TWI448835B - 決定方法、曝光方法和儲存媒體 - Google Patents

決定方法、曝光方法和儲存媒體 Download PDF

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Publication number
TWI448835B
TWI448835B TW100130285A TW100130285A TWI448835B TW I448835 B TWI448835 B TW I448835B TW 100130285 A TW100130285 A TW 100130285A TW 100130285 A TW100130285 A TW 100130285A TW I448835 B TWI448835 B TW I448835B
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TW
Taiwan
Prior art keywords
image
pattern
mask
legend
optical system
Prior art date
Application number
TW100130285A
Other languages
English (en)
Chinese (zh)
Other versions
TW201216012A (en
Inventor
Yuichi Gyoda
Hiroyuki Ishii
Koji Mikami
Youzou Fukagawa
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW201216012A publication Critical patent/TW201216012A/zh
Application granted granted Critical
Publication of TWI448835B publication Critical patent/TWI448835B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
TW100130285A 2010-09-01 2011-08-24 決定方法、曝光方法和儲存媒體 TWI448835B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010196091A JP5513324B2 (ja) 2010-09-01 2010-09-01 決定方法、露光方法及びプログラム

Publications (2)

Publication Number Publication Date
TW201216012A TW201216012A (en) 2012-04-16
TWI448835B true TWI448835B (zh) 2014-08-11

Family

ID=45697338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100130285A TWI448835B (zh) 2010-09-01 2011-08-24 決定方法、曝光方法和儲存媒體

Country Status (4)

Country Link
US (1) US8811714B2 (cg-RX-API-DMAC7.html)
JP (1) JP5513324B2 (cg-RX-API-DMAC7.html)
KR (1) KR101419581B1 (cg-RX-API-DMAC7.html)
TW (1) TWI448835B (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
FR2985086B1 (fr) * 2011-12-27 2014-02-28 St Microelectronics Crolles 2 Procede et systeme d'elaboration d'un masque de photolithographie et d'une source lumineuse.
KR101970685B1 (ko) 2012-08-09 2019-04-19 삼성전자 주식회사 패터닝 방법, 그 패터닝 방법을 이용한 반도체 소자 제조방법, 및 반도체 소자 제조장치
KR101992516B1 (ko) * 2012-10-08 2019-06-24 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 장치의 작동 방법
JP6161276B2 (ja) * 2012-12-12 2017-07-12 キヤノン株式会社 測定装置、測定方法、及びプログラム
US8954898B2 (en) * 2013-03-15 2015-02-10 International Business Machines Corporation Source-mask optimization for a lithography process
KR102167646B1 (ko) 2014-04-01 2020-10-19 삼성전자주식회사 프레임 정보를 제공하는 전자 장치 및 방법
US10872418B2 (en) * 2016-10-11 2020-12-22 Kabushiki Kaisha Toshiba Edge detection device, an edge detection method, and an object holding device
CN119395949A (zh) * 2024-11-15 2025-02-07 深圳晶源信息技术有限公司 一种光源确定方法、设备、介质及产品

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261004A (ja) * 2001-01-29 2002-09-13 Internatl Business Mach Corp <Ibm> 照明及びレチクルの最適化により、印刷ラインの形状歪みを最小化するシステム及び方法
JP3342631B2 (ja) * 1995-06-06 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明を最適化する方法および投影結像装置
JP4378266B2 (ja) * 2003-12-04 2009-12-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明源分布の調節による可能な最大プロセス・ウィンドウを用いたマスクの投影

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US7245354B2 (en) * 2004-02-03 2007-07-17 Yuri Granik Source optimization for image fidelity and throughput
JP2009071125A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光条件を決定する方法及びプログラム
DE102008011501A1 (de) * 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
JP5153492B2 (ja) * 2008-07-11 2013-02-27 キヤノン株式会社 露光条件決定方法およびコンピュータプログラム
US8605254B2 (en) * 2009-10-26 2013-12-10 International Business Machines Corporation Constrained optimization of lithographic source intensities under contingent requirements
JP5513325B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3342631B2 (ja) * 1995-06-06 2002-11-11 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明を最適化する方法および投影結像装置
JP2002261004A (ja) * 2001-01-29 2002-09-13 Internatl Business Mach Corp <Ibm> 照明及びレチクルの最適化により、印刷ラインの形状歪みを最小化するシステム及び方法
JP4378266B2 (ja) * 2003-12-04 2009-12-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 照明源分布の調節による可能な最大プロセス・ウィンドウを用いたマスクの投影

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Matsuyama et al., "A Study of Source & Mask Optimization for ArF Scanners", Optical Microlithography XXII, Proceedings of SPIE, Volume 7274, 2009, pages 727408-1 to 727408-8. *

Also Published As

Publication number Publication date
US8811714B2 (en) 2014-08-19
JP5513324B2 (ja) 2014-06-04
KR101419581B1 (ko) 2014-07-14
KR20120024451A (ko) 2012-03-14
US20120051622A1 (en) 2012-03-01
JP2012054425A (ja) 2012-03-15
TW201216012A (en) 2012-04-16

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