TWI446413B - 半導體晶片的製造方法 - Google Patents

半導體晶片的製造方法 Download PDF

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Publication number
TWI446413B
TWI446413B TW097135883A TW97135883A TWI446413B TW I446413 B TWI446413 B TW I446413B TW 097135883 A TW097135883 A TW 097135883A TW 97135883 A TW97135883 A TW 97135883A TW I446413 B TWI446413 B TW I446413B
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TW
Taiwan
Prior art keywords
semiconductor wafer
layer
semiconductor
bonding layer
single crystal
Prior art date
Application number
TW097135883A
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English (en)
Chinese (zh)
Other versions
TW200937503A (en
Inventor
山崎舜平
宮永昭治
稻田工
岩城裕司
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200937503A publication Critical patent/TW200937503A/zh
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Publication of TWI446413B publication Critical patent/TWI446413B/zh

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Classifications

    • H10P14/20—
    • H10P30/204—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P30/208—
    • H10P30/225—
    • H10P32/1204—
    • H10P90/1916—
    • H10W10/181—

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
TW097135883A 2007-09-21 2008-09-18 半導體晶片的製造方法 TWI446413B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007245809A JP5325404B2 (ja) 2007-09-21 2007-09-21 Ｓｏｉ基板の作製方法

Publications (2)

Publication Number Publication Date
TW200937503A TW200937503A (en) 2009-09-01
TWI446413B true TWI446413B (zh) 2014-07-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097135883A TWI446413B (zh) 2007-09-21 2008-09-18 半導體晶片的製造方法

Country Status (5)

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US (2) US7829434B2 (enExample)
JP (1) JP5325404B2 (enExample)
KR (1) KR101493301B1 (enExample)
CN (1) CN101393860B (enExample)
TW (1) TWI446413B (enExample)

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CN101657907B (zh) * 2007-04-13 2012-12-26 株式会社半导体能源研究所 光伏器件及其制造方法
US7825007B2 (en) * 2007-05-11 2010-11-02 Semiconductor Energy Laboratory Co., Ltd. Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment
US7795111B2 (en) * 2007-06-27 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device
KR101404781B1 (ko) * 2007-06-28 2014-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8501585B2 (en) * 2007-10-10 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8163628B2 (en) * 2007-11-01 2012-04-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor substrate
JP5548351B2 (ja) * 2007-11-01 2014-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101127574B1 (ko) * 2009-04-06 2012-03-23 삼성모바일디스플레이주식회사 액티브 매트릭스 기판의 제조방법 및 유기 발광 표시장치의 제조방법
WO2011058913A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5440360B2 (ja) 2010-04-26 2014-03-12 信越半導体株式会社 イオン注入状況の確認方法および半導体ウェーハの製造方法
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9024282B2 (en) 2013-03-08 2015-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for high rate hydrogen implantation and co-implantion
JP6295815B2 (ja) * 2014-05-13 2018-03-20 株式会社Sumco 貼り合わせウェーハの製造方法
US9881832B2 (en) * 2015-03-17 2018-01-30 Sunedison Semiconductor Limited (Uen201334164H) Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof
CN104979152A (zh) * 2015-07-28 2015-10-14 中国科学技术大学 一种离子注入设备
WO2017091515A1 (en) 2015-11-24 2017-06-01 University Of Washington Photosensitive medical tape
TWI730053B (zh) * 2016-02-16 2021-06-11 瑞士商Ｇ射線瑞士公司 用於電荷傳輸通過接合界面的結構、系統及方法
US9704820B1 (en) * 2016-02-26 2017-07-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor manufacturing method and associated semiconductor manufacturing system
JP6787268B2 (ja) * 2017-07-20 2020-11-18 株式会社Sumco 半導体エピタキシャルウェーハおよびその製造方法、ならびに固体撮像素子の製造方法
CN111512150B (zh) * 2018-02-09 2022-12-13 浜松光子学株式会社 试样支承体、试样支承体的制造方法和试样的离子化方法
US11878499B2 (en) 2019-06-28 2024-01-23 University Of Washington Apparatus, system, and method for activating a low-adhesion state of thermal-sensitive tape

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US4529571A (en) * 1982-10-27 1985-07-16 The United States Of America As Represented By The United States Department Of Energy Single-ring magnetic cusp low gas pressure ion source
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
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KR20080042095A (ko) * 2005-07-27 2008-05-14 실리콘 제너시스 코포레이션 제어된 클리빙 처리를 이용하여 플레이트 상에 다수의 타일영역을 제작하는 방법 및 구조
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CN101281912B (zh) * 2007-04-03 2013-01-23 株式会社半导体能源研究所 Soi衬底及其制造方法以及半导体装置

Also Published As

Publication number Publication date
JP2009076771A (ja) 2009-04-09
CN101393860A (zh) 2009-03-25
US20090081849A1 (en) 2009-03-26
US20100317161A1 (en) 2010-12-16
CN101393860B (zh) 2013-10-30
KR20090031258A (ko) 2009-03-25
KR101493301B1 (ko) 2015-02-13
US8043939B2 (en) 2011-10-25
US7829434B2 (en) 2010-11-09
JP5325404B2 (ja) 2013-10-23
TW200937503A (en) 2009-09-01

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