TWI438565B - Substrate processing method, manufacturing method of EUV mask and EUV mask - Google Patents

Substrate processing method, manufacturing method of EUV mask and EUV mask Download PDF

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Publication number
TWI438565B
TWI438565B TW100104330A TW100104330A TWI438565B TW I438565 B TWI438565 B TW I438565B TW 100104330 A TW100104330 A TW 100104330A TW 100104330 A TW100104330 A TW 100104330A TW I438565 B TWI438565 B TW I438565B
Authority
TW
Taiwan
Prior art keywords
film
substrate
photoresist
hydrophilized
euv mask
Prior art date
Application number
TW100104330A
Other languages
English (en)
Chinese (zh)
Other versions
TW201142482A (en
Inventor
櫻井秀昭
寺山正敏
Original Assignee
東芝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東芝股份有限公司 filed Critical 東芝股份有限公司
Publication of TW201142482A publication Critical patent/TW201142482A/zh
Application granted granted Critical
Publication of TWI438565B publication Critical patent/TWI438565B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H10P76/2042—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • H10P76/4085—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW100104330A 2010-02-25 2011-02-09 Substrate processing method, manufacturing method of EUV mask and EUV mask TWI438565B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010040500A JP5275275B2 (ja) 2010-02-25 2010-02-25 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201142482A TW201142482A (en) 2011-12-01
TWI438565B true TWI438565B (zh) 2014-05-21

Family

ID=44476787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100104330A TWI438565B (zh) 2010-02-25 2011-02-09 Substrate processing method, manufacturing method of EUV mask and EUV mask

Country Status (4)

Country Link
US (2) US8383298B2 (enExample)
JP (1) JP5275275B2 (enExample)
KR (1) KR101216797B1 (enExample)
TW (1) TWI438565B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5703841B2 (ja) * 2011-02-28 2015-04-22 凸版印刷株式会社 反射型マスク
JP5932498B2 (ja) * 2012-06-05 2016-06-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法およびマスク
US8953869B2 (en) * 2012-06-14 2015-02-10 Kla-Tencor Corporation Apparatus and methods for inspecting extreme ultra violet reticles
JP2016136200A (ja) * 2015-01-23 2016-07-28 株式会社東芝 半導体装置及び半導体装置の製造方法
JP6742748B2 (ja) * 2016-02-17 2020-08-19 株式会社Ｓｃｒｅｅｎホールディングス 現像ユニット、基板処理装置、現像方法および基板処理方法
WO2024085089A1 (ja) * 2022-10-21 2024-04-25 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5928840A (en) * 1995-11-10 1999-07-27 Matsushita Electric Industrial Co., Ltd. Patterning material and patterning method
JPH10258249A (ja) * 1997-03-19 1998-09-29 Dainippon Screen Mfg Co Ltd 回転式基板処理装置
JP3210893B2 (ja) * 1997-10-21 2001-09-25 東京エレクトロン株式会社 処理装置および処理方法
JP2002090981A (ja) * 2000-09-12 2002-03-27 Mitsubishi Paper Mills Ltd 露光用マスク材料の処理方法
JP3696156B2 (ja) * 2000-12-26 2005-09-14 株式会社東芝 塗布膜の加熱装置、レジスト膜の処理方法
JP4564186B2 (ja) * 2001-02-16 2010-10-20 株式会社東芝 パターン形成方法
US20050139110A1 (en) * 2002-03-22 2005-06-30 Yasuharu Suda Method for regenerating lithographic printing plate, regenerating device, printer, lithographic printing plate and its production method, and layered structure body and its production method
JP4300930B2 (ja) 2003-08-07 2009-07-22 凸版印刷株式会社 極限紫外線露光用マスク及びブランク並びにパターン転写方法
JP2005210093A (ja) * 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
JP4410076B2 (ja) * 2004-10-07 2010-02-03 東京エレクトロン株式会社 現像処理装置
JP2006324268A (ja) 2005-05-17 2006-11-30 Dainippon Printing Co Ltd Ｅｕｖ露光用マスクブランクスおよびその製造方法、ｅｕｖ露光用マスク
EP1962326B1 (en) 2005-12-12 2012-06-06 Asahi Glass Company, Limited Reflection-type mask blank for euv lithography, and substrate with electrically conductive film for the mask blank
KR101585696B1 (ko) 2006-12-15 2016-01-14 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크, 및 그 마스크 블랭크용의 기능막이 형성된 기판
TW200921297A (en) * 2007-09-25 2009-05-16 Renesas Tech Corp Method and apparatus for manufacturing semiconductor device, and resist material
JP2009099856A (ja) * 2007-10-18 2009-05-07 Toshiba Corp 基板処理方法及び基板処理装置
JP5507876B2 (ja) 2009-04-15 2014-05-28 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスクの製造方法

Also Published As

Publication number Publication date
KR20110097681A (ko) 2011-08-31
US20110207031A1 (en) 2011-08-25
KR101216797B1 (ko) 2012-12-28
JP2011176218A (ja) 2011-09-08
US8383298B2 (en) 2013-02-26
JP5275275B2 (ja) 2013-08-28
TW201142482A (en) 2011-12-01
US8908150B2 (en) 2014-12-09
US20130141708A1 (en) 2013-06-06

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