TWI419206B - The opening method and the memory medium of the container - Google Patents
The opening method and the memory medium of the container Download PDFInfo
- Publication number
- TWI419206B TWI419206B TW097106354A TW97106354A TWI419206B TW I419206 B TWI419206 B TW I419206B TW 097106354 A TW097106354 A TW 097106354A TW 97106354 A TW97106354 A TW 97106354A TW I419206 B TWI419206 B TW I419206B
- Authority
- TW
- Taiwan
- Prior art keywords
- atmosphere
- processing container
- gas
- processing
- opening
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 69
- 238000012545 processing Methods 0.000 claims description 126
- 239000007789 gas Substances 0.000 claims description 107
- 230000008569 process Effects 0.000 claims description 29
- 238000011282 treatment Methods 0.000 claims description 18
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 7
- 239000007795 chemical reaction product Substances 0.000 claims description 6
- 208000037998 chronic venous disease Diseases 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 description 38
- 235000012431 wafers Nutrition 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000006227 byproduct Substances 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910020323 ClF3 Inorganic materials 0.000 description 4
- 101100441092 Danio rerio crlf3 gene Proteins 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- 239000002341 toxic gas Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004469 SiHx Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007043603A JP5219382B2 (ja) | 2007-02-23 | 2007-02-23 | 処理容器の大気開放方法および記憶媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200842949A TW200842949A (en) | 2008-11-01 |
| TWI419206B true TWI419206B (zh) | 2013-12-11 |
Family
ID=39784949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097106354A TWI419206B (zh) | 2007-02-23 | 2008-02-22 | The opening method and the memory medium of the container |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5219382B2 (ko) |
| KR (1) | KR100980533B1 (ko) |
| CN (1) | CN101250692B (ko) |
| TW (1) | TWI419206B (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5570468B2 (ja) * | 2011-04-14 | 2014-08-13 | パナソニック株式会社 | プラズマ処理装置及び残留ガスの排気方法 |
| JP6749090B2 (ja) * | 2015-11-12 | 2020-09-02 | 東京エレクトロン株式会社 | ハロゲン系ガスを用いる処理装置における処理方法 |
| CN109187902B (zh) * | 2018-09-19 | 2021-06-15 | 衡阳师范学院 | 一种间歇式连续采样水氡测量装置及方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794488A (ja) * | 1993-09-20 | 1995-04-07 | Tokyo Electron Ltd | 真空処理装置集合体のクリーニング方法 |
| JPH07283152A (ja) * | 1994-02-21 | 1995-10-27 | Matsushita Electric Ind Co Ltd | 半導体製造装置、ガス供給装置及び排ガス処理装置並びに空圧機器の大気開放方法 |
| JP2004111811A (ja) * | 2002-09-20 | 2004-04-08 | Seiko Epson Corp | ドライエッチング装置、ドライエッチング装置のクリーニング方法、電気光学装置の製造装置及び電気光学装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108595A (ja) * | 2004-10-08 | 2006-04-20 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
-
2007
- 2007-02-23 JP JP2007043603A patent/JP5219382B2/ja active Active
-
2008
- 2008-02-21 KR KR1020080015698A patent/KR100980533B1/ko active IP Right Grant
- 2008-02-22 TW TW097106354A patent/TWI419206B/zh not_active IP Right Cessation
- 2008-02-25 CN CN200810081713XA patent/CN101250692B/zh not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794488A (ja) * | 1993-09-20 | 1995-04-07 | Tokyo Electron Ltd | 真空処理装置集合体のクリーニング方法 |
| JPH07283152A (ja) * | 1994-02-21 | 1995-10-27 | Matsushita Electric Ind Co Ltd | 半導体製造装置、ガス供給装置及び排ガス処理装置並びに空圧機器の大気開放方法 |
| JP2004111811A (ja) * | 2002-09-20 | 2004-04-08 | Seiko Epson Corp | ドライエッチング装置、ドライエッチング装置のクリーニング方法、電気光学装置の製造装置及び電気光学装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101250692B (zh) | 2010-06-02 |
| KR20080078570A (ko) | 2008-08-27 |
| TW200842949A (en) | 2008-11-01 |
| CN101250692A (zh) | 2008-08-27 |
| KR100980533B1 (ko) | 2010-09-06 |
| JP5219382B2 (ja) | 2013-06-26 |
| JP2008208390A (ja) | 2008-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |