TWI409595B - 測量設備，具有此測量設備之投影曝光設備以及裝置製造方法 - Google Patents

測量設備，具有此測量設備之投影曝光設備以及裝置製造方法 Download PDF

Info

Publication number
TWI409595B
TWI409595B TW096145153A TW96145153A TWI409595B TW I409595 B TWI409595 B TW I409595B TW 096145153 A TW096145153 A TW 096145153A TW 96145153 A TW96145153 A TW 96145153A TW I409595 B TWI409595 B TW I409595B
Authority
TW
Taiwan
Prior art keywords
indication
value
substrate
exposure
measuring
Prior art date
Application number
TW096145153A
Other languages
English (en)
Chinese (zh)
Other versions
TW200842520A (en
Inventor
松本隆宏
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW200842520A publication Critical patent/TW200842520A/zh
Application granted granted Critical
Publication of TWI409595B publication Critical patent/TWI409595B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW096145153A 2006-12-06 2007-11-28 測量設備，具有此測量設備之投影曝光設備以及裝置製造方法 TWI409595B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006329915A JP5084239B2 (ja) 2006-12-06 2006-12-06 計測装置、露光装置並びにデバイス製造方法

Publications (2)

Publication Number Publication Date
TW200842520A TW200842520A (en) 2008-11-01
TWI409595B true TWI409595B (zh) 2013-09-21

Family

ID=39497572

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096145153A TWI409595B (zh) 2006-12-06 2007-11-28 測量設備，具有此測量設備之投影曝光設備以及裝置製造方法

Country Status (4)

Country Link
US (1) US8537334B2 (enExample)
JP (1) JP5084239B2 (enExample)
KR (1) KR20080052397A (enExample)
TW (1) TWI409595B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100741985B1 (ko) * 2006-07-13 2007-07-23 삼성전자주식회사 기준 이미지 설정 방법 및 장치, 및 이를 이용한 패턴 검사방법 및 장치
JP5199789B2 (ja) 2008-08-25 2013-05-15 株式会社ディスコ レーザー加工装置及びレーザー加工方法
JP2010098143A (ja) * 2008-10-16 2010-04-30 Canon Inc 露光装置およびデバイス製造方法
WO2014098220A1 (ja) * 2012-12-20 2014-06-26 株式会社ニコン 評価方法及び装置、加工方法、並びに露光システム
KR102238708B1 (ko) 2014-08-19 2021-04-12 삼성전자주식회사 리소그래피 공정의 초점 이동 체크 방법 및 이를 이용한 전사 패턴 오류 분석 방법
WO2017016839A1 (en) * 2015-07-24 2017-02-02 Asml Netherlands B.V. Inspection apparatus, inspection method, lithographic apparatus and manufacturing method
EP3932673B1 (en) * 2020-07-02 2023-04-05 Bobst Bielefeld GmbH Printing plate, method for detecting a position of a printing plate, control unit for a system for detecting a position of a printing plate, system for detecting a position of a printing plate, and computer program

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040059540A1 (en) * 2002-09-24 2004-03-25 Canon Kabushiki Kaisha Position detecting device and position detecting method
US20050002035A1 (en) * 2003-05-27 2005-01-06 Kazuhiko Mishima Exposure apparatus
US20060103823A1 (en) * 2004-11-15 2006-05-18 Oki Electric Industry Co., Ltd. Focus monitoring method
US20060234136A1 (en) * 2005-04-15 2006-10-19 Samsung Electronics Co., Ltd. Systems and methods for detecting focus variation in photolithograph process using test features printed from photomask test pattern images

