TWI409946B - 半導體裝置及其形成方法 - Google Patents
半導體裝置及其形成方法 Download PDFInfo
- Publication number
- TWI409946B TWI409946B TW095139951A TW95139951A TWI409946B TW I409946 B TWI409946 B TW I409946B TW 095139951 A TW095139951 A TW 095139951A TW 95139951 A TW95139951 A TW 95139951A TW I409946 B TWI409946 B TW I409946B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- region
- semiconductor region
- layer
- concentration
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 259
- 238000000034 method Methods 0.000 title claims description 17
- 239000002019 doping agent Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 48
- 238000002955 isolation Methods 0.000 claims description 36
- 238000004377 microelectronic Methods 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 description 16
- 210000000746 body region Anatomy 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 7
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 208000031872 Body Remains Diseases 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/264,068 US7276419B2 (en) | 2005-10-31 | 2005-10-31 | Semiconductor device and method for forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200725889A TW200725889A (en) | 2007-07-01 |
| TWI409946B true TWI409946B (zh) | 2013-09-21 |
Family
ID=37995144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095139951A TWI409946B (zh) | 2005-10-31 | 2006-10-30 | 半導體裝置及其形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7276419B2 (enExample) |
| EP (1) | EP1966826A4 (enExample) |
| JP (1) | JP2009521131A (enExample) |
| KR (1) | KR20080073313A (enExample) |
| TW (1) | TWI409946B (enExample) |
| WO (1) | WO2008076092A2 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100875159B1 (ko) * | 2007-05-25 | 2008-12-22 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
| KR20090007053A (ko) * | 2007-07-13 | 2009-01-16 | 매그나칩 반도체 유한회사 | 고전압 소자 및 그 제조방법 |
| JP5338433B2 (ja) * | 2008-09-30 | 2013-11-13 | 富士電機株式会社 | 窒化ガリウム半導体装置およびその製造方法 |
| JP5769915B2 (ja) * | 2009-04-24 | 2015-08-26 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP5434501B2 (ja) * | 2009-11-13 | 2014-03-05 | 富士通セミコンダクター株式会社 | Ｍｏｓトランジスタおよび半導体集積回路装置、半導体装置 |
| US8471340B2 (en) * | 2009-11-30 | 2013-06-25 | International Business Machines Corporation | Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure |
| US8698244B2 (en) * | 2009-11-30 | 2014-04-15 | International Business Machines Corporation | Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method |
| JP5784512B2 (ja) * | 2012-01-13 | 2015-09-24 | 株式会社東芝 | 半導体装置 |
| JP6120586B2 (ja) * | 2013-01-25 | 2017-04-26 | ローム株式会社 | ｎチャネル二重拡散ＭＯＳ型トランジスタおよび半導体複合素子 |
| TWI668864B (zh) | 2018-08-09 | 2019-08-11 | 江啟文 | 具有電流路徑方向控制的半導體結構 |
| CN117457747B (zh) * | 2023-12-22 | 2024-06-04 | 粤芯半导体技术股份有限公司 | 一种嵌入式闪存工艺的demos结构及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5387553A (en) * | 1992-03-24 | 1995-02-07 | International Business Machines Corporation | Method for forming a lateral bipolar transistor with dual collector, circular symmetry and composite structure |
| TW200301563A (en) * | 2001-12-28 | 2003-07-01 | Sanyo Electric Co | Semiconductor device and manufacturing method thereof |
| US6882023B2 (en) * | 2002-10-31 | 2005-04-19 | Motorola, Inc. | Floating resurf LDMOSFET and method of manufacturing same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3374099B2 (ja) * | 1999-03-12 | 2003-02-04 | 三洋電機株式会社 | 半導体装置の製造方法 |
| US6548874B1 (en) * | 1999-10-27 | 2003-04-15 | Texas Instruments Incorporated | Higher voltage transistors for sub micron CMOS processes |
| US6573562B2 (en) * | 2001-10-31 | 2003-06-03 | Motorola, Inc. | Semiconductor component and method of operation |
| KR100958421B1 (ko) * | 2002-09-14 | 2010-05-18 | 페어차일드코리아반도체 주식회사 | 전력 소자 및 그 제조방법 |
| US6693339B1 (en) * | 2003-03-14 | 2004-02-17 | Motorola, Inc. | Semiconductor component and method of manufacturing same |
| JP2007027641A (ja) * | 2005-07-21 | 2007-02-01 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2005
- 2005-10-31 US US11/264,068 patent/US7276419B2/en active Active
-
2006
- 2006-10-18 EP EP06851955.2A patent/EP1966826A4/en not_active Withdrawn
- 2006-10-18 JP JP2008550308A patent/JP2009521131A/ja active Pending
- 2006-10-18 KR KR1020087013091A patent/KR20080073313A/ko not_active Ceased
- 2006-10-18 WO PCT/US2006/040873 patent/WO2008076092A2/en not_active Ceased
- 2006-10-30 TW TW095139951A patent/TWI409946B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5387553A (en) * | 1992-03-24 | 1995-02-07 | International Business Machines Corporation | Method for forming a lateral bipolar transistor with dual collector, circular symmetry and composite structure |
| TW200301563A (en) * | 2001-12-28 | 2003-07-01 | Sanyo Electric Co | Semiconductor device and manufacturing method thereof |
| US6882023B2 (en) * | 2002-10-31 | 2005-04-19 | Motorola, Inc. | Floating resurf LDMOSFET and method of manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009521131A (ja) | 2009-05-28 |
| EP1966826A4 (en) | 2013-06-19 |
| WO2008076092A2 (en) | 2008-06-26 |
| US20070096225A1 (en) | 2007-05-03 |
| EP1966826A2 (en) | 2008-09-10 |
| WO2008076092A3 (en) | 2009-02-12 |
| TW200725889A (en) | 2007-07-01 |
| US7276419B2 (en) | 2007-10-02 |
| KR20080073313A (ko) | 2008-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |