TWI447270B - 用於改良銀表面與樹脂材料間之黏附力的方法 - Google Patents
用於改良銀表面與樹脂材料間之黏附力的方法 Download PDFInfo
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- TWI447270B TWI447270B TW098131233A TW98131233A TWI447270B TW I447270 B TWI447270 B TW I447270B TW 098131233 A TW098131233 A TW 098131233A TW 98131233 A TW98131233 A TW 98131233A TW I447270 B TWI447270 B TW I447270B
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- silver
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- lead frame
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Description
本發明有關一種用於改良銀表面與樹脂材料間(諸如環氧樹脂與模材料)之黏附力的方法。此種方法可用於製造電子裝置,諸如引線框與表面安裝之裝置(SMD)。
引線框係用於製造安裝在印刷電路板上之電子裝置(表面安裝之裝置(SMD)。SMD的製造中之一個步驟係將樹脂(模)材料施用於引線框頂部以供防護用,即,形成所謂封裝。引線框通常含有銅與銀表面。因此,該模係與該引線框的銀與銅表面接觸。在SMD產品使用期限期間,必須保證金屬與模之間不會發生層離,否則該SMD部件可能失效。
在該封裝的使用期限期間,周圍濕氣可能被吸收在模與引線框之界面。濕氣吸收且停留在該封裝內部造成的問題在於,當該裝置遭遇突然升高之溫度(諸如板安裝期間的焊錫溫度)時,被截留的濕氣將汽化且產生巨大內部封裝應力,此可能導致層離。該濕氣引發之層離被稱為「爆米花效應」。為了避免爆米花效應,該封裝必須在無濕氣條件下封裝或再封裝以避免焊接之前的吸收,此使得該組裝過程成本更高且品質控制益發困難。由於無鉛焊接應用中所使用的焊接溫度較高,發生爆米花效應的風險特別高,造成更多封裝失效。
為認識各種封裝類型之不同程度的爆米花龜裂傾向,IPC/JEDEC界定有引線之IC封裝之濕氣敏感度水準(MSL)的標準分級。根據此標準(J-STD-20 MSL),MSL係以數字表示,該MSL數字隨著封裝之爆米花龜裂的易損性而提高。因此,MSL1對應於不論是否曝露於濕氣均可避免爆米花龜裂的封裝,而MSL5與MSL6則為最容易發生濕氣引發破裂的裝置。目標係實現MSL1。
根據J-STD-20 MSL標準,在指定之濕氣與溫度條件下測試整體裝置一段特定時間(見表1)。
為了確保在現實生活條件下具有充分黏附力,根據IPC/JEDEC J-STD-20 MSL標準測試有引線之IC封裝。測試黏附力強度的另一實際測試係所謂撕標測試(Tab Pull Test),此測試在該產業中常用於評定合格性。亦可從簡單剝離測試得到金屬表面與模間之黏附力的強度指示。撕標測試與剝離測試二者係在開發階段與評定合格性階段用作確認金屬表面與樹脂材料間之黏附力改良的良好工具。撕標測試與剝離測試通常在試樣上進行,而非在真正封裝上進行。就在真正封裝上進行的MSL測試而言,可使用C模式掃描聲學顯微術(C-Mode Scanning Acoustic Microscopy(C-SAM))偵測銀與模間之界面處的層離。
