SG11201807643QA - Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same - Google Patents
Lead-frame structure, lead-frame, surface mount electronic device and methods of producing sameInfo
- Publication number
- SG11201807643QA SG11201807643QA SG11201807643QA SG11201807643QA SG11201807643QA SG 11201807643Q A SG11201807643Q A SG 11201807643QA SG 11201807643Q A SG11201807643Q A SG 11201807643QA SG 11201807643Q A SG11201807643Q A SG 11201807643QA SG 11201807643Q A SG11201807643Q A SG 11201807643QA
- Authority
- SG
- Singapore
- Prior art keywords
- lead
- frame
- international
- main sides
- erasmusstrabe
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 9
- 229910052709 silver Inorganic materials 0.000 abstract 9
- 239000004332 silver Substances 0.000 abstract 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical class [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- 241000543381 Cliftonia monophylla Species 0.000 abstract 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 abstract 1
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 1
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000010520 ghee Substances 0.000 abstract 1
- -1 hydroxide compound Chemical class 0.000 abstract 1
- 229910000000 metal hydroxide Inorganic materials 0.000 abstract 1
- 150000004692 metal hydroxides Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1689—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/46—Electroplating: Baths therefor from solutions of silver
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1614—Process or apparatus coating on selected surface areas plating on one side
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
00 300 lap 110 10 140 170 W O 20 17 / 15 35 90 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/153590 Al 14 September 2017 (14.09.2017) WIPO I PCT 111111111111110111011111111111010111110 0111101101111111111101111111111111110111111 (51) International Patent Classification: H01L 23/495 (2006.01) C23C 18/54 (2006.01) H01L 21/48 (2006.01) H01L 23/31 (2006.01) C25D 5/02 (2006.01) C25D 3/46 (2006.01) C25D 5/34 (2006.01) C23C 18/18 (2006.01) C25D 5/48 (2006.01) C23C 18/42 (2006.01) C23C 18/16 (2006.01) (21) International Application Number: PCT/EP2017/055726 (22) International Filing Date: 10 March 2017 (10.03.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16159880.0 11 March 2016 (11.03.2016) EP (71) Applicant: ATOTECH DEUTSCHLAND GMBH [DE/DE]; ErasmusstraBe 20, 10553 Berlin (DE). (72) Inventors: NEOH, Din-Ghee; c/o Atotech Deutschland GmbH, Patent Management, ErasmusstraBe 20, 10553 Ber- lin (DE). BARTHELMES, Jurgen; c/o Atotech Deutsch- land GmbH, Patent Management, ErasmusstraBe 20, 10553 Berlin (DE). (74) Agent: SCHULZ, Hendrik; c/o Atotech Deutschland GmbH, Patent Management, ErasmusstraBe 20, 10553 Ber- lin (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: LEAD-FRAME STRUCTURE, LEAD-FRAME, SURFACE MOUNT ELECTRONIC DEVICE AND METHODS OF PRODUCING SAME Fi g.1 (57) : In order to provide a more reliable and cost-efficient way of producing lead-frames or lead- frames structures which expose treated silver surfaces as well as to provide surface mount electronic devices using such lead-frames or lead-frames struc - tures, a method comprising the following method steps carried out in this order is provided: (a) providing a lead-frame body struc - ture having two main sides, said lead-frame body structure exclusively exposing a copper surface on each one of said main sides; (b) depositing a silver coating on at least one of said main sides, so that said at least one of said main sides at least partially exposes an untreated silver surface; and (c) electrolytically treating said untreated silver surface on said at least one of said main sides generated in method step (b) with a treatment solution containing at least one hydroxide compound selected from alkali metal hydroxides, al- kaline earth metal hydroxides, ammonium hydroxides and mixtures thereof, wherein the lead-frame body structure is a cathode, thereby producing a lead-frame structure which comprises at least two lead-frame entities each one having two faces and at least par - tially exposing said treated silver surface; wherein said at least one of said two faces of at least one of said lead-frame entities either exclusively exposes said treated silver surface or wherein said at least one of said two faces of said at least one of said lead-frame en- tities partially exposes said treated silver surface and partially exposes said copper surface, wherein, on each one of said two faces of each one of said lead-frame entities which partially exposes said treated silver surface, the area of said copper surface is smaller than the area of said treated silver surface.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16159880 | 2016-03-11 | ||
PCT/EP2017/055726 WO2017153590A1 (en) | 2016-03-11 | 2017-03-10 | Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201807643QA true SG11201807643QA (en) | 2018-10-30 |
Family
