TWI412083B - 矽基板及其製造方法 - Google Patents

矽基板及其製造方法 Download PDF

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Publication number
TWI412083B
TWI412083B TW098106829A TW98106829A TWI412083B TW I412083 B TWI412083 B TW I412083B TW 098106829 A TW098106829 A TW 098106829A TW 98106829 A TW98106829 A TW 98106829A TW I412083 B TWI412083 B TW I412083B
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TW
Taiwan
Prior art keywords
project
substrate
condition
stretching
single crystal
Prior art date
Application number
TW098106829A
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English (en)
Chinese (zh)
Other versions
TW201001554A (en
Inventor
栗田一成
表秀一
Original Assignee
勝高股份有限公司
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Application filed by 勝高股份有限公司 filed Critical 勝高股份有限公司
Publication of TW201001554A publication Critical patent/TW201001554A/zh
Application granted granted Critical
Publication of TWI412083B publication Critical patent/TWI412083B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW098106829A 2008-03-05 2009-03-03 矽基板及其製造方法 TWI412083B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008054842A JP5343371B2 (ja) 2008-03-05 2008-03-05 シリコン基板とその製造方法

Publications (2)

Publication Number Publication Date
TW201001554A TW201001554A (en) 2010-01-01
TWI412083B true TWI412083B (zh) 2013-10-11

Family

ID=40637142

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098106829A TWI412083B (zh) 2008-03-05 2009-03-03 矽基板及其製造方法

Country Status (5)

Country Link
US (1) US8864907B2 (https=)
EP (1) EP2099073B1 (https=)
JP (1) JP5343371B2 (https=)
KR (1) KR101208651B1 (https=)
TW (1) TWI412083B (https=)

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* Cited by examiner, † Cited by third party
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JP2010010615A (ja) * 2008-06-30 2010-01-14 Sumco Corp 固体撮像素子用シリコン基板およびその製造方法
KR101464566B1 (ko) * 2013-02-21 2014-11-24 주식회사 엘지실트론 실리콘 웨이퍼
JP6302216B2 (ja) * 2013-11-08 2018-03-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11111602B2 (en) 2014-07-31 2021-09-07 Globalwafers Co., Ltd. Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
JP6531729B2 (ja) * 2016-07-19 2019-06-19 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
JP6579086B2 (ja) * 2016-11-15 2019-09-25 信越半導体株式会社 デバイス形成方法
US10522367B2 (en) * 2017-03-06 2019-12-31 Qualcomm Incorporated Gettering layer formation and substrate
JP6702268B2 (ja) * 2017-06-15 2020-05-27 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP7415889B2 (ja) * 2020-11-17 2024-01-17 株式会社Sumco Ｘ線センサ向けエピタキシャルウェーハおよびｘ線センサ
JP7729256B2 (ja) * 2022-05-11 2025-08-26 株式会社Sumco エピタキシャルシリコンウェーハ
JP2025030474A (ja) * 2023-08-23 2025-03-07 信越半導体株式会社 エピタキシャルウェーハ及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261860B1 (en) * 1998-04-01 2001-07-17 Nec Corporation Method of fabricating solid-state image sensor
WO2006003812A1 (ja) * 2004-06-30 2006-01-12 Sumitomo Mitsubishi Silicon Corporation シリコンウェーハの製造方法及びこの方法により製造されたシリコンウェーハ
TW200633021A (en) * 2005-02-04 2006-09-16 Asm Inc Methods of making substitutionally carbon-doped crystalline si-containing materials by chemical vapor deposition
TWI270959B (en) * 2004-07-20 2007-01-11 Sumitomo Mitsubishi Silicon Production method for SIMOX substrate

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JP3384506B2 (ja) * 1993-03-30 2003-03-10 ソニー株式会社 半導体基板の製造方法
JP4613886B2 (ja) * 1993-03-30 2011-01-19 ソニー株式会社 固体撮像素子の製造方法、及び半導体基板の製造方法
JP2874834B2 (ja) * 1994-07-29 1999-03-24 三菱マテリアル株式会社 シリコンウェーハのイントリンシックゲッタリング処理法
JPH08104592A (ja) * 1994-08-09 1996-04-23 Sony Corp 半導体装置用半導体基板と半導体装置との製造方法
JP3533783B2 (ja) * 1995-10-18 2004-05-31 ソニー株式会社 半導体基板および半導体装置の各製造方法
JP3324469B2 (ja) * 1997-09-26 2002-09-17 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JPH11103042A (ja) * 1997-09-26 1999-04-13 Sony Corp 固体撮像装置用半導体基板と固体撮像装置の製造方法
JP3279527B2 (ja) * 1998-08-24 2002-04-30 住友金属工業株式会社 半導体シリコン基板におけるｉｇ能の評価方法、及び半導体シリコン基板の製造方法
JP2002353434A (ja) * 2001-05-22 2002-12-06 Sony Corp 固体撮像装置の製造方法
JP3973083B2 (ja) * 2002-02-13 2007-09-05 シャープ株式会社 固体撮像装置、その画素不良変換方法および傷補正方法
JP2003318181A (ja) * 2002-04-25 2003-11-07 Sumitomo Mitsubishi Silicon Corp 半導体シリコン基板におけるｉｇ能の評価方法
JP2006073580A (ja) * 2004-08-31 2006-03-16 Sumco Corp シリコンエピタキシャルウェーハ及びその製造方法
JP2006261632A (ja) * 2005-02-18 2006-09-28 Sumco Corp シリコンウェーハの熱処理方法
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Sumco シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
JP4770276B2 (ja) * 2005-06-01 2011-09-14 船井電機株式会社 固体撮像装置および固体撮像素子
JP2007273959A (ja) * 2006-03-06 2007-10-18 Matsushita Electric Ind Co Ltd 光検出素子及びその製造方法
JP2008054842A (ja) 2006-08-30 2008-03-13 J O Phama Co Ltd クリップ
CN101351890A (zh) 2006-09-07 2009-01-21 胜高股份有限公司 固态图像传感装置的半导体基板以及固态图像传感装置和其制造方法
JP5568837B2 (ja) 2008-02-29 2014-08-13 株式会社Ｓｕｍｃｏ シリコン基板の製造方法

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US6261860B1 (en) * 1998-04-01 2001-07-17 Nec Corporation Method of fabricating solid-state image sensor
WO2006003812A1 (ja) * 2004-06-30 2006-01-12 Sumitomo Mitsubishi Silicon Corporation シリコンウェーハの製造方法及びこの方法により製造されたシリコンウェーハ
TWI270959B (en) * 2004-07-20 2007-01-11 Sumitomo Mitsubishi Silicon Production method for SIMOX substrate
TW200633021A (en) * 2005-02-04 2006-09-16 Asm Inc Methods of making substitutionally carbon-doped crystalline si-containing materials by chemical vapor deposition

Also Published As

Publication number Publication date
JP2009212353A (ja) 2009-09-17
KR101208651B1 (ko) 2012-12-05
US20090226737A1 (en) 2009-09-10
EP2099073A2 (en) 2009-09-09
EP2099073A3 (en) 2013-06-19
EP2099073B1 (en) 2015-07-29
JP5343371B2 (ja) 2013-11-13
TW201001554A (en) 2010-01-01
US8864907B2 (en) 2014-10-21
KR20090095494A (ko) 2009-09-09

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