TWI418618B - 用於具有金屬離子氧化劑之化學機械拋光組成物中的二羥基烯醇類化合物 - Google Patents

用於具有金屬離子氧化劑之化學機械拋光組成物中的二羥基烯醇類化合物 Download PDF

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Publication number
TWI418618B
TWI418618B TW095110565A TW95110565A TWI418618B TW I418618 B TWI418618 B TW I418618B TW 095110565 A TW095110565 A TW 095110565A TW 95110565 A TW95110565 A TW 95110565A TW I418618 B TWI418618 B TW I418618B
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TW
Taiwan
Prior art keywords
acid
ppm
polishing
dihydroxy
iron
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TW095110565A
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English (en)
Chinese (zh)
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TW200708603A (en
Inventor
Daniel H Castillo
Steven Masami Aragaki
Robin E Richards
Junaid A Siddiqui
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Air Prod & Chem
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Publication of TW200708603A publication Critical patent/TW200708603A/zh
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Publication of TWI418618B publication Critical patent/TWI418618B/zh

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
TW095110565A 2005-03-25 2006-03-27 用於具有金屬離子氧化劑之化學機械拋光組成物中的二羥基烯醇類化合物 TWI418618B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66493005P 2005-03-25 2005-03-25
US67467805P 2005-04-26 2005-04-26

Publications (2)

Publication Number Publication Date
TW200708603A TW200708603A (en) 2007-03-01
TWI418618B true TWI418618B (zh) 2013-12-11

Family

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Family Applications (1)

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TW095110565A TWI418618B (zh) 2005-03-25 2006-03-27 用於具有金屬離子氧化劑之化學機械拋光組成物中的二羥基烯醇類化合物

Country Status (7)

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US (2) US7476620B2 (US08114775-20120214-C00004.png)
EP (1) EP1871855B1 (US08114775-20120214-C00004.png)
JP (1) JP2008536302A (US08114775-20120214-C00004.png)
CN (1) CN101180379B (US08114775-20120214-C00004.png)
DE (1) DE602006013110D1 (US08114775-20120214-C00004.png)
TW (1) TWI418618B (US08114775-20120214-C00004.png)
WO (1) WO2006105020A1 (US08114775-20120214-C00004.png)

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DE602006013110D1 (de) 2010-05-06
JP2008536302A (ja) 2008-09-04
CN101180379B (zh) 2013-07-24
CN101180379A (zh) 2008-05-14
EP1871855A1 (en) 2008-01-02
WO2006105020A1 (en) 2006-10-05
US20090308836A1 (en) 2009-12-17
US8114775B2 (en) 2012-02-14
EP1871855B1 (en) 2010-03-24
US20060270235A1 (en) 2006-11-30
TW200708603A (en) 2007-03-01
US7476620B2 (en) 2009-01-13

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