ID=55587055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201807643QA SG11201807643QA (en) | 2016-03-11 | 2017-03-10 | Lead-frame structure, lead-frame, surface mount electronic device and methods of producing same |
Country Status (9)
Country | Link |
---|---|
US (2) | US10832997B2 (en) |
EP (1) | EP3427297B1 (en) |
JP (1) | JP6756847B2 (en) |
KR (1) | KR102155951B1 (en) |
CN (1) | CN109075150B (en) |
MY (1) | MY197351A (en) |
SG (1) | SG11201807643QA (en) |
TW (1) | TWI660068B (en) |
WO (1) | WO2017153590A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265376A (en) | 2018-03-12 | 2019-09-20 | 意法半导体股份有限公司 | Lead frame surface finishing |
US11735512B2 (en) | 2018-12-31 | 2023-08-22 | Stmicroelectronics International N.V. | Leadframe with a metal oxide coating and method of forming the same |
EP3971958A1 (en) | 2020-09-16 | 2022-03-23 | Nexperia B.V. | A semiconductor package and a method for manufacturing of a semiconductor package |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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US4968397A (en) | 1989-11-27 | 1990-11-06 | Asher Reginald K | Non-cyanide electrode cleaning process |
US5343073A (en) | 1992-01-17 | 1994-08-30 | Olin Corporation | Lead frames having a chromium and zinc alloy coating |
US5300158A (en) | 1992-05-26 | 1994-04-05 | Olin Corporation | Protective coating having adhesion improving characteristics |
JPH09181241A (en) * | 1995-12-21 | 1997-07-11 | Hitachi Cable Ltd | Method for treating surface of lead frame |
JPH11274177A (en) * | 1998-03-25 | 1999-10-08 | Toppan Printing Co Ltd | Lead frame and its manufacture |
WO2000062341A1 (en) * | 1999-04-08 | 2000-10-19 | Shinko Electric Industries Co., Ltd. | Lead frame for semiconductor device |
US6852427B1 (en) | 2003-09-02 | 2005-02-08 | Olin Corporation | Chromium-free antitarnish adhesion promoting treatment composition |
KR101168729B1 (en) * | 2005-08-16 | 2012-07-26 | 삼성전자주식회사 | Wire and method for fabricating interconnection line and thin film transistor substrate and method for fabricating the same |
EP1820884B1 (en) | 2006-02-17 | 2009-10-07 | Atotech Deutschland Gmbh | Solution and process to treat surfaces of copper alloys in order to improve the adhesion between the metal surface and the bonded polymeric material |
US8012886B2 (en) | 2007-03-07 | 2011-09-06 | Asm Assembly Materials Ltd | Leadframe treatment for enhancing adhesion of encapsulant thereto |
CN100470785C (en) * | 2007-04-29 | 2009-03-18 | 江苏长电科技股份有限公司 | Effective packaging method for improving component-device sub-layer of semiconductor plastic package |
US8264084B2 (en) * | 2007-10-31 | 2012-09-11 | Alpha & Omega Semiconductor, Inc. | Solder-top enhanced semiconductor device for low parasitic impedance packaging |
ATE513066T1 (en) * | 2008-10-13 | 2011-07-15 | Atotech Deutschland Gmbh | METHOD FOR IMPROVING ADHESION BETWEEN SILVER SURFACES AND RESIN MATERIALS |
JP2010287741A (en) * | 2009-06-11 | 2010-12-24 | Nagasaki Univ | Lead frame and method of manufacturing the same, and semiconductor device |
WO2012060336A1 (en) * | 2010-11-02 | 2012-05-10 | 大日本印刷株式会社 | Led-element mounting lead frame, resin-attached lead frame, method of manufacturing semiconductor device, and semiconductor-element mounting lead frame |
JP5353954B2 (en) * | 2011-06-06 | 2013-11-27 | 大日本印刷株式会社 | Circuit member and semiconductor device |
JP6086532B2 (en) * | 2013-03-21 | 2017-03-01 | Dowaメタルテック株式会社 | Silver plating material |
JP6414669B2 (en) * | 2014-07-22 | 2018-10-31 | 大口マテリアル株式会社 | Lead frame and manufacturing method thereof |
US20160204003A1 (en) * | 2015-01-08 | 2016-07-14 | Yiu Fai KWAN | Method of forming asper-silver on a lead frame |
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2017
- 2017-03-10 MY MYPI2018703153A patent/MY197351A/en unknown
- 2017-03-10 KR KR1020187029121A patent/KR102155951B1/en active IP Right Grant
- 2017-03-10 US US16/083,525 patent/US10832997B2/en active Active
- 2017-03-10 JP JP2018547887A patent/JP6756847B2/en active Active
- 2017-03-10 WO PCT/EP2017/055726 patent/WO2017153590A1/en active Application Filing
- 2017-03-10 CN CN201780023724.XA patent/CN109075150B/en active Active
- 2017-03-10 EP EP17709983.5A patent/EP3427297B1/en active Active
- 2017-03-10 SG SG11201807643QA patent/SG11201807643QA/en unknown
- 2017-03-10 TW TW106107879A patent/TWI660068B/en active
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2018
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KR20180121603A (en) | 2018-11-07 |
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JP6756847B2 (en) | 2020-09-16 |
US10867895B2 (en) | 2020-12-15 |
EP3427297B1 (en) | 2020-07-15 |
US20190080930A1 (en) | 2019-03-14 |
MY197351A (en) | 2023-06-14 |
CN109075150A (en) | 2018-12-21 |
CN109075150B (en) | 2022-03-01 |
JP2019512880A (en) | 2019-05-16 |
TW201800607A (en) | 2018-01-01 |
KR102155951B1 (en) | 2020-09-15 |
US10832997B2 (en) | 2020-11-10 |
US20190172777A1 (en) | 2019-06-06 |
TWI660068B (en) | 2019-05-21 |
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