TWI404793B - 用於化學機械拋光應用上的超純膠狀矽土 - Google Patents

用於化學機械拋光應用上的超純膠狀矽土 Download PDF

Info

Publication number
TWI404793B
TWI404793B TW095135541A TW95135541A TWI404793B TW I404793 B TWI404793 B TW I404793B TW 095135541 A TW095135541 A TW 095135541A TW 95135541 A TW95135541 A TW 95135541A TW I404793 B TWI404793 B TW I404793B
Authority
TW
Taiwan
Prior art keywords
colloidal alumina
composition
ppm
weight
particles
Prior art date
Application number
TW095135541A
Other languages
English (en)
Chinese (zh)
Other versions
TW200724655A (en
Inventor
狄帕克 馬休理克
王昱湖
肯 達爾柏瑞吉
傑特Ｒ. Ｍ. 莫耶特斯
塞德Ｈ. 莫聖尼
尼可Ｒ. 寇特茲
胡賓
溫立慶
Original Assignee
平面解決方案有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 平面解決方案有限公司 filed Critical 平面解決方案有限公司
Publication of TW200724655A publication Critical patent/TW200724655A/zh
Application granted granted Critical
Publication of TWI404793B publication Critical patent/TWI404793B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/141—Preparation of hydrosols or aqueous dispersions
    • C01B33/142—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates
    • C01B33/143—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates
    • C01B33/1435—Preparation of hydrosols or aqueous dispersions by acidic treatment of silicates of aqueous solutions of silicates using ion exchangers
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/146—After-treatment of sols
    • C01B33/148—Concentration; Drying; Dehydration; Stabilisation; Purification
    • C01B33/1485—Stabilisation, e.g. prevention of gelling; Purification
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Silicon Compounds (AREA)
TW095135541A 2005-09-26 2006-09-26 用於化學機械拋光應用上的超純膠狀矽土 TWI404793B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72061105P 2005-09-26 2005-09-26

Publications (2)

Publication Number Publication Date
TW200724655A TW200724655A (en) 2007-07-01
TWI404793B true TWI404793B (zh) 2013-08-11

Family

ID=37900323

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135541A TWI404793B (zh) 2005-09-26 2006-09-26 用於化學機械拋光應用上的超純膠狀矽土

Country Status (6)

Country Link
US (3) US8211193B2 (https=)
EP (1) EP1966410B1 (https=)
JP (1) JP5345397B2 (https=)
KR (2) KR20080059266A (https=)
TW (1) TWI404793B (https=)
WO (1) WO2007038321A2 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1966410B1 (en) * 2005-09-26 2018-12-26 Planar Solutions LLC Ultrapure colloidal silica for use in chemical mechanical polishing applications
US20080220610A1 (en) * 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
US9550683B2 (en) * 2007-03-27 2017-01-24 Fuso Chemical Co., Ltd. Colloidal silica, and method for production thereof
US20110081780A1 (en) * 2008-02-18 2011-04-07 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
US9090799B2 (en) * 2010-11-08 2015-07-28 Fujimi Incorporated Composition for polishing and method of polishing semiconductor substrate using same
CN103403124B (zh) 2011-02-22 2015-09-30 赢创德固赛有限公司 由碱金属硅酸盐溶液制备高纯度含水胶态二氧化硅溶胶的方法
CN102690604A (zh) * 2011-03-24 2012-09-26 中国科学院上海微系统与信息技术研究所 化学机械抛光液
TWI681929B (zh) * 2011-12-28 2020-01-11 日揮觸媒化成股份有限公司 高純度氧化矽溶膠及其製造方法
US20160152998A1 (en) 2013-06-24 2016-06-02 North Carolina State University Transgenic Expression Of Archaea Superoxide Reductase
US8974692B2 (en) * 2013-06-27 2015-03-10 Air Products And Chemicals, Inc. Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications
US9302228B2 (en) 2014-02-28 2016-04-05 Pall Corporation Charged porous polymeric membrane with high void volume
US9737860B2 (en) 2014-02-28 2017-08-22 Pall Corporation Hollow fiber membrane having hexagonal voids
US9446355B2 (en) 2014-02-28 2016-09-20 Pall Corporation Porous polymeric membrane with high void volume
US9764292B2 (en) 2014-02-28 2017-09-19 Pall Corporation Porous polymeric membrane with high void volume
US9610548B2 (en) 2014-02-28 2017-04-04 Pall Corporation Composite porous polymeric membrane with high void volume
US9776142B2 (en) 2014-02-28 2017-10-03 Pall Corporation Porous polymeric membrane with high void volume
US9561473B2 (en) 2014-02-28 2017-02-07 Pall Corporation Charged hollow fiber membrane having hexagonal voids
US9309126B2 (en) 2014-02-28 2016-04-12 Pall Corporation Rapidly dissolvable nanoparticles
JP6366308B2 (ja) * 2014-03-12 2018-08-01 株式会社ディスコ 加工方法
KR102464630B1 (ko) * 2014-06-25 2022-11-08 씨엠씨 머티리얼즈, 인코포레이티드 콜로이드성 실리카 화학적-기계적 연마 조성물
CN105802507A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN111087930A (zh) * 2019-12-23 2020-05-01 长江存储科技有限责任公司 一种化学机械抛光研磨剂的制备方法及化学机械抛光方法
KR102513110B1 (ko) * 2020-08-28 2023-03-24 (주)에이스나노켐 초고순도 콜로이달 실리카 입자의 제조방법 및 그에 의해 제조된 초고순도 콜로이달 실리카 입자
US20240351889A1 (en) 2021-08-19 2024-10-24 Merck Patent Gmbh Method for producing silica particles, silica particles produced by such method, compositions and uses of such silica particles
CN115784245B (zh) * 2022-12-29 2024-01-16 苏州西丽卡电子材料有限公司 一种疏水性高纯度微米级球形二氧化硅粉体的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1640974A (zh) * 2003-12-25 2005-07-20 福吉米株式会社 抛光组合物和抛光方法
CN1670115A (zh) * 2004-03-19 2005-09-21 福吉米株式会社 抛光用组合物及抛光方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947376A (en) * 1969-04-28 1976-03-30 Nalco Chemical Company Silica sols containing large particle size silica
US5063179A (en) * 1990-03-02 1991-11-05 Cabot Corporation Process for making non-porous micron-sized high purity silica
US5168928A (en) * 1991-08-15 1992-12-08 Halliburton Company Preparation and use of gelable silicate solutions in oil field applications
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
DE69611653T2 (de) * 1995-11-10 2001-05-03 Tokuyama Corp., Tokuya Poliersuspensionen und Verfahren zu ihrer Herstellung
US6062952A (en) * 1997-06-05 2000-05-16 Robinson; Karl M. Planarization process with abrasive polishing slurry that is selective to a planarized surface
CO5070714A1 (es) * 1998-03-06 2001-08-28 Nalco Chemical Co Proceso para la preparacion de silice coloidal estable
KR100574259B1 (ko) 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
JP3721497B2 (ja) * 1999-07-15 2005-11-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
TWI296006B (https=) * 2000-02-09 2008-04-21 Jsr Corp
JP2001294417A (ja) * 2000-04-12 2001-10-23 Nippon Chem Ind Co Ltd コロイダルシリカの製造方法
JP3837277B2 (ja) * 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
US6906109B2 (en) * 2000-09-01 2005-06-14 Chemical Products Corp. Method for controling uniformity of colloidal silica particle size
US6747065B1 (en) * 2000-09-01 2004-06-08 Chemical Products Corporation System and method for producing high purity colloidal silica and potassium hydroxide
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US7501001B2 (en) * 2001-08-02 2009-03-10 3M Innovative Properties Company Abrasive particles, and methods of making and using the same
US20030092246A1 (en) * 2001-10-11 2003-05-15 Wanat Stanley F. Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
JP2003142435A (ja) * 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP2003218069A (ja) * 2002-01-23 2003-07-31 Fujimi Inc 半導体デバイス製造に用いる、シリコンを選択的に研磨することができる研磨用組成物
DE10211958A1 (de) * 2002-03-18 2003-10-16 Wacker Chemie Gmbh Hochreines Silica-Pulver, Verfahren und Vorrichtung zu seiner Herstellung
JP4083528B2 (ja) 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
KR100855474B1 (ko) 2002-12-23 2008-09-01 주식회사 동진쎄미켐 산성 영역에서 콜로이달 실리카의 분산안정성과 과산화물산화제의 분해안정성이 뛰어난 구리 배선용 화학-기계적연마슬러리 조성물
JP2004349426A (ja) 2003-05-21 2004-12-09 Jsr Corp Ｓｔｉ用化学機械研磨方法
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
JP4759219B2 (ja) * 2003-11-25 2011-08-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US6979252B1 (en) * 2004-08-10 2005-12-27 Dupont Air Products Nanomaterials Llc Low defectivity product slurry for CMP and associated production method
SG160384A1 (en) * 2004-12-13 2010-04-29 Planar Solutions Llc Colloidal silica based chemical mechanical polishing slurry
US20060283095A1 (en) 2005-06-15 2006-12-21 Planar Solutions, Llc Fumed silica to colloidal silica conversion process
EP1966410B1 (en) * 2005-09-26 2018-12-26 Planar Solutions LLC Ultrapure colloidal silica for use in chemical mechanical polishing applications

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1640974A (zh) * 2003-12-25 2005-07-20 福吉米株式会社 抛光组合物和抛光方法
CN1670115A (zh) * 2004-03-19 2005-09-21 福吉米株式会社 抛光用组合物及抛光方法

Also Published As

Publication number Publication date
US8779011B2 (en) 2014-07-15
US20120145950A1 (en) 2012-06-14
EP1966410A2 (en) 2008-09-10
TW200724655A (en) 2007-07-01
WO2007038321A3 (en) 2007-07-12
US8211193B2 (en) 2012-07-03
JP2009510224A (ja) 2009-03-12
JP5345397B2 (ja) 2013-11-20
EP1966410B1 (en) 2018-12-26
KR101214060B1 (ko) 2012-12-20
EP1966410A4 (en) 2016-03-23
KR20100093620A (ko) 2010-08-25
WO2007038321A2 (en) 2007-04-05
US20070075292A1 (en) 2007-04-05
KR20080059266A (ko) 2008-06-26
US20070254964A1 (en) 2007-11-01

Similar Documents

Publication Publication Date Title
TWI404793B (zh) 用於化學機械拋光應用上的超純膠狀矽土
TW574334B (en) CMP slurry composition and a method for planarizing semiconductor device using the same
JP5038199B2 (ja) 酸化物ｃｍｐのための組成物
KR100901058B1 (ko) 연마용 실리카입자 분산액, 그 제조방법 및 연마재
JP3616802B2 (ja) スラリー組成物およびそれを用いる化学機械的研磨方法
JP5275595B2 (ja) 半導体ウエハ研磨用組成物および研磨方法
JP5002175B2 (ja) 研磨スラリーおよびウエハ再生方法
US6478836B1 (en) Cerium oxide slurry for polishing, process for preparing the slurry, and process for polishing with the slurry
US20080237535A1 (en) Composition for polishing semiconductor wafer, and method of producing the same
JP4113288B2 (ja) 研磨用組成物およびそれを用いたシリコンウェーハの加工方法
CN101126012A (zh) 半导体晶片研磨用组合物、其制造方法和研磨加工方法
JP6962783B2 (ja) 研磨用シリカ系粒子および研磨材
US20060283095A1 (en) Fumed silica to colloidal silica conversion process
KR20150032495A (ko) 저결점의 화학적 기계적 폴리싱 조성물
KR20220070289A (ko) 연마용 조성물
US6979252B1 (en) Low defectivity product slurry for CMP and associated production method
JP2000243733A (ja) 素子分離形成方法
JP2006012969A (ja) 研磨用シリカゾルおよびその製造方法
TWI401306B (zh) A polishing composition for polishing a wafer edge, a method for manufacturing the same, and a polishing method
JPH10172935A (ja) 研磨用組成物
JP2009188059A (ja) 半導体ウエハ研磨用コロイダルシリカおよびその製造方法
WO2024203912A1 (ja) 研磨用組成物の製造方法
JP2004111416A (ja) シリコンウェハー研磨用粒子および研磨材