KR20080073313A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR20080073313A
KR20080073313A KR1020087013091A KR20087013091A KR20080073313A KR 20080073313 A KR20080073313 A KR 20080073313A KR 1020087013091 A KR1020087013091 A KR 1020087013091A KR 20087013091 A KR20087013091 A KR 20087013091A KR 20080073313 A KR20080073313 A KR 20080073313A
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South Korea
Prior art keywords
region
semiconductor
semiconductor region
layer
concentration
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Ceased
Application number
KR1020087013091A
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English (en)
Korean (ko)
Inventor
비스누 켐카
존 엠. 피갓
롱휴아 주
아미타바 보세
란달 씨. 그레이
제프리 제이. 브라운
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20080073313A publication Critical patent/KR20080073313A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
KR1020087013091A 2005-10-31 2006-10-18 반도체 장치 및 그 제조 방법 Ceased KR20080073313A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/264,068 US7276419B2 (en) 2005-10-31 2005-10-31 Semiconductor device and method for forming the same
US11/264068 2005-10-31

Publications (1)

Publication Number Publication Date
KR20080073313A true KR20080073313A (ko) 2008-08-08

Family

ID=37995144

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087013091A Ceased KR20080073313A (ko) 2005-10-31 2006-10-18 반도체 장치 및 그 제조 방법

Country Status (6)

Country Link
US (1) US7276419B2 (enExample)
EP (1) EP1966826A4 (enExample)
JP (1) JP2009521131A (enExample)
KR (1) KR20080073313A (enExample)
TW (1) TWI409946B (enExample)
WO (1) WO2008076092A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100875159B1 (ko) * 2007-05-25 2008-12-22 주식회사 동부하이텍 반도체 소자 및 그의 제조 방법
KR20090007053A (ko) * 2007-07-13 2009-01-16 매그나칩 반도체 유한회사 고전압 소자 및 그 제조방법
JP5338433B2 (ja) * 2008-09-30 2013-11-13 富士電機株式会社 窒化ガリウム半導体装置およびその製造方法
JP5769915B2 (ja) * 2009-04-24 2015-08-26 ルネサスエレクトロニクス株式会社 半導体装置
JP5434501B2 (ja) * 2009-11-13 2014-03-05 富士通セミコンダクター株式会社 Ｍｏｓトランジスタおよび半導体集積回路装置、半導体装置
US8698244B2 (en) * 2009-11-30 2014-04-15 International Business Machines Corporation Silicon-on-insulator (SOI) structure configured for reduced harmonics, design structure and method
US8471340B2 (en) 2009-11-30 2013-06-25 International Business Machines Corporation Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure
JP5784512B2 (ja) * 2012-01-13 2015-09-24 株式会社東芝 半導体装置
JP6120586B2 (ja) * 2013-01-25 2017-04-26 ローム株式会社 ｎチャネル二重拡散ＭＯＳ型トランジスタおよび半導体複合素子
TWI668864B (zh) * 2018-08-09 2019-08-11 江啟文 具有電流路徑方向控制的半導體結構
CN117457747B (zh) * 2023-12-22 2024-06-04 粤芯半导体技术股份有限公司 一种嵌入式闪存工艺的demos结构及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387553A (en) * 1992-03-24 1995-02-07 International Business Machines Corporation Method for forming a lateral bipolar transistor with dual collector, circular symmetry and composite structure
JP3374099B2 (ja) * 1999-03-12 2003-02-04 三洋電機株式会社 半導体装置の製造方法
US6548874B1 (en) * 1999-10-27 2003-04-15 Texas Instruments Incorporated Higher voltage transistors for sub micron CMOS processes
US6573562B2 (en) * 2001-10-31 2003-06-03 Motorola, Inc. Semiconductor component and method of operation
JP2003197791A (ja) * 2001-12-28 2003-07-11 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR100958421B1 (ko) * 2002-09-14 2010-05-18 페어차일드코리아반도체 주식회사 전력 소자 및 그 제조방법
US6882023B2 (en) * 2002-10-31 2005-04-19 Motorola, Inc. Floating resurf LDMOSFET and method of manufacturing same
US6693339B1 (en) * 2003-03-14 2004-02-17 Motorola, Inc. Semiconductor component and method of manufacturing same
JP2007027641A (ja) * 2005-07-21 2007-02-01 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20070096225A1 (en) 2007-05-03
TWI409946B (zh) 2013-09-21
TW200725889A (en) 2007-07-01
EP1966826A4 (en) 2013-06-19
JP2009521131A (ja) 2009-05-28
WO2008076092A2 (en) 2008-06-26
US7276419B2 (en) 2007-10-02
EP1966826A2 (en) 2008-09-10
WO2008076092A3 (en) 2009-02-12

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