TWI411077B - 積體電路晶片 - Google Patents

積體電路晶片 Download PDF

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TWI411077B
TWI411077B TW099122962A TW99122962A TWI411077B TW I411077 B TWI411077 B TW I411077B TW 099122962 A TW099122962 A TW 099122962A TW 99122962 A TW99122962 A TW 99122962A TW I411077 B TWI411077 B TW I411077B
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layer
integrated circuit
metal layer
circuit chip
substrate
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TW099122962A
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TW201108376A (en
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Ming Tzong Yang
yu hua Huang
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Mediatek Inc
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Description

積體電路晶片
本發明有關於半導體技術，且特別有關於積體電路晶片之改進型接合墊結構。
當前，業界對於具有多功能及高性能之小型、廉價之電子產品有著迫切之需求。電路設計之主要趨勢係將儘可能多的電路器件整合至積體電路之中，以降低每晶圓之成本。
積體電路藉由於矽晶圓之表面形成半導體器件來製造。多層內連接(multi-level interconnetion)係形成於器件上，與器件主動元件(active element)接觸，且將其線連接(wiring)以生成需要的電路。導線層(wiring layer)可藉由以下步驟形成：於器件上沉積(deposit)介電層(dielectric layer)；於介電層中成型(pattern)且蝕刻(etch)接觸開口(contact opening)；而後於開口中沉積導體材料。導體層(conductive layer)應用於介電層之上且被成型以形成器件接觸之間之導線內連接(wiring interconnetion)，以此形成基本電路之第一層。電路更藉由利用位於附加的介電層之上且具有導體介層窗(via)之附加的導線層來內連接。
取決於積體電路整體之複雜度，多層之導線內連接可被使用。於最頂層(uppermost level)，導線終止於金屬銲墊，晶片之向外導線連接(external wiring connection)接合(bond)於金屬銲墊。頂部金屬層(top metal layer)或者鋁層(aluminum layer)可用於積體電路中，例如，用於製造整合電感器(integrated inductor)、金屬-氧化層-金屬(MOM)電容器、電阻器、或者重分佈層(redistribution layer，RDL)等RF器件。
接合墊(bonding pad)亦存在於頂部金屬層。於導線接合製程中，由於其上之壓力的影響，會發生非預期之顯著的變形。變形之接合墊可導致覆蓋(cover)於接合墊外圍(periphery)之鈍化層(passivation layer)之斷裂缺陷。為克服此問題，通常採用增大銲墊開口及/或兩個銲墊之間的空間之方法。然而，增大銲墊開口及銲墊間距(pitch)將導致晶片尺寸與成本的增加。
有鑑於此，特提供以下技術方案：
本發明之一實施例提供一種積體電路晶片，包含基板、頂部金屬層、複數個金屬間介電層、下部金屬層以及至少一接合墊。其中頂部金屬層位於基板之上；該等金屬間介電層包含頂部金屬間介電層，位於鈍化層下方；下部金屬層位於基板之上且低於頂部金屬層與頂部金屬間介電層；至少一接合墊位於下部金屬層之內。
本發明之另一實施例提供一種積體電路晶片，包含基板、頂部金屬層、電感器、複數個金屬間介電層、下部金屬層以及至少一接合墊。其中頂部金屬層位於基板之上；電感器形成於頂部金屬層之內，位於積體電路晶片之電感器形成區域；該等金屬間介電層包含頂部金屬間介電層，位於鈍化層下方；下部金屬層位於基板之上，且低於頂部金屬層與頂部金屬間介電層；至少一接合墊形成於下部金屬層，位於接合墊形成區域。
以上所述之積體電路晶片，提供一種新型接合墊結構，可解決先前技術中於導線接合製程中接合墊顯著變形的問題。
為使本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下。應注意，以下所述實施例僅用以例示本發明之目的，其並非本發明之限制。本發明之權利範圍應以申請專利範圍為準。
下文將結合所附圖式，對本發明之實例及實施例作詳細之說明。於本發明之說明書和圖式中，符號“Mn ”意指為金屬層之頂層(topmost layer)，例如鋁重分佈層，製造於積體電路晶片中。符號“Mn-1 ”意指為低於頂層一層之金屬層，以此類推，其中，優選地，n之範圍為2至10，但並不僅限於此。符號“V”意指為連接兩個相鄰 金屬層之介層窗。例如，V5 意指為內連接M5 與M6 之介層窗。
請參考第1圖，第1圖係根據本發明之一實施例之積體電路晶片1之一部分之橫截面示意圖。應可理解，第1圖之層或者元件未依據尺寸畫出，且被修飾以使之更清楚。積體電路晶片1可包含用於合併RF器件之頂部金屬層(Mn )之RF積體電路，例如電感器或者適合於RF電路之任一其他器件。用於RF器件之頂部金屬層(Mn)可為鋁層、銅層(copper layer)或者銅合金層(copper alloy layer)，其中鋁層為優選方案。
頂部金屬層可降低寄生損耗(parasitic loss)，因此，其改善了RF積體電路之品質因數(quality factor，Q)。於本實施例中，頂部金屬層之厚度不小於0.5微米(micrometer)。於一些實施例中，頂部金屬層可具有不小於1.0微米之厚度。於另一些實施例中，頂部金屬層可具有不小於3.0微米之厚度。
如第1圖所示，積體電路晶片1包含基板10，例如矽基板。基板10可為任一適合的半導體基板，例如矽鍺(SiGe)基板或者介電層上覆矽(Silicon on Insulator，SOI)基板。基本層12包含但不限於器件層，例如金氧半(MOS)或者雙極型器件；以及形成於基板10上之至少一層間介電(inter-layer dielectric，ILD)層。為簡潔起見，基本層12內包含導線及接觸/介層窗之內連接未繪示。多個金屬間介電(inter-metal dielectric，IMD)層14、16、18及20，包含頂部IMD層20，被提供於基本層12之上。每一該多個IMD層14、16、18及20 可包含但不限於氧化矽(silicon oxide)、氮化矽(silicon nitride)、碳化矽(silicon carbide)、氮氧化矽(silicon oxy-nitride)、低介電常數或者超低介電常數(ultra low-k，ULK)材料，例如有機(例如，芳香族碳氫化合物(SiLK))或者無機(例如，含氫的矽酸鹽(HSQ))材料或者其任一組合。鈍化層22位於至少一部分IMD層20之上。鈍化層22可為氧化矽、氮化矽、碳化矽、氮氧化矽、聚醯亞胺(polyimide)或者其任一組合或者類似物質。根據本實施例，鈍化層22具有0.5至6.0微米之厚度，但並不僅限於此。
多層金屬內連接40可被製造於對應之IMD層14、16、18及20內。為簡潔起見，僅Mn-2 、Vn-2 、Mn-1 及Mn 層被明確繪示於圖式中。RF器件，例如包含第一繞組(winding)24及鄰近於第一繞組24之第二繞組26之電感器200，被製造於位於積體電路晶片1之電感器形成區101內之頂部金屬層(Mn )內。根據本發明之本實施例，頂部金屬層(Mn)具有不小於0.5微米之厚度(h)。於一些實施例中，頂部金屬層可具有不小於1.0微米之厚度。於另一些實施例中，頂部金屬層可具有不小於3.0微米之厚度。電感器200之第一繞組24與第二繞組26之側壁(sidewall)與頂面(top surface)被鈍化層22覆蓋。儘管本實施例以電感器為例，本發明並不僅限於此。應可理解，其他RF器件，例如MOM電容器或者電阻器可形成於頂部金屬層(Mn )。進一步，頂部金屬層(Mn )可用於形成重分佈層。