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JP2580668B2 (ja) 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
JPH05152186A (ja) * 1991-05-01 1993-06-18 Canon Inc 測定装置及び露光装置及び露光装置の位置決め方法
JP3265668B2 (ja) * 1993-01-13 2002-03-11 株式会社ニコン ベストフォーカス位置の算出方法
US5654553A (en) * 1993-06-10 1997-08-05 Nikon Corporation Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate
US5754299A (en) * 1995-01-13 1998-05-19 Nikon Corporation Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus
JPH08264409A (ja) * 1995-03-20 1996-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
KR0164078B1 (ko) * 1995-12-29 1998-12-15 김주용 노광 에너지와 포커스를 모니터 하는 오버레이 마크
US5757505A (en) * 1996-02-16 1998-05-26 Nikon Corporation Exposure apparatus
US5835227A (en) * 1997-03-14 1998-11-10 Nikon Precision Inc. Method and apparatus for determining performance characteristics in lithographic tools
US5965309A (en) 1997-08-28 1999-10-12 International Business Machines Corporation Focus or exposure dose parameter control system using tone reversing patterns
JP4109765B2 (ja) * 1998-09-14 2008-07-02 キヤノン株式会社 結像性能評価方法
WO2000030163A1 (en) * 1998-11-18 2000-05-25 Nikon Corporation Exposure method and device
JP4329146B2 (ja) * 1999-02-04 2009-09-09 株式会社ニコン 位置検出装置及び方法、並びに露光装置
US6440616B1 (en) 1999-09-28 2002-08-27 Kabushiki Kaisha Toshiba Mask and method for focus monitoring
JP2001100392A (ja) * 1999-09-28 2001-04-13 Toshiba Corp フォーカスモニタ用マスク及びフォーカスモニタ方法
JP3927774B2 (ja) 2000-03-21 2007-06-13 キヤノン株式会社 計測方法及びそれを用いた投影露光装置
JP2001291752A (ja) 2000-04-05 2001-10-19 Canon Inc 異物検査方法及び装置、及び該検査方法を用いた露光装置
JP2001345250A (ja) 2000-06-01 2001-12-14 Canon Inc 位置合せ方法、位置合せ装置、プロファイラ、露光装置、半導体デバイス製造方法、半導体製造工場、および露光装置の保守方法
JP3297423B2 (ja) 2000-08-09 2002-07-02 株式会社東芝 フォーカステストマスク、並びにそれを用いたフォーカス及び収差の測定方法
JP3906035B2 (ja) * 2001-03-29 2007-04-18 株式会社東芝 半導体製造装置の制御方法
TWI225665B (en) 2001-10-17 2004-12-21 Canon Kk Apparatus control system, apparatus control method, semiconductor exposure apparatus, semiconductor exposure apparatus control method and semiconductor device manufacturing method
JP3839306B2 (ja) 2001-11-08 2006-11-01 株式会社ルネサステクノロジ 半導体装置の製造方法および製造システム
JP4154197B2 (ja) * 2002-09-20 2008-09-24 キヤノン株式会社 位置検出方法、位置検出装置及び露光装置
US7253885B2 (en) 2003-12-05 2007-08-07 Canon Kabushiki Kaisha Wavelength selecting method, position detecting method and apparatus, exposure method and apparatus, and device manufacturing method
JP4658589B2 (ja) * 2004-12-28 2011-03-23 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040059540A1 (en) * 2002-09-24 2004-03-25 Canon Kabushiki Kaisha Position detecting device and position detecting method
US20050002035A1 (en) * 2003-05-27 2005-01-06 Kazuhiko Mishima Exposure apparatus
US20060103823A1 (en) * 2004-11-15 2006-05-18 Oki Electric Industry Co., Ltd. Focus monitoring method
US20060234136A1 (en) * 2005-04-15 2006-10-19 Samsung Electronics Co., Ltd. Systems and methods for detecting focus variation in photolithograph process using test features printed from photomask test pattern images

Also Published As

Publication number Publication date
JP5084239B2 (ja) 2012-11-28
TW200842520A (en) 2008-11-01
US20080137052A1 (en) 2008-06-12
JP2008147258A (ja) 2008-06-26
KR20080052397A (ko) 2008-06-11
US8537334B2 (en) 2013-09-17

Similar Documents

Publication Publication Date Title
US7528966B2 (en) Position detection apparatus and exposure apparatus
US6636311B1 (en) Alignment method and exposure apparatus using the same
US8472009B2 (en) Exposure apparatus and device manufacturing method
US6850327B2 (en) Inspection method and apparatus for projection optical systems
JP5219534B2 (ja) 露光装置及びデバイスの製造方法
US6737207B2 (en) Method for evaluating lithography system and method for adjusting substrate-processing apparatus
TWI409595B (zh) 測量設備，具有此測量設備之投影曝光設備以及裝置製造方法
JP4692862B2 (ja) 検査装置、該検査装置を備えた露光装置、およびマイクロデバイスの製造方法
US6344896B1 (en) Method and apparatus for measuring positional shift/distortion by aberration
KR20000071810A (ko) 수차에 기인한 위치상의 이동과 위치 어긋남의 측정 장치및 방법
US7209215B2 (en) Exposure apparatus and method
US8345220B2 (en) Aberration measurement method, exposure apparatus, and device manufacturing method
JP2006269669A (ja) 計測装置及び計測方法、露光装置並びにデバイス製造方法
TWI864352B (zh) 測量設備、曝光設備及物品製造方法
US11531276B2 (en) Exposure apparatus, exposure method, and article manufacturing method
US10222293B2 (en) Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method by detecting a light amount of measuring light
KR102904604B1 (ko) 노광 장치, 노광 방법 및 물품의 제조 방법
JP2011509401A (ja) 折返し光学エンコーダ及びその用途
US20100177290A1 (en) Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method
JPH0922868A (ja) 投影露光装置及びそれを用いた半導体デバイスの製造方法
JP2010133980A (ja) 検査装置、該検査装置を備えた露光装置、およびマイクロデバイスの製造方法
HK1136692A (en) Optical characteristic measuring method, optical characteristic adjusting method, exposing device, exposing method, and exposing device manufacturing method
HK1136691A (en) Optical characteristic measurement method, optical characteristic adjusting method, exposure device, exposure method, and exposure device manufacturing method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees