TWI428222B - 用以粒化塑膠材料之股線的裝置 - Google Patents

用以粒化塑膠材料之股線的裝置 Download PDF

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TWI428222B
TWI428222B TW97122845A TW97122845A TWI428222B TW I428222 B TWI428222 B TW I428222B TW 97122845 A TW97122845 A TW 97122845A TW 97122845 A TW97122845 A TW 97122845A TW I428222 B TWI428222 B TW I428222B
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Jochen Scheurich
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Rieter Automatik Gmbh
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Description

用以粒化塑膠材料之股線的裝置 發明領域
本發明係有關以一切刀圓筒來粒化塑膠材料股條的裝置，其中，當該切刀圓筒旋轉時，該切刀圓筒的個別切刀會掠過一設在一切刀支座中的反抵切刀，且在如此做時會將被供應至該反抵切刀上方的塑膠股條切成丸粒，其中有一軌條被鄰設於該反抵切刀並(相對於該切刀圓筒的旋轉方向)位於該反抵切刀之後，該軌條為一硬質材料且平行於該反抵切刀延伸，其中該軌條會捕捉該等丸粒並將之導入一排放通道中。
 發明背景
此一裝置及上述的軌條在實務上已曾被使用，該軌條可確保已被該切刀圓筒切斷的丸粒不會影響在該切刀支座上之反抵切刀下方的切刀圓筒之刃齒的速度，並因與該等丸粒的固定磨擦而造成其上的不良磨損。此係可藉該軌條來防止，因該軌條會捕捉該等丸粒。在該軌條上無可避免一定會發生的任何磨損將能被形成無效的，因為該軌條會被時常迅速地更換；而在習知裝置中，該軌條係被螺接於該切刀支座，因此，在螺絲被鬆褪且該磨損的軌條移除之後，該軌條將能被以一新的軌條來更換。有關該軌條的使用，該等螺絲已被證明是不佳的，因為它們會受到一定程度的磨損。又一事實為該軌條係附接於離該反抵切刀有一 距離處，故該切刀支座之一材料帶會受到該等丸粒的衝擊，因此會呈現一特定的摩損部位。假使該軌條被提高至該反抵切刀，則會減少並弱化該反抵切刀的支撐區域。
 發明概要
本發明的目的係為設計及列設該軌條，以使其更換方便容易，且該軌條會被列設成使該切刀支座能被保護以免磨損。本發明之該目的係可被達到因該軌條係被固定在該切刀支座中之一導槽內，其沿縱向兩側設有底切部，且面對該反抵切刀的底切部會形成一分隔膜，該分隔條的厚度會以一刃片的方式沿朝外方向逐減，而與另一底切部一起使該軌條在橫向相對於該反抵切刀呈斜傾，其中面對該反抵切刀之底切部的外緣係靠近地會聚於該反抵切刀的相對前緣，且該軌條的另一前緣會朝向該切刀圓筒突出。
因該軌條的導槽係被設計成在兩側皆具有底切部-例如呈一鳩尾導槽的形式-將會使該軌條能夠容易更換，其僅須被插入形成於該二底切部之間的通道內。該軌條及其於兩側縱向延伸的底切部可被設成使該軌條面對該反抵切刀的邊緣會實質上達到與該反抵切刀一般遠，而令該反抵切刀與軌條之間沒有空隙會產生任何特定的磨損。該軌條相對於該反抵切刀的斜傾令其可以使由該軌條反彈的丸粒被該排放通道中之一短路徑導引掉落，而不能衝擊在該裝置上的其它地方以致造成任何其它的磨損。
在一有利的實施例中，該軌條係被次分成多數縱向鄰 接的條片。此可方便該軌條的製造，並亦可使該軌條特別容易磨損的部份能比該軌條的其它部份更快地被更換。
圖式簡單說明
本發明之一說明性實施例係被呈現於圖式中，其中：第1圖係在一立體圖口出該具有反抵切刀的切刀支座及具有鳩尾槽安裝結構的軌條；第2圖係在一放大圖中示出第1圖之裝置的側視圖；第3圖示出該切刀圓筒與切刀支座和其上供入的塑膠股條之示意圖；及第4圖示出該具有反抵切刀的切刀支座和具有圓形安裝結構的軌條。
 較佳實施例之詳細說明
呈現於第1圖的切刀支座1在其頂面上設有該反抵切刀2，其係螺合於該切刀支座1且係由特別硬的材料製成俾可阻抗磨損。在該切刀支座1上的反抵切刀2下方有示出兩片式軌條3a和3b，其係嵌入該切刀支座1中之一鳩尾槽4內。該軌條3a和3b安裝於該鳩尾狀容槽內的設計可由第2圖清楚看出，並將被更詳細說明於後。
該軌條3a和3b會沿該切刀支座1延伸通過該反抵切刀2的整個長度。為了有關製造的原因，該軌條係被次分為數個別的部份，如各部份3a和3b所示，因此，若有需要，則某些部份在考量可能的磨損下得比其它部份更快地被更換。該切刀支座1係設有向下突出的螺栓5、6、7等(且若該 切刀支座1有對應的長度則會設具更多的螺栓)，該等螺栓5、6、7係被套入所述之用以粒化塑膠材料股條的裝置之一機架中，並確使該切刀支座1固裝於該機架中。
第2圖所示之該切刀支座1和反抵切刀2及軌條3a/3b的側視圖示出該軌條3a/3b的鳩尾導槽。該軌條3a/3b的導槽係在其朝下側設有底切部8，且在其朝向該反抵切刀2之側則設有底切部9，該二底切部會形成一鳩尾導槽，而該軌條3a/3b會被該鳩尾槽固持於該切刀支座1內。該底切部9係被定位及設計成會使形成於該軌條3a/3b之側邊與該反抵切刀2的下端之間的分隔條10以一刃片的方式往外逐減厚度，因此，在往外朝向該切刀圓筒(見第3圖)的一側，該反抵切刀的外緣11和該分隔條10會以一刃片的方式會聚，結果，朝向該切刀圓筒處實際上只會出現一狹窄的切刀支座1之材料條，而在被該等丸粒撞擊的部位處幾乎不會發生磨損，因為該等丸粒將會被該反抵切刀2的下部或該軌條3a/3b所捕捉。如所示，該軌條3a/3b的下前緣12會朝向該切刀圓筒突出，其所造成的結果係為在一方面，如前所述之該分隔條的厚度會呈刃片逐減的效果，且另一方面，該軌條3a/3b會突出而使任何撞擊其上的丸粒(見第3圖)會被導離該切刀支座1直接進入一排放通道中。
第3圖示出一用以粒化塑膠材料股條的裝置之相關構件，其中該切刀圓筒、反抵切刀和切刀支座亦為所述之習知技術結構中所包含的已知構件。如第3圖所示，該切刀圓筒會將已被由該股條13切斷的丸粒導至該軌條3a/3b上，該 等丸粒會以一平緩曲線撞擊在軌條3a/3b上，因此不可能造成任何特別大的摩擦。該軌條3a/3b之刻意的硬材料則會確保即使該軌條3a/3b固定地暴露於該等丸粒，亦只會磨損該軌條達一很小的程度，此將能在延長的操作過程中藉更換該軌條的個別部份而被補償，其中老舊部份會由該鳩尾導槽移除，而新的軌條部份會被插入該鳩尾導槽內。在第3圖中，存在於該反抵切刀2與軌條3a/3b的表面之間的角度α係被以虛點的弧線示出，而來表示該軌條3a/3b與反抵切刀2之間的斜傾。
第4圖示出該軌條設計之一變化例。在第4圖中，該軌條3的切刀支座1係設有凹槽20，該凹槽20的截面在本例中係對應於一圓弧段，其終止在各底切部中之開放側上，而造成向內收縮的邊緣18和19，且其亦會產生一鳩尾導槽的效果。故帶有該等內縮邊緣18和19的凹槽20將會牢固地扣持具有對應半圓形截面的軌條3，因此該軌條3僅需被滑出側邊即可以更換。有關第4圖中之軌條3的功能請參閱有關上述各圖中已被提供的解釋性論述。
1‧‧‧切刀支座
2‧‧‧反抵切刀
3，3a，3b‧‧‧軌條
4‧‧‧鳩尾槽
5，6，7‧‧‧螺栓
8，9‧‧‧底切部
10‧‧‧分隔條
11‧‧‧外緣
12‧‧‧下前緣
13‧‧‧股條
14‧‧‧丸粒
15‧‧‧切刀圓筒
18，19‧‧‧內縮緣
20‧‧‧凹槽
第1圖係在一立體圖口出該具有反抵切刀的切刀支座及具有鳩尾槽安裝結構的軌條；第2圖係在一放大圖中示出第1圖之裝置的側視圖；第3圖示出該切刀圓筒與切刀支座和其上供入的塑膠股條之示意圖；及第4圖示出該具有反抵切刀的切刀支座和具有圓形安 裝結構的軌條。
1‧‧‧切刀支座
2‧‧‧反抵切刀
3a，3b‧‧‧軌條
13‧‧‧股條
14‧‧‧丸粒
15‧‧‧切刀圓筒

Claims (2)

  1. 一種以一切刀圓筒來粒化塑膠材料股條的裝置，其中，當該切刀圓筒旋轉時，該切刀圓筒之個別的切刀會掠過一設在一切刀支座中的反抵切刀，且在如此做時會將被供至該反抵切刀上方的塑膠股條切成丸粒，其中鄰設於該反抵切刀並(相對於該切刀圓筒之旋轉方向)在該反抵切刀之後方者係為一軌條，該軌條係為一種硬材料且延伸並行於該反抵切刀，其中該軌條會捕捉該等丸粒並將該等丸粒導入一排放通道中；其特徵在於：該軌條係被固持於該切刀支座中之一導槽內，該導槽在縱向的兩側上具有底切部，其中面對該反抵切刀的底切部形成一分隔條，該分隔條的厚度在朝外方向上以一刃片的方式減小，而使該軌條與另一底切部一起在橫向上相對於該反抵切刀呈斜傾，其中面對該反抵切刀的底切部之外緣係靠近地會聚於該反抵切刀的相對前緣，且該軌條的另一前緣朝向該切刀圓筒突出。
  2. 如申請專利範圍第1項之粒化裝置，其特徵在於：該軌條係被次分成多數個縱向鄰接的條片。
TW97122845A 2007-09-17 2008-06-19 用以粒化塑膠材料之股線的裝置 TWI428222B (zh)