可獲致之濕氣敏感度水準不僅取決於模與引線框表面間的黏附力,亦取決於該封裝大小與尺寸。通常由於SMD薄因而具有較低破裂強度,其更容易吸收及保留濕氣;及SMD板安裝亦使該模化合物遭遇引線所經歷的高溫之故,SMD易於發生爆米花龜裂。
目前所製造的大部份引線框之表面通常係由兩種金屬組成,即,是為該引線框基底材料的銅或銅合金,以及銀。不同引線框間之銅與銀的相對比例可改變。該基底材料影響引線框的熱安定性與機械安定性。引線框表面處的銀需要在引線框與安裝於其上的晶片之間產生導電連接。在進一步處理引線框期間,此通常係藉由熱超音波接合(Thermo Sonic Bonding(TSB))進行,該熱超音波接合包括令細薄的線與該引線框上之晶片和銀二者接觸。
熱超音波接合(其亦被稱為線接合)係表面熔接法,其中使兩個清潔的金屬表面(基材與線)接觸以在該接合線(其通常由金組成,但亦可由鋁組成)與該引線框基材上的銀之間產生安定接合。如此,該方法對於金屬表面上的性質相當敏感。
就引線框之銅與銅合金表面而言,目前在引線框製造中常見使該銅或銅表面變粗糙以改善該表面與隨後用於製造SMD之樹脂材料(模)間的黏附力。該粗糙化經常藉由化學蝕刻方法實現;但亦可藉由電化學(即,施加陽極電流至該銅材料)而實現。化學蝕刻方法其中某些亦在該銅表面上產生氧化物層,由於金屬氧化物表面通常比無氧化物的金屬表面顯示出與樹脂之較佳黏附力,故氧化物層對於黏附力具有正面影響。然而,此種氧化物層之效果當與化學粗糙化之效果相比時可能相當小。
粗糙化引線框表面上之銅或銅合金且藉此改良樹脂材料(模)對銅或銅合金之黏附力的標準方法係由Atotech所發展出來的MoldPrepTM
法(見EP 1 820 884 A1)。該MoldPrepTM
法可應用於已鍍銀之引線框。然而,該方法不會影響銀表面。因此,其對於樹脂材料與銀的黏附力沒有影響。
已發現,不管銅材料已變得多粗糙,只有銅與樹脂材料間的黏附力獲得改良。沒有任何習知粗糙化銅或銅合金表面的方法造成銀與樹脂材料間之黏附力的顯著改良。因此,銀與樹脂材料間的接點係引線框與樹脂材料間的最脆弱環節,因而妨礙SMD之MSL性質進一步改良。
有鑒於此情況,引線框與SMD之製造商試圖最小化該銀表面積且最大化銅表面的相對比例以提高系統安定性。不過,由於需要特定最小銀表面積以令晶片與引線框表面接觸,故此途徑有其限制。
最新技術
引線框產業已努力多年以求改良樹脂材料(模)與各種金屬間的黏附力,該等金屬係諸如銅、銅合金、銀、合金42與鎳/鈀/金之層的組合(如用於所謂預鍍框(PPF))。PPF方法在沉積鎳/鈀/金之前藉由粗糙化銅而獲致黏附力的邊際改良。改良樹脂材料對PPF之黏附力的另一種可能係藉由適當控制電鍍參數將鎳沉積成粗糙形式。粗糙鎳因機械性固定作用而產生對樹脂材料的經改良黏附力。不過,以該方法獲致之黏附力仍未如現今銅及其合金達成的黏附力一樣良好。因此,以該方法獲致的黏附力改良仍不足。
Cui等人(“Adhesion Enhancement of Pd Plated Leadframes”,1999 Electronic Components and Technology Conference,p. 837)揭示可藉由在含鐵之鹼性溶液中將陰極電流施加至引線框而沿著晶粒界沉積鐵。根據作者所言,在PPF表面沉積鐵導致經改良之對樹脂材料的黏附力。不過,導線可接合性同時降低。隨著愈多鐵沉積在表面,線可接合性變差。據推測,就是此因素以及鐵對空氣氧化敏感之故,Cui等人所描述的方法並未工業上使用。
美國專利5,343,073與5,449,951描述引線框,其中對樹脂材料的黏附力係藉由電解沉積鉻與鋅而改良。因該等專利中所述之方法包括使用鉻(VI),其在環境保護需求方面是不利的。由於鋅類似鐵且相反於該等專利所述,金線對鋅的可接合性差,故使用鋅亦不利。
美國專利5,300,158描述使用鉻(VI)防止腐蝕及用於改良對於由銅或銅合金所組成之基材的黏附力。
美國專利6,852,427揭示可使用含至少一種金屬(例如鋅)之溶液防止銅腐蝕,且同時獲致黏附力改良的方法。該專利主要有關避免使用鉻(VI)。
美國專利申請案US 2005/0121330 A1(其係上述美國專利6,852,427之分割申請案)亦僅有關銅表面。該專利中並未考慮銀與金線對銀表面之可接合性。
因此,本發明目的係改良樹脂材料(諸如用作電子裝置製造之模材料)對銀表面(尤其是引線框之銀表面)的黏附力,以便能製造具有良好濕氣敏感性水準之電子封裝,理想狀態係獲致濕氣敏感度水準MSL1。同時,必須可能無故障地線接合於該銀表面。又,同時所展現的經粗糙化銅或銅合金表面之良好黏附力性質不可變差。
本發明人試圖選擇性蝕刻銀以增加其粗糙度的努力並未成功。基於下列因素而放棄該途徑:首先,銀之蝕刻太不均勻以致造成小孔。其次,因所測試銀蝕刻溶液的選擇性不足之故,銅亦被不均勻蝕刻,其導致樹脂材料對銅表面之黏附力變差。
本發明人亦試圖藉由將銀沉積成粗糙形式以改良樹脂材料對銀之黏附力。不過,可獲致之粗糙度值不足以形成經改良黏附力,或該銀係沉積成粉末形式,其也不會導致經改良之黏附力。然而,粗糙銀對於接合方法可能極為關鍵。
與上述PPF法類似,本發明人亦試圖在沉積銀之前粗糙化銅,然後將銀沉積在該經粗糙化之銅上。不過,已發現即使明顯提高之粗糙度亦不會產生所希望的黏附力改良。只有當本發明人發現根據本發明之方法時才解決銀表面與樹脂材料(尤其是用作模材料者)間的不良黏附力問題。
因此,為實現上述目的,本發明提出一種用於改良銀表面與樹脂材料間之黏附力的方法,其包含以一種含有氫氧化物之溶液電解處理該銀表面的步驟,該氫氧化物係選自鹼金屬氫氧化物、鹼土金屬氫氧化物、銨之氫氧化物與其混合物,其中該銀表面為陰極。
在根據本發明之方法中,將樹脂材料最終黏附的銀表面與如前文指定之含氫氧化物的溶液接觸。亦將該溶液與至少一個陽極接觸且在作為陰極之該銀表面與至少一個陽極之間施加電壓以將電流通過該溶液。如此處理的銀表面顯示對於樹脂材料,特別是作為製造電子組件(諸如表面安裝之裝置(SMD)之模材料的經改良黏附力。
在上述方法之一特定具體實例中,本發明提出一種用於製造表面安裝之電子裝置(SMD)的方法,其包含下列步驟:(i)提供具有至少一個銀表面之引線框,(ii)以含有氫氧化物之溶液電解處理該引線框之銀表面,該氫氧化物係選自鹼金屬氫氧化物、鹼土金屬氫氧化物、銨之氫氧化物與其混合物,其中該引線框為陰極,(iii)使用樹脂材料將電子裝置與該引線框封裝在一起。該引線框亦可包含至少一個銅表面。若存在銅表面,任何銅表面將經歷與該至少一個銀表面相同之處理與條件。如本發明人所發現,此做法對於該銅表面並無可量測影響。
電解處理該銀表面的步驟通常在將任何引線接合至該銀表面之前進行。不過,原則上亦可在該接合步驟之後電解處理該銀表面。
如此,本發明亦提供一種電子裝置,其中樹脂材料係與銀接觸,該裝置係由上述方法得到。
電解處理該銀表面之步驟可分批或以連續模式進行。在分批模式中,在掛筒鍍式應用(rack and barrel type application)中一次處理至少一個工作件。在連續模式中,工作件(特別是引線框)係以捲軸式應用處理。如此,在該連續方法中,可將所製造產物條或基材材料捲軸分離成個別部份之前進行鍍處理。
處理該銀表面用之該溶液的溫度並無特別限制。通常,該溫度會從15至75℃,較佳為20至50℃,更佳為35至45℃。
該銀表面之電解處理期間並無特別限制。通常,該期間為5至300秒,較佳為25至60秒。通常,較長之該處理期間會形成該銀表面與樹脂材料間之黏附力的更大改良。不過,較長期間可能不利,當該處理是以待處理工作件係移動通過一電解槽之連續模式進行時尤其不利,且長處理期間可能因而需要過長之該槽一端至另一端的距離。因此,藉由提高陰極電流密度可獲致短處理期間。此可能需要適當提高陽極之大小以避免電壓過高。
電解處理銀表面的步驟中所施加之電流密度並無特定限制。通常,該陰極電流密度可為2至40A/dm2
,較佳為4至32A/dm2
。當該處理溶液僅含有氫氧化物(例如僅有氫氧化鈉)時,該陰極電流密度通常為8至24A/dm2
,較佳為12至16A/dm2
。當該處理溶液另外含有矽酸鹽時,該陰極電流密度通常為4至16A/dm2
,較佳為8至12A/dm2
。通常,較高電流密度造成黏附力之較大改良。原則上,電流密度僅由在陰極與陽極之間所施加的電壓限制。
電解處理銀表面的步驟中所施加之電壓並無特定限制。其尤其視陰極對陽極表面積之比、電解質之濃度與電流密度而定。通常該電壓小於7V。
電解處理該銀表面之步驟中所使用的該至少一個陽極之材料並無特定限制,惟該陽極應基本上為惰性,即該陽極應不會溶解至任何顯著程度。因此,該陽極可由不鏽鋼製成,諸如V4A或SS316/319鋼,或例如由鍍鉑之鈦製成。可藉由控制電壓,即,避免過高電壓而控制該陽極之溶解。
該陽極與該陰極之表面積比並無特定限制。通常,陽極:陰極之表面積比為至少2:1,較佳為至少4:1,更佳為至少8:1。
用以電解處理該銀表面的溶液含有選自金屬氫氧化物、鹼土金屬氫氧化物、銨之氫氧化物及其混合物之氫氧化物。較佳鹼金屬氫氧化物係氫氧化鈉(NaOH)與氫氧化鉀(KOH)。適用之銨之氫氧化物為具有通式NR4-n
Hn
OH之銨之氫氧化物,其中每一R獨立為具有1至12個,較佳為1至6個碳原子的烷基。較佳之氫氧化物係氫氧化鈉與氫氧化鉀。
該處理溶液中之氫氧化物的濃度通常為10至500g/l,較佳為100至200g/l,例如約150g/l。若該處理溶液含有下述加強傳導性或改良黏附力之鹽類中任一者,較低氫氧化物之濃度通常即已足夠。
該處理溶液可額外含有矽酸鹽,諸如偏矽酸鈉或偏矽酸鉀或偏矽酸銨。亦可使用所謂倍半矽酸鹽,諸如Na3
HSiO4
‧5H2
O或對應之鹼鹽或銨鹽。較佳之矽酸鹽係聚矽酸鹽,較佳為可溶性鹼金屬聚矽酸鹽或銨之聚矽酸鹽,其可以通式M2
O‧nSiO2
表示,其中n為約1至4,且M為鹼金屬或通式NR4-n
Hn +
之銨離子,其中每一R獨立為具有1至12個,較佳為1至6個碳原子的烷基。
已發現該處理溶液中存在此種矽酸鹽造成經處理銀表面與樹脂間之黏附力的更大改良。若使用矽酸鹽,該處理溶液中之矽酸鹽的濃度通常為1至100g/l,較佳為10至50g/l。
隨意地,該處理溶液可含有一或更多種加強傳導性之鹽類。較佳的加強傳導性之鹽類為硫酸鹽與聚磷酸鹽,較佳係具有鹼、銨或鹼土金屬陽離子,例如硫酸鈉或硫酸鉀(Na2
SO4
或K2
SO4
)或三聚磷酸鈉或三聚磷酸鉀(Na5
P3
O10
或K5
P3
O10
);亦可使用對應之銨鹽((NH4
)2
SO4
或(NH4
)5
P3
O10
)。此等強傳導性之鹽類可用以降低陰極與陽極間之電壓及提高電流密度。若使用強傳導性之鹽類,該處理溶液中之該強傳導性之鹽類的濃度通常為1至100g/l,較佳為10至50g/l。當單獨使用此等鹽類時,並未發現具有加強黏附力效果。
該處理溶液之pH>7,較佳係>10。
隨意地,該處理溶液可含有一或更多種界面活性劑。該界面活性劑可為離子性或非離子性。適用之離子性界面活性劑包括陰離子界面活性劑,諸如硫酸鹽、磺酸鹽或羧酸鹽為底質之界面活性劑(例如十二基硫酸鈉、月桂基磺酸銨與其他烷基硫酸鹽、烷基苯磺酸鹽與脂肪酸鹽,例如十二烷基苯磺酸鈉),及陽離子界面活性劑,諸如烷基三甲銨鹽(例如,鯨蠟基三甲基溴化銨)、鯨蠟基氯化吡啶與氯化芐二甲烴銨。適用之非離子界面活性劑包括烷基聚(環氧乙烷)、環氧乙烷與環氧丙烷之共聚物、脂肪醇(例如鯨蠟醇與油醇)、聚乙二醇(例如聚乙二醇10.000)與乙二醇醚(例如乙二醇一丁醚)。此等界面活性劑促進待處理之銀表面的濕潤作用。
電解處理該銀表面的步驟係在未於銀表面上沉積任何金屬的情況下進行。因此,該處理溶液基本上無鹼金屬離子或鹼土金屬離子以外之金屬離子。特別是,該處理溶液基本上無鐵、鋅與鋯離子,尤其是Fe2+
、Fe3+
、Zn2+
、Cr3+
與Cr(VI)離子。在這方面,措辭「基本上無」意指除了構成實際上無法避免的雜質者之外,該溶液不含該等指定離子。當然不排除存在矽(作為矽酸鹽)(見上文)。
根據本發明之方法可大致用以改良任何銀表面對於樹脂材料的黏附力,特別是對於作為製造電子裝置(諸如所謂表面安裝之裝置(SMD)中之模材料的樹脂材料的黏附力。本發明方法可特別應用於具有銀表面表面之引線框。根據本發明之方法可與用於粗糙化亦存在引線框中之銅或銅合金表面的習知方法結合。特別是,根據本發明方法可與Atotech所供應之MoldPrepTM
法結合,該MoldPrepTM
法係描述於EP 1 820 884 A1。在此例中,如常先進行銅粗糙化方法,然後應用根據本發明之方法處理該銀表面。
根據本發明之經處理銀表面可藉由習知方法(特別是熱超音波接合(TSB)接合於金導線。該銀表面可實質上由純銀或由具有充分高銀含量的銀合金所組成。
根據本發明之經處理銀表面顯示出與樹脂材料(特別是通常用作製造電子封裝之模材料的樹脂材料)之經改良黏附力。特別是,在本發明內容中,該樹脂材料可為環氧樹脂或環氧模製化合物,諸如市售產品Sumikon EME-G600TM
,其由75至95重量%之熔融矽石、2至8重量%之環氧樹脂、1至3重量%之環氧甲酚酚醛清漆、2至8重量%之酚樹脂與0.1至0.5重量%之碳黑組成,或模製化合物Sumikon EME 7351 TQTM
,其由約86重量%之矽石粉末、約1.0重量%之三氧化銻、約11重量%之環氧樹脂、約1.0重量%之溴化樹脂與約1.0重量%之觸媒、增塑劑、脫模劑、顏料與底劑組成。該模製化合物亦可為無溴(「環保」)模製材料,其係由約80重量%之熔融矽石、可撓性環氧樹脂與硬化劑、過渡金屬氧化物/氮阻燃劑、橡膠或熱塑性增塑劑與矽烷類組成。
實施例
茲參考下列非限制性實例舉例說明本發明。
測試方法
實施例中所使用之測試方法如下:
實驗室剝離測試
該實驗室剝離測試係在層合於環氧樹脂玻璃纖維基材之銀箔上藉由測量從該環氧樹脂層剝離該箔所需之力量而進行。更明確地說,銀箔(99.97% Ag,長度:130mm,寬度:30mm,厚度:50μm)係以有機溶劑去除油脂,然後層合於Isola Duraver DE104MLTM
環氧樹脂玻璃纖維預浸料坯(玻璃型號2125,Tg:135℃,大小:25×25cm),同時藉由在至高達175℃下使用壓製機械(由HML所製;型號:MP20-2-VK)將該環氧樹脂預浸料坯硬化,且該溫度與壓力規劃如下表所指定:
其後,使該銀/環氧樹脂層合物冷卻至室溫。然後,使用由Zwick所製造之測量裝置(型號:Z 010)在剝離角度為90°且速率為50mm/min在100mm之距離測量相對於銀箔之寬度從該環氧樹脂基材剝離銀箔所需要的力量。
