TWI398938B - 可堆疊式積體電路封裝 - Google Patents
可堆疊式積體電路封裝 Download PDFInfo
- Publication number
- TWI398938B TWI398938B TW097138327A TW97138327A TWI398938B TW I398938 B TWI398938 B TW I398938B TW 097138327 A TW097138327 A TW 097138327A TW 97138327 A TW97138327 A TW 97138327A TW I398938 B TWI398938 B TW I398938B
- Authority
- TW
- Taiwan
- Prior art keywords
- die
- integrated circuit
- lead fingers
- packaged integrated
- sealing material
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1029—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being a lead frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本發明大體而言係針對封裝積體電路裝置之領域,且更特定言之,係針對一種可堆疊式積體電路封裝。
積體電路技術使用電氣裝置(例如,電晶體、電阻器、電容器等)來規劃功能電路之大量陣列。此等電路之複雜性要求使用數目不斷增加之鏈接電氣裝置,以使得電路可執行其預期功能。隨著電晶體之數目增加,積體電路尺寸縮小。半導體工業中之一挑戰在於開發用於電連接及封裝在同一及/或不同晶圓或晶片上製造之電路裝置的改良方法。一般而言,需要在半導體工業中建構在矽晶片/晶粒上佔據較少表面積之電晶體。
在半導體裝置總成之製造中,最通常將單一半導體晶粒併入於每一密封式封裝中。使用許多不同封裝式樣,包括雙列式封裝(dual inline packages;DIP)、鋸齒型單列式封裝(zig-zag inline packages;ZIP)、小外形J形彎頭(small outline J-bends;SOJ)、薄小外形封裝(thin small outline packages;TSOP)、塑膠有引線晶片載體(plastic leaded chip carriers;PLCC)、小外形積體電路(small outline integrated circuits;SOIC)、塑膠四方扁平封裝(plastic quad flat packs;PQFP)及互相交叉引線框(interdigitated leadframe;IDF)。一些半導體裝置總成在密封之前被連接至諸如電路板之基板。在一些應用中,積體電路晶粒被封裝在堆疊組態中以減小積體電路產品所佔據之地塊空間。製造商面臨著持續壓力來減小經封裝之積體電路裝置之尺寸且在封裝積體電路裝置時增大封裝密度。
參考結合隨附圖式所作出之以下描述可理解本發明,其中相似參考數字識別相似元件。
本發明之說明性實施例如下所述。為清楚起見,本說明書中並未描述實際實施之所有特徵。當然,應瞭解,在任何此實際實施例之開發中,必須做出眾多特定實施決策以達成開發者之特定目標,諸如,順應系統相關及商業相關之約束,其將自一實施至另一實施而變化。此外,應了解,此開發努力可能為複雜且耗時的,但對於受益於本揭示案之一般熟習此項技術者而言將不過為常規任務。
儘管將圖式所示之各種區域及結構描繪為具有極精確之明顯組態及輪廓,但熟習此項技術者認識到,實際上,此等區域及結構不如圖式中所指示的一樣精確。另外,與經製造之裝置上之該等特徵或區域的尺寸相比,圖式中所描繪之各種特徵及摻雜區域的相對尺寸可被誇大或減小。然而,包括所附圖式以描述及解釋本文所揭示之發明之說明性實例。
如圖1及圖2所示,在一說明性實施例中,兩個說明性可堆疊式封裝10A、10B堆疊在一起。封裝10A、10B之每一者包含複數個積體電路晶粒12,該複數個積體電路晶粒12藉由黏著或環氧樹脂材料13而彼此耦接。晶粒12被安置於傳統引線框之腳座20之上,該傳統引線框包含複數個引線或引線指狀物16。藉由說明性線接合件18將積體電路晶粒12電耦接至引線指狀物16。例如封膠之密封材料14形成於上述各種組件之周圍。如圖式中所觀察,引線指狀物16為彎曲的或摺疊的,使得引線指狀物16之部分16A安置於例如封膠之密封材料14之頂面14A之上。
亦應注意到,封裝10A、10B之每一者具有大體上平坦之底面17。藉由使用導電黏著劑或導電膏(未圖示)將封裝10A、10B電耦接至彼此,該導電黏著劑或導電膏安置於在每一封裝10A及10B上之引線指狀物16的嚙合部分之間。實務上,如圖3所示,藉由各種已知技術可將例如封裝10A之此封裝之底面電耦接至諸如印刷電路板50之另一結構。舉例而言,導電膏或黏著劑(未圖示)可塗覆至印刷電路板50上之襯墊52。若需要,亦可向腳座20提供接點54。
亦應注意到,在封裝10A、10B之每一封裝中的四個說明性晶粒12的描述僅以實例方式提供。因為熟習此項技術者在完整地閱讀本申請案後將意識到,本文所揭示之發明可用於在封裝10A或10B之一封裝內封裝任何數目的此晶粒。此外,在每一封裝10A、10B中之晶粒12的數目不必相同。另外,在例如封裝10A之每一封裝中之晶粒12可具有相同或不同的實體尺寸。最後,儘管圖1及圖2描繪了兩個說明性堆疊封裝10A、10B,但本發明可用於將任何所要數目之此等封裝堆疊在一起,例如,如3至5個此等封裝。因此,本文所揭示之發明具有廣泛應用且不應被視作限於本文所揭示之特定細節。
在圖1所展示之實施例中,在封裝10A與10B之間提供有氣隙23。若需要,如圖2所示,可形成或安置導熱材料24來填充氣隙23,藉此為堆疊封裝10A、10B提供增強的熱傳遞能力。在一說明性實施例中,導熱材料24可包含導熱膏或導熱帶,且該導熱材料可具有大約100μm至200μm之厚度。此等導熱材料為熟習此項技術者所熟知。
圖4係圖1中封裝10B之頂部之平面圖。如其中所示,五個說明性引線指狀物16僅沿積體電路晶粒12之邊延伸。實務上,實際產品可具有大量此等引線指狀物16,然而,為清楚起見,僅十個此等引線指狀物16展示於圖4中。當然,在其他應用中,引線指狀物16可圍繞封裝10B之整個周邊延伸或僅沿封裝10B之末端延伸。因此,本文所描述之說明性排列不應被視作本發明之限制。
圖5A至圖5G描繪一用於形成本文所描述之可堆疊式封裝之說明性製程流程。如圖5A所示,引線框30被安置於犧牲支撐結構26之上。引線框30包含說明性晶粒腳座20及複數個引線指狀物16。應注意到,出於說明之目的而示意性地描繪圖中所描繪之引線框30,圖式並不按比例繪製。在實際裝置中,本文所描述之各個組件及結構之相對尺寸可能不同於本文所描述之相對尺寸。引線框30可具有傳統構造且引線框可由各種導電材料(例如,銅、合金42等)製成。藉由黏著材料(未圖示)或使用其他類似技術可將引線框30初始地緊固於犧牲結構26。
如圖5B所示,藉由黏合材料(未圖示)將第一晶粒12A緊固於腳座20之上。若需要,藉由晶粒12A之底面15上之接觸襯墊(未圖示),可將晶粒12A電耦接至腳座20。藉由塗覆導電膏或其他類似材料(未圖示)可建立電氣連接。另外,在一些應用中,晶粒12A可以一方式耦接至腳座20,以提高晶粒12A與腳座20間之熱傳遞。舉例而言,可提供設計用來提供增強之熱傳遞能力之黏著劑來增強晶粒12A與腳座20間之熱傳遞的效果。晶粒12A亦可電耦接至引線指狀物16之一或多者。在一說明性實施例中,線接合件18可用於此目的。藉由使用已知技術,線接合件18可導電地耦接至在晶粒12A上之接合襯墊(未圖示),且導電地耦接至引線指狀物16。其後,黏著材料層13被塗覆至晶粒12A之頂面19來附接另一晶粒12B,如圖5C所示。該過程基本上重複用於附接說明性晶粒12C(圖5D)及說明性晶粒12D(圖5E)。
接下來,如圖5F所示,密封材料14形成於圖5E中所描繪之結構之周圍。藉由各種已知成型技術(例如轉移成型)及材料(例如封膠)可形成密封材料14。側面14B之釋放角可視特定應用而改變。在一說明性實施例中,釋放角可為大約8度至20度。
接下來,如圖5G所示,引線指狀物16係彎曲或摺疊的,使得引線指狀物16之部分16A被安置於密封材料14之頂面14A之部分之上。注意,摺疊之引線指狀物16的角度不必與密封材料14之側面14B的角度相匹配。
在圖5G中所描述之裝置可其後經受各種不同的測試,以證實裝置之用以執行其預期功能之性能及/或能力。事實上,若需要,可在製造裝置時的各階段來執行此測試。最終,目標僅為"已知良好"之堆疊封裝(例如,封裝10A、10B),亦即,已通過一套所要的電氣及/或機械完整性測試之封裝。