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010045702A1 (de) * 2010-09-16 2012-03-22 Schmidt & Heinzmann Gmbh & Co. Kg Faserschneidvorrichtung
CN112171943A (zh) * 2020-09-30 2021-01-05 安徽中鑫宏伟科技有限公司 一种尼龙隔热条母粒加工用切粒机及其使用方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB227174A (en) 1923-10-08 1925-01-08 Hugh Oswald Short Improvements in or connected with controlling the petrol supply to internal combustion engines and particularly those used on aircraft
US2739647A (en) * 1951-11-17 1956-03-27 Coste Pierre Paul Henri Machine for the production of granular material, more particularly for injection moulding machines
DE2219784C3 (de) * 1972-04-22 1975-09-04 C.F. Scheer & Cie, 7000 Stuttgart Granulator zum Granulieren von Kunststoffsträngen
DE2340682B2 (de) * 1973-08-10 1975-07-31 Automatik Apparate-Maschinenbau H. Hench Gmbh, 8754 Grossostheim Vorrichtung zum Granulieren von Kunststoffsträngen
US4025252A (en) * 1975-01-28 1977-05-24 Automatik Apparate-Maschinebau H. Hench Gmbh Granulating apparatus, especially for strands of thermoplastic materials
US4360168A (en) * 1978-12-21 1982-11-23 Conair, Inc. Rotary blade assembly for pelletizer assembly
DE3145613C2 (de) * 1981-11-17 1984-06-07 Automatik Apparate-Maschinenbau H. Hench Gmbh, 8754 Grossostheim Vorrichtung zum Zuleiten von aus Düsen schmelzflüssig austretenden Kunststoffsträngen zu einer Granuliervorrichtung
DE8600491U1 (de) * 1986-01-10 1987-06-19 AUTOMATIK Apparate-Maschinenbau GmbH, 8754 Großostheim Vorrichtung zum Granulieren von Strängen aus thermoplastischen Kunststoffen
DE3600567C1 (de) * 1986-01-10 1987-05-07 Automatik App Maschb Gmbh Vorrichtung zum Granulieren von Straengen aus thermoplastischen Kunststoffen
DE3611179C1 (de) * 1986-04-03 1987-11-26 Automatik App Maschb Gmbh Messerleiste,insbesondere zum Granulieren von Kunststoffstraengen
DE3708453A1 (de) * 1987-03-16 1988-09-29 Reinhard Michael Stranggranulator mit waehrend des betriebs wechselbarem gegenmesser
JPH0613175B2 (ja) * 1989-07-31 1994-02-23 株式会社クラレ ペレツトの製造法
US5265507A (en) * 1989-07-31 1993-11-30 Kuraray Co., Ltd. Process for producing pellets
JPH04137811U (ja) * 1991-06-19 1992-12-22 有限会社勝製作所 ストランドに於ける冷却付カツターのペレツト製造機
JPH0716948B2 (ja) * 1991-08-27 1995-03-01 株式会社タナカ ペレタイザーの固定刃取付方法
US5313864A (en) * 1992-10-26 1994-05-24 The Conair Group, Inc. Plastic strand pelletizer
DE4236451C1 (de) * 1992-10-28 1993-11-04 Scheer & Cie C F Granuliervorrichtung fuer strangmaterialien
WO1994020275A1 (en) * 1993-03-02 1994-09-15 Kabushiki Kaisha Hoshi Plastic Method of and machine for cutting strand, and method of operating the machine
DE4328778C2 (de) * 1993-08-26 1996-01-25 Rieter Automatik Gmbh Schneidleiste mit einer Schneidschicht aus hochverschleißfestem Material
DE4414754A1 (de) * 1994-04-27 1995-11-02 Scheer & Cie C F Vorrichtung zum Abkühlen und Granulieren von Kunststoff-Strängen
US5545025A (en) * 1994-10-03 1996-08-13 Katsu Manufacturing Co., Ltd. Cooled pellet making machine
DE4439774B4 (de) * 1994-11-07 2004-02-26 C. F. Scheer & Cie Gmbh & Co Vorrichtung zum Granulieren von Kunststoff-Strängen
KR100292163B1 (ko) * 1999-05-01 2001-06-01 윤영술 수지 압출 커팅장치
DE19933497A1 (de) * 1999-07-16 2001-01-18 Rieter Automatik Gmbh Vorrichtung zur Schneidspalteinstellung und Verfahren
US20040025658A1 (en) * 1999-12-10 2004-02-12 Fisher George F. Polymer cutting apparatus and method
DE10103827B4 (de) * 2001-01-29 2005-12-29 Rieter Automatik Gmbh Messeranordnung für einen Granulator zum Granulieren von Kunststoffsträngen

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