撕標測試
在該撕標測試中,使用具有等邊三角形銀區域(約7mm2
)的銅引線框。將一模(Sumikon EME-G600TM
)施用於該銀表面並硬化之。然後對該模施加拉力。測量分開該模與該銀表面所需要的力量(以kg計)。
接合測試
使用下列設備、材料與參數進行該接合測試:
接合器(裝置):Delvotec 5410(半自動球式/楔式接合)
超音波頻率:60kHz
功率設定(a.u.) 球式接合:40;楔式接合:140
時間設定(a.u.) 球式接合:30;楔式接合:60
力量設定(a.u.) 20
接合線:Au HD2(Heraeus),直徑:25μm,斷裂負載:>7g
毛細管:UTS-41KJ-CM-1/16-16mm
溫度:150℃
拉力測試機:DAGE 4000;WP100匣:拉引速度:500μm/s
拉伸次數:30
處理溶液
該等實施例中所使用的處理溶液為具有表2中所指定組成的水溶液:
實施例1
銀箔係使用有機溶劑去除油脂。然後藉由在施用直流電的同時將其浸入40℃處理溶液A中60秒以對其進行根據本發明之電解黏附力改良處理。連接該銀箔作為陰極。陽極係由鋼製成。陰極處之電流密度為9A/dm2
。
然後對該銀箔進行如前文詳細說明的實驗室剝離測試。為進行比較,在僅去除油脂但未進行根據本發明之電解黏附力改良處理的銀箔上進行該測試。
實驗室剝離測試的結果係示於表3。
實施例2
藉由將標準引線框(如撕標測試中所使用者,見前文)浸入表4所詳細說明的溶液中,浸入時間與溫度如該表所指明,對其進行MoldPrep LFTM
預處理(見表4,步驟1至5)。
然後藉由在施用直流電的同時將該引線框浸入40℃處理溶液C中60秒以對其進行根據本發明之電解黏附力改良處理(表4,步驟6)。連接該引線框作為陰極。陽極係由鋼製成。陰極處之電流密度為9A/dm2
。
然後以去離子水(<2μS)沖洗該引線框(30秒,60℃)並在65℃下乾燥10分鐘(表4,步驟7與8)。
該實施例中所進行之步驟與處理條件彙總於表4。(應注意,步驟3至5係考慮到該引線框之表面上存在銅(合金)的存在下而進行;該等步驟對改良對於銀表面之黏附力並非必須,且並非根據本發明方法的基本部份)。
然後藉由射出成形施加模,且對該引線框使用各種烘烤條件。之後,對其進行前文詳細說明之撕標測試與接合測試。為做比較,亦對已經以相同方式處理的引線框進行測試,惟省略根據本發明之電解黏附力改良處理(表4,步驟6)。
撕標測試與接合測試的結果分別示於表5與6。
表6中之結果顯示根據本發明之電解黏附力改良處理對於接合強度並無顯著(即,無有害)影響。更明確地說,在接合測試中,所有接合顯示出導線或在頸部或底座處的斷裂,但無球或楔脫落(即,在線端脫離)。
實施例3
以下列修改重複實施例1:在電解黏附力改良處理步驟中,以處理溶液B替代處理溶液A;陽極係由V4A不鏽鋼製成;陰極之電流密度為16A/dm2
;處理時間為30秒。如此得到之在銀箔上的實驗室剝離測試的結果係示於表7。
實施例4
以下列修改重複實施例1:根據MoldPrep LFTM
法預處理該銀箔(表4,步驟1至5)。在電解黏附力改良處理步驟中,以處理溶液C替代處理溶液A;陽極係由不鏽鋼製成;溫度為45℃;處理時間為30秒。如此得到之在銀箔上的實驗室剝離測試的結果係示於表8。
實施例5
以下列修改重複實施例2:在電解黏附力改良處理步驟中,以處理溶液D替代處理溶液A;溫度為45℃;處理時間為35秒;陰極之電流密度為12A/dm2
。
撕標測試與接合測試的結果分別示於表9與10。
實施例6
分別研究兩個具有22個獨立表面安裝之裝置(四面扁平封裝)的引線框。該等引線框係部份鍍銀,即,其含有基底材料銅之表面積及銀所組成的表面積。測試一個施用模之前該銀表面未進行任何處理(即,僅進行加強模與銅表面間之黏附力的方法步驟1至5(見表4))的引線框。在如表4所示之方法順序中,以溶液A額外處理第二個引線框(見表2;電流密度:9A/dm2
,溫度:40℃,時間:60s)。以C模式掃描聲學顯微術(C-SAM)研究MSL水準1至3之測試(見表1)後的層離。每一引線框上的失效裝置數係彙總於表11。在使用溶液A處理銀表面積之後並未觀察到MSL水準1至3之測試失效。
實施例7
銀箔係使用有機溶劑去除油脂。然後藉由將其浸於含有如以下表12所述之化學物質的溶液而對其進行根據本發明的電解黏附力改良處理。在施加直流電的同時,浸漬時間為於45℃下為時60秒。連接該銀箔作為陰極。陽極係由鋼製成。陰極處之電流密度為16A/dm2
。
然後對該銀箔進行如前文詳細說明的實驗室剝離測試。結果示於表12。為進行比較,在僅去除油脂但未進行根據本發明之電解黏附力改良處理的銀箔上進行該測試。
Claims (14)
- 一種用於改良銀表面與樹脂材料間之黏附力的方法,其包含以一種含有氫氧化物之溶液電解處理該銀表面的步驟,該氫氧化物係選自鹼金屬氫氧化物、鹼土金屬氫氧化物、銨之氫氧化物與其混合物,其中該銀表面為陰極,以及其中該電解處理銀表面的步驟係在該銀表面上不沉積任何金屬的情況下進行。
- 一種用於製造表面安裝之電子裝置的方法,其包含依序進行之下列步驟:(i)提供具有銅與銀表面之引線框,(ii)隨意地粗糙化該Cu表面,(iii)以含有氫氧化物之溶液電解處理該引線框之銀表面,該氫氧化物係選自鹼金屬氫氧化物、鹼土金屬氫氧化物、銨之氫氧化物與其混合物,其中該引線框為陰極,以及其中該電解處理銀表面的步驟係在該銀表面上不沉積任何金屬的情況下進行,(iv)使用樹脂材料將電子裝置與該引線框封裝在一起。
- 如申請專利範圍第1或2項之方法,其中該溶液實質上無鹼金屬離子或鹼土金屬離子以外之金屬離子。
- 如申請專利範圍第1或2項之方法,其中處理該銀表面的該溶液之溫度為20至50℃。
- 如申請專利範圍第1或2項之方法,其中該電解處 理之持續期間為5至300秒。
- 如申請專利範圍第1或2項之方法,其中該電解處理銀表面之步驟中所施加的陰極電流密度為2至40A/dm2 。
- 如申請專利範圍第1或2項之方法,其中該氫氧化物為氫氧化鈉或氫氧化鉀。
- 如申請專利範圍第1或2項之方法,其中該氫氧化物於該處理溶液中之濃度為10至500g/l。
- 如申請專利範圍第1或2項之方法,其中該處理溶液另外含有矽酸鹽。
- 如申請專利範圍第9項之方法,其中該矽酸鹽於該處理溶液中之濃度為1至100g/l。
- 如申請專利範圍第1或2項之方法,其中該處理溶液含有一或更多種加強傳導性之鹽類。
- 如申請專利範圍第11項之方法,其中該加強傳導性之鹽類於該處理溶液中之濃度為1至100g/l。
- 如申請專利範圍第1或2項之方法,其中該處理溶液含有一或更多種界面活性劑。
- 一種電子裝置,其中樹脂材料係與銀接觸,該裝置係藉由如申請專利範圍第1至13項中任一項之方法製得。
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2008
- 2008-10-13 ES ES08166416T patent/ES2365186T3/es active Active
- 2008-10-13 EP EP08166416A patent/EP2175049B1/en active Active
