TWI407552B - ５－電晶體非揮發性記憶體單元 - Google Patents

５－電晶體非揮發性記憶體單元 Download PDF

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Publication number
TWI407552B
TWI407552B TW099145118A TW99145118A TWI407552B TW I407552 B TWI407552 B TW I407552B TW 099145118 A TW099145118 A TW 099145118A TW 99145118 A TW99145118 A TW 99145118A TW I407552 B TWI407552 B TW I407552B
Authority
TW
Taiwan
Prior art keywords
electrode
transistor
array
voltage
nmos
Prior art date
Application number
TW099145118A
Other languages
English (en)
Chinese (zh)
Other versions
TW201143034A (en
Inventor
Pavel Poplevine
Ernes Ho
Umer Khan
Hengyang James Lin
Original Assignee
Nat Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Semiconductor Corp filed Critical Nat Semiconductor Corp
Publication of TW201143034A publication Critical patent/TW201143034A/zh
Application granted granted Critical
Publication of TWI407552B publication Critical patent/TWI407552B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW099145118A 2010-02-08 2010-12-22 ５－電晶體非揮發性記憶體單元 TWI407552B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/702,061 US8284600B1 (en) 2010-02-08 2010-02-08 5-transistor non-volatile memory cell

Publications (2)

Publication Number Publication Date
TW201143034A TW201143034A (en) 2011-12-01
TWI407552B true TWI407552B (zh) 2013-09-01

Family

ID=44356029

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099145118A TWI407552B (zh) 2010-02-08 2010-12-22 ５－電晶體非揮發性記憶體單元

Country Status (5)

Country Link
US (1) US8284600B1 (enExample)
JP (1) JP5632490B2 (enExample)
CN (1) CN102741936B (enExample)
TW (1) TWI407552B (enExample)
WO (1) WO2011096978A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8958245B2 (en) 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
US8355282B2 (en) * 2010-06-17 2013-01-15 Ememory Technology Inc. Logic-based multiple time programming memory cell
US9042174B2 (en) 2010-06-17 2015-05-26 Ememory Technology Inc. Non-volatile memory cell
US8804407B1 (en) * 2011-07-12 2014-08-12 Altera Corporation PMOS pass gate
US8995175B1 (en) 2012-01-13 2015-03-31 Altera Corporation Memory circuit with PMOS access transistors
US8921175B2 (en) 2012-07-20 2014-12-30 Semiconductor Components Industries, Llc Process of forming an electronic device including a nonvolatile memory cell
US9362001B2 (en) 2014-10-14 2016-06-07 Ememory Technology Inc. Memory cell capable of operating under low voltage conditions
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
TWI602183B (zh) * 2016-03-10 2017-10-11 力旺電子股份有限公司 記憶體單元及記憶體陣列
EP3546063B1 (en) * 2018-03-26 2020-12-30 IMEC vzw A molecular synthesis device
US11694751B2 (en) * 2019-11-30 2023-07-04 Semibrain Inc. Logic compatible flash memory programming with a pulse width control scheme

Citations (4)

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US6191980B1 (en) * 2000-03-07 2001-02-20 Lucent Technologies, Inc. Single-poly non-volatile memory cell having low-capacitance erase gate
US7041763B2 (en) * 2000-07-14 2006-05-09 Simon Fraser University Photochromic polymers and methods of synthesizing same
US20070070707A1 (en) * 2005-09-29 2007-03-29 Yasue Yamamoto Nonvolatile semiconductor memory device
US20090262548A1 (en) * 2008-04-16 2009-10-22 Kojima Press Industry Co., Ltd. Vehicle interior illumination apparatus

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US5596524A (en) 1995-04-21 1997-01-21 Advanced Micro Devices, Inc. CMOS memory cell with gate oxide of both NMOS and PMOS transistors as tunneling window for program and erase
US6201732B1 (en) * 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US6137723A (en) 1998-04-01 2000-10-24 National Semiconductor Corporation Memory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasure
US6867622B2 (en) * 2003-01-07 2005-03-15 Xicor, Inc. Method and apparatus for dual conduction analog programming
US6903978B1 (en) 2003-09-17 2005-06-07 National Semiconductor Corporation Method of PMOS stacked-gate memory cell programming enhancement utilizing stair-like pulses of control gate voltage
US7042763B1 (en) * 2004-07-08 2006-05-09 National Semiconductor Corporation Programming method for nonvolatile memory cell
US6992927B1 (en) 2004-07-08 2006-01-31 National Semiconductor Corporation Nonvolatile memory cell
US6985386B1 (en) * 2004-07-08 2006-01-10 National Semiconductor Corporation Programming method for nonvolatile memory cell
US7164606B1 (en) 2005-07-15 2007-01-16 National Semiconductor Corporation Reverse fowler-nordheim tunneling programming for non-volatile memory cell
US7167392B1 (en) 2005-07-15 2007-01-23 National Semiconductor Corporation Non-volatile memory cell with improved programming technique
US7326994B2 (en) * 2005-10-12 2008-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Logic compatible non-volatile memory cell
US7483310B1 (en) * 2006-11-02 2009-01-27 National Semiconductor Corporation System and method for providing high endurance low cost CMOS compatible EEPROM devices
US7755941B2 (en) * 2007-02-23 2010-07-13 Panasonic Corporation Nonvolatile semiconductor memory device
US7436710B2 (en) 2007-03-12 2008-10-14 Maxim Integrated Products, Inc. EEPROM memory device with cell having NMOS in a P pocket as a control gate, PMOS program/erase transistor, and PMOS access transistor in a common well
JP5228195B2 (ja) * 2007-04-20 2013-07-03 インターチップ株式会社 不揮発性メモリ内蔵シフトレジスタ
US7889553B2 (en) * 2007-04-24 2011-02-15 Novelics, Llc. Single-poly non-volatile memory cell
JP5266443B2 (ja) * 2008-04-18 2013-08-21 インターチップ株式会社 不揮発性メモリセル及び不揮発性メモリセル内蔵データラッチ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6191980B1 (en) * 2000-03-07 2001-02-20 Lucent Technologies, Inc. Single-poly non-volatile memory cell having low-capacitance erase gate
US7041763B2 (en) * 2000-07-14 2006-05-09 Simon Fraser University Photochromic polymers and methods of synthesizing same
US20070070707A1 (en) * 2005-09-29 2007-03-29 Yasue Yamamoto Nonvolatile semiconductor memory device
US20090262548A1 (en) * 2008-04-16 2009-10-22 Kojima Press Industry Co., Ltd. Vehicle interior illumination apparatus

Also Published As

Publication number Publication date
US8284600B1 (en) 2012-10-09
TW201143034A (en) 2011-12-01
WO2011096978A2 (en) 2011-08-11
JP5632490B2 (ja) 2014-11-26
CN102741936A (zh) 2012-10-17
WO2011096978A3 (en) 2011-09-29
CN102741936B (zh) 2016-08-24
JP2013519182A (ja) 2013-05-23

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