 、EF3 52(JEMUYU(股)製)、MEGAFAX F 1 7 1 ' F 1 7 3、R-3 0 ( 大日本油墨化學工業(股)製)、FLORIDE FC430、FC43 1(住 友 3M(股)製)、ASAHIGUAID AG7 1 0、SURFLON S-3 82、 SC101、SC102、SC103、SC104、SC105、SC106(旭硝子( 股))等。 使用該界面活性劑時,其含量相對於圖像形成用底層 膜組成物中含有之聚合物成分100質量份,較好爲0.01 至2質量份,更好爲0.01至1質量份。 [聚合物摻合物] 本發明之圖像形成用底層膜組成物除了本發明之聚醯 亞胺前驅物及/或聚醯亞胺以外,亦可混合可形成膜之其 他聚合物(例如高絕緣性聚合物),即所謂之聚合物摻合物 形態。 該聚合物摻合物中,藉由調整所含之聚合物(本發明 之聚醯亞胺前驅物、聚醯亞胺及其他聚合物)之結構等, 可在硬化膜形成之際於膜內厚度方向產生各聚合物濃度梯 度,故可利用作爲有用的手段。 例如,由於親水性變化成爲問題者僅有膜表面,故由 此觀點觀之,本發明之具有氟烷基之聚醯亞胺前驅物及/ 或聚醯亞胺只要僅存在於硬化膜上層(表面層)即可。 因此,上述圖像形成用底層膜組成物作爲聚合物摻合 物形態時’作爲本發明之聚醯亞胺前驅物或聚醯亞胺之調 -29- 201002762 配比例爲相對於摻合之聚合物之全質量,爲1質量%至 1 ο 〇質量%。若爲1質量%以下’則所形成之膜最表面之本 發明之聚醯亞胺前驅物或聚醯亞胺變成過少,有圖像形成 能力劣化之虞。 上述聚合物慘合物成爲有用可舉例爲例如尤其要求有 高絕緣性之閘極絕緣膜用途中使用本發明之圖像形成用底 層膜組成物之情況。 用於閘極絕緣膜用途時,該塗佈液要求有對應於 1 8 0 °C以下之燒成溫度、可藉由塗佈成膜、對於有機半導 體塗佈液之耐溶劑性(二甲苯、三甲基苯等之無極性溶劑) 、低吸水率等之數種特性,但由其是有關絕緣性之要求性 能最高。爲達成此高絕緣性,本發明之圖像形成用底層膜 組成物之醯亞胺化率至少爲8 〇 %以上,依據情況亦有要求 90%以上之情況’相對地,若酿亞胺化率超過90%則對溶 劑之溶解度亦有降低之情況。此時,高絕緣性層僅位於該 絕緣膜之最下層,藉由使由本發明之圖像形成用底層膜組 成物所構成之層位於上層,可保有該絕緣膜之高絕緣性且 溶解性問題亦可消解。 如上述’雖可將硬化膜之下層作爲高絕緣層、上層作 爲親疏水性變換層’依此等層依序層合亦可製得,但操作 較繁瑣。 此時,將高絕緣層材料與親疏水性變換層之材料(亦 即本發明之聚醯亞胺前驅物及/或聚聚醯亞胺)混合,此時 ,若使上層材料之極性或分子量設爲比下層者較小者,則 -30- 201002762 將混合液塗佈在基板上並乾燥及在溶劑蒸發期間,上層材 料顯示移行至表面形成層之舉動,故可容易地控制上述濃 度梯度(此處所謂層分離)。 作爲可形成上述下層之高絕緣性膜之形成材料最好者 爲可溶性聚醯亞胺。使用可溶性聚醯亞胺作爲下層材料時 ’由絕緣性之觀點觀之,溶液中之聚醯亞胺之醯亞胺化率 較高較好,至少爲50 %以上,較好爲80 %以上,最好爲 90%以上。 至於可使用作爲下層材料之其他材料舉例有環氧樹脂 、丙烯酸樹脂、聚丙烯、聚乙烯醇 '聚乙烯酚、聚異丁稀 、聚甲基丙烯酸甲酯等之一般有機聚合物。 又,上述聚合物摻合物使用於例如要求有膜厚40 Onm 左右之有機電晶體用途時,設置上層(親疏水性變換層)所 要之本發明之聚醯亞胺前驅物及/或聚醯亞胺之於該聚合 物摻合物中之含有比例,理論上成爲1 %左右,但若太少 則硬化膜表面物性之面內偏離値變大,因此該聚醯亞胺前 驅物及/或聚醯亞胺較好至少含有5%以上。 [塗膜及硬化膜之製造方法] 本發明之圖像形成用底層膜組成物可藉由浸漬法、旋 轉塗佈法、轉印印刷法、輥塗佈法、噴墨法、噴霧法、刷 塗法等,塗佈在聚丙烯、聚乙烯、聚碳酸酯、聚對苯二甲 酸乙二酯、聚醚颯、聚萘二甲酸乙二酯、聚醯亞胺等之通 用塑膠基板或玻璃基板等之上,隨後,藉由加熱板或烘箱 -31 - 201002762 等進行預乾燥,藉此形成塗膜。隨後,藉由對該 加熱處理,形成可使用作爲圖像形成用底層膜或 硬化膜。 上述加熱處理方法並未特別限制,但可舉例 熱板或烘箱,在適當氛圍中,亦即大氣、氮氣等 、真空中等進行之方法。 燒成溫度,由促進聚醯亞胺前驅物之熱醯亞 點觀之,較好爲1 8 0 °C至2 5 0 °C,於塑膠基板上成 觀之,更好爲1 8 0 °C以下。 燒成亦可以兩階段以上之溫度變化進行。階 可更提高所得膜之均一性。 又,製造硬化膜時,由於圖像形成用底層膜 含有聚醯亞胺前驅物及/或聚醯亞胺及上述溶劑 因此可直接使用於對基板之塗佈,但爲調整濃度 膜之平坦性或提高塗佈液對基板之濡濕性、調整 表面張力、極性、沸點等之目的,除上述溶劑以 而添加其他溶劑而使用作爲塗佈液亦可。 此種溶劑之具體例,除上述第2 3頁第二段 劑以外,又可舉例爲乙基溶纖劑、丁基溶纖劑' 醇、丁基卡必醇、乙基卡必醇乙酸酯、乙二醇等 基-2-丙醇、1-乙氧基-2·丙醇、1-丁氧基-2 -丙醇 基-2-丙醇、丙二醇單乙酸酯、丙二醇二乙酸酯 1-單甲基醚-2-乙酸酯、丙二醇-1-單乙基醚-2-乙 丙二醇、2-(2-甲氧基丙氧基)丙醇、2-(2-乙氧基 塗膜進行 絕緣膜之 爲使用加 惰性氣體 胺化之觀 膜之觀點 段性燒成 組成物爲 之形態’ 或確保塗 塗佈液之 外又可進 所述之溶 乙基卡必 ;、1 -甲氧 :、1-苯氧 、丙二醇-酸酯、二 丙氧基)丙 -32- 201002762 醇及2-(2-丁氧基丙氧基)丙醇等之丙二醇衍生物、乳酸甲 酯、乳酸乙酯、乳酸正丙酯、乳酸正丁酯、乳酸異戊酯等 之乳酸衍生物等。該等可單獨使用亦可倂用。 又,自提高圖像形成用底層膜組成物之保存性、塗膜 之膜厚均一性之觀點而言,總溶劑量之20至80質量%較 好爲選自N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲 基-2-啦略陡酮、γ -丁內酯、二甲基亞碾之至少一種溶劑。 圖像形成用底層膜組成物之濃度並無特別限制,但較 好以聚醯亞胺前驅物及聚醯亞胺之固體成分濃度計爲〇. 1 至3 0質量%,更好爲1至1 0質量%。以可依據塗佈裝置 之種類或欲得到之膜厚加以任意設定。 上述製作之本發明之硬化膜使用作爲圖像形成用底層 膜時,膜厚若太薄則紫外線照射後之繪圖性降低,且若太 厚則損及表面均一性。因此,作爲其膜厚,較好爲5nm至 lOOOnm,更好爲 10nm 至 300nm,最好爲 20nm 至 l〇〇nm 〇 又,本發明之硬化膜於絕緣性充分高時,亦可發揮作 爲絕緣膜之機能。此時,該硬化膜係使用作爲於例如有機 FET元件中配置在直接閘極電極上之閘極絕緣膜。此時, 該硬化膜之膜厚爲確保絕緣性,宜具有比上述作爲圖像形 成用底層膜使用時更厚之厚度。其厚度較好爲2〇nm至 lOOOnm,更好爲 50nm 至 800nm,最好爲 l〇〇nm 至 500nm -33- 201002762 [作爲圖像形成用底層膜之使用:圖像形成用電極之製造方法] 對本發明之圖像形成用底層膜以圖型形狀照射紫外線 ’接著藉由塗佈後述之圖像形成液,可製造圖像形成用電 極。 本發明中,對本發明之圖像形成用底層膜以圖型形狀 照射紫外線之方法並無特別限制,可舉例爲例如透過圖型 化有電極圖型之光罩照射之方法,使用雷射光圖型化電極 圖型之方法等。 作爲上述光罩,其材質或形狀並無特別限制,只要是 電極所必要之區域爲紫外線透過性者,其以外之區域爲非 紫外線透過性者即可。 此時,一般可使用具有200nm至500nm範圍之波長 之紫外線予以照設,較好依據所使用之聚醯亞胺種類透過 濾光器等選擇適當波長。具體而言,舉例爲248nm、 2 54nm、3 03 nm、313nm、3 65nm 等之波長。最好爲 248nm 、2 5 4nm。 本發明之圖像形成用底層膜藉由照射紫外線其表面能 會緩緩上升,隨充分照射量而呈飽和。此表面能之上升導 致圖像形成液之接觸角減小,其結果提高紫外線照射部之 圖像形成液之濡濕性。 因此,若於紫外線照射後之本發明圖像形成用底層膜 上塗佈圖像形成液,則沿著於圖像形成用底層膜上以表面 能差所圖型化之圖型形狀,圖像形成液將自我組織地形成 圖型,可獲得任意圖型形狀之電極。 -34- 201002762 爲此’對於圖像形成用底層膜照射之紫外線照射量有 必要照射使圖像形成液之接觸角充分變化之量,但由能量 效率及製造工程之時間縮短等方面而言,較好爲40J/cm2 以下’更好爲20J/cm2以下,最好爲i〇j/cm2以下。 又’圖像形成用底層膜之紫外線照射部與未照射部之 圖像形成液的接觸角差越大則圖型化越容易,使得對複雜 圖型或微細圖型形狀之電極之加工變得可能。使用表面張 力低的溶液時’曝光部與未曝光部之接觸角差爲5。以上較 佳’ 1 〇 °以上更佳’最佳爲2 0 °以上。因此,只要考慮圖像 形成液之塗佈方法、圖像形成液之表面張力、圖像精細度 、膜平坦性而適當最適化即可。 基於同樣理由’圖像形成液之接觸角於紫外線未照射 部較好爲30°以上,紫外線照射部爲20°以下較佳。 本發明中之所謂圖像形成液,爲塗佈於基板上之後, 使其中所含之溶劑蒸發而可使用作爲機能性薄膜之塗佈液 ’舉例爲例如於至少一種溶劑中溶解或均一分散有電荷輸 送性物質者。此處,所謂電荷輸送性意指與導電性同義, 爲電洞輸送性、電子輸送性、電洞及電子之兩電荷輸送性 之任一種。 作爲上述電荷輸送性物質只要是具有可輸送電洞或電 子之導電性即可而無特別限制。作爲其例,舉例有例如金 、銀、銅、鋁等之金屬微粒子或碳黑、富勒烯(fullerene) 類、碳奈米管等之無機材料、或聚噻吩、聚苯胺、聚吡咯 、聚芴及該等之衍生物等之有機π共軛聚合物等。 -35- 201002762 又,爲提高電荷輸送物質之電荷輸送能之目的’亦可 於圖像形成液中進而添加鹵素、路易士酸、質子酸、過渡 金屬化合物(具體例爲 Br2、I2、FeCl3、MoC16、BF4、 AsF6、S04、HN〇4、H2S〇4、聚苯乙烯磺酸等)等之電荷接 受性物質、或鹼金屬、烷基銨離子(具體例爲Li、Na、K 、C s、四伸乙銨、四丁基銨等)等之電荷供給性物質作爲 摻雜物。 作爲圖像形成液之溶劑,只要可使上述電荷輸送性物 質或摻雜物溶解或均一分散者則無特別限制。由正確獲得 電極圖像(圖型)之觀點而言,圖像形成液之表面張力較好 爲25mN/m至50mN/m。表面張力過度低於上述範圍時, 對於紫外線照射部無法顯示充分大的接觸角,又若表面張 力過度高於上述範圍時’紫外線照射部之接觸角變高,紫 外線之照射量變增加故而不佳。 作爲圖像形成液之溶劑雖無特別限制,但可使用醇類 、酮類、醚類、酯類、芳香族烴類、二醇類等之各種有機 溶劑。作爲醇類’舉例有甲醇、異丙醇、正丁醇、異丁醇 、第二丁醇、異戊醇、辛醇等。作爲酮類,舉例有丙酮、 甲基乙基酮、甲基異丁基酮、環己酮·二丙酮醇等。作爲 醚類’舉例有醚·異丙醚、二噁烷、甲基溶纖劑、乙基溶 纖劑、丁基溶纖劑等。作爲醋類,舉例有乙酸乙酯、乙酸 丁酯、乙酸異丁酯、乙酸戊酯、乙酸溶纖劑、脂肪酸甲酯 等。作爲芳香族烴類,舉例有苯、甲苯、二甲苯、三甲基 苯等。 -36- 201002762 作爲脂肪族烴類’舉例有正己烷、異己烷、環己烷、 礦物萜品、正戊烷等。作爲二醇類,舉例有乙二醇、二乙 二醇、丙二醇、二丙二醇、丙二醇單甲醚等。 又’由有機系電荷輸送性物質之溶解性優異之觀點而 言,亦較佳爲N,N-二甲基甲醯胺、n,N-二甲基乙醯胺、2-吡略啶酮、N -甲基-2 -吡咯啶酮、N -乙基-2 -吡咯啶酮、N-乙烯基-2-吡咯啶酮、N -甲基己內醯胺、二甲基亞颯、四 甲基脲等之極性溶劑’但該等較好在對本發明之圖像形成 用底層膜之損傷少的範圍內使用。 又’雖可使用水等之表面張力特別大之溶劑,但較好 添加界面活性劑等調整表面張力。 圖像形成液中電荷輸送性物質之濃度較好爲0.01至 3 0質量%,更好爲0 · 1至1 0質量%,最好爲1至5質量% 〇 本發明之圖像形成液之具體例,舉例有Baytron(註冊 商標)P(聚伸乙二氧基噻吩,拜耳公司製)等之導電性聚合 物溶液、DOTITE XA-9069(藤倉化成公司製)、W4A(住友 電工製)、NPS-J(HARIMA化成公司製)等之銀微粒子分散 液等。 本發明之電極係在本發明之圖像形成用底層膜上塗佈 上述圖像形成液,形成圖像後,使溶劑蒸發而製作。溶劑 蒸發方法並未特別限定,但可使用利用加熱板或烘箱,在 適當氛圍下,亦即大氣、氮氣等惰性氣體、真空中等進行 蒸發,獲得均一成膜面。 -37- 201002762 溶劑蒸發溫度並無特別限制,但較好在40至25 0°C進 行。就維持圖像形成用底層膜形狀及達成膜後均一性之觀 點而言,亦可爲兩階段以上之溫度變化。 由此圖像形成液製作之電極’不但可作爲連接電子裝 置彼此間之配線亦可利用作爲電場效電晶體、雙極性電晶 體、各種二極體、各種感測器等之電子裝置之電極等。 本發明之電子裝置可爲具有在上述本發明之圖像形成 用底層膜上形成之由圖像形成液製作之電極者。 以下雖顯示將本發明之圖像形成用底層膜用於有機 FET元件之例,但本發明不限定於該等。 首先準備在單面上成膜有I TO電極之玻璃基板。較好 基板預先以洗劑、醇、純水等液體進行洗淨’於恰在使用 前進行臭氧處理、氧-電漿處理等之表面處理。於附有ITO 電極之基板上,依據前述[塗膜及硬化膜之製造方法]之順 序形成含有具有以上述通式(1)及式(la)表示之結構單位之 聚醯亞胺前驅物及/或聚醯亞胺之層。層的膜厚由兼具驅 動電壓與電絕緣性而言,較好具有100nm至lOOOnm者。 隨後,使用光罩等,圖型形狀地照射紫外線。 接著將使用PGME等之低表面張力溶劑之圖像形成液 塗佈在圖像形成用底層膜表面上。所塗佈之圖像形成液於 疏水性部(紫外線未照射部)被排斥於親水性部(紫外線照射 部)快速擴展而安定化,經乾燥,形成圖型化之源極及閘 極電極。圖像形成液之塗佈法並未特別限定爲旋轉塗佈法 、澆鑄法,但較好爲易於控制液量之噴墨法或噴霧塗佈法 -38- 201002762 最後,藉由五氮烯(Pentacene)、聚噻吩等之有機半導 體材料成膜而完成有機FET活性層。有機半導體材料之成 膜方法並無特別限制’可舉例爲例如真空蒸鍍或溶液之旋 轉塗佈法、澆鑄法、噴墨印刷法或噴霧塗佈法等。 如上述,所製作之有機FET可大幅削減製作步驟,再 者,由於可製作比遮罩蒸鍍法更短通道之有機FET,故即 使使用低移動度之有機半導體材料作爲活性層時,亦可獲 取大電流。又,作爲對有機電晶體之絕緣膜,可能者爲具 有比介電率爲3.0以上之値之膜。藉由本發明方法所得之 圖像形成用底層膜具有優異之電絕緣性且亦具有高如3 _0 之比介電率,故亦可使用作爲閘極絕緣層(絕緣膜),製造 步驟可更簡略化。 以上述方法作成之有機電晶體之槪略剖面圖示於圖1 實施例 以下列舉實施例更詳細說明本發明,但本發明不限定 於該等者。 [胃2P均分子量及重量平均分子量之測定] 依據以下合成法所得之聚醯亞胺前驅物之數平均分子 量(以下稱爲Μη)以及重量平均分子量(以下稱爲Mw)係藉 由GPC(常溫凝膠滲透層析法)於下述裝置及測定條件下進 -39- 201002762 行測定,作爲聚乙二醇(或聚環氧乙烷)換算値而算出。 GPC裝置:昭和電工(股)製Shodex(註冊商標)(GPC-101) 管柱:昭合電工(股)製Shodex(註冊商標)(KD803、 K D 8 0 5串聯)(16) H2N-Bi-NH2 (17) H2N-B2-NH2 (18) (wherein A is a tetravalent organic group, and B1 is a bivalent -20-201002762 machine group represented by the above formula (2), B2 is a divalent organic group other than B1). In the tetracarboxylic dianhydride component represented by the above formula (16), the specific example of the tetravalent organic group represented by A is exemplified by the above formula (A-1 to A.36), and the above formula (17) And, in the diamine component represented by (18), 'B1 is a divalent organic group which is a fluorine-containing compound base' is specifically represented by the above formulas (12) to (15). Further, specific examples of the divalent organic group represented by B2 include those represented by the above formulae B-1 to B-23. As described above, when A is preferably a tetravalent organic group containing a plurality of aliphatic rings, that is, the tetracarboxylic dianhydride component is preferably a ratio of aliphatic acid dianhydride. In this case, when a polyimide film is produced using an aromatic acid anhydride to form a cured film, when a high electric field is applied to the cured film, the insulating property is remarkably lowered. However, the aliphatic acid anhydride is excellent in insulation properties at a high electric field. For example, the operating voltage of the organic transistor is substantially about 1 MV/cm. In the case of this use, it is preferable to use an aliphatic acid anhydride as a raw material of the polyimide precursor from the viewpoint of insulating properties. As a method of mixing the tetracarboxylic dianhydride component and the diamine component in an organic solvent, a solution in which a diamine component is dispersed or dissolved in an organic solvent is stirred, and tetracarboxylic dianhydride is directly added or dispersed. a method of adding after dissolving in an organic solvent; instead, adding a diamine component to a solution in which a tetracarboxylic dianhydride component is dispersed or dissolved in an organic solvent; and adding a tetracarboxylic dianhydride component and a diamine component Method, etc. Further, the tetracarboxylic dianhydride component and the diamine component are a plurality of compounds, and the plurality of components may be polymerized in a state of being preliminarily mixed, and the polymerization may be carried out in sequence. The polyimine precursor used in the present invention is a compounding ratio of the two components when the tetracarboxylic dianhydride component represented by the above formula (16) and the diamine represented by the above formulas (17) and (18) are produced. That is, (the total number of moles of the tetracarboxylic dianhydride component): (the total number of moles of the diamine component) is preferably 1: 〇. 5 to 1: 1.5. As in the usual polycondensation reaction, the closer the molar ratio is to 1··1, the greater the degree of polymerization of the resulting polyimide precursor and the increase in molecular weight. In the method for producing the polyimine precursor, the temperature at which the tetracarboxylic dianhydride component and the diamine component are reacted in an organic solvent is usually from -20 to 15 (TC, preferably from 〇 to 80 °). C. If the reaction temperature is set to a relatively high temperature, the polymerization reaction is rapidly completed, but if it is too high, a high molecular weight polyimine precursor may not be obtained. Further, in a polymerization reaction in an organic solvent, in a solvent The solid content concentration of the two components (the tetracarboxylic dianhydride component and the diamine component) is not particularly limited, but if the temperature is too low, it is difficult to obtain a high molecular weight polyimine precursor, and if the temperature is too high, the reaction solution is too high. The viscosity becomes too high', and it becomes difficult to uniformly stir, so it is preferably from 1 to 50% by mass. More preferably from 5 to 30% by mass. The polymerization reaction is carried out at a high concentration in the initial stage of the polymerization (polyimine precursor) At the same time, it is also possible to add an organic solvent in the subsequent step. The organic solvent used in the above reaction is not particularly limited as long as it can dissolve the produced polyimide precursor, and the specific example can be exemplified by Ν, Ν -dimethyl methacrylate Indoleamine, N,N-dimethylacetamide, N-methyl-shame-22-201002762 ketone, N-methyl caprolactam, dimethyl hydrazine, tetramethyl urea, pyridine, Dimethyl maple, hexamethyl sulfoxide 'γ-butyrolactone, etc. These may be used singly or in combination of two or more. Further, even if the solvent of the polyimide precursor is not dissolved, as long as it is not The precipitated polyimine precursor may be mixed in the solvent. The solution containing the polyimine precursor obtained above may be directly used in the preparation of the image forming the underlying film. In addition, the polyimide precursor can also be precipitated and isolated in a weak solvent such as water, methanol or ethanol, and used after recycling. "Conversion to polyimine" has the formula (1) and The polyimine precursor of the structural unit represented by (la) may be a polyfluorene ring by dehydration ring closure. The method of the ruthenium imidization reaction is not particularly limited, but a catalyst of an alkaline catalyst and an acid anhydride is used. Imidization in the ruthenium imidization reaction tends to cause the molecular weight of polyimine and the sulfhydrylation rate is easy to control. The ruthenium imidization can be carried out by stirring the above-mentioned polyfluorinated precursor in an organic solvent in the presence of a basic catalyst and an acid anhydride for 1 to 1 hour. The imidization precursor may also be used as a solvent containing a polyimine precursor obtained by polymerizing the above tetracarboxylic dianhydride component and a diamine component directly (not separately). For example, pyridine, triethylamine, trimethylamine, tributylamine, trioctylamine, etc., among which pyridine has a base which is suitable for the reaction, is preferably -23-201002762. The acid anhydride may be exemplified by acetic anhydride and benzoic acid. An acid anhydride, pyromellitic anhydride, etc. Among them, acetic anhydride can be preferably purified by purifying the polyimine after the imidization of the hydrazine. As the organic solvent, the polymerization reaction of the polyimine precursor can be used. Solvent. The reaction temperature at which the catalyst is imidized is preferably from -20 to 250 ° C, more preferably from 0 to 180 ° C. When the reaction temperature is set to a high temperature, the imidization speed is increased, but if it is too high, the molecular weight of the polyimine is lowered. The amount of the basic catalyst is preferably from 0.5 to 30 moles, more preferably from 2 to 20 moles, relative to the acid amide group in the aforementioned polyimide intermediate. Further, the amount of the acid anhydride is preferably from 1 to 50 moles, more preferably from 3 to 30 moles, relative to the acid amide group in the polyimide precursor. The ruthenium imidization ratio of the obtained polyimine can be controlled by adjusting the above reaction temperature and the amount of the catalyst. The reaction solution of the solvent-soluble polyimine obtained as described above can be directly used for the production of the gate insulating film described later. However, since the reaction solution contains a ruthenium-based catalyst, the polyimine is preferably purified. It is recycled and washed and used in the production of membranes. The polyimine is recovered by a simple method in which the reaction solution is added to a weak solvent in a stirred state to precipitate a polyimine and filter it. The weak solvent to be used at this time is not particularly limited, but may be exemplified by methanol, hexanol, gadolinium, ethanol, toluene, water, and the like. After filtering and recovering a few halls, it is better to wash with the above weak solvent. -24- 201002762 The recovered polyimine can be dried at room temperature or under reduced pressure to form a polyimide pigment at normal temperature or under heat. Further, the polyimine powder can be further dissolved in a good solvent, and re-precipitation in a weak solvent is repeated 2 to 10 times to make the impurities in the polymer less. The good solvent to be used at this time may, for example, be hydrazine, hydrazine-dimethylformamide, hydrazine, hydrazine-dimethylacetamide, 2-pyrrolidone, hydrazine-methyl-2-pyrrolidone, hydrazine - Ethyl-2-pyrrolidone, fluorene-vinyl-2-pyrrolidone, hydrazine-methyl caprolactam, dimethyl arylene, tetramethylurea, γ-butyrolactone, and the like. These may be used singly or in combination. Further, when a weak solvent used for reprecipitation is used, three or more kinds of weak solvents such as alcohols, ketones, and hydrocarbons can be used to further improve the purification effect. [The underlayer film composition for image formation] The underlayer film composition for image formation of the present invention contains the polyimine precursor and/or the polyimine and a solvent, and may further contain a crosslink which will be described later as needed. A composition of a agent or a surfactant or the like. The molecular weight of the polyimine precursor and/or polyimine used in the composition for forming an underlayer film for image formation of the present invention is a viewpoint of stability in terms of ease of handling and solvent resistance at the time of film formation. It is desirable to use a weight average molecular weight (result as measured by GPC) of preferably from 2,000 to 200,000, more preferably from 5,000 to 50,000. When the cured film is formed by using the underlayer film composition for image formation of the present invention, and when it is irradiated with ultraviolet rays, there is no difference between the amine precursor and the polyimine which is related to the amount of change in the hydrophilicity. Large differences, so when the resulting cured film can provide the focus of this aspect, the yield of hydrazine is not particularly limited. However, by using polyimine, the polarity of the polyimide can be compared with that of the plastic substrate, which can be obtained at a lower temperature (less than 180 ° C). Since the polyimine precursor is extremely low, the advantage of increasing the contact angle of water before the irradiation of the external line (high hydrophobicity) can be obtained, so that the polyimide is more preferably used. In the underlayer film composition for image formation of the present invention, it is assumed that the electrode for an organic transistor used as a main application is required not only as a function as an underlayer film for image formation but also as a high insulating property. When a cured film (for example, a drain insulating film) is used as the main point of the insulating property, it is preferred that the polyimide which is imidized by the polyimide precursor is directly dissolved in a solvent to form an underlayer for image formation. Membrane composition. In this case, when the polysiane ratio is high, the solvent solubility is lowered. However, the niobium imidization ratio is preferably as high as possible within a range not impairing the solubility, specifically, 80% or more, more preferably 90% or more. In the present invention, the term "imidization ratio" refers to the dissolution of polyimine in d6-DMSO (dimethyl azo-d6). 1H-NMR measurement, the number of protons and aromatic protons The ratio of the number 'calculates the ratio of proline acid remaining in the imidization to calculate the sulfhydrylation rate. The solvent used in the composition of the underlayer film for image formation of the present invention is not particularly limited as long as it can dissolve the polyimide precursor or the polyimine, and is exemplified by N,N-dimethylformamide. Ν,Ν·Dimethylacetamide, 2-pyrrolidone, Ν·methyl-2-pyrrolidone, Ν-ethyl·2-pyrrolidone, Ν _vinyl- -26- 201002762 2- A good solvent such as pyrrolidone, N-methyl caprolactam, dimethyl sulfoxide, tetramethyl urea, pyridine, γ-butyrolactone or the like. These may be used singly or in combination, and may be used by mixing a weak solvent such as an alcohol, a ketone or a hydrocarbon in the above-mentioned good solvent. In the underlayer film composition for image formation of the present invention, the total mass ratio of the polyimide precursor and/or the polyimide may be uniformly dissolved in the solvent as long as the polyimide precursor and/or the polyimide may be uniformly dissolved in the solvent. There is no particular limitation, and for example, it may be 1 to 30% by mass, and for example, 5 to 20% by mass. The method for preparing the underlayer film composition for image formation of the present invention is not particularly limited, and a solution containing a polyimine precursor obtained by polymerizing the above tetracarboxylic dianhydride component and a diamine component may be used as it is or The reaction solution of the polyimine obtained by using the solvent can be used as it is. Further, in the composition for forming an underlayer film for image forming of the present invention, in order to improve the adhesion between the composition and the substrate, a crosslinking agent may be further contained as long as the effects of the present invention are not impaired. The above-mentioned crosslinking agent may, for example, be a compound containing a functional decane or a compound containing an epoxy group, and specific examples thereof include 3-aminopropyltrimethoxydecane and 3-aminopropyltriethoxy Baseline, 2-aminopropyltrimethoxydecane, 2-aminopropyltriethoxydecane, Ν-(2-aminoethyl)-3-aminopropyltrimethoxydecane, hydrazine- (2-Aminoethyl)-3-aminopropylmethyldimethoxydecane, 3-ureidopropyltrimethoxydecane, 3-ureidopropyltriethoxydecane, N-ethoxy Carbonyl-3-aminopropyltrimethoxydecane, N-ethoxycarbonyl-3-aminopropyltriethoxydecane, N-trimethoxydecylpropyltriazine, N-triethyl Oxidylalkylpropyltriethylethylamine-27- 201002762, 10-trimethoxydecyl-1,4,7-triazadecane, 10-triethane-1,4,7-three Azadecane, 9-trimethoxydecyl-3,6-diazoacetate, 9-triethoxydecyl-3,6-diazaindolyl-3-amine Propyltrimethoxydecane, N-benzyl-3-aminopropyl decane, N-phenyl-3-aminopropyltrimethoxydecane, N-benzene; Propyl triethoxy decane, N-bis(oxyethyl)-3-aminopropyl decane, N-bis(oxyethyl)-3-aminopropyltriethoxystanol Diglycidyl ether, polyethylene glycol diglycidyl ether, propylene glycol glyceryl ether, tripropylene glycol diglycidyl ether, polypropylene glycol dihydrate, neopentyl glycol diglycidyl ether, 1,6-hexanediol diglycidyl oil Diglycidyl ether, 2,2-dibromoneopentyl glycol diglycidyl ether glycidyl-2,4-hexanediol, N,N,N',N'-tetraglycidyltoluenediamine, 1 , 3-bis(indole, fluorene-diglycidylaminomethyl)cycloindole ratio ^[',1^'-tetraglycidyl-4,4'-diaminodiphenylmethane or the like. These may be used alone or in combination of two or more. When the coupling agent is used, the content thereof is preferably 0.1 to 30 parts by mass, and more preferably 20 parts by mass, per 100 parts by mass of the substrate for image formation. Further, in the underlayer film composition for image formation of the present invention, the coating property of the composition and the film thickness of the film obtained from the composition are both surface smoothness, and may also contain a surfactant. The surfactant is not particularly limited, and examples thereof include a surfactant, a lanthanoid surfactant, a nonionic interfacially active oxonium group, Ν-benzyltriethoxy-3-amine-trimethoxy, The bis-glycidyl ether ether, the glycerol, the 6-tetra-m-dihexane, and the chemical layer film group are preferably 1 for the purpose of improving oneness or a fluorine-based agent. -28 - 201002762 As such a surfactant, for example, F TOP EF301, EF303, EF3 52 (manufactured by JEMUYU Co., Ltd.), MEGAFAX F 1 7 1 'F 1 7 3, R-3 0 (Daily Ink Chemistry) Industrial (share) system, FLORIDE FC430, FC43 1 (Sumitomo 3M (share) system), ASAHIGUAID AG7 1 0, SURFLON S-3 82, SC101, SC102, SC103, SC104, SC105, SC106 (Asahi Glass (share)), etc. . When the surfactant is used, the content thereof is preferably 0.01 to 2 parts by mass, more preferably 0.01 to 1 part by mass, per 100 parts by mass of the polymer component contained in the underlayer film composition for image formation. [Polymer Blend] The underlayer film composition for image formation of the present invention may be mixed with other polymers capable of forming a film (for example, high in addition to the polyimine precursor of the present invention and/or polyimine. Insulating polymer), the so-called polymer blend morphology. In the polymer blend, by adjusting the structure of the polymer (the polyimine precursor of the present invention, polyimine, and other polymers), the film can be formed in the film at the time of formation of the cured film. The concentration gradient of each polymer is generated in the thickness direction, so that it can be utilized as a useful means. For example, since the change in hydrophilicity is a problem only for the surface of the film, the fluoroalkyl group-containing polyimide precursor and/or polyimine of the present invention is present only in the upper layer of the cured film. The surface layer can be. Therefore, when the above-mentioned image forming underlayer film composition is used as a polymer blend form, 'as a polyimine precursor of the present invention or a polyimine bond -29-201002762, the ratio is relative to the blending polymerization. The total mass of the substance is from 1% by mass to 1% by mass. When it is 1% by mass or less, the polyimine precursor or the polyimine of the present invention having the outermost surface of the film formed is too small, and the image forming ability is deteriorated. The above-mentioned polymer-derived compound can be exemplified by the use of the underlayer film composition for image formation of the present invention in the use of a gate insulating film which is particularly required to have high insulating properties. When it is used for a gate insulating film, the coating liquid is required to have a firing temperature corresponding to 180 ° C or lower, a film formation by coating, and a solvent resistance to an organic semiconductor coating liquid (xylene, There are several characteristics such as a non-polar solvent such as trimethylbenzene and a low water absorption rate, but it is required to have the highest performance in terms of insulation. In order to achieve such high insulation properties, the composition of the underlayer film for image formation of the present invention has a ruthenium amination rate of at least 8 〇% or more, and depending on the case, it is required to be 90% or more. When the rate exceeds 90%, the solubility of the solvent is also lowered. In this case, the high insulating layer is located only in the lowermost layer of the insulating film, and the layer composed of the underlayer film composition for image formation of the present invention is located in the upper layer, thereby maintaining the high insulating property and solubility problem of the insulating film. Can also be dissolved. The above can be obtained by sequentially laminating the lower layer of the cured film as a high insulating layer and the upper layer as a hydrophilic-hydrophobic conversion layer, but the operation is cumbersome. At this time, the material of the high insulating layer is mixed with the material of the hydrophilic-hydrophobic conversion layer (that is, the polyimide precursor of the present invention and/or the polyimine), and at this time, if the polarity or molecular weight of the upper material is set If it is smaller than the lower layer, then -30-201002762, the mixture is coated on the substrate and dried, and during the evaporation of the solvent, the upper layer material shows the movement to the surface forming layer, so the above concentration gradient can be easily controlled (this The so-called layer separation). The material for forming the high insulating film which can form the lower layer described above is preferably a soluble polyimine. When a soluble polyimine is used as the underlayer material, the sulfonium imidization ratio of the polyimine in the solution is preferably at least 50% or more, preferably 80% or more, from the viewpoint of insulation. It is preferably 90% or more. As the other material which can be used as the underlayer material, a general organic polymer such as an epoxy resin, an acrylic resin, a polypropylene, a polyvinyl alcohol, a polyvinyl phenol, a polyisobutylene, a polymethyl methacrylate or the like can be exemplified. Further, the above polymer blend is used, for example, in the case of an organic crystal crystal having a film thickness of about 40 Onm, and the polyimine precursor and/or polyazide of the present invention which is provided in the upper layer (hydrophobic interaction layer) The content ratio of the amine to the polymer blend is theoretically about 1%, but if it is too small, the in-plane deviation of the surface property of the cured film becomes large, so the polyimine precursor and/or the poly The quinone imine preferably contains at least 5% or more. [Manufacturing Method of Coating Film and Cured Film] The underlayer film composition for image formation of the present invention can be subjected to a dipping method, a spin coating method, a transfer printing method, a roll coating method, an inkjet method, a spray method, or a brush. Coating, etc., coated on a general-purpose plastic substrate or glass substrate of polypropylene, polyethylene, polycarbonate, polyethylene terephthalate, polyether oxime, polyethylene naphthalate, polyimine, etc. On the other hand, subsequently, pre-drying is performed by a hot plate or an oven - 31 - 201002762, etc., thereby forming a coating film. Subsequently, it can be used as an underlayer film or a cured film for image formation by the heat treatment. The above heat treatment method is not particularly limited, but a method of performing a hot plate or an oven in an appropriate atmosphere, that is, air, nitrogen, or the like, or a vacuum may be exemplified. The firing temperature is determined by the thermal enthalpy sub-point of the polyimide precursor, preferably from 180 ° C to 250 ° C, and is preferably formed on a plastic substrate, preferably 1 80 °. Below C. The firing can also be carried out with a temperature change of two or more stages. The order can further improve the uniformity of the obtained film. Further, when the cured film is produced, since the underlayer film for image formation contains a polyimide precursor and/or a polyimide and the above solvent, it can be directly used for coating the substrate, but the flatness of the film is adjusted. The purpose of improving the wettability of the coating liquid on the substrate, adjusting the surface tension, the polarity, the boiling point, and the like may be carried out by adding a solvent other than the above solvent. Specific examples of such a solvent include, in addition to the second stage agent of the above second page, ethyl cellosolve, butyl cellosolve 'alcohol, butyl carbitol, ethyl carbitol acetate, Ethylene glycol and the like 2-propanol, 1-ethoxy-2.propanol, 1-butoxy-2-propanol-2-propanol, propylene glycol monoacetate, propylene glycol diacetate 1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-ethylenepropanediol, 2-(2-methoxypropoxy)propanol, 2-(2-ethoxyl) The coating film is subjected to an insulating film by using an inert gas aminating film. The segmental firing composition is in the form of 'or ensuring that the coating liquid can be further added to the dissolved ethyl card; 1 -Methoxy:, 1-phenoxy, propylene glycol-ester, dipropoxy) propyl-32-201002762 Alcohol and propylene glycol derivatives such as 2-(2-butoxypropoxy)propanol, methyl lactate A lactate derivative such as ethyl lactate, n-propyl lactate, n-butyl lactate or isoamyl lactate. These can be used alone or in combination. Moreover, from the viewpoint of improving the preservability of the composition for forming an underlayer film for image formation and the film thickness uniformity of the coating film, 20 to 80% by mass of the total amount of the solvent is preferably selected from N,N-dimethyl group. At least one solvent of decylamine, N,N-dimethylacetamide, N-methyl-2-la-squalanone, γ-butyrolactone, dimethyl argon. The concentration of the underlayer film composition for image formation is not particularly limited, but is preferably from 0.1 to 30% by mass, more preferably from 1 to 10% by mass of the solid content of the polyimide and the polyimide. 10% by mass. It can be arbitrarily set depending on the type of the coating device or the film thickness to be obtained. When the cured film of the present invention produced as described above is used as an underlayer film for image formation, if the film thickness is too small, the patterning property after ultraviolet irradiation is lowered, and if it is too thick, the surface uniformity is impaired. Therefore, as the film thickness thereof, it is preferably from 5 nm to 100 nm, more preferably from 10 nm to 300 nm, most preferably from 20 nm to 10 nm, and the cured film of the present invention can also function as an insulation when the insulating property is sufficiently high. Membrane function. At this time, the cured film is used as a gate insulating film which is disposed on the direct gate electrode in, for example, an organic FET device. In this case, the film thickness of the cured film is required to ensure insulation, and it is preferable to have a thickness thicker than that used when the underlayer film for image formation is used. The thickness thereof is preferably from 2 Å to 100 nm, more preferably from 50 nm to 800 nm, and most preferably from 10 Å to 500 nm to 33 to 201002762. [Use as an underlayer film for image formation: Method for producing an electrode for image formation The underlayer film for image formation of the present invention is irradiated with ultraviolet rays in a pattern shape, and then an image forming liquid described later is applied to produce an electrode for image formation. In the present invention, the method of irradiating ultraviolet rays in a pattern shape in the image forming underlayer film of the present invention is not particularly limited, and for example, a method of irradiating a mask with a pattern of an electrode pattern can be used, and a laser light pattern is used. The method of the electrode pattern and the like. The material and shape of the mask are not particularly limited as long as the region necessary for the electrode is ultraviolet-transmitting, and the region other than the ultraviolet-ray transparent property may be used. In this case, it is generally possible to use an ultraviolet ray having a wavelength in the range of 200 nm to 500 nm, and it is preferred to select an appropriate wavelength depending on the type of polyimine used to pass through a filter or the like. Specifically, wavelengths of 248 nm, 2 54 nm, 303 nm, 313 nm, 3 65 nm, and the like are exemplified. It is preferably 248 nm or 2 5 4 nm. The underlayer film for image formation of the present invention gradually rises in surface energy by irradiation of ultraviolet rays, and saturates with a sufficient amount of irradiation. This increase in surface energy causes a decrease in the contact angle of the image forming liquid, and as a result, the wettability of the image forming liquid in the ultraviolet ray irradiation portion is improved. Therefore, when the image forming liquid is applied onto the underlayer film for image formation of the present invention after ultraviolet irradiation, the image is formed along the pattern shape of the underlayer film for image formation by the surface energy difference. The forming liquid will self-organize to form a pattern, and an electrode of any pattern shape can be obtained. -34-201002762 For this reason, it is necessary to irradiate the amount of ultraviolet irradiation to the image forming underlayer film to sufficiently change the contact angle of the image forming liquid, but the energy efficiency and the time of the manufacturing process are shortened. It is preferably 40 J/cm 2 or less, more preferably 20 J/cm 2 or less, and most preferably i 〇 j / cm 2 or less. Further, the larger the contact angle difference between the ultraviolet ray irradiation portion of the underlayer film for image formation and the image forming liquid of the non-irradiation portion, the easier the patterning becomes, and the processing of the electrode of a complicated pattern or a fine pattern shape becomes may. When a solution having a low surface tension is used, the difference in contact angle between the exposed portion and the unexposed portion is 5. Preferably, the above is better than 1 〇 ° or more, and the optimum is more than 20 °. Therefore, it is only necessary to appropriately optimize the application method of the image forming liquid, the surface tension of the image forming liquid, the image refinement, and the film flatness. For the same reason, the contact angle of the image forming liquid is preferably 30 or more in the ultraviolet non-irradiated portion, and the ultraviolet irradiation portion is preferably 20 or less. The image forming liquid in the present invention is a coating liquid which can be used as a functional film after being applied onto a substrate and evaporating the solvent contained therein, for example, dissolved or uniformly dispersed in at least one solvent. Charge transporting substance. Here, the charge transport property means that it is synonymous with conductivity, and is any one of charge transportability, electron transport property, and charge transportability of electrons and electrons. The charge transporting material is not particularly limited as long as it has conductivity capable of transporting holes or electrons. Examples thereof include metal fine particles such as gold, silver, copper, and aluminum, or inorganic materials such as carbon black, fullerene, and carbon nanotubes, or polythiophene, polyaniline, polypyrrole, and poly. An organic π-conjugated polymer or the like of such derivatives. -35- 201002762 In addition, in order to improve the charge transport energy of the charge transporting material, halogen, Lewis acid, protic acid, and transition metal compounds may be further added to the image forming liquid (specific examples are Br2, I2, FeCl3, Charge accepting substances such as MoC16, BF4, AsF6, S04, HN〇4, H2S〇4, polystyrenesulfonic acid, etc., or alkali metal or alkylammonium ions (specific examples are Li, Na, K, C s A charge-donating substance such as tetraethylammonium or tetrabutylammonium or the like is used as a dopant. The solvent of the image forming liquid is not particularly limited as long as it can dissolve or uniformly disperse the above-mentioned charge transporting substance or dopant. The surface tension of the image forming liquid is preferably from 25 mN/m to 50 mN/m from the viewpoint of obtaining the electrode image (pattern) correctly. When the surface tension is excessively lower than the above range, the ultraviolet irradiation portion cannot exhibit a sufficiently large contact angle, and if the surface tension is excessively higher than the above range, the contact angle of the ultraviolet irradiation portion becomes high, and the irradiation amount of the ultraviolet ray is increased, which is not preferable. The solvent for the image forming liquid is not particularly limited, and various organic solvents such as alcohols, ketones, ethers, esters, aromatic hydrocarbons, and glycols can be used. Examples of the alcohols include methanol, isopropanol, n-butanol, isobutanol, second butanol, isoamyl alcohol, and octanol. Examples of the ketones include acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone diacetone alcohol, and the like. Examples of the ethers include ether, isopropyl ether, dioxane, methyl cellosolve, ethyl cellosolve, and butyl cellosolve. Examples of the vinegar include ethyl acetate, butyl acetate, isobutyl acetate, amyl acetate, cellosolve acetate, fatty acid methyl ester, and the like. Examples of the aromatic hydrocarbons include benzene, toluene, xylene, and trimethylbenzene. -36-201002762 Examples of the aliphatic hydrocarbons include n-hexane, isohexane, cyclohexane, mineral waste, n-pentane, and the like. Examples of the glycols include ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, and propylene glycol monomethyl ether. Further, from the viewpoint of excellent solubility of the organic charge transporting substance, N,N-dimethylformamide, n,N-dimethylacetamide, 2-pyridinone are also preferable. , N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N-methylcaprolactam, dimethyl hydrazine, four A polar solvent such as methyl urea, but these are preferably used in a range in which damage to the underlayer film for image formation of the present invention is small. Further, although a solvent having a particularly large surface tension such as water can be used, it is preferred to adjust the surface tension by adding a surfactant or the like. The concentration of the charge transporting substance in the image forming liquid is preferably from 0.01 to 30% by mass, more preferably from 0.1 to 10% by mass, most preferably from 1 to 5% by mass, based on the image forming liquid of the present invention. Specific examples include a conductive polymer solution such as Baytron (registered trademark) P (polyethylenedioxythiophene, manufactured by Bayer), DOTITE XA-9069 (manufactured by Fujikura Kasei Co., Ltd.), and W4A (manufactured by Sumitomo Electric Co., Ltd.). A silver fine particle dispersion liquid such as NPS-J (manufactured by HARIMA Chemical Co., Ltd.). The electrode of the present invention is produced by applying the image forming liquid onto the underlayer film for image formation of the present invention, forming an image, and evaporating the solvent. The solvent evaporation method is not particularly limited, but it can be evaporated by using a hot plate or an oven under an appropriate atmosphere, that is, an inert gas such as air or nitrogen, or a vacuum to obtain a uniform film formation surface. -37- 201002762 The solvent evaporation temperature is not particularly limited, but is preferably carried out at 40 to 250 °C. In order to maintain the shape of the underlayer film for image formation and to achieve uniformity after film formation, temperature changes of two or more stages may be employed. The electrode formed by the image forming liquid can be used not only as a wiring for connecting electronic devices but also as an electrode of an electric device such as an electric field effect transistor, a bipolar transistor, various diodes, various sensors, or the like. . The electronic device of the present invention may be an electrode made of an image forming liquid formed on the underlayer film for image formation of the present invention. Hereinafter, an example in which the underlayer film for image formation of the present invention is used for an organic FET device is shown, but the present invention is not limited thereto. First, a glass substrate having an I TO electrode is formed on one surface. Preferably, the substrate is washed with a liquid such as a lotion, alcohol or pure water in advance, and subjected to surface treatment such as ozone treatment or oxygen-plasma treatment just before use. On the substrate with the ITO electrode, a polyimine precursor having a structural unit represented by the above formula (1) and formula (la) is formed in the order of [the method for producing a coating film and a cured film] / or layer of polyimine. The film thickness of the layer is preferably from 100 nm to 100 nm in terms of both the driving voltage and the electrical insulating property. Subsequently, ultraviolet rays are irradiated in a pattern shape using a photomask or the like. Next, an image forming liquid using a low surface tension solvent such as PGME is applied onto the surface of the underlayer film for image formation. The applied image forming liquid is rapidly expanded in the hydrophobic portion (ultraviolet-irradiated portion) by the hydrophilic portion (ultraviolet-irradiated portion) to be stabilized, and dried to form a patterned source and gate electrode. The coating method of the image forming liquid is not particularly limited to the spin coating method or the casting method, but it is preferably an ink jet method or a spray coating method which is easy to control the amount of liquid -38-201002762 Finally, by pentazenes ( An organic semiconductor material such as Pentacene) or polythiophene is formed into a film to complete an active layer of an organic FET. The film forming method of the organic semiconductor material is not particularly limited, and examples thereof include, for example, a vacuum vapor deposition or a solution spin coating method, a casting method, an inkjet printing method, or a spray coating method. As described above, the organic FET produced can greatly reduce the number of fabrication steps, and further, since an organic FET having a shorter channel than the mask vapor deposition method can be fabricated, even when a low mobility organic semiconductor material is used as the active layer, Get a large current. Further, as the insulating film for the organic transistor, a film having a dielectric constant of 3.0 or more may be used. The underlayer film for image formation obtained by the method of the present invention has excellent electrical insulating properties and also has a dielectric constant as high as 3 _0, so that it can also be used as a gate insulating layer (insulating film), and the manufacturing steps can be simplified. Chemical. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an embodiment of the present invention, but the present invention is not limited to the above. [Measurement of 2P average molecular weight and weight average molecular weight of stomach] The number average molecular weight (hereinafter referred to as Μη) and the weight average molecular weight (hereinafter referred to as Mw) of the polyimide intermediate precursor obtained by the following synthesis method are by GPC (normal temperature) The gel permeation chromatography method was measured in the following apparatus and measurement conditions at -39-201002762, and was calculated as polyethylene glycol (or polyethylene oxide). GPC device: Shodex (registered trademark) (GPC-101) manufactured by Showa Denko Electric Co., Ltd. Pipe column: Shodex (registered trademark) manufactured by Showa Electric Co., Ltd. (KD803, K D 8 0 5 series)
管柱溫度:50°C 溶離液:Ν,Ν-二甲基甲醯胺 (作爲添加劑爲溴化鋰一水合物(LiBr. Η2〇)3〇毫莫耳 /升,磷酸·無水結晶(〇-磷酸)30毫莫耳/升,四氫呋喃 (THF)10毫升/升) 流速:1 .〇毫升/分鐘 校正線製作用標準樣品: 東曹(股)製TSK標準聚環氧乙烷(分子量:900,000、 150,000、 100,000、 30,000) POLYMER ROBOLABO公司製聚乙二醇(分子量:約 1 2,000 ' 4,000、1,000) [膜厚之測定] 聚醯亞胺之膜厚係以切割刀剝離膜之一部分,使用全 自動微細形狀測定機(ET4000A,小坂硏究所(股)製),將 測定力設爲1〇μΝ、掃描速度設爲0.05mm/秒而測定並藉此 求得。 [紫外線照射] 透過使作爲光源之高壓水銀燈之波長254nm附近之光 -40- 201002762 通過帶濾通器於聚醯亞胺薄膜上照射紫外線。 又’算出聚醯亞胺膜上之紫外線照度乘以曝光時間者 作爲聚醯亞胺膜上之曝光量(J/cm2)。 上述紫外線之照度爲於照度計(Ο AI公司製型號3 〇 6) 上安裝在波長253.7nm具有最尚感度之Deep UV用之探針 予以測定,所得之照度爲45〜50 mW/cm2。 [接觸角之測定] 接觸角之測定係於恆溫恆濕環境(2 5 °C ± 2 °C,5 0 % RII±5%)中’使用全自動接觸角計CA-W(協和界面科學(股 )製)加以測定。 又,丙二醇單甲醚(PGME)的接觸角係以液量3.〇〜3.5 微升於著液後靜止5秒加以測定,且純水之接觸角係液量 3微升於著液後靜止5秒加以測定。 <合成例1> 聚醯亞胺前驅物(PI-1)之聚合 於氮氣流中,於50毫升4頸燒瓶中,裝入1.8823克 (0.0094莫耳)之 4,4’-二胺基二苯基醚(後文稱 〇DA)及 0.3579克(0.0006莫耳)之3,5-二胺基苯甲酸η-(全氟正己 基)-正十一烷酯(後文稱八?(:11-6?),溶解於23.58克之心 甲基-2-吡咯啶酮(後文稱NMP)後,加入1.9219克(0.0098 莫耳)之1,2,3,4-環丁烷四羧酸二酐(後文稱080人),將其 在23 °C攪拌12小時進行聚合反應,進而以NMP稀釋,獲 -41 - 201002762 得聚醯亞胺前驅物(P I-1)之6質量%溶液。 所得聚醯亞胺前驅物(P 1-1)之數平均分子量(Μη)與重 量平均分子量(Mw)分別爲Mn = 35,200、Mw=83,60〇。 <合成例2> 聚醯亞胺(PI-2)之聚合 於氮氣流中,於1〇〇毫升4頸燒瓶中,裝入〇dA 3.3 5 0 1 克(0.0 1 67325 莫耳)、1.6164 克(0.004462 莫耳)之 2,2 -雙(3-胺基-4 -甲基苯基)六氟丙烷(後文稱 AMF)、 APC11-6F 0.6965 克(0.0011155 莫耳),溶解於 49.44 克 NMP後,加入 6.698 1克(0.022 3 1莫耳)之 3,4-二羧基-1,2,3,4-四氫-1-萘琥珀酸二酐(後文稱丁〇八),將其在50艺 攪拌24小時進行聚合反應,所得聚醯胺酸溶液以NMP稀 釋至8質量%。 於此溶液60克中添加22·1克乙酸酐、1〇.3克吡啶作 爲醯亞胺化觸媒’於5 0 °C反應3小時獲得聚醯亞胺溶液。 將此溶液投入大量甲醇中’過濾所得之白色沉澱’經乾燥 ,獲得白色聚醯亞胺粉末。此聚醯亞胺粉末藉由iH-NMR 確認爲90%以上之醯亞胺化。將此粉末4克溶解於3 0克 γ-丁內酯及6克二丙二醇單甲醚之混合溶劑中’獲得聚醯 亞胺(ΡI - 2)之1 〇質量%溶液。 所得聚醯亞胺(ΡΙ-2)之數平均分子量(Μη)與重量平均 分子量(Mw)分別爲 Mn=13,900、Mw = 28,400。 -42- 201002762 <合成例3> 聚醯亞胺(PI-3)之聚合 於氮氣流中,於50毫升4頸燒瓶中’裝入2.7769克 (0.0095莫耳)之1,3 -雙(4 -胺基苯氧基)苯(後文稱DA-4P)、 APC11-6F 0.3122 克(0.0005 莫耳),溶解於 21.96 克 NMP 後,加入2_402克(0.0099莫耳)之雙環[3.3.0] -辛烷_ 2,4,6,8-四羧基二酐(後文稱8〇〇八),將其在40°(:攪拌24 小時進行聚合反應,所得聚醯胺酸溶液以NMP稀釋至8 質量%。 於此溶液23克中添加8.5克乙酸酐、3_9克吡啶作爲 醯亞胺化觸媒,於1 〇〇°C反應3小時獲得聚醯亞胺溶液。 將此溶液投入大量甲醇中,過濾所得之白色沉殺,經乾燥 ,獲得白色聚醯亞胺粉末。此聚醯亞胺粉末藉由1 H-NMR 確認爲90%以上之醯亞胺化。將此粉末3克溶解於22.5 克γ-丁內酯及4.5克二丙二醇單甲醚之混合溶劑中,獲得 聚醯亞胺(ΡΙ-3)之10質量%溶液。 所得聚醯亞胺(ΡΙ-3)之數平均分子量(Μη)與重量平均 分子量(Mw)分別爲 Mn=19,300、Mw = 50,300。 <合成例4> 聚醯亞胺前驅物(PI-4)之聚合 於氮氣流中,於100毫升4頸燒瓶中,裝入〇d A 2.8234 克(0.0141 莫耳)及 APC11-6F 0.5620 克(0.0009 莫耳 ),溶解於36_97克NMP後,加入3.1084克(〇.01425莫耳 -43- 201002762 )均苯四甲酸二酐(後文稱PMDA),將其在23°C攪拌5小時 進行聚合反應,進而以NMP稀釋,獲得聚醯亞胺前驅物 (PI-4)之8質量%溶液。 所得聚醯亞胺前驅物(P 1-4)之數平均分子量(Mn)與重 量平均分子量(Mw)分別爲Mn=15,500、Mw = 35,〇〇〇。 <比較合成例1 > 聚醯亞胺前驅物(PI-5)之聚合 於氮氣流中,於200毫升4頸燒瓶中,裝入1 5.065(0.040 莫耳)之1-十八烷氧基-2,4-二胺基苯(後文稱APC18),溶 解於1 27.6克NMP後,加入7.45克(0.03 8莫耳)CBDA, 將其在23 °C攪拌12時進行聚合反應,進而以NMP稀釋, 獲得聚醯胺酸(PI-5)之2質量%溶液。 所得聚醯胺酸(PI-5)之數平均分子量(Μη)與重量平均 分子量(Mw)分別爲 Mn= 1 6,000、Mw = 48,000。 <比較合成例2 > 聚醯亞胺前驅物(ΡΙ·6)之聚合 於氮氣流中,於50毫升4頸燒瓶中,裝入ODA 2.9856克 (0.01491 莫耳)及 APC11-6F 0.0562 克(0.00009 莫耳),溶 解於24.93克ΝΜΡ後,加入2.7946克(0.01425莫耳) CBDA,將其在23 °C攪拌12時進行聚合反應,進而以 NMP稀釋,獲得聚醯亞胺前驅物(PI-6)之6質量%溶液。 所得聚醯亞胺前驅物(p 1-6)之數平均分子量(Μη)與重 -44- 201002762 量平均分子量(Mw)分別爲Mn=14,2〇〇、Mw = 28,500。 以下顯示於合成例及比較合成例中使用之四羧酸二酐 及二胺之一覽表。 [表1] (表1)合成例及比較合成例中使用之四羧酸二肝與二胺 四羧1 俊二酐 ----—-二 /、——"二----- 二胺 -一 CBDA TDA BODA PMDA ODA DA-4P AMF APC11-6F _APC18_ PI-1 100 94 6 PI-2 100 75 20 5 PI-3 100 95 5 PI-4 100 94 6 PI-5 100 100 PI-6 100 99.4 0.6 ※1 :表內 數字表示所7 曾四羧 酸二 酐中名 r四羧 酸二酐之莫 耳分率,或所有二胺中各二胺之莫耳分率。 <實施例1 :由PI-1所形成之聚醯亞胺膜之紫外線感度特 性(PGME之接觸角)> 於附有ITO之玻璃基板(2.5cm見方,厚度〇.7mm)上 ’以附有0.2微米孔過濾器之針筒滴加合成例1所調製之 PI-1之溶液,藉由旋轉塗佈法加以塗佈。隨後在大氣中, 以8 0 °c加熱板加熱處理5分鐘,使有機溶劑揮發,接著以 were加熱板燒成30分鐘,獲得膜厚約4 0 Onm之聚醯亞胺 膜。測定此聚醯亞胺膜之PGME接觸角。 對以同樣順序獲得之聚醯亞胺膜照射6J/cm2照射量之 -45- 201002762 紫外線,測定PGME之接觸角。 <貫施例2至實施例4、比較例1及比較例2 :由p丨_ 2至 PI_6形成之聚醯亞胺膜之紫外線感度特性(Pgme之接觸角)> 使用合成例2至合成例4、比較合成例1及比較合成 例2所調製之p I - 2至PI - 6溶液,使用與實施例1同樣順 序製作聚醯亞胺膜’分別測定未照射紫外線、照射6 j / c m 2 紫外線後之PGME接觸角。 PGME接觸角之測定結果示於表2。 [表2] (表2)紫外線照射前後之PGME接觸角 編號 使用 PI組成 未照 6J/cm2 接觸角差 PI 酸 二胺※1 射 照射後 實施例1 PI-1 CBDA ODA(94),APCll-6F ⑹ 38.0 17.2 20.8 實施例2 PI-2 TDA ODA(75),AMF(20),APC11-6F(5) 33.0 12.0 21.0 實施例3 PI-3 BODA DA-4P(95),APC11-6F ⑸ 34.4 19.7 14.7 實施例4 PI-4 PMDA ODA(94),APC18-6F ⑹ 37.9 29.7 8.2 比較例1 PI-5 CBDA APC18(100) 17.7 19.5 -1.8 比較例2 PI-6 CBDA 0DA(99.4),APC11-6F(0.6) 25.0 21.3 3.7 ※丨:括弧內數字表示所有二胺中各胺之莫耳分率。 如表2所示’相當於本發明之圖像形成用底層膜組成 物中之由聚醯亞胺前驅物或聚醯亞胺所得之硬化膜之實施 例1至實施例4顯示撥液性,藉由紫外線照射引起之親疏 水性變化量爲8〜21°,可獲得可形成圖像之接觸角差(5°以 上)0 -46- 201002762 另—方面’由PI - 5所得之聚醯亞胺膜(比較例1)未顯 示撥液性’再者,藉由紫外線照射其親水性亦無變化。反 而是紫外線照射後之接觸角僅少許增加,因此將無法形成 圖像。 又由PI-6所得之聚醯亞胺膜(比較例2)雖顯示撥液性 ’但紫外線照射引起之親疏水性變化量小如3.7。,而無法 ®得可形成圖像之接觸角差。 <實施例5至8:由PI-1至PI-4所形成之聚醯亞胺膜之紫 夕t線感度特性(水接觸角)> 使用合成例1至合成例4所調製之PI-1至PI-4溶液 ’使用與實施例1同樣順序製作聚醯亞胺膜,分別測定未 照射紫外線 '照射40J/cm2紫外線後之與水之接觸角。 水接觸角之測定結果示於表3。 [表3] r-IA 3)紫外線照射前後之水接觸角 編號 ----— 使用 PI組成 未照 40J/cm2 接觸 PI 酸 二胺※1 射 照射後 角差 PI-1 CBDA 0DA(94),APC11-6F ⑹ 96.7 23.3 73.4 PI-2 TDA ODA(75),AMF(20),APC11-6F(5) 96.4 <5.0 >91.4 PI-3 BODA DA-4P(95),APC11-6F(5) 98.5 6.8 91.7 8 PI-4 PMDA ODA(94),APC18-6F(6) 98.7 22.4 76.3 :括弧內數字表示所有二胺中各胺之莫耳分率。 如表3所示,相當於本發明之圖像形成用底層膜組成 -47- 201002762 物中之由聚醯亞胺前驅物或聚醯亞胺所得之硬化膜之實施 例5至實施例8藉由紫外線照射可獲得大的接觸角差。 亦即,本發明之圖像形成用底層膜顯示可使各種表面 張力之圖像形成液繪圖。 <實施例9 :由PI-2成膜之聚醯亞胺之比介電率> 於附有ITO之玻璃基板(2.5cm見方’厚度〇.7mm)上 ,以附有0 · 2微米孔過濾器之針筒滴加合成例2所調製之 P I - 2之溶液,藉由旋轉塗佈法加以塗佈。隨後在大氣中, 以8 0 °C加熱板加熱處理5分鐘,使有機溶劑揮發,接著以 1 80 °C加熱板燒成60分鐘,獲得約膜厚約40 Onm之聚醯亞 胺膜。 接著爲了獲得ITO電極與測定裝置之探針之良好接觸 ,將聚醯亞胺膜之一部分削除露出ITO厚,使用真空蒸鍍 裝置,於聚醯亞胺膜上及ITO上層合直徑1.0mm、膜厚 lOOnm之鋁電極。此時的真空蒸鍍條件爲室溫、真空度3x l(T3Pa以下、鋁蒸鍍速度〇.3nm/秒以下。如此於聚醯亞胺 膜上下形成電極,製作聚醯亞胺膜之比介電率評價用樣品 〇 此聚醯亞胺膜之比介電率評價用樣品之比介電率爲 3 _0,雖然撥水性高,但確保可用於有機電晶體中作爲閘 極絕緣膜之3 · 0以上之比介電率,判定顯示優異特性。 又,施加電場〗MV/Cm時之滲漏電流密度爲2x10 — 1()A/Cm2,確認β卩使是作爲有機電晶體之閘極絕緣膜之絕 -48- 201002762 緣性於實用上亦無問題。 又,於本實施例中’聚醯亞胺膜之比介電率係使用安 藤電氣(股)製之AG-4311B’測定靜電電容而求得。靜電 電容量係於氮氣氛圍中,於頻率1 KHz測定。又’聚醯亞 胺膜之滲漏電流密度之測定係使用 AGILENT TECHNOLOGY 公司製之 HP4156C。 <比較例3 :由PI-5成膜之聚醯亞胺膜之比介電率> 除使用比較合成例1調製之PI-5溶液,膜的燒成溫 度設爲在真空中250°C、60分鐘,膜厚設爲270nm以外, 其餘與實施例9同樣的方法評價由PI-5成膜之聚醯亞胺 膜之比介電率。 由PI-5成膜之聚醯亞胺膜之滲漏電流密度爲lxl(T1G A/crn2以下,但比介電率爲2.7。欲作爲閘極絕緣膜使用 之比介電率低,縱然可獲得作爲圖像形成底層膜之性能, 但仍無法作爲閘極絕緣膜。 <合成例5> 聚醯亞胺前驅物(PI-7)之聚合 於氮氣流中,於100毫升4頸燒瓶中,裝入OD A 1.7621 克(0.008 8 莫耳)及 APC11-6F 0.7158 克(0.0012 莫耳),溶 解於24.93克NMP後,加入CBDA 1.9219克(0.0098莫耳 )’將其在23°C攪拌12小時進行聚合反應,進而以NMP 稀釋’獲得聚醯亞胺前驅物(P〗_ 7)之6質量。/〇溶液。 -49- 201002762 所得聚醯亞胺前驅物(PI-7)之數平均分子量(Μη)與重 量平均分子量(Mw)分別爲Mn = 29,63 0、Mw = 67,400。 <合成例6> 聚醯亞胺(PI-8)之聚合 於氮氣流中,於100毫升4頸燒瓶中,裝入ODA 3.4366 克(0.01716 莫耳)、AMF 1.6151 克(0.004458 莫耳)、 APC11.6F 0.4176 克(0.000669 莫耳),溶解於 48.65 克 NMP後,加入TDA 6.6927克(0.02229莫耳),將其在50°C 攪拌24小時進行聚合反應,所得聚醯胺酸溶液以NMP稀 釋至8質量%。 於此溶液148克中添加22.2克乙酸酐、10.3克吡啶 作爲醯亞胺化觸媒,於5 0 °C反應3小時獲得聚醯亞胺溶液 。將此溶液投入大量甲醇中,過濾所得之白色沉澱,經乾 燥,獲得白色聚醯亞胺粉末。此聚醯亞胺粉末藉由1H-NMR確認爲90%以上之醯亞胺化。將此粉末4克溶解於 3〇克γ-丁內酯及6克二丙二醇單甲醚之混合溶劑中,獲 得聚醯亞胺(ΡΙ-8)之10質量%溶液。 所得聚醯亞胺(ΡΙ-8)之數平均分子量(Μη)與重量平均 分子量(Mw)分別爲 Mn=15,300、Mw = 31,500。 <合成例7 > 聚醯亞胺前驅物(PI-9)之聚合 於氮氣流中,於100晕:升4頸燒瓶中,裝入ODA 3.5683 -50- 201002762 克(0.01782莫耳)、〇_ill3克(0.00018莫耳)之ι_(4_全氣辛 基)苯氧基-2,4-二胺基苯(後文稱DA-1),溶解於27·99克 ΝΜΡ後’加入CBDA 3.3182克(0.01692莫耳),將其在 23°C攪拌12小時進行聚合反應,進而以ΝΜΡ稀釋,獲得 聚醯亞胺前驅物(PI-9)之8質量%溶液。 所得聚醯亞胺前驅物(PI-9)之數平均分子量(Mn)與重 量平均分子量(Mw)分別爲Mn = 31,500、Mw = 67,200。 [化 15] <合成例8 > 聚醯亞胺前驅物(PI-10)之聚合 於氮氣流中,於100毫升4頸燒瓶中,裝入ODA 1.9624 克(0.0098 莫耳)、DA-1 0.1237 克(0·0002 莫耳),溶解於 15.72 克 ΝΜΡ 後,加入 CBDA 1.8434 克(0.0094 莫耳),將 其在2 3 °C攪拌1 2小時進行聚合反應,進而以ΝΜΡ稀釋, 獲得聚醯亞胺前驅物(PI-10)之8質量%溶液。 所得聚醯亞胺前驅物(PI-10)之數平均分子量(Μη)與重 量平均分子量(Mw)分別爲Mn=3 1,200、Mw = 68,100。 <合成例9 > 聚醯亞胺(PI-1 1)之聚合 於氮氣流中,於100毫升4頸燒瓶中,裝入ODA 5.887 -51 - 201002762 克(0.0294 莫耳)、DA -丨 0.371 克(0.0006 莫耳),溶 60.88 克 NMP 後,加入 TDA 8.9631 克(0.03 莫耳)’ 在5 0°C攪拌24小時進行聚合反應,所得聚醯胺酸溶 NMP稀釋至8質量%。 於此溶液170克中添加27.8克乙酸酐、12.9克 作爲醯亞胺化觸媒,於5 0 °C反應3小時獲得聚醯亞胺 。將此溶液投入大量甲醇中,過濾所得之白色沉澱, 燥,獲得白色聚醯亞胺粉末。此聚醯亞胺粉末藉由 NMR確認爲90%以上之醯亞胺化。將此粉末4克溶 30克γ-丁內酯及6克二丙二醇單甲醚之混合溶劑中 得聚醯亞胺(PI-U)之10質量%溶液。 所得聚醯亞胺(ΡΙ-11)之數平均分子量(Μη)與重量 分子量(Mw)分別爲 Mn = 30,470、Mw = 66,900。 <合成例1 0 > 聚醯亞胺(pi-12)之聚合 於氮氣流中,於1〇〇毫升4頸燒瓶中,裝入DA-3 8 克(0.0196 莫耳)、DA- 1 0.2473 克(0.0004 莫耳),溶 5 6.7 克 NMP 後,加入 TDA 5.8 8 5 3 克(〇.0196 莫耳), 在5 0 C擾泮2 4小時進fj聚合反應’所得聚酿胺酸溶 NMP稀釋至8質量%。 於此溶液I77克中添加1 9.3克乙酸酐、8.9克眼: 爲酿亞胺化觸媒,於5 0 °C反應3小時獲得聚酿亞肖安胃 將此溶液投入大量甲醇中,過濾所得之白色沉胃 解於 將其 液以 吡啶 溶液 經乾 Ή- 解於 ,獲 平均 0458 解於 將其 液以 啶作 液。 經乾燥 -52- 201002762 ,獲得白色聚醯亞胺粉末。此聚醯亞胺粉末藉由1 h-nmr 確認爲90%以上之醯亞胺化。將此粉末4克溶解於52.67 克γ-丁內酯及1〇克二丙二醇單甲醚之混合溶劑中,獲得 聚醯亞胺(Ρ I -1 2)之6質量%溶液。 所得聚醯亞胺(Ρ 1-12)之數平均分子量(Μη)與重量平均 分子量(Mw)分別爲 Mn=19,700 ' Mw = 47,960。 <合成例1 1 > 聚醯亞胺(PI-13)之聚合 於氮氣流中,於100毫升4頸燒瓶中,裝入DA-3 5.1764 克(0.01261 莫耳)、DA-1 0.2411 克(0.00039 莫耳),溶解 於 3 6.77 克 NMP 後,加入 TDA 5.1 764 克(0.0 1 25 7 1 莫耳) ,將其在50°C攪拌24小時進行聚合反應,所得聚醯胺酸 溶液以NMP稀釋至8質量%。 於此溶液130克中添加1 1.6克乙酸酐、5.4克吡啶作 爲醯亞胺化觸媒,於5 0°C反應3小時獲得聚醯亞胺溶液。 將此溶液投入大量甲醇中,過濾所得之白色沉澱,經乾燥 ,獲得白色聚醯亞胺粉末。此聚醯亞胺粉末藉由1 H-NMR 確認爲90%以上之醯亞胺化。將此粉末4克溶解於52.67 克γ-丁內酯及1〇克二丙二醇單甲醚之混合溶劑中’獲得 聚醯亞胺(Ρ 1-1 3)之6質量%溶液。 所得聚醯亞胺(Ρ1-13)之數平均分子量(Μη)與重量平均 分子量(Mw)分別爲 Mn = 20,970、Mw=51,220。 -53- 201002762 <比較合成例3 > 聚酿亞胺前驅物(PI-14)之聚合 於氮氣流中,於50毫升4頸燒瓶中,裝入DA-3 1.〇673 克(0.0026莫耳)及da- 1 0.8656克(0.0014莫耳),溶解於 15.31 克 NMP 後,加入 CBDA 0.7688 克(0.00392 莫耳), 將其在23 °C攪拌12小時進行聚合反應,進而以NMP稀釋 ’獲得聚醯亞胺前驅物(P1-1 4)之6質量%溶液。 所得聚醯亞胺前驅物(PI-14)之數平均分子量(Μη)與重 量平均分子量(Mw)分別爲Mn = 20,1 3 0、Mw = 4 8,28 0。 以下顯不於合成例5至合成例11及比較合成例3中 使用之四羧酸二酐及二胺之一覽表。表內數字表示四羧酸 二酐與二胺之添加量各設爲1〇〇時之莫耳分率。 [表4] (表4 ),成例及比較合成例中使用之四羧酸二肝與二胺 四羧酸- 二酐 二胺 CBDA TDA ODA AMF APC11-6F DA-3 DA-1 PI-7 100 88 12 PI-8 100 77 20 3 PI-9 100 99 1 PI-10 100 98 2 PI-11 100 98 2 PI-12 100 98 2 PI-13 100 97 3 PI-14 100 65 35 ※丨:表內數字表示所有四羧酸二酐中各四羧酸二酐之莫 耳分率,或所有二胺中各二胺之莫耳分率。 -54- 201002762 <合成例12> 聚醯亞胺(PI-15)之聚合 於氮氣流中,於200毫升4頸燒瓶中,裝入對-苯二 胺4.86克(0.045莫耳)、1_74克(0.005莫耳)之4-十六烷氧 基-1、3-二胺基苯,溶解於122.5克NMP後,加入TDA 1 5.0 1克(0.0 5莫耳),將其在室溫攪拌1 0小時進行聚合反 應,所得聚醯胺酸溶液以NMP稀釋至8質量%。 於此溶液5 0克中添加1 0 · 8克乙酸酐、5.0克吡啶作 爲醯亞胺化觸媒,於5 0°C反應3小時獲得聚醯亞胺溶液。 將此溶液投入大量甲醇中,過濾所得之白色沉澱,經乾燥 ,獲得白色聚醯亞胺粉末。此聚醯亞胺粉末藉由1 H-NMR 確認爲90 %以上之醯亞胺化。將此粉末4克溶解於52.67 克γ-丁內酯及10克二丙二醇單甲醚之混合溶劑中,獲得 聚醯亞胺(ΡΙ-15)之6質量%溶液。 所得聚醯亞胺(ΡΙ-15)之數平均分子量(Μη)與重量平均 分子量(Mw)分別爲 Mn=1 8,000、Mw = 54,000。 <實施例1 〇 :由PI-1形成之聚醯亞胺膜之銀微粒子分散液 (W4A)之塗佈性變化觀察> 於附有ITO之玻璃基板(2.5cm見方,厚度0.7mm)上 ’以附有0.2微米孔過濾器之針筒滴加合成例1所調製之 PI-1之溶液,藉由旋轉塗佈法加以塗佈。隨後在大氣中, 以8 0 °C加熱板加熱處理5分鐘,使有機溶劑揮發,接著以 -55- 201002762 180°C加熱板燒成30分鐘,獲得約膜厚約4〇〇11111之聚醯亞 胺膜。於此聚醯亞胺膜上,滴下3微米銀微粒子分散液( 製品名W4A ’住友電工製)’顯示聚醯亞胺膜對銀微粒子 分散液具有撥液性。 以同樣順序所得聚醯亞胺膜,照射6J/cm2照射量之紫 外線後,於此聚醯亞胺膜上,滴下3微米銀微粒子分散液 ’顯示聚醯亞胺膜對銀微粒子分散液具有親液性。 由Pi-1所得之聚醯亞胺膜藉由照射紫外線可控制銀 微粒子分散液之撥液性-親液性。 <實施例1 1至實施例1 9、比較例4至比較例6 :由PI-1至 PI-3、PI-5至PI-13形成之聚醯亞胺膜之塗佈性變化觀察> 使用PI-2、pi-3、PI-5至PI-14之溶液,使用與實施 例1同樣順序製作聚醯亞胺膜,觀察未照射紫外線、照射 紫外線6J/cm2後聚醯亞胺膜對銀微粒子分散液之撥液性_ 親液性。結果示於表5。 -56 - 201002762 [表5] (表5)對於銀微粒子分散液(W4A)之濡濕性變化 編號 使用PI 酸 二胺 濡濕性變化 實施例10 PI-1 CBDA ODA(94)、APC11-6F(6) 有 實施例11 PI-2 TDA ODA(75)、AMF(20)、APC11-6F(5) 有 實施例12 PI-3 BODA DA-4P(95)、APC11-6F(5) 有 比較例4 PI-5 CBDA APC18(100) Μ y ν 比較例5 PI-6 CBDA ODA(99.4) > APC11-6F(0.6) te j \ w 實施例13 PI-7 CBDA ODA(88)、APC11-6F(12) 有 實施例14 PI-8 TDA ODA(77)、AMF(20)、APC11-6F(3) 有 實施例15 PI-9 CBDA ODA(99) ' DA-1(1) 有 實施例16 PI-10 CBDA ODA(98) ' DA-1(2) 有 實施例17 PI-11 TDA ODA(98) ' DA-1(2) 有 實施例18 PI-12 TDA DA-3(98)、DA-1(2) 有 實施例19 PI-13 TDA DA-3(97)、DA-1(3) 有 ※丨:括弧內數字表示所有二胺中各胺之莫耳分率 ※2 :聚醯亞胺膜以紫外線照射6J/cm2時,聚醯亞胺膜由 撥液性變化成親液性者作爲濡濕性有變化,其以外 者爲濡濕性無變化者。 如上述表5所示,由相當於本發明之圖像形成用底層 膜組成物之聚醯亞胺前驅物或聚醯亞胺所得之硬化膜之實 施例1 〇至實施例1 9藉由照射紫外線對於銀微粒子分散液 之濡濕性有變化。利用濡濕性之變化可形成圖像。 另一方面由PI-5、PI-6所得之聚醯亞胺膜(比較例4、 比較例5 )即使照射紫外線,濡濕性亦無變化。 -57- 201002762 [聚合物摻合] <組合物之調製例1 :圖像形成用底層膜組成物之調製> 使以合成例12調製之聚醯亞胺(PI-15)之6wt%溶液 8.5克與合成例10調製之聚醯亞胺(PI-12)之6wt%溶液1.5 克混合,於室溫攪拌6小時,獲得組成物A。 <組合物之調製例2 ··圖像形成用底層膜組成物之調製> 使以合成例12調製之聚醯亞胺(PI-15)之6wt%溶液9 克與合成例1 1調製之聚醯亞胺(PI·13)之6wt%溶液1克混 合,於室溫攪拌6小時,獲得組成物B。 <組合物之調製例3 :圖像形成用底層膜組成物之調製> 使以合成例12調製之聚醯亞胺(PI-15)之6 wt%溶液 8.5克與合成例11調製之聚醯亞胺(?1-13)之6\^%溶液15 克混合,於室溫攪拌6小時’獲得組成物C。 <組合物之調製例4 :圖像形成用底層膜組成物之調製> 使以合成例1 2調製之聚醯亞胺(PI -1 5 )之6 w t %溶液8 克與合成例1 1調製之聚醯亞胺(PI-1 3)之6wt%溶液2克混 合,於室溫攪拌6小時’獲得組成物D。 义組合物之調製例5 :圖像形成用底層膜組成物之調製> 使以合成例1 2調製之聚醯亞胺(P 1 -1 5 )之6 wt%溶液 7 · 5克與合成例1 1調製之聚醯亞胺(PI -1 3 )之6 wt %溶液2 · 5 -58- 201002762 克混合,於室溫攪拌6小時,獲得組成物E。 <組合物之調製例6 :圖像形成用底層膜組成物之調製> 使以合成例12調製之聚醯亞胺(PI-15)之6wt%溶液7 克與合成例1 1調製之聚醯亞胺(PI-13)之6wt%溶液3克混 合,於室溫攪拌6小時,獲得組成物F。 <組合物之調製例7 :圖像形成用底層膜組成物之調製> 使以合成例12調製之聚醯亞胺(PI-15)之6wt%溶液9 克與比較合成例3調製之聚醯亞胺(PI-14)之6wt%溶液1 克混合,於室溫攪拌6小時,獲得組成物G。 <實施例20 :電極之圖型化性> 於附有ΙΤ.0之玻璃基板(2.5cm見方,厚度0.7mm)上 ’以附有0.2微米孔過濾器之針筒滴加組成物之調製例1 所調製之組成物A,藉由旋轉塗佈法加以塗佈。隨後在大 氣中,以8 0 °C加熱板加熱處理5分鐘,使有機溶劑揮發, 接著以180°C加熱板燒成30分鐘,獲得約膜厚約450nm 之聚醯亞胺膜。透過光罩對該聚醯亞胺膜圖型狀地照射紫 外線6J/cm2。接著,對紫外線照射部滴加極微量之銀微粒 子分散液後’顯示對聚醯亞胺膜之紫外線照射部之親液性 。隨後,於180 °C加熱板燒成60分鐘,形成膜厚50nm之 銀電極。 此銀電極之顯微鏡照片示於圖2。 -59- 201002762 <實施例2 1至實施例2 7 :電極之圖型化性> 除使用組成物B至組成物F及PI -1 2至PI -1 3之溶液 以外,以與實施例2 0相同順序使聚醯亞胺成膜,使用銀 微粒子分散液形成銀電極。所有聚醯亞胺膜均可形成電極 間隔1 〇微米之銀電極。 <比較例7 > 除使用組成物G之溶液以外,以與實施例2 〇相同順 序使聚醯亞胺成膜,使用銀微粒子分散液嘗試形成銀電極 。由組成物G之溶液所得之聚醯亞胺膜於紫外線照射部顯 示撥水性,無法形成目的之銀電極(圖3)。 <比較例8至比較例9 > 除使用PI-5至PI-6溶液以外,以與實施例2〇相同順 序使聚醯亞胺成膜,使用銀微粒子分散液嘗試形成銀電極 。由PI - 5至PI - 6之溶液所得之聚醯亞胺膜無論有無照射 紫外線均形成電極,無法形成目的之銀電極。 -60- 201002762 [表6] 表6本發明之聚醯亞胺膜之銀微粒子分散液之圖型化性 摻合比(質量%) 電極圖型 實施例20 組成物A PI-15/PI-12(15) 可形成 實施例21 組成物B PI-15/PI-13(10) 可形成 實施例22 組成物C PI-15/PI-13(15) 可形成 實施例23 組成物D PI-15/PI-13(20) 可形成 實施例24 組成物E PI-15/PI-13(25) 可形成 實施例25 組成物F PI-15/PI-13(30) 可形成 實施例26 PI-12 PI-12( 100) 可形成 實施例27 PI-13 PI-13(100) 可形成 比較例7 組成物G PI-15/PI-14( 10) 不能形成 比較例8 PI-5 PI-5(100) 不能形成 比較例9 PI-6 PI-6(100) 不能形成 <實施例2 8 :比電阻之比介電率之測定> 於附有ITO之玻璃基板(2_5cm見方,厚度0.7mm)上 ,以附有0.2微米孔過濾器之針筒滴加組成液調製例1所 調製之組成物A,藉由旋轉塗佈法加以塗佈。隨後在大氣 中,以80°C加熱板加熱處理5分鐘,使有機溶劑揮發,接 著以180°C加熱板燒成30分鐘,獲得約膜厚約45 0nm之 聚醯亞胺膜。 接著使用真空蒸鍍裝置,於上述聚醯亞胺膜上層合直 徑1.0mm至2.0mm、膜厚100nm之銘電極,製作於聚醯 亞胺膜上下設置電極之聚醯亞胺膜之絕緣性評價用樣品。 又此時的真空蒸鍍條件爲室溫、真空度3x1 (T3Pa以下、鋁 蒸鍍速度0.5 nm/秒以下。 -61 - 201002762 使用該樣品,於室溫、溼度45%±5%之大氣氛圍中測 定電流-電壓特性。於鋁電極側自正電壓爲0V至80V爲止 每 2V步進設 3秒之保持時間邊施加電壓,自電場 1 MV/cm時之電流値求得比電阻。比電組與比介電率之測 定結果示於表7。 <實施例29至實施例35> 除使用組成物B至組成物F及PI-12至PI-13之溶液 以外,使用實施例2 8同樣順序使聚醯亞胺成膜,測定比 電阻及比介電率。結果示於表7。 [表7] 表7本發明 之聚醯亞胺膜之比電阻及比介電率 摻合比(質量%) 比電阻(Ω cm) 比介電率 實施例28 組成物A PI-15/PI-12(15) >1015 3.2 實施例29 組成物B PI-15/PI-13(10) >1015 3.2 實施例30 組成物C PI-15/PI-13(15) >1015 3.2 實施例31 組成物D PI-15/PI-13(20) >1015 3.2 實施例32 組成物E PI-15/PI-13(25) >1015 3.1 實施例33 組成物F PI-15/PI-13(30) >1015 3.1 實施例34 PI-12 PI-12( 100) >1015 3 實施例35 PI-13 PI-13(100) >1015 3 <實施例3 6 :有機電晶體之製作> 於實施例20所得之銀電極上,調整將聚(3-己基噻吩-2,5-二基)(由MERCK獲得,後文簡稱爲P3HT)以2質量% -62- 201002762 之濃度溶解於二甲苯之P 3 HT之塗佈溶液,使用旋轉塗佈 法在前述聚醯亞胺膜上,在氧濃度〇.5ppm以下之氮氣氛 圍下塗佈該塗佈溶液。 隨後,爲使溶劑完全揮發,於真空狀態下於1 〇 〇 r加 熱處理60分鐘’形成半導體層,完成有機薄膜電晶體。 上述所得之有機薄膜電晶體之電氣特性藉由測定對於 閘極電壓之汲極電流變化加以評價。 詳言之’將源極-汲極電壓(VD)設爲-40V,閘極電壓 (VG)自+30V至- 30V,每2V步進變化,至電流十分安定爲 止保持1秒電壓後之値作爲汲極電流之測定値並加以記錄 。又測定係使用半導體參數分析儀HP4156C(AGILENT TECHNOLOGY(股)製)進行。 閘極電壓施加至負値時,見到汲極電流大幅增加,確 認P3HT可作爲p型半導體而發揮作用(圖4)。 接著,測定閘極電壓(VG)自+20V至-30V爲止,以 10V步進變化時之源極電流與源極電壓之關係’確認有機 電晶體正常地作用(圖5)。 一般’於飽和狀態汲極電流Id可以下述式表示。亦 即有機半導體之移動度V可由以汲極電流1D之絕對値之 平方根作爲縱軸,以閘極電壓V G作爲橫軸加以作圖時之 斜率求得。Column temperature: 50 ° C Dissolution: hydrazine, hydrazine-dimethylformamide (as an additive for lithium bromide monohydrate (LiBr. Η2〇) 3 〇 millimoles / liter, phosphoric acid · anhydrous crystals (〇-phosphoric acid 30 mmol/L, tetrahydrofuran (THF) 10 ml/L) Flow rate: 1. 〇ml/min calibration line for standard preparation: TSK standard polyethylene oxide manufactured by Tosoh Co., Ltd. (molecular weight: 900,000, 150,000, 100,000, 30,000) Polyethylene glycol manufactured by POLYMER ROBOLABO Co., Ltd. (molecular weight: about 1 2,000 '4,000, 1,000) [Measurement of film thickness] The film thickness of polyimine is a part of the peeling film of the cutter, and it is fully automatic. The micro shape measuring machine (ET4000A, manufactured by Kosaku Seisakusho Co., Ltd.) was measured by measuring the measurement force at 1 〇 μΝ and the scanning speed at 0.05 mm/sec. [Ultraviolet irradiation] The ultraviolet ray was irradiated onto the polyimide film by a filter with a light source of a high-pressure mercury lamp as a light source at a wavelength of 254 nm -40 - 201002762. Further, the ultraviolet illuminance on the polyimide film was multiplied by the exposure time as the exposure amount (J/cm 2 ) on the polyimide film. The illuminance of the above-mentioned ultraviolet ray was measured by a probe for Deep UV having a sensitivity of 253.7 nm and mounted on an illuminometer (Model 3 〇 6 by AI), and the obtained illuminance was 45 to 50 mW/cm 2 . [Measurement of contact angle] The contact angle is measured in a constant temperature and humidity environment (25 °C ± 2 °C, 50% RII ± 5%) using a fully automatic contact angle meter CA-W (Concord Interface Science ( ()))). Further, the contact angle of propylene glycol monomethyl ether (PGME) was measured by a liquid amount of 3. 〇 to 3.5 μl after standing for 5 seconds, and the contact angle of pure water was 3 μl at the standstill after standing. It was measured in 5 seconds. <Synthesis Example 1> Polymerization of polyimine precursor (PI-1) was carried out in a nitrogen stream, and in a 50 ml 4-necked flask, 1.8823 g (0.0094 mol) of 4,4'-diamino group was charged. Diphenyl ether (hereinafter referred to as 〇DA) and 0.3579 g (0.0006 mol) of 3,5-diaminobenzoic acid η-(perfluoro-n-hexyl)-n-undecyl ester (hereinafter referred to as 八? :11-6?), after dissolving in 23.58 g of heart methyl-2-pyrrolidone (hereinafter referred to as NMP), adding 1.921 g (0.0098 mol) of 1,2,3,4-cyclobutane tetracarboxylate Acid dianhydride (hereinafter referred to as 080 persons), which was stirred at 23 ° C for 12 hours for polymerization, and further diluted with NMP to obtain -6 - 201002762 to obtain the mass of the polyimine precursor (P I-1) % solution. The number average molecular weight (?n) and weight average molecular weight (Mw) of the obtained polyimine precursor (P1-1) were Mn = 35,200, Mw = 83,60 Å, respectively. <Synthesis Example 2> The ruthenium imine (PI-2) was polymerized in a nitrogen stream and charged with 〇dA 3.3 5 0 1 g (0.0 1 67325 mol) and 1.6164 g (0.004462 mol) in a 1 ml ml 4-neck flask. 2,2-bis(3-amino-4-methylphenyl)hexafluoropropane (post AMF), APC11-6F 0.6965 g (0.0011155 mol), after dissolving in 49.44 g NMP, add 6.698 1 g (0.022 3 1 mol) of 3,4-dicarboxy-1,2,3,4-tetra Hydrogen-1-naphthalene succinic dianhydride (hereinafter referred to as butyl octa), which was stirred at 50 ° for 24 hours to carry out polymerization, and the obtained polyaminic acid solution was diluted to 8 mass% with NMP. Adding 22.1 g of acetic anhydride and 1 〇.3 g of pyridine as a ruthenium amide catalyst to react at 50 ° C for 3 hours to obtain a polyimine solution. The solution was poured into a large amount of methanol to filter the white precipitate obtained. 'When dried, a white polyimine powder was obtained. The polyiminoimine powder was confirmed to be imidized by more than 90% by iH-NMR. 4 g of this powder was dissolved in 30 g of γ-butyrolactone and In a mixed solvent of 6 g of dipropylene glycol monomethyl ether, a solution of 1 〇 mass% of polyimine (ΡI - 2) was obtained. The number average molecular weight (Μη) and weight average molecular weight of the obtained polyimine (ΡΙ-2) (Mw) is Mn = 13,900, Mw = 28,400, respectively. -42 - 201002762 <Synthesis Example 3> Polymerization of polyimine (PI-3) in a nitrogen stream at 50 ml In a 4-necked flask, 2.7769 g (0.0095 mol) of 1,3-bis(4-aminophenoxy)benzene (hereinafter referred to as DA-4P) and APC11-6F 0.3122 g (0.0005 mol) were charged. After dissolving in 21.96 g of NMP, add 2 to 402 g (0.0099 mol) of bicyclo[3.3.0]-octane-2,4,6,8-tetracarboxy dianhydride (hereinafter referred to as 8-8), The polymerization reaction was carried out at 40 ° (: stirring for 24 hours, and the obtained polyaminic acid solution was diluted to 8 mass% with NMP. To 23 g of this solution, 8.5 g of acetic anhydride and 3 - 9 g of pyridine were added as a ruthenium catalyzed catalyst, and the mixture was reacted at 1 ° C for 3 hours to obtain a polyimine solution. This solution was poured into a large amount of methanol, and the resulting white powder was filtered and dried to obtain a white polyimine powder. This polyimine powder was confirmed to be imidized by 90% or more by 1 H-NMR. 3 g of this powder was dissolved in a mixed solvent of 22.5 g of γ-butyrolactone and 4.5 g of dipropylene glycol monomethyl ether to obtain a 10% by mass solution of polyimine (ΡΙ-3). The number average molecular weight (??) and weight average molecular weight (Mw) of the obtained polyimine (?-3) were Mn = 19,300 and Mw = 50,300, respectively. <Synthesis Example 4> Polymerization of polyimine precursor (PI-4) in a nitrogen gas stream was carried out in a 100 ml 4-necked flask, 〇d A 2.8234 g (0.0141 mol) and APC11-6F 0.5620 g. (0.0009 mol), after dissolving in 36_97 g of NMP, add 3.1084 g (〇.01425 mol-43-201002762) pyromellitic dianhydride (hereinafter referred to as PMDA), and stir it at 23 ° C for 5 hours. The polymerization reaction was further diluted with NMP to obtain an 8 mass% solution of a polyimine precursor (PI-4). The number average molecular weight (Mn) and weight average molecular weight (Mw) of the obtained polyimine precursor (P 1-4) were Mn = 15,500 and Mw = 35, respectively. <Comparative Synthesis Example 1 > Polyimine imine precursor (PI-5) was polymerized in a nitrogen stream, and a 1-ml alkane oxide of 1.0565 (0.040 mol) was charged in a 200 ml 4-necked flask. Base-2,4-diaminobenzene (hereinafter referred to as APC18), after dissolving in 1 27.6 g of NMP, adding 7.45 g (0.03 8 mol) of CBDA, and stirring at 12 ° C for 12 hours to carry out polymerization. The solution was diluted with NMP to obtain a 2% by mass solution of polyglycine (PI-5). The number average molecular weight (??) and weight average molecular weight (Mw) of the obtained polyamic acid (PI-5) were Mn = 1 6,000 and Mw = 48,000, respectively. <Comparative Synthesis Example 2 > Polymerization of polyimine precursor (ΡΙ·6) was carried out in a nitrogen stream with a ODA of 2.9856 g (0.01491 mol) and APC11-6F 0.0562 g in a 50 ml 4-necked flask. (0.00009 mol), after dissolving in 24.93 g of hydrazine, adding 2.7946 g (0.01425 mol) of CBDA, stirring it at 23 ° C for 12 hours, and then diluting with NMP to obtain a polybendimimine precursor (PI) -6) 6 mass% solution. The number average molecular weight (??) and the weight average molecular weight (Mw) of the obtained polyimine precursor (p1-6) were Mn = 14, 2, and Mw = 28,500, respectively. A list of tetracarboxylic dianhydrides and diamines used in the synthesis examples and comparative synthesis examples is shown below. [Table 1] (Table 1) Synthesis Example and Comparative Synthesis Example used in dicarboxylic acid di-hepatic acid and diamine tetracarboxylic acid 1 dianhydride------two/, --" two----- Amine-CBDA TDA BODA PMDA ODA DA-4P AMF APC11-6F _APC18_ PI-1 100 94 6 PI-2 100 75 20 5 PI-3 100 95 5 PI-4 100 94 6 PI-5 100 100 PI-6 100 99.4 0.6 *1: The numbers in the table indicate the molar fraction of the nominal tetracarboxylic dianhydride in the tetracarboxylic dianhydride, or the molar fraction of each diamine in all diamines. <Example 1: Ultraviolet sensitivity characteristic (contact angle of PGME) of a polyimide film formed of PI-1> On a glass substrate (2.5 cm square, thickness 〇.7 mm) with ITO attached A solution of PI-1 prepared in Synthesis Example 1 was dropped by a syringe equipped with a 0.2 μm pore filter, and coated by a spin coating method. Subsequently, it was heat-treated at 80 ° C for 5 minutes in the atmosphere to evaporate the organic solvent, followed by firing on a heated plate for 30 minutes to obtain a polyimide film having a film thickness of about 40 nm. The PGME contact angle of this polyimide film was measured. The polyimide film obtained in the same order was irradiated with -45-201002762 ultraviolet rays of an irradiation amount of 6 J/cm 2 to measure the contact angle of PGME. <Example 2 to Example 4, Comparative Example 1, and Comparative Example 2: Ultraviolet sensitivity characteristics (contact angle of Pgme) of a polyimide film formed of p丨_ 2 to PI_6 > Synthesis Example 2 was used. In the synthesis example 4, the comparative synthesis example 1 and the comparative synthesis example 2, the p I - 2 to PI - 6 solution was prepared, and the polyimide film was produced in the same procedure as in the example 1 'measured without irradiating ultraviolet rays, and irradiating 6 j / Cm 2 PGME contact angle after UV. The measurement results of the PGME contact angle are shown in Table 2. [Table 2] (Table 2) PGME contact angle number before and after ultraviolet irradiation using PI composition not irradiated 6J/cm2 Contact angle difference PI acid diamine*1 After irradiation Example 1 PI-1 CBDA ODA (94), APCll- 6F (6) 38.0 17.2 20.8 Example 2 PI-2 TDA ODA (75), AMF (20), APC11-6F (5) 33.0 12.0 21.0 Example 3 PI-3 BODA DA-4P (95), APC11-6F (5) 34.4 19.7 14.7 Example 4 PI-4 PMDA ODA (94), APC18-6F (6) 37.9 29.7 8.2 Comparative Example 1 PI-5 CBDA APC18 (100) 17.7 19.5 -1.8 Comparative Example 2 PI-6 CBDA 0DA (99.4), APC11- 6F(0.6) 25.0 21.3 3.7 ※丨: The number in parentheses indicates the molar fraction of each amine in all diamines. As shown in Table 2, Examples 1 to 4 which are equivalent to the cured film obtained from the polyimide film precursor or the polyimine in the underlayer film composition for image formation of the present invention exhibit liquid repellency, The amount of change in hydrophilicity and hydrophobicity caused by ultraviolet irradiation is 8 to 21°, and the contact angle difference (5° or more) at which an image can be formed can be obtained. 0 - 46 - 201002762 In addition, the polyimine obtained from PI - 5 The film (Comparative Example 1) showed no liquid repellency. Further, the hydrophilicity was not changed by ultraviolet irradiation. On the contrary, the contact angle after ultraviolet irradiation is only slightly increased, so that an image cannot be formed. Further, the polyimine film obtained by PI-6 (Comparative Example 2) showed liquid repellency, but the amount of change in hydrophilicity and hydrophobicity caused by ultraviolet irradiation was as small as 3.7. , but can not form the contact angle difference of the image. <Examples 5 to 8: Zixi t-line sensitivity characteristics (water contact angle) of a polyimide film formed of PI-1 to PI-4 > PI prepared by Synthesis Example 1 to Synthesis Example 4 -1 to PI-4 solution A polyimine film was produced in the same manner as in Example 1, and the contact angle with water after irradiation with ultraviolet rays of 40 J/cm 2 was measured. The results of measurement of the water contact angle are shown in Table 3. [Table 3] r-IA 3) Water contact angle number before and after ultraviolet irradiation ----- Use PI composition without exposure 40J/cm2 Contact PI acid diamine*1 After irradiation, the angular difference PI-1 CBDA 0DA(94) , APC11-6F (6) 96.7 23.3 73.4 PI-2 TDA ODA (75), AMF (20), APC11-6F (5) 96.4 <5.0 > 91.4 PI-3 BODA DA-4P (95), APC11-6F ( 5) 98.5 6.8 91.7 8 PI-4 PMDA ODA (94), APC18-6F (6) 98.7 22.4 76.3: Numbers in parentheses indicate the molar fraction of each amine in all diamines. As shown in Table 3, the fifth embodiment to the eighth embodiment of the cured film obtained from the polyimine precursor or the polyimine in the film-forming underlayer film composition of the present invention -47-201002762 A large contact angle difference can be obtained by ultraviolet irradiation. That is, the underlayer film for image formation of the present invention exhibits an image forming liquid which can be used for various surface tensions. <Example 9: Specific dielectric ratio of polyimine film formed by PI-2> On a glass substrate with ITO (2.5 cm square 'thickness 〇.7 mm), with 0 · 2 μm A solution of the PI-2 prepared in Synthesis Example 2 was dropped onto the syringe of the pore filter, and coated by a spin coating method. Subsequently, it was heated in a hot plate at 80 ° C for 5 minutes in the atmosphere to volatilize the organic solvent, followed by heating at 1800 ° C for 60 minutes to obtain a polyimide film having a film thickness of about 40 nm. Then, in order to obtain good contact between the ITO electrode and the probe of the measuring device, one part of the polyimide film was removed to expose the ITO thick, and a vacuum vapor deposition apparatus was used to laminate the film on the polyimide film with a diameter of 1.0 mm and a film on the ITO. Aluminum electrode with a thickness of lOOnm. The vacuum vapor deposition conditions at this time were room temperature, a vacuum degree of 3×1 (T3Pa or less, and an aluminum vapor deposition rate of 33 nm/sec or less. Thus, an electrode was formed on the upper and lower sides of the polyimide film to prepare a polyimine film. The sample for electric power evaluation has a specific dielectric constant of 3 _0 for the specific dielectric constant of the polyimide film, and although the water repellency is high, it is ensured that it can be used as a gate insulating film in an organic transistor. The specific dielectric constant of 0 or more indicates that the excellent characteristics are obtained. Further, the leakage current density when the electric field MV/Cm is applied is 2x10 - 1 () A / Cm2, and it is confirmed that β 卩 is used as the gate insulation of the organic transistor. The film is absolutely -48-201002762. The edge is practically no problem. Moreover, in the present embodiment, the specific dielectric ratio of the polyimine film is determined by using AG-4311B' manufactured by Ando Electric Co., Ltd. The electrostatic capacitance was measured in a nitrogen atmosphere at a frequency of 1 KHz. The measurement of the leakage current density of the polyimine film was performed using HP4156C manufactured by AGILENT TECHNOLOGY. <Comparative Example 3: by PI -5 ratio of dielectric ratio of film-forming polyimine film> except using comparative synthesis example 1 In the PI-5 solution prepared, the film was calcined at a temperature of 250 ° C for 60 minutes in a vacuum, and the film thickness was 270 nm. The same method as in Example 9 was used to evaluate the polyimide film formed by PI-5. The specific dielectric ratio of the amine film. The leakage current density of the polyimide film formed by PI-5 is lxl (T1G A/crn2 or less, but the specific dielectric ratio is 2.7. It is intended to be used as a gate insulating film). The specific dielectric constant is low, and although the performance as an underlayer film for image formation can be obtained, it cannot be used as a gate insulating film. <Synthesis Example 5> Polymerization of polyimine precursor (PI-7) in a nitrogen stream In a 100 ml 4-necked flask, OD A 1.7621 g (0.008 8 m) and APC11-6F 0.7158 g (0.0012 m) were charged, dissolved in 24.93 g of NMP, and CBDA 1.9219 g (0.0098 m) was added. This was stirred at 23 ° C for 12 hours to carry out a polymerization reaction, and further diluted with NMP to obtain 6 masses of a polyimine precursor (P 7-7). /〇 solution. -49- 201002762 The obtained polyimine precursor The number average molecular weight (?η) and the weight average molecular weight (Mw) of (PI-7) were Mn = 29, 63 0 and Mw = 67,400, respectively. <Synthesis Example 6> The polyimine (PI-8) was polymerized in a nitrogen stream and charged with ODA 3.4366 g (0.01716 mol), AMF 1.6151 g (0.004458 mol), APC 11.6 F 0.4176 g in a 100 ml 4-neck flask. 0.000669 mol), after dissolving in 48.65 g of NMP, 6.6927 g (0.02229 mol) of TDA was added, and the mixture was stirred at 50 ° C for 24 hours to carry out polymerization, and the obtained polyaminic acid solution was diluted to 8 mass % with NMP. To 148 g of this solution, 22.2 g of acetic anhydride and 10.3 g of pyridine were added as a ruthenium catalyzed catalyst, and the mixture was reacted at 50 ° C for 3 hours to obtain a polyimine solution. This solution was poured into a large amount of methanol, and the resulting white precipitate was filtered and dried to give a white polyimine powder. This polyimine powder was confirmed to be imidized by 90% or more by 1H-NMR. 4 g of this powder was dissolved in a mixed solvent of 3 g of γ-butyrolactone and 6 g of dipropylene glycol monomethyl ether to obtain a 10% by mass solution of polyimine (ΡΙ-8). The number average molecular weight (??) and weight average molecular weight (Mw) of the obtained polyimine (?-8) were Mn = 15,300 and Mw = 31,500, respectively. <Synthesis Example 7 > Polyimine precursor (PI-9) was polymerized in a nitrogen stream, and placed in a 100 halo: liter 4-neck flask, loaded with ODA 3.5683 - 50 - 201002762 g (0.01782 mol), 〇_ill3g (0.00018 mol) of ι_(4_all gas octyl)phenoxy-2,4-diaminobenzene (hereinafter referred to as DA-1), dissolved in 27·99 g ΝΜΡ after 'join CBDA 3.3182 g (0.01692 mol), which was stirred at 23 ° C for 12 hours to carry out a polymerization reaction, and further diluted with hydrazine to obtain an 8 mass% solution of a polyimine precursor (PI-9). The number average molecular weight (Mn) and weight average molecular weight (Mw) of the obtained polyimine precursor (PI-9) were Mn = 31,500 and Mw = 67,200, respectively. <Synthesis Example 8 > Polyimine precursor (PI-10) was polymerized in a nitrogen stream, and placed in a 100 ml 4-necked flask with ODA 1.9624 g (0.0098 mol), DA- 1 0.1237 g (0·0002 mol), dissolved in 15.72 g, added CBDA 1.8434 g (0.0094 m), stirred at 23 ° C for 12 hours for polymerization, and then diluted with hydrazine to obtain poly An 8 mass% solution of the quinone imine precursor (PI-10). The number average molecular weight (??) and weight average molecular weight (Mw) of the obtained polyimine precursor (PI-10) were Mn = 3 1,200 and Mw = 68,100, respectively. <Synthesis Example 9 > Polyimine (PI-1 1) was polymerized in a nitrogen stream, and placed in a 100 ml 4-necked flask, loaded with ODA 5.887 -51 - 201002762 g (0.0294 mol), DA -丨0.371 g (0.0006 mol), after dissolving 60.88 g of NMP, TDA 8.9631 g (0.03 mol) was added. The polymerization was carried out by stirring at 50 ° C for 24 hours, and the obtained polyamid NMP was diluted to 8 mass%. To 170 g of this solution, 27.8 g of acetic anhydride and 12.9 g were added as a ruthenium catalyzed catalyst, and reacted at 50 ° C for 3 hours to obtain a polyimine. This solution was poured into a large amount of methanol, and the resulting white precipitate was filtered and dried to give a white polyimine powder. This polyimine powder was confirmed to be 90% or more imidized by NMR. 4 g of this powder was dissolved in a mixed solvent of 30 g of γ-butyrolactone and 6 g of dipropylene glycol monomethyl ether to obtain a 10% by mass solution of polyimine (PI-U). The number average molecular weight (??) and weight molecular weight (Mw) of the obtained polyimine (?-11) were Mn = 30,470 and Mw = 66,900, respectively. <Synthesis Example 1 0 > Polyimine (pi-12) was polymerized in a nitrogen gas stream in a 1 mL-neck 4-necked flask, and charged with DA-3 8 g (0.0196 mol), DA-1 0.2473 g (0.0004 mol), after dissolving 5 6.7 g of NMP, add TDA 5.8 8 5 3 g (〇.0196 mol), disturb at 50 ° C for 24 hours into fj polymerization 'the resulting polyaminic acid solution The NMP was diluted to 8 mass%. To this solution I77 g was added 1 9.3 g of acetic anhydride, 8.9 g of the eye: for the imidization catalyst, the reaction was carried out at 50 ° C for 3 hours to obtain the poly-branched stomach, and the solution was poured into a large amount of methanol, and filtered. The white sputum solution was obtained by dry-solving the solution in a pyridine solution, and an average of 0458 solution was obtained. After drying -52-201002762, a white polyimine powder was obtained. This polyimine powder was confirmed to be imidized by more than 90% by 1 h-nmr. 4 g of this powder was dissolved in a mixed solvent of 52.67 g of γ-butyrolactone and 1 g of dipropylene glycol monomethyl ether to obtain a 6 mass% solution of polyimine (Ρ I - 12 ). The number average molecular weight (?n) and weight average molecular weight (Mw) of the obtained polyimine (?-1-12) were Mn = 19,700 'Mw = 47,960, respectively. <Synthesis Example 1 1 > Polyimine (PI-13) was polymerized in a nitrogen stream and charged with DA-3 5.1764 g (0.01261 mol) and DA-1 0.2411 g in a 100 ml 4-neck flask. (0.00039 mol), after dissolving in 3 6.77 g of NMP, add TDA 5.1 764 g (0.0 1 25 7 1 mol), stir it at 50 ° C for 24 hours to carry out polymerization, and obtain the poly-proline solution as NMP. Dilute to 8 mass%. To 130 g of this solution, 11.6 g of acetic anhydride and 5.4 g of pyridine were added as a ruthenium catalyzed catalyst, and the mixture was reacted at 50 ° C for 3 hours to obtain a polyimine solution. This solution was poured into a large amount of methanol, and the resulting white precipitate was filtered and dried to give a white polyimine powder. This polyimine powder was confirmed to be imidized by 90% or more by 1 H-NMR. 4 g of this powder was dissolved in a mixed solvent of 52.67 g of γ-butyrolactone and 1 g of dipropylene glycol monomethyl ether to obtain a 6 mass% solution of polyimine (Ρ 1-1 3). The number average molecular weight (?n) and weight average molecular weight (Mw) of the obtained polyimine (?1-13) were Mn = 20,970 and Mw = 51,220, respectively. -53-201002762 <Comparative Synthesis Example 3 > Polymerization of the polyaniline precursor (PI-14) in a nitrogen stream, in a 50 ml 4-necked flask, charged with DA-3 1. 〇 673 g (0.0026 Moer) and da- 1 0.8656 g (0.0014 mol), after dissolving in 15.31 g of NMP, adding 0.7688 g (0.00392 mol) of CBDA, stirring it at 23 °C for 12 hours for polymerization, and then diluting with NMP' A 6 mass% solution of the polyimine precursor (P1-1 4) was obtained. The number average molecular weight (?η) and the weight average molecular weight (Mw) of the obtained polyimine precursor (PI-14) were Mn = 20,1 30 and Mw = 4,28,0, respectively. The following is a list of tetracarboxylic dianhydrides and diamines used in Synthesis Example 5 to Synthesis Example 11 and Comparative Synthesis Example 3. The numerical value in the table indicates the molar fraction when the amount of the tetracarboxylic dianhydride and the diamine added is set to 1 Torr. [Table 4] (Table 4), the tetracarboxylic acid di-hepatic acid and diamine tetracarboxylic acid-dianhydride diamine CBDA TDA ODA AMF APC11-6F DA-3 DA-1 PI-7 used in the examples and comparative synthesis examples 100 88 12 PI-8 100 77 20 3 PI-9 100 99 1 PI-10 100 98 2 PI-11 100 98 2 PI-12 100 98 2 PI-13 100 97 3 PI-14 100 65 35 ※丨: Table The internal number indicates the molar fraction of each of the tetracarboxylic dianhydrides in all of the tetracarboxylic dianhydrides, or the molar fraction of each of the diamines in all of the diamines. -54-201002762 <Synthesis Example 12> Polyimine (PI-15) was polymerized in a nitrogen gas stream, and charged with a p-phenylenediamine of 4.86 g (0.045 mol), 1 - 74 in a 200 ml 4-necked flask.克(0.005 mol) of 4-hexadecyloxy-1,3-diaminobenzene, after dissolving in 122.5 g of NMP, adding TDA 1 5.0 1 g (0.0 5 mol), stirring at room temperature The polymerization reaction was carried out for 10 hours, and the obtained polyaminic acid solution was diluted to 8 mass% with NMP. To the solution of 50 g, 10 0 g of acetic anhydride and 5.0 g of pyridine were added as a ruthenium catalyzed catalyst, and the mixture was reacted at 50 ° C for 3 hours to obtain a polyimine solution. This solution was poured into a large amount of methanol, and the resulting white precipitate was filtered and dried to give a white polyimine powder. This polyimine powder was confirmed to be imidized by 90% or more by 1 H-NMR. 4 g of this powder was dissolved in a mixed solvent of 52.67 g of γ-butyrolactone and 10 g of dipropylene glycol monomethyl ether to obtain a 6 mass% solution of polyimine (ΡΙ-15). The number average molecular weight (??) and weight average molecular weight (Mw) of the obtained polyimine (?-15) were Mn = 18,000 and Mw = 54,000, respectively. <Example 1 〇: Observation of coating property change of silver fine particle dispersion (W4A) of polyimide film formed of PI-1 > Glass substrate with ITO (2.5 cm square, thickness: 0.7 mm) A solution of PI-1 prepared in Synthesis Example 1 was dropped on a syringe with a 0.2 μm pore filter, and coated by a spin coating method. Then, it was heated in a hot plate at 80 ° C for 5 minutes in the atmosphere to evaporate the organic solvent, and then fired at -55-201002762 180 ° C for 30 minutes to obtain a polythene having a film thickness of about 4〇〇11111. Imine film. On the polyimine film, a dispersion of 3 μm of silver fine particles (product name W4A 'manufactured by Sumitomo Electric Industries Co., Ltd.) was dropped to show that the polyimide film had liquid repellency to the silver fine particle dispersion. The polyimine film obtained in the same order was irradiated with ultraviolet rays of 6 J/cm 2 irradiation, and a 3 μm silver fine particle dispersion liquid was dropped on the polyimide film to show that the polyimide film had a pro-silver dispersion. Liquid. The polyimine film obtained from Pi-1 can control the liquid-liquid lyophilic property of the silver microparticle dispersion by irradiating ultraviolet rays. <Example 1 1 to Example 1 9. Comparative Example 4 to Comparative Example 6: Applicability change observation of a polyimide film formed of PI-1 to PI-3, PI-5 to PI-13 > Using a solution of PI-2, pi-3, PI-5 to PI-14, a polyimide film was produced in the same procedure as in Example 1, and a polyimide film was observed after irradiation with ultraviolet rays and irradiation of ultraviolet rays of 6 J/cm 2 . Liquid-repellent _ lyophilicity of silver fine particle dispersion. The results are shown in Table 5. -56 - 201002762 [Table 5] (Table 5) For the wettability change of the silver fine particle dispersion (W4A), the PI acid diamine wetness change was used. Example 10 PI-1 CBDA ODA (94), APC11-6F (6) There are Example 11 PI-2 TDA ODA (75), AMF (20), APC11-6F (5) There are Example 12 PI-3 BODA DA-4P (95), APC11-6F (5) There is Comparative Example 4 PI-5 CBDA APC18(100) Μ y ν Comparative Example 5 PI-6 CBDA ODA (99.4) > APC11-6F(0.6) te j \ w Example 13 PI-7 CBDA ODA (88), APC11-6F ( 12) Example 14 PI-8 TDA ODA (77), AMF (20), APC11-6F (3) There are Example 15 PI-9 CBDA ODA (99) 'DA-1 (1) Having Example 16 PI -10 CBDA ODA(98) 'DA-1(2) Having Example 17 PI-11 TDA ODA(98) 'DA-1(2) Having Example 18 PI-12 TDA DA-3(98), DA- 1(2) There are Examples 19 PI-13 TDA DA-3 (97), DA-1 (3) Yes ※丨: The number in parentheses indicates the molar fraction of each amine in all diamines ※2: Jujuya When the amine film is irradiated with ultraviolet rays at 6 J/cm 2 , the polyilylimine film changes from a liquid-repellent property to a lyophilic property as a wet property, and the other has no change in wettability. As shown in the above Table 5, Example 1 of the cured film obtained by the polyimine precursor or the polyimine corresponding to the underlayer film composition for image formation of the present invention is irradiated to Example 19 by irradiation. Ultraviolet rays have a change in the wettability of the silver fine particle dispersion. An image can be formed by utilizing changes in wetness. On the other hand, the polyimide film (Comparative Example 4 and Comparative Example 5) obtained from PI-5 and PI-6 did not change in wettability even when irradiated with ultraviolet rays. -57-201002762 [Polymer Blend] <Preparation of Composition 1 : Modulation of Underlayer Film Composition for Image Formation> 6 wt% of Polyimine (PI-15) Prepared by Synthesis Example 12 8.5 g of the solution was mixed with 1.5 g of a 6 wt% solution of the polyimine (PI-12) prepared in Synthesis Example 10, and stirred at room temperature for 6 hours to obtain a composition A. <Preparation Example 2 of Composition; Preparation of Underlayer Film Composition for Image Formation> 9 g of a 6 wt% solution of polyimine (PI-15) prepared in Synthesis Example 12 was prepared in Synthesis Example 1 1 g of a 6 wt% solution of polyimine (PI·13) was mixed and stirred at room temperature for 6 hours to obtain a composition B. <Preparation Example 3 of Composition: Preparation of Underlayer Film Composition for Image Formation> 8.5 g of a 6 wt% solution of polyimine (PI-15) prepared in Synthesis Example 12 and Modification of Synthesis Example 11 15 g of a 6% solution of polyimine (?1-13) was mixed and stirred at room temperature for 6 hours to obtain a composition C. <Preparation Example 4 of Composition: Preparation of Underlayer Film Composition for Image Formation> 8 g of a 6 wt% solution of the polyimine (PI -1 5 ) prepared in Synthesis Example 1 and Synthesis Example 1 2 gram of a 6 wt% solution of a prepared polyimine (PI-1 3) was mixed and stirred at room temperature for 6 hours to obtain a composition D. Preparation Example 5 of the composition of the composition: Preparation of the underlayer film composition for image formation> A 6 wt% solution of the polyfluorene imine (P 1 -1 5 ) prepared in Synthesis Example 1 7 · 5 g and synthesized Example 1 A 6 wt% solution of the prepared polyimine (PI-1) was mixed with 2 · 5 -58 - 201002762 g, and stirred at room temperature for 6 hours to obtain a composition E. <Preparation Example 6 of Composition; Preparation of Underlayer Film Composition for Image Formation> 7 g of a 6 wt% solution of polyimine (PI-15) prepared in Synthesis Example 12 was prepared by Synthesizing Example 1 3 g of a 6 wt% solution of polyimine (PI-13) was mixed and stirred at room temperature for 6 hours to obtain a composition F. <Preparation of Composition 7: Preparation of Underlayer Film Composition for Image Formation> 9 g of a 6 wt% solution of the polyimine (PI-15) prepared in Synthesis Example 12 and Comparative Synthesis Example 3 were prepared. 1 g of a 6 wt% solution of polyimine (PI-14) was mixed and stirred at room temperature for 6 hours to obtain a composition G. <Example 20: Patterning of electrode> On a glass substrate (2.5 cm square, thickness: 0.7 mm) with ΙΤ.0, the composition was dropped by a syringe with a 0.2 μm pore filter. The composition A prepared in Preparation Example 1 was applied by a spin coating method. Subsequently, in an atmosphere, the plate was heat-treated at 80 ° C for 5 minutes to volatilize the organic solvent, followed by heating at 180 ° C for 30 minutes to obtain a polyimide film having a film thickness of about 450 nm. The polyimide film was irradiated with ultraviolet rays 6 J/cm 2 through a mask. Then, a very small amount of the silver fine particle dispersion liquid is dropped onto the ultraviolet ray irradiation portion, and the lyophilic property to the ultraviolet ray irradiation portion of the polyimide film is displayed. Subsequently, the plate was fired at 180 ° C for 60 minutes to form a silver electrode having a film thickness of 50 nm. A micrograph of this silver electrode is shown in Fig. 2. -59-201002762 <Example 2 1 to Example 2 7: Patternability of Electrode> In addition to the use of the composition B to the composition F and the solution of PI -1 2 to PI -1 3 Example 20 The polyimine was formed into a film in the same order, and a silver fine electrode was used to form a silver electrode. All polyimide membranes can form silver electrodes with an electrode spacing of 1 μm. <Comparative Example 7 > A polyimine was formed in the same manner as in Example 2 except that the solution of the composition G was used, and a silver electrode was attempted to be formed using the silver fine particle dispersion. The polyimide film obtained from the solution of the composition G showed water repellency in the ultraviolet ray irradiation portion, and the desired silver electrode could not be formed (Fig. 3). <Comparative Example 8 to Comparative Example 9 > Polyimine was formed into a film in the same order as in Example 2 except that the PI-5 to PI-6 solution was used, and a silver electrode was attempted to be formed using the silver fine particle dispersion. The polyimine film obtained from the solution of PI - 5 to PI - 6 forms an electrode with or without ultraviolet light, and the desired silver electrode cannot be formed. -60-201002762 [Table 6] Table 6 Patterning blend ratio (mass%) of silver fine particle dispersion of the polyimide film of the present invention Electrode pattern Example 20 Composition A PI-15/PI- 12(15) Forming Example 21 Composition B PI-15/PI-13 (10) Forming Example 22 Composition C PI-15/PI-13 (15) Forming Example 23 Composition D PI- 15/PI-13(20) Forming Example 24 Composition E PI-15/PI-13 (25) Forming Example 25 Composition F PI-15/PI-13 (30) Forming Example 26 PI -12 PI-12(100) Formable Example 27 PI-13 PI-13(100) Formable Comparative Example 7 Composition G PI-15/PI-14 (10) Cannot form Comparative Example 8 PI-5 PI- 5 (100) Cannot form Comparative Example 9 PI-6 PI-6 (100) Cannot form <Example 2 8 : Specific resistance ratio dielectric measurement> On ITO-attached glass substrate (2_5 cm square, thickness) On 0.7 mm), the composition A prepared in the composition preparation example 1 was dropped by a syringe having a 0.2 μm pore filter, and coated by a spin coating method. Subsequently, it was heat-treated at 80 ° C for 5 minutes in the atmosphere to evaporate the organic solvent, followed by firing at 180 ° C for 30 minutes to obtain a polyimide film having a film thickness of about 45 nm. Next, using a vacuum vapor deposition apparatus, an in-situ electrode having a diameter of 1.0 mm to 2.0 mm and a film thickness of 100 nm was laminated on the polyimide film to prepare an insulation evaluation of the polyimide film disposed on the upper and lower sides of the polyimide film. Use the sample. The vacuum evaporation conditions at this time were room temperature, vacuum degree 3x1 (less than T3Pa, and aluminum vapor deposition rate of 0.5 nm/sec or less. -61 - 201002762) The sample was used at room temperature and humidity of 45% ± 5%. The current-voltage characteristic was measured, and a voltage was applied to the holding time of 3 seconds from the positive electrode voltage of 0 V to 80 V on the aluminum electrode side, and the current was applied to the electric field at a frequency of 1 MV/cm. The results of the measurement of the group-to-specific dielectric ratio are shown in Table 7. <Example 29 to Example 35> Except that the composition B was used to the composition F and the solutions of PI-12 to PI-13, Example 28 was used. The polyimide film was formed into a film in the same order, and the specific resistance and the specific dielectric constant were measured. The results are shown in Table 7. [Table 7] Table 7 Specific resistance and specific dielectric ratio of the polyimide film of the present invention (% by mass) Specific resistance (Ω cm) Specific dielectric ratio Example 28 Composition A PI-15/PI-12 (15) > 1015 3.2 Example 29 Composition B PI-15/PI-13 (10) >1015 3.2 Example 30 Composition C PI-15/PI-13(15) > 1015 3.2 Example 31 Composition D PI-15/PI-13(20) > 1015 3.2 Example 32 Composition E PI-15/PI-13(25) >1 015 3.1 Example 33 Composition F PI-15/PI-13 (30) > 1015 3.1 Example 34 PI-12 PI-12 (100) > 1015 3 Example 35 PI-13 PI-13 (100) >1015 3 <Example 3 6: Preparation of organic transistor> On the silver electrode obtained in Example 20, poly(3-hexylthiophene-2,5-diyl) was adjusted (obtained by MERCK, after The abbreviated as P3HT) is a coating solution of P 3 HT dissolved in xylene at a concentration of 2% by mass to 62-201002762, and is subjected to a spin coating method on the polyimine film at an oxygen concentration of 5.5 ppm or less. The coating solution was applied under a nitrogen atmosphere. Subsequently, in order to completely evaporate the solvent, the semiconductor layer was formed by heat treatment at 1 Torr for 60 minutes under vacuum to complete the organic thin film transistor. The organic thin film transistor obtained above was obtained. The electrical characteristics are evaluated by measuring the change in the gate current of the gate voltage. In detail, 'the source-drain voltage (VD) is set to -40V, and the gate voltage (VG) is from +30V to - 30V, each 2V step change, after the current is very stable, hold the voltage for 1 second, and then measure it as the drain current and record it. Using a semiconductor parameter analyzer HP4156C (AGILENT TECHNOLOGY (shares)) was performed. When the gate voltage is applied to the negative erbium, a large increase in the drain current is observed, and it is confirmed that P3HT can function as a p-type semiconductor (Fig. 4). Next, the relationship between the source current and the source voltage when the gate voltage (VG) was changed from +20 V to -30 V in steps of 10 V was measured to confirm that the organic transistor normally functions (Fig. 5). Generally, the drain current Id in the saturated state can be expressed by the following equation. That is, the mobility V of the organic semiconductor can be obtained by plotting the square root of the absolute 値 of the drain current 1D as the vertical axis and the slope when the gate voltage V G is plotted as the horizontal axis.
ID = WCp(VG-VT)2/2L -63- 201002762 上述式中’ W爲電晶體之通道寬度,L爲電晶體之通 道長度’ C爲閘極絕緣膜之靜電電容,VT爲電晶體之閾値 電壓,μ爲移動度。P3HT移動度/z對該式原來計算後成 爲2xl(T13 cm2/Vs。又’閾値電壓爲16V,於開狀態與關 狀態之比(開/關)爲1 02之等級(表8 )。 又’有機薄膜電晶體電氣特性,爲除去週邊溼度極活 性物質之影響,故於元件完成後,儘速移至真空中(真空 度5xl(T2Pa以下)’放置約30分鐘後,真空度保持在5x l(T2Pa以下藉此測定。 <實施例37 :有機電晶體> 除使用於實施例2 1所得之銀電極以外,使用與實施 例3 6同樣順序製作有機電晶體。 <實施例38 :有機電晶體> 除使用於實施例27所得之銀電極以外,使用與實施 例3 6同樣順序製作有機電晶體。 [表8] 表8實施例3 6至3 8製作之有 機電晶體特相 摻合比(質量%) 移動度(cm2/Vs) 開/關比 Vt(V) 實施例36 組成物A PI-15/PI-12(15) 2xl〇·3 >102 16 實施例37 組成物B PI-15/PI-13(10) 2x1 (Γ3 >102 15 實施例38 PI-13 PI-13(100) 3x1 Ο·3 >102 19 -64- 201002762 本發明之聚醯亞胺可使用親疏水之差進行電極之圖型 化’顯示可製作通道長1 〇微米之有機電晶體。 再者,顯示1015〇cm以上之高絕緣性及3.0以上之比 介電率,不僅可作爲圖像形成用底層膜,亦顯示具有作爲 有機電晶體用閘極絕緣膜之高的性能。 由以上結果,顯示由含有由含氟烷基之聚醯亞胺前驅 物及/或由該聚醯亞胺前驅物所得之聚醯亞胺之本發明圖 像形成用底層膜組成物所得之硬化膜,其撥水性極高,比 介電率亦高,因此於作爲閘極絕緣膜使用時亦有用。 【圖式簡單說明】 圖1爲顯示具有本發明之圖像形成用底層膜之有機電 晶體之構造槪略剖面圖。 圖2爲實施例20所得之銀微粒子分散液之圖型化例 〇 圖3爲比較例7所得之銀微粒子分散液之圖型化例。 圖4爲實施例36中,顯示由組成物A所得之聚醯亞 胺膜兼作爲圖像形成用底層及閘極絕緣膜之有機電晶體之 汲極電流(Drain Current)與閘極電壓(Gate Voltage)之關係 圖表。 圖5爲實施例3 6中,顯示由組成物A所得之聚醯亞 胺膜兼作爲圖像形成用底層及閘極絕緣膜之有機電晶體之 汲極電流(Drain Current)與汲極電壓(Drain Voltage)之關 係圖表。 -65- 201002762 【主要元件符號說明】 1 :基板 2 :閘極電極 3 :兼作電極形成用底層膜極閘極絕緣膜 4:源極電極、汲極電極 5 :半導體層 -66 -ID = WCp(VG-VT)2/2L -63- 201002762 In the above formula, 'W is the channel width of the transistor, L is the channel length of the transistor' C is the electrostatic capacitance of the gate insulating film, and VT is the transistor Threshold 値 voltage, μ is mobility. The P3HT mobility/z is 2xl (T13 cm2/Vs) and the 'threshold voltage is 16V. The ratio of the on state to the off state (on/off) is 1 02 (Table 8). 'The electrical properties of the organic thin film transistor are affected by the removal of the surrounding humidity and the active material. Therefore, after the component is completed, it is moved to the vacuum as soon as possible (the vacuum degree is 5xl (below T2Pa). After leaving for about 30 minutes, the vacuum is kept at 5x. l (Measured by T2Pa or less. <Example 37: Organic transistor> An organic transistor was produced in the same manner as in Example 36 except that the silver electrode obtained in Example 21 was used. <Example 38 : Organic transistor > An organic transistor was produced in the same manner as in Example 36 except that the silver electrode obtained in Example 27 was used. [Table 8] Table 8 Example 3 6 to 3 8 Phase blend ratio (% by mass) Mobility (cm2/Vs) On/off ratio Vt(V) Example 36 Composition A PI-15/PI-12(15) 2xl〇·3 > 102 16 Example 37 Composition B PI-15/PI-13(10) 2x1 (Γ3 > 102 15 Example 38 PI-13 PI-13(100) 3x1 Ο·3 >102 19 -64- 20100 2762 The polyimine of the present invention can be patterned by using the difference in hydrophilicity and hydrophobicity to show that an organic transistor having a channel length of 1 μm can be produced. Further, it exhibits high insulation of 1015 〇cm or more and 3.0 or more. The specific dielectric ratio can be used not only as an underlayer film for image formation but also as a high performance as a gate insulating film for an organic transistor. From the above results, it is shown to be a precursor of a polyfluorene containing a fluorine-containing alkyl group. And the cured film obtained from the underlayer film composition for image formation of the present invention obtained from the polyimine imide obtained from the polyimine precursor, which has a high water repellency and a high specific dielectric ratio, and thus Fig. 1 is a schematic cross-sectional view showing the structure of an organic transistor having an underlayer film for image formation of the present invention. Fig. 2 is a view showing a silver microparticle obtained in Example 20. Fig. 3 is a pictorial example of the silver fine particle dispersion obtained in Comparative Example 7. Fig. 4 is a view showing the polyimine film obtained from the composition A as an image in Example 36. Forming the bottom layer and the gate insulating film Graph of the relationship between the drain current (Drain Current) and the gate voltage of the organic transistor. Fig. 5 shows that the polyimide film obtained from the composition A is also used for image formation in Example 36. A graph of the relationship between the drain current (Drain Current) and the drain voltage of the organic transistor of the bottom layer and the gate insulating film. -65- 201002762 [Description of main component symbols] 1 : Substrate 2 : Gate electrode 3 : Also used as an underlying film gate insulating film for electrode formation 4: Source electrode, drain electrode 5 : Semiconductor layer -66 -
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008059534 | 2008-03-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201002762A true TW201002762A (en) | 2010-01-16 |
TWI461461B TWI461461B (en) | 2014-11-21 |
Family
ID=41065217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098107837A TWI461461B (en) | 2008-03-10 | 2009-03-10 | Underlayer film composition for forming image |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5445788B2 (en) |
KR (1) | KR101547588B1 (en) |
CN (3) | CN103788653A (en) |
TW (1) | TWI461461B (en) |
WO (1) | WO2009113549A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI453235B (en) * | 2008-10-23 | 2014-09-21 | Nissan Chemical Ind Ltd | Underlayer film for forming image |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5678492B2 (en) * | 2010-06-30 | 2015-03-04 | 日産化学工業株式会社 | Pattern image forming method |
EP2636056B1 (en) * | 2010-11-01 | 2018-07-04 | Basf Se | Polyimides as dielectric |
KR20190040384A (en) * | 2012-11-16 | 2019-04-17 | 닛산 가가쿠 가부시키가이샤 | Polyimide resin film and electronic-device substrate comprising polyimide resin film |
US10508181B2 (en) * | 2012-12-18 | 2019-12-17 | Nissan Chemical Industries, Ltd. | Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound |
CN103227190B (en) * | 2013-04-28 | 2015-06-10 | 京东方科技集团股份有限公司 | Pixel definition layer, preparation method thereof, OLED substrate and display device |
JP6248506B2 (en) * | 2013-09-25 | 2017-12-20 | Jnc株式会社 | Composition for forming cured film |
CN105219080A (en) * | 2014-06-24 | 2016-01-06 | Tcl集团股份有限公司 | Organic/Inorganic Composite Nanomaterials and its production and use and TFT |
JP6926939B2 (en) * | 2017-10-23 | 2021-08-25 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor devices |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02225522A (en) * | 1989-02-27 | 1990-09-07 | Toray Ind Inc | Fluorinated polyimide and polyimide acid |
US5186985A (en) * | 1991-04-04 | 1993-02-16 | E. I. Du Pont De Nemours And Company | Liquid crystal displays of high tilt bias angles |
JP3978754B2 (en) * | 1997-12-29 | 2007-09-19 | チッソ株式会社 | Polyamic acid composition, liquid crystal alignment film, and liquid crystal display element |
KR100839393B1 (en) * | 2001-07-26 | 2008-06-19 | 닛산 가가쿠 고교 가부시키 가이샤 | Polyamic acid resin composition |
US20080237580A1 (en) * | 2004-03-22 | 2008-10-02 | Suguru Okuyama | Organic Semiconductor Element and Organic El Display Device Using the Same |
JP2006021491A (en) * | 2004-07-09 | 2006-01-26 | Ricoh Co Ltd | Laminated structure, optics using laminated structure, display element, arithmetic element and method for manufacturing these elements |
JP4678574B2 (en) * | 2004-08-23 | 2011-04-27 | 株式会社リコー | Multilayer structure, electronic element using the multilayer structure, electronic element array, and display device |
US8569742B2 (en) * | 2004-12-06 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Organic field-effect transistor and semiconductor device including the same |
CN101051643A (en) * | 2006-04-03 | 2007-10-10 | 精工爱普生株式会社 | Semiconductor device |
-
2009
- 2009-03-10 KR KR1020107022534A patent/KR101547588B1/en active IP Right Grant
- 2009-03-10 TW TW098107837A patent/TWI461461B/en active
- 2009-03-10 CN CN201410028650.7A patent/CN103788653A/en active Pending
- 2009-03-10 CN CN200980108394XA patent/CN101970537A/en active Pending
- 2009-03-10 JP JP2010502837A patent/JP5445788B2/en active Active
- 2009-03-10 CN CN201510964780.6A patent/CN105542164A/en active Pending
- 2009-03-10 WO PCT/JP2009/054561 patent/WO2009113549A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI453235B (en) * | 2008-10-23 | 2014-09-21 | Nissan Chemical Ind Ltd | Underlayer film for forming image |
Also Published As
Publication number | Publication date |
---|---|
KR101547588B1 (en) | 2015-08-26 |
JPWO2009113549A1 (en) | 2011-07-21 |
WO2009113549A1 (en) | 2009-09-17 |
JP5445788B2 (en) | 2014-03-19 |
TWI461461B (en) | 2014-11-21 |
CN101970537A (en) | 2011-02-09 |
KR20100125396A (en) | 2010-11-30 |
CN103788653A (en) | 2014-05-14 |
CN105542164A (en) | 2016-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI461459B (en) | Polyimide precursor and polyimide, and image-forming underlayer application solution | |
TW201002762A (en) | Underlayer film composition for forming image | |
JP5212596B2 (en) | Organic transistor | |
KR101645261B1 (en) | Composition for Forming Gate Dielectric of Thin Film Transistor | |
EP1898451B1 (en) | Method for producing an electrode patterning layer comprising polyamic acid or polyimide | |
JP5196194B2 (en) | Gate insulating film, forming agent thereof, manufacturing method, thin film transistor using the same, and manufacturing method thereof | |
US10573834B2 (en) | Coating liquid for gate insulating film, gate insulating film and organic transistor | |
JP5532259B2 (en) | Underlayer film for image formation | |
JPWO2010047346A6 (en) | Underlayer film for image formation | |
KR101187609B1 (en) | Low temperature processable and photo-crosslinkable organic gate insulator, and organic thin film transistor device using the same | |
JP5212600B2 (en) | Gate insulating film and organic transistor | |
KR20110026460A (en) | Low temperature processable and photo-crosslinkable organic gate insulator, and organic thin film transistor device using the same |