TWI424500B - 生產半導體結構之方法 - Google Patents
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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Description
本發明係關於一種生產半導體結構之方法，特別係關於一種生產用於光電子學之半導體結構之方法。
由於缺乏大面積之單晶基材，現今由具有寬能帶隙之半導體材料(或寬能帶隙半導體)，例如由GaN、AlGaN或InGaN所製得之高能或光電元件，通常是在合適的異質基材上，例如單晶藍寶石或碳化矽上透過異質磊晶而產生的。
然而，這樣的異質基材可能具有對生產於其上之元件功能不利的特性，C.A.Tran等人所著的晶體生長期刊298(2007)722中公開了這些問題中之一部分。與其他材料相比，藍寶石具有相對較低的導熱率，所造成的影響是，在其上所生產的高能或光電元件之熱損失無法好好的消散，這不利地影響元件的功能。另外亦已知，LED結構(通常一開始生產於藍寶石上，但後來轉移至金屬合金基材上)在效率方面具有更加有利的特性。
使用碳化矽(SiC)作為基材，由於其高導熱率故可解決熱損失的問題。然而，只有少數方法能夠以有效成本且在相當大的基材上生產SiC。可得之大塊SiC基材的直徑，至多僅為100毫米。
US6328796公開另外一種方法，在該方法中，3C-SiC層是透過碳化作為施體晶圓之矽晶圓表面，接下來將矽施體晶圓之SiC層結合到由多晶SiC製得之載體晶圓上，然後將矽施體晶圓之其餘部分除去以暴露SiC層而產生的。相對於矽，使用多晶SiC作為基材具有GaN和SiC彼此間的熱膨脹係數是相當類似的優點。這對於進一步之熱處理步驟是有利的。
WO03/034484揭露另一種方法，於該方法中，透過離子束合成(IBS)能夠在矽基材上產生3C多型之單晶矽碳層(在矽上的IBS 3C-SiC)。在此方法中，SiC層是透過將碳離子注入到矽基材中，熱處理以及除去矽基材中被離子注入所破壞的部分而產生的。
可以通過化學一機械拋光，將以此方式暴露之SiC層表面拋光至低於0.5奈米的粗糙度，參見EP 1727190A1，以使隨後能夠進行GaN磊晶生長。
WO98/14986公開一種方法，在該方法中透過將兩種材料層的界面暴露於電磁輻射下，從而使這些材料層分離。該分離是基於接近於界面之該二材料層之一的熱分解而達成的。在實際操作中，此方法可用於在藍寶石上生產由GaN或InGaN製得的光電元件，並且隨後透過接近藍寶石和GaN或InGaN間之界面的GaN或InGaN的熱分解而使藍寶石層分離。
此雷射剝落方法的缺點是，會受限於在電磁輻射效應下或者熱作用下分解的材料體系。此技術性複雜的方法進一步要求使用強雷射，該強雷射之波長具有超出所使用之寬能帶隙半導體的能帶隙能量。
基於上述問題，本發明之目的係提供一種用於光電子的高品質磊晶層，其可避免現有技術中已知方法之缺點。
本發明之目的係透過一種生產半導體結構之方法而達成的，該方法包含在一第一矽基材上提供一透過將碳注入矽中所產生之含有單晶3C-SiC層的3C-SiC半導體層結構，以及將一適於產生光電元件之氮化物化合物半導體的磊晶層施用於該3C-SiC半導體層結構上，其中透過將一氮化物層結合到一第二基材表面上而將該氮化物化合物半導體之磊晶層轉移到該第二基材的表面上，並且以機械或化學手段除去該3C-SiC半導體層結構中含有矽和SiC之層，該第二基材為一具有反射率高於或等於80%之高反射率的金屬合金或者一實質上透明之基材。
本案發明人已發現，在例如用GaN磊晶生長之SiC結構的情況下，矽或多SiC基材亦具有不利的特性，這是因為即使在這種於GaN層中製造發光二極體(LED)的情況下，所發射輻射的一部分會被基材吸收，從而降低了效率。
在可用以生產碳化矽層的各種方法中，使用離子束合成的原因是因為在3C-SiC上所生成之磊晶層具有特別好的特性且該生產相對來說是有利的。例如，IBS SiC不具有在光電子學中被視為特別危險的微管，尤其是它們會導致LED的完全失效。此外，在這種情況下所用之基材，例如矽晶圓，直徑可達大於100毫米，且目前可高達300毫米。現今正在開發直徑為450毫米之矽晶圓。
與透過其他方法所生產之結構相比以及與其他多型例如4H和6H之SiC相比，IBS 3C-SiC亦具有僅透過CMP拋光便足以變平整之優點，從而能夠為後續之磊晶步驟作準備。
因此，3C-SiC基材較佳係透過以下過程而產生的：將碳離子注入矽基材中，熱處理矽基材以便在矽晶圓之特定深度處形成一埋入式3C-SiC單晶層，隨後除去矽基材之上層直到暴露出3C-SiC層，且接下來化學一機械拋光經暴露之3C-SiC層之表面。
術語矽晶圓係意指包括含有矽且適於透過注入碳來生產埋入式碳化矽層之所有晶圓。
已知具有(100)、(110)或者(111)晶體取向之矽晶圓以及由FZ(float zone，浮區)或CZ(Czochralski，柴式)法生長之晶體所產生的矽晶圓係適用於本發明。
所用之矽晶圓較佳係具有50毫米、100毫米、150毫米、200毫米、300毫米或450毫米之直徑。
透過在矽晶圓中注入碳離子(該注入較佳係以與矽晶圓表面之法線呈0至20°之角度來進行的)，以及接下來的熱處理(該熱處理較佳係在1050至1400℃的溫度下持續2至20小時而進行的)，可於矽晶圓中形成一埋入式單晶3C-SiC層且在此碳化矽層的上面和下面形成非晶體(noncrystalline)過渡區域。該等過渡區域含有各種多型SiC沉澱物、無定形多晶SiC(amorphous polycrystalline SiC)和矽。上部過渡區域進一步包含複數個因注入而誘發之缺陷。
僅進行一個注入步驟。特定而言，相對於WO03/034484，不再為了產生破壞層而提供第二離子注入，例如氦離子注入。
碳離子的注入較佳係以淺角度進行以抑制晶格通道效應。因此，尤其較佳係以與矽晶圓表面之法線呈1至10°之角度注入離子。
接下來除去上部矽層和位於單晶3C-SiC層上面之非晶體過渡區，此較佳係透過合適的化學蝕刻步驟(透過氣相蝕刻或反應性離子蝕刻)、透過熱氧化且隨後蝕刻或者透過機械或化學-機械除去步驟(例如研磨、磨光或拋光)而進行的。
從而暴露出埋入式單晶3C-SiC層。
然後較佳用含有膠體矽酸鹽(二氧化矽)的漿料對3C-SiC層進行化學-機械拋光。毋須在CMP拋光之前對經暴露之3C-SiC層進行預處理。尤其，並未提供機械預拋光和熱氧化以及CMP拋光且其亦非較佳者。
拋光時間較佳係少於30分鐘。
少於15分鐘的拋光時間係尤佳的。
少於5分鐘的拋光時間係尤其更佳的。
CMP拋光較佳係以旋轉速度為10至100/分之拋光板來進行。
CMP拋光較佳係以大於或等於0.05巴且少於或等於1.0巴，尤佳為0.05至0.4巴，尤其更佳為0.05至0.2巴之拋光壓力來進行。
所使用之漿料的pH可透過例如向漿料中加入氫氧化鈉(NaOH)來調節，且pH較佳為8至11。
CMP拋光較佳係於20至60℃，尤佳為20至40℃，且尤其更佳為室溫之拋光溫度下進行。
較佳係透過CMP拋光將經暴露之碳化矽表面弄平整到少於或等於0.5奈米RMS之粗糙度，例如0.05至0.5奈米RMS之粗糙度。
可以達到如同0.1奈米RMS一樣小之低粗糙度值。
隨後將氮化物化合物半導體之磊晶層沉積於3C-SiC層表面上。
該磊晶層較佳係由選自氮化鋁、氮化鎵、氮化銦、氮化鎵鋁和氮化鎵銦中之氮化物化合物半導體所構成的，或者由包含一或多個氮化物化合物半導體之層結構所構成的。
使用氧化鋅同樣是較佳的。然而，此材料較為昂貴。
此較佳形成一包括一含有氮化物化合物半導體之磊晶層、一單晶3C-SiC層、一非晶體過渡區域和矽晶圓之剩餘矽殘留物的層結構。
然後將該磊晶層，由例如氮化物化合物半導體所構成，轉移到一第二基材上。
該第二基材係用以避免可能發生之吸收損失，並且於整體上可確保比傳統藍寶石或SiC基材上之GaN LEDs具有較高的光輸出。
第二基材較佳係金屬且具有80%或更高的反射率，尤佳為90%或更高的反射率。
然而，穿透係數為50%或更高，尤佳為80%或更高，更佳為90%或更高之透明或半透明基材亦是合適的。
第二基材較佳為一具有高導熱性的金屬合金。
尤佳係使用由銅合金所製得之基材。
Ag、Al和Au(銀、鋁和金)同樣是合適的。
使用含有透明或半透明材料之基材亦是合適的。
此可為，例如，玻璃基材。
可於玻璃基材上具有一透明的氧化物層。銦錫氧化物是尤其較佳的。
導電且係由對在氮化物層上之LED晶片所放出的電磁輻射具有高穿透係數之材料所組成的基材或層是尤其較佳的。銦錫氧化物(ITO)或者氧化鋅是尤其適合的。
透明的塑膠基材或者甚至是透明具結構之基材同樣是較佳的。
磊晶層之轉移較佳係透過將具有磊晶生長表面之整個磊晶生長的3C-SiC層結構結合到第二基材上，接下來除去3C-SiC層結構中含有矽或碳化矽的所有層，以於第二基材上僅保留先前磊晶沉積之層(氮化物)。
該等層之除去係透過機械方法例如研磨、磨光或拋光或者透過濕式和乾式化學蝕刻方法，例如用TMAH(氫氧化四甲銨)來進行。
尤其較佳在磊晶層被轉移到第二基材上之前，含有矽或碳化矽之層已經被除去，在這種情況下，機械、化學或機械和化學方法之組合都是適合的。
然而，在此情況下，載體晶圓或薄膜(例如「碳膜」)會被預先黏結到該層結構之磊晶層上。例如蠟或樹脂(緊固介質)係適用於緊固。此應為後來能輕易地溶解於溶劑(例如丙酮)中的材料。