- 2008-10-13 AT AT08166416T patent/ATE513066T1/de not_active IP Right Cessation
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2009
- 2009-09-10 JP JP2011530387A patent/JP5441276B2/ja active Active
- 2009-09-10 KR KR1020117010337A patent/KR101603619B1/ko active IP Right Grant
- 2009-09-10 US US13/123,668 patent/US8819930B2/en active Active
- 2009-09-10 WO PCT/EP2009/006580 patent/WO2010043291A1/en active Application Filing
- 2009-09-10 CN CN2009801373887A patent/CN102232127B/zh active Active
- 2009-09-16 TW TW098131233A patent/TWI447270B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USH1136H (en) * | 1991-11-29 | 1993-02-02 | The United States Of America As Represented By The Secretary Of The Air Force | Electrolytic deposition and recovery of silver |
US5459103A (en) * | 1994-04-18 | 1995-10-17 | Texas Instruments Incorporated | Method of forming lead frame with strengthened encapsulation adhesion |
CN101058893A (zh) * | 2006-04-19 | 2007-10-24 | 鸿富锦精密工业(深圳)有限公司 | 镁制品镀膜电解液 |
Also Published As
Publication number | Publication date |
---|---|
JP5441276B2 (ja) | 2014-03-12 |
EP2175049A1 (en) | 2010-04-14 |
WO2010043291A1 (en) | 2010-04-22 |
EP2175049B1 (en) | 2011-06-15 |
US20120020047A1 (en) | 2012-01-26 |
CN102232127A (zh) | 2011-11-02 |
KR101603619B1 (ko) | 2016-03-15 |
KR20110073552A (ko) | 2011-06-29 |
CN102232127B (zh) | 2013-08-14 |
ES2365186T3 (es) | 2011-09-26 |
ATE513066T1 (de) | 2011-07-15 |
US8819930B2 (en) | 2014-09-02 |
TW201022484A (en) | 2010-06-16 |
JP2012505307A (ja) | 2012-03-01 |
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