上文中揭示之特定實施例僅為說明性的,因為獲得本文中教示的益處之熟習此項技術者可以不同但等效的方式修改並實踐本發明。舉例而言,在上文中陳述的製程步驟可以不同次序執行。此外,除以下申請專利範圍中所描述之外,並不意欲限制本文中展示之構造或設計之細節。因此,顯然可改變或修改以上所揭示之特定實施例,且認為所有此等變化在本發明之範疇及精神內。因此,本文中尋求之保護陳述於以下申請專利範圍中。
10A...可堆疊式封裝
10B...可堆疊式封裝
12...積體電路晶粒
12A...第一晶粒
12B...另一晶粒
12C...說明性晶粒
12D...說明性晶粒
13...黏著或環氧樹脂材料
14...密封材料
14A...密封材料之頂面
14B...密封材料之側面
16...引線指狀物
16A...引線指狀物之一部分
17...底面
18...線接合件
19...晶粒12A之頂面
20...晶粒腳座
23...氣隙
24...導熱材料
26...犧牲支撐結構
30...引線框
50...印刷電路板
52...襯墊
54...接點
圖1及圖2係本文所揭示之可堆疊式積體電路封裝之說明性實施例的橫截面圖;
圖3係描繪說明性實例之橫截面圖,其中本文所揭示之複數個可堆疊式積體電路封裝被操作地耦接至印刷電路板;
圖4係本文所揭示之可堆疊式積體電路封裝之說明性實施例的平面圖;及
圖5A至圖5G描繪可用於形成本文所描述之可堆疊式積體電路封裝之說明性製程流程。
儘管本文所揭示之發明易受各種修改及替代形式之影響,但其具體實施例已在圖式中以實例展示且在本文中加以詳細描述。然而,應瞭解,本文中特定實施例之描述並非意欲將本發明限制於所揭示之特定形式,而相反,本發明將涵蓋屬於由所附申請專利範圍界定之本發明之精神及範圍之內的所有修改、均等物及替代。
10B...可堆疊式封裝
12...積體電路晶粒
13...黏著或環氧材料
14...密封材料
14A...密封材料之頂面
16...引線指狀物
16A...引線指狀物之一部分
17...底面
18...線接合件
20...晶粒腳座
23...氣隙
Claims (20)
- 一種經封裝之積體電路裝置,其包含:一引線框,其包含一晶粒腳座及複數個引線指狀物;複數個積體電路晶粒,其係以一堆疊排列安置於該腳座上,其中該等晶粒之全部皆朝上且在相鄰晶粒之間具有一黏著層;複數個導電結構,用於將該複數個晶粒之每一者耦接至該等引線指狀物;及一密封材料體,其安置於該複數個晶粒及該複數個導電結構周圍,該密封材料體具有一頂面,其中該複數個引線指狀物被摺疊,使得該等引線指狀物之一部分被安置於該密封材料體之該頂面之上;以及該腳座具有不含該密封材料之一低側面。
- 如請求項1之裝置,其中該晶粒腳座及該等引線指狀物界定一大體上平坦之底面。
- 如請求項2之裝置,其中該複數個導電結構包含複數個線接合件,該等線接合件接附至該晶粒之一邊緣旁。
- 如請求項2之裝置,其中該複數個晶粒中之一第一晶粒係藉由一導電材料而耦接至該晶粒腳座。
- 如請求項2之裝置,其中該複數個積體電路晶粒係藉由黏著或環氧樹脂材料而彼此耦接。
- 一種堆疊總成,其包含:一第一經封裝之積體電路裝置及一第二經封裝之積體電路裝置,該第二經封裝之積體電路裝置堆疊於該第一 經封裝之積體電路裝置之上,該第一及第二經封裝之積體電路裝置之每一者包含:一引線框,其包含一晶粒腳座及複數個引線指狀物;複數個積體電路晶粒,其係以一堆疊排列安置於該腳座之一頂面上,其中在相鄰晶粒之間具有一黏著層;複數個導電結構,用於將該複數個晶粒之每一者耦接至該等引線指狀物;及一密封材料體,其係在該複數個晶粒及該複數個導電結構周圍,在該腳座的該頂面及側邊上具有該密封材料,但並非在該腳座之底面上,該密封材料體具有一頂面,其中該複數個引線指狀物被摺疊,使得該等引線指狀物之一部分被安置於該密封材料體之該頂面之上,以及一導熱膏或導熱膠布接觸該第二經封裝之積體電路之該晶粒腳座的該底面以及在第一積體電路封裝中該複數個晶粒的最上層者之一頂面。
- 如請求項6之總成,其中該第一經封裝之積體電路裝置及該第二經封裝之積體電路裝置之該等引線指狀物電耦接至彼此。
- 如請求項6之總成,其中該第二經封裝之積體電路裝置上之該等引線指狀物之一底面導電地耦接至該第一經封裝之積體電路裝置上之該等引線指狀物之該等部分之一 頂面,該等部分被安置於該密封材料體之該頂面之上。
- 如請求項6之總成,進一步包含一印刷電路板,該印刷電路板電耦接至該第一經封裝之積體電路裝置之該等引線指狀物。
- 如請求項9之總成,其中該印刷電路板藉由該晶粒腳座之該底面之一接點電耦接至該第一經封裝之積體電路裝置之該晶粒腳座。
- 