尤其較佳係首先將一金屬材料之導電反射層施用於GaN層上。例如，Ag、Al或Au係適用於此。此層可例如為經氣相沉積的。接著將一碳膜施用於此層上。為進一步穩定並且為了易於處理，較佳係進一步緊固一載體晶圓。
在結合過程中，載體晶圓有助於磊晶層的處理。
在已經施用載體晶圓並將磊晶生長之3C-SiC層結構中含有矽和碳化矽的層除去以後，將磊晶層結合到第二基材上。
該結合本身是透過半導體工業中長久已知的任何結合方法來進行。
此等主要涉及使兩個表面接觸，此係透過黏合、親水/疏水結合或者活化欲被結合的兩個表面中之至少一者而進行。
Q.Y. Tong和Goesele在「半導體晶圓結合」(科學與科技)，Wiley Interscience Publications，中詳細地描述了各種方法。
接著溶解緊固介質並將載體晶圓從結合層上除去。
此留下先前磊晶沉積到3C-SiC上且現在與第二基材相連之氮化物層。
本發明之主要優點係使用離子束合成，以及因此而產生的3C-SiC層，可為氮化物化合物半導體接下來的沉積提供優異之基材，使其可透過簡單的結合步驟和簡單的步驟(例如蝕刻或研磨)而將高品質層(例如第III族氮化物)轉移到另一基材上，第二基材較佳係經選用以使產生於第III族氮化物上之元件(LEDs)可表現出更好的性能/能量預算(energy budget)。
Claims (11)
- 一種生產半導體結構之方法，其包含在一第一矽基材上提供一透過將碳注入矽中所產生之含有單晶3C-SiC層的3C-SiC半導體層結構，以及將一適於產生光電元件之氮化鎵化合物半導體的磊晶層施用於該3C-SiC半導體層結構上，其中首先將一金屬材料之導電反射層施用於該氮化鎵化合物半導體的磊晶層上，並在以機械或化學手段除去該3C-SiC半導體層結構中含有矽和SiC之層後，透過將該氮化鎵層結合到一第二基材的表面上並且以機械或化學手段除去該3C-SiC半導體層結構中含有矽和SiC之層，而將該氮化鎵化合物半導體之磊晶層轉移到該第二基材上，該第二基材為一具有反射率高於或等於80%之高反射率的金屬合金或者一透明之基材。
- 如請求項1所述之方法，其中該矽基材係一浮區生長(float zone-grown)之矽材料的晶圓。
- 如請求項1所述之方法，其中該矽基材係一柴式(Czochralski)生長之矽材料的晶圓。
- 如請求項1至3中任一項所述之方法，其中該單晶3C-SiC層係透過以下過程而生產的：將碳離子注入該矽基材內至一特定深度後熱處理該矽基材，以便在該矽晶圓之特定深度處形成一埋入式3C-SiC單晶層，隨後除去位於該埋入式3C-SiC單晶層上之層直到暴露出該單晶3C-SiC層，且接下來化學-機械拋光該單晶3C-SiC層之經暴露表面。
- 如請求項4所述之方法，其中透過拋光以將該經暴露之單晶3C-SiC層弄平整到一0.05至0.5奈米RMS的表面粗糙度。
- 如請求項1至3中任一項所述之方法，其中該第二基材係由一金屬或一金屬合金所構成。
- 如請求項6所述之方法，其中該第二基材係由一銅合金所構成。
- 如請求項1至3中任一項所述之方法，其中該第二基材係一玻璃基材。
- 如請求項1至3中任一項所述之方法，其中在除去該3C-SiC半導體層結構之含有矽和碳化矽的層之前，將一載體晶圓或一薄膜黏合到該3C-SiC半導體層結構之磊晶層上，所使用於黏合的材料係於將該磊晶層結合到該第二基材上之後可輕易溶解的材料，以便從該磊晶層上除去該載體晶圓或該薄膜。
- 如請求項9所述之方法，其中該3C-SiC半導體層結構之含有矽和碳化矽層的除去，係透過機械方法或者透過濕式和乾式化學蝕刻方法或者透過機械和化學除去之組合而進行的。
- 如請求項10所述之方法，其中該機械方法係研磨、磨光或拋光。
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| US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
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| DE102019203696B4 (de) | 2019-03-19 | 2022-02-24 | Albert-Ludwigs-Universität Freiburg | Transparente Mehrschichtanordnung und Herstellungsverfahren |
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