TWI434350B - 在真空中塗覆氮化矽薄膜的方法 - Google Patents

在真空中塗覆氮化矽薄膜的方法 Download PDF

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Publication number
TWI434350B
TWI434350B TW96117283A TW96117283A TWI434350B TW I434350 B TWI434350 B TW I434350B TW 96117283 A TW96117283 A TW 96117283A TW 96117283 A TW96117283 A TW 96117283A TW I434350 B TWI434350 B TW I434350B
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TW
Taiwan
Prior art keywords
substrate
film
target
ion beam
mixture
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TW96117283A
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English (en)
Chinese (zh)
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TW200845217A (en
Inventor
Vladimir Shiripov
Sergei Maryshev
Aleksander Khokhlov
Ayrat Khisamov
Mikalai Leuchuk
Original Assignee
Vladimir Shiripov
Sergei Maryshev
Aleksander Khokhlov
Ayrat Khisamov
Mikalai Leuchuk
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Application filed by Vladimir Shiripov, Sergei Maryshev, Aleksander Khokhlov, Ayrat Khisamov, Mikalai Leuchuk filed Critical Vladimir Shiripov
Publication of TW200845217A publication Critical patent/TW200845217A/zh
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Publication of TWI434350B publication Critical patent/TWI434350B/zh

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TW96117283A 2006-05-15 2007-05-15 在真空中塗覆氮化矽薄膜的方法 TWI434350B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EA200601327A EA009303B1 (ru) 2006-05-15 2006-05-15 Способ нанесения пленок нитрида кремния в вакууме (варианты)

Publications (2)

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TW200845217A TW200845217A (en) 2008-11-16
TWI434350B true TWI434350B (zh) 2014-04-11

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TW96117283A TWI434350B (zh) 2006-05-15 2007-05-15 在真空中塗覆氮化矽薄膜的方法

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JP (1) JP5079388B2 (ru)
CN (1) CN101074477B (ru)
EA (1) EA009303B1 (ru)
TW (1) TWI434350B (ru)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103147055A (zh) * 2013-03-04 2013-06-12 电子科技大学 一种直列多靶磁控溅射镀膜装置
CN104480428A (zh) * 2014-12-02 2015-04-01 中国航天科工集团第三研究院第八三五八研究所 一种离子束溅射二氧化硅光学薄膜应力的调控方法
CN106191770B (zh) * 2015-05-05 2019-03-01 中国科学院宁波材料技术与工程研究所 多孔氮化硅基封孔涂层及其制备方法与应用
CN108441838B (zh) * 2018-03-21 2020-04-17 中国兵器科学研究院宁波分院 一种中大口径光学元件表面离子束溅射沉积薄膜的方法
EP3591090A1 (de) * 2018-07-05 2020-01-08 Justus-Liebig-Universität Gießen Verfahren und vorrichtung zur sputter-deposition beschichtung von einem objekt beliebiger geometrie
CN110983279B (zh) * 2019-11-21 2022-04-01 天津津航技术物理研究所 一种高硬度低吸收氮化硅薄膜的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6462456A (en) * 1987-08-29 1989-03-08 Nissin Electric Co Ltd Formation of thin silicon nitride film
JPH0222198A (ja) * 1988-07-12 1990-01-25 Kyoto Semiconductor Kk 単結晶の製造方法
JPH06151421A (ja) * 1992-11-02 1994-05-31 Nippon Telegr & Teleph Corp <Ntt> 窒化ケイ素薄膜の形成方法
RU2052538C1 (ru) * 1993-04-08 1996-01-20 Сергей Николаевич Кучанов Способ нанесения вакуумного металлизированного покрытия на диэлектрические подложки
JP3627273B2 (ja) * 1994-02-21 2005-03-09 旭硝子株式会社 透明導電膜付き樹脂基板およびその製造方法
JPH08127869A (ja) * 1994-10-27 1996-05-21 Japan Aviation Electron Ind Ltd イオンビームスパッタリング装置
JPH11279756A (ja) * 1998-03-26 1999-10-12 Okura Ind Co Ltd 透明導電膜の形成方法
JP2000293901A (ja) * 1999-04-02 2000-10-20 Canon Inc 情報記録媒体及びその製造方法
EA003148B1 (ru) * 2000-07-05 2003-02-27 Владимир Яковлевич ШИРИПОВ Вакуумный модуль (его варианты) и система модулей для нанесения покрытий на подложку
RU2204179C1 (ru) * 2002-08-19 2003-05-10 Общество с ограниченной ответственностью "Агентство маркетинга научных разработок" Способ формирования нанорельефа на поверхности пленок
JPWO2006049022A1 (ja) * 2004-11-04 2008-05-29 旭硝子株式会社 イオンビームスパッタリング装置およびｅｕｖリソグラフィ用反射型マスクブランクの多層膜の成膜方法

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Publication number Publication date
JP2007308799A (ja) 2007-11-29
CN101074477A (zh) 2007-11-21
TW200845217A (en) 2008-11-16
EA200601327A1 (ru) 2007-12-28
JP5079388B2 (ja) 2012-11-21
CN101074477B (zh) 2014-10-01
EA009303B1 (ru) 2007-12-28

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