根據本發明之本實施例，金屬層Mn-1 可由鋁製成，其中至少一接 合墊118形成於金屬層Mn-1 ，而金屬層Mn-2 可由傳統的銅鑲嵌(damascene)方式形成，例如單鑲嵌(single damascene)方式或者雙鑲嵌(dual damascene)方式。例如，金屬層Mn-2 可由單鑲嵌方式形成，而金屬層Mn-1 及積分介層窗層(integral via plug layer)Vn-2 可由傳統的鋁製程形成。此外，Mn-2 可由鋁形成。如本技術領域中具有通常知識者所知悉，銅鑲嵌方式提供一種形成耦接至積分介層窗之導線而不需要乾式蝕刻(dry etch)銅之解決方案。單鑲嵌或者雙鑲嵌結構可用於連接器件及/或積體電路之導線。
積體電路晶片1包含接合墊形成區102。至少一接合墊118形成於金屬層Mn-1 ，於接合墊形成區102之內。金屬層Mn-1 可薄於頂部金屬層(Mn )。例如，金屬層Mn-1 可具有約0.2-1微米之厚度。接合墊開口202形成於鈍化層22及IMD層20中以暴露接合墊118之上表面(top surface)之至少一部分，使得接合線30可於封裝組裝階段(package assembly stage)附著至接合墊118。接合墊開口202可具有約0.8-6.0微米之深度。根據本發明之本實施例，接合墊118優選為鋁銲墊，但並不僅限於此。
可選地，支撐結構114及116可被形成於接合墊118之下。支撐結構114及116可為任一合適之形狀或者組態(configuration)，以於導線接合製程期間為接合墊118提供足夠的機械支撐。例如，支撐結構114可為製造於金屬層Mn-2 內之仿真金屬板(dummy metal plate)，而支撐結構116可為多個介層窗，用於連接支撐結構114與接合墊 118。此外，接合墊118下之區域112之內，可形成主動電路(active circuit)、電路元件或內連接(未繪示)。
第2圖係依據本發明之另一實施例之積體電路晶片1a之一部分之橫截面之示意圖，其中相似之標號表示相似之層、區域或者元件。應可理解，第2圖之層或者元件未依據尺寸畫出，且被修飾以使之更清楚。如第2圖所示，類似地，積體電路晶片1a包含基板10。基本層12以及多個IMD層14、16、18及20，包含頂部IMD層20，被提供於基板10之上。每一該多個IMD層14、16、18及20可包含但不限於氧化矽、氮化矽、碳化矽、氮氧化矽、低介電常數或者超低介電常數材料，例如有機(例如，芳香族碳氫化合物)或者無機(例如，含氫的矽酸鹽)材料或者其任一組合。鈍化層22位於至少一部分IMD層20之上。鈍化層22可為氧化矽、氮化矽、碳化矽、氮氧化矽、聚醯亞胺或者其任一組合或者類似物質。根據本實施例，鈍化層22具有0.5至6.0微米之厚度，但並不僅限於此。
多層金屬內連接40可被製造於對應之IMD層14、16、18及20內。為簡潔起見，僅Mn-2 、Vn-2 、Mn-1 及Mn 層被明確繪示於圖式中。RF器件，例如包含第一繞組24及鄰近於第一繞組24之第二繞組26之電感器200，被製造於位於積體電路晶片1a之電感器形成區101內之頂部金屬層(Mn )內。根據本發明之本實施例，頂部金屬層(Mn)具有不小於0.5微米之厚度(h)。於一些實施例中，頂部金屬層可具有不小於1.0微米之厚度。於另一些實施例中，頂部金屬層可具有不 小於3.0微米之厚度。電感器200之第一繞組24與第二繞組26之側壁與頂面被鈍化層22覆蓋。
積體電路晶片1a更包含接合墊形成區102。至少一接合墊214形成於低於頂部金屬層Mn 之任一金屬層之內，例如金屬層Mn-2 ，於接合墊形成區102之內。接合墊開口302形成於鈍化層22及IMD層16、18及20中以暴露接合墊214之上表面之至少一部分，使得接合線30可於封裝組裝階段附著至接合墊214。接合墊開口302可具有約1.0-8.0微米之深度。請注意，如第2圖所示，接合墊214下之支撐結構可被省略。
以上所述僅為本發明之較佳實施例，舉凡熟悉本案之人士援根據本發明之精神所做之等效變化與修飾，皆應涵蓋於後附之申請專利範圍內。以上所述實施例僅用以例示本發明之目的，其並非本發明之限制。本發明之權利範圍應以申請專利範圍為準。
1、1a‧‧‧積體電路晶片
10‧‧‧基板
12‧‧‧基本層
14、16、18、20‧‧‧IMD層
22‧‧‧鈍化層
24‧‧‧第一繞組
26‧‧‧第二繞組
30‧‧‧接合線
40‧‧‧多層金屬內連接
101‧‧‧電感器形成區
102‧‧‧接合墊形成區
112‧‧‧接合墊下之區域
114、116‧‧‧支撐結構
118、214‧‧‧接合墊
200‧‧‧電感器
202、302‧‧‧接合墊開口
第1圖係根據本發明之一實施例之積體電路晶片1之一部分之橫截面示意圖。
第2圖係依據本發明之另一實施例之積體電路晶片1a之一部分之橫截面之示意圖。
1‧‧‧積體電路晶片
10‧‧‧基板
12‧‧‧基本層
14、16、18、20‧‧‧IMD層
22‧‧‧鈍化層
24‧‧‧第一繞組
26‧‧‧第二繞組
30‧‧‧接合線
40‧‧‧多層金屬內連接
101‧‧‧電感器形成區
102‧‧‧接合墊形成區
112‧‧‧接合墊下之區域區域
114、116‧‧‧支撐結構
118‧‧‧接合墊
200‧‧‧電感器
202‧‧‧接合墊開口

Claims (20)

  1. 一種積體電路晶片，包含：一基板；一頂部金屬層，位於該基板上方；複數個金屬間介電層，包含一頂部金屬間介電層，位於一鈍化層下方；一下部金屬層，位於該基板上或該基板上方，且低於該頂部金屬層與該頂部金屬間介電層；以及至少一接合墊，位於該下部金屬層之內。
  2. 如申請專利範圍第1項所述之積體電路晶片，更包含一開口，用於暴露該接合墊之至少一部分。
  3. 如申請專利範圍第2項所述之積體電路晶片，其中該頂部金屬間介電層，位於該頂部金屬層與該下部金屬層之間；該鈍化層，位於該頂部金屬層之至少一部分之上；以及該開口被形成於該頂部金屬間介電層與該鈍化層之內。
  4. 如申請專利範圍第3項所述之積體電路晶片，其中該鈍化層包含氧化矽、氮化矽、碳化矽、氮氧化矽、聚醯亞胺或者其任一結合。
  5. 如申請專利範圍第3項所述之積體電路晶片，其中該鈍化層具有0.5-6.0微米之一厚度。
  6. 如申請專利範圍第1項所述之積體電路晶片，其中該頂部金屬層係一鋁層。
  7. 如申請專利範圍第1項所述之積體電路晶片，其中該頂部金屬層係一重分佈層。
  8. 如申請專利範圍第1項所述之積體電路晶片，其中該頂部金屬層具有不小於0.5微米之一厚度。
  9. 如申請專利範圍第1項所述之積體電路晶片，其中該下部金屬層係一鋁層。
  10. 如申請專利範圍第1項所述之積體電路晶片，更包含一支撐結構，位於該接合墊之下。
  11. 一種積體電路晶片，包含：一基板；一頂部金屬層，位於該基板上方；一電感器，形成於位於該積體電路晶片之電感器形成區域內之該頂部金屬層內；複數個金屬層間介電層，包含一頂部金屬間介電層，位於一鈍化層下方；一下部金屬層，位於該基板上或者該基板上方，且低於該頂部金 屬層與該頂部金屬間介電層；以及至少一接合墊，形成於該下部金屬層，位於一接合墊形成區域之內。
  12. 如申請專利範圍第11項所述之積體電路晶片，其中該頂部金屬間介電層，位於該頂部金屬層與該下部金屬層之間；該鈍化層，位於該頂部金屬層之至少一部分之上；以及更包含：一開口，位於該頂部金屬間介電層與該鈍化層之內，用於暴露該接合墊之至少一部分。
  13. 如申請專利範圍第12項所述之積體電路晶片，其中該鈍化層包含氧化矽、氮化矽、碳化矽、氮氧化矽、聚醯亞胺或者其任一結合。
  14. 如申請專利範圍第12項所述之積體電路晶片，其中該鈍化層具有0.5-6.0微米之一厚度。
  15. 如申請專利範圍第11項所述之積體電路晶片，其中該頂部金屬層係一鋁層。
  16. 如申請專利範圍第11項所述之積體電路晶片，其中該頂部金屬層係一重分佈層。
  17. 如申請專利範圍第11項所述之積體電路晶片，其中該頂部金屬層具有不小於0.5微米之一厚度。
  18. 如申請專利範圍第11項所述之積體電路晶片，其中該下部金屬層係一鋁層。
  19. 如申請專利範圍第11項所述之積體電路晶片，更包含一支撐結構，位於該接合墊之下。
  20. 如申請專利範圍第11項所述之積體電路晶片，其中該積體電路晶片包含使用該電感器之一射頻積體電路。
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