JP5275275B2 - 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法 - Google Patents

基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法 Download PDF

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JP5275275B2
JP5275275B2 JP2010040500A JP2010040500A JP5275275B2 JP 5275275 B2 JP5275275 B2 JP 5275275B2 JP 2010040500 A JP2010040500 A JP 2010040500A JP 2010040500 A JP2010040500 A JP 2010040500A JP 5275275 B2 JP5275275 B2 JP 5275275B2
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Japan
Prior art keywords
substrate
film
euv mask
mask
conductive film
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JP2010040500A
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English (en)
Japanese (ja)
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JP2011176218A5 (enExample
JP2011176218A (ja
Inventor
秀昭 桜井
正敏 寺山
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Toshiba Corp
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Toshiba Corp
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Priority to JP2010040500A priority Critical patent/JP5275275B2/ja
Priority to TW100104330A priority patent/TWI438565B/zh
Priority to KR1020110015905A priority patent/KR101216797B1/ko
Priority to US13/034,143 priority patent/US8383298B2/en
Publication of JP2011176218A publication Critical patent/JP2011176218A/ja
Publication of JP2011176218A5 publication Critical patent/JP2011176218A5/ja
Priority to US13/757,877 priority patent/US8908150B2/en
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Publication of JP5275275B2 publication Critical patent/JP5275275B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2010040500A 2010-02-25 2010-02-25 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法 Active JP5275275B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010040500A JP5275275B2 (ja) 2010-02-25 2010-02-25 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法
TW100104330A TWI438565B (zh) 2010-02-25 2011-02-09 Substrate processing method, manufacturing method of EUV mask and EUV mask
KR1020110015905A KR101216797B1 (ko) 2010-02-25 2011-02-23 기판 처리 방법, ｅｕｖ 마스크의 제조 방법 및 ｅｕｖ 마스크
US13/034,143 US8383298B2 (en) 2010-02-25 2011-02-24 Substrate processing method, manufacturing method of EUV mask, and EUV mask
US13/757,877 US8908150B2 (en) 2010-02-25 2013-02-04 Substrate processing method, manufacturing method of EUV mask, and EUV mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010040500A JP5275275B2 (ja) 2010-02-25 2010-02-25 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2011176218A JP2011176218A (ja) 2011-09-08
JP2011176218A5 JP2011176218A5 (enExample) 2012-04-26
JP5275275B2 true JP5275275B2 (ja) 2013-08-28

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JP2010040500A Active JP5275275B2 (ja) 2010-02-25 2010-02-25 基板処理方法、ｅｕｖマスクの製造方法、ｅｕｖマスクおよび半導体装置の製造方法

Country Status (4)

Country Link
US (2) US8383298B2 (enExample)
JP (1) JP5275275B2 (enExample)
KR (1) KR101216797B1 (enExample)
TW (1) TWI438565B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5703841B2 (ja) * 2011-02-28 2015-04-22 凸版印刷株式会社 反射型マスク
JP5932498B2 (ja) * 2012-06-05 2016-06-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法およびマスク
US8953869B2 (en) * 2012-06-14 2015-02-10 Kla-Tencor Corporation Apparatus and methods for inspecting extreme ultra violet reticles
JP2016136200A (ja) * 2015-01-23 2016-07-28 株式会社東芝 半導体装置及び半導体装置の製造方法
JP6742748B2 (ja) 2016-02-17 2020-08-19 株式会社Ｓｃｒｅｅｎホールディングス 現像ユニット、基板処理装置、現像方法および基板処理方法
KR20250095644A (ko) * 2022-10-21 2025-06-26 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크의 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5928840A (en) * 1995-11-10 1999-07-27 Matsushita Electric Industrial Co., Ltd. Patterning material and patterning method
JPH10258249A (ja) * 1997-03-19 1998-09-29 Dainippon Screen Mfg Co Ltd 回転式基板処理装置
JP3210893B2 (ja) * 1997-10-21 2001-09-25 東京エレクトロン株式会社 処理装置および処理方法
JP2002090981A (ja) * 2000-09-12 2002-03-27 Mitsubishi Paper Mills Ltd 露光用マスク材料の処理方法
JP3696156B2 (ja) * 2000-12-26 2005-09-14 株式会社東芝 塗布膜の加熱装置、レジスト膜の処理方法
JP4564186B2 (ja) * 2001-02-16 2010-10-20 株式会社東芝 パターン形成方法
DE60315824T2 (de) * 2002-03-22 2008-05-15 Mitsubishi Heavy Industries, Ltd. Verfahren zur regenerierung einer lithographischen druckplatte
JP4300930B2 (ja) 2003-08-07 2009-07-22 凸版印刷株式会社 極限紫外線露光用マスク及びブランク並びにパターン転写方法
JP2005210093A (ja) * 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
JP4410076B2 (ja) * 2004-10-07 2010-02-03 東京エレクトロン株式会社 現像処理装置
JP2006324268A (ja) 2005-05-17 2006-11-30 Dainippon Printing Co Ltd Ｅｕｖ露光用マスクブランクスおよびその製造方法、ｅｕｖ露光用マスク
JP5082857B2 (ja) 2005-12-12 2012-11-28 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板
WO2008072706A1 (ja) 2006-12-15 2008-06-19 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
TW200921297A (en) * 2007-09-25 2009-05-16 Renesas Tech Corp Method and apparatus for manufacturing semiconductor device, and resist material
JP2009099856A (ja) * 2007-10-18 2009-05-07 Toshiba Corp 基板処理方法及び基板処理装置
JP5507876B2 (ja) 2009-04-15 2014-05-28 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスクの製造方法

Also Published As

Publication number Publication date
KR20110097681A (ko) 2011-08-31
US20130141708A1 (en) 2013-06-06
TWI438565B (zh) 2014-05-21
US8383298B2 (en) 2013-02-26
TW201142482A (en) 2011-12-01
JP2011176218A (ja) 2011-09-08
US8908150B2 (en) 2014-12-09
US20110207031A1 (en) 2011-08-25
KR101216797B1 (ko) 2012-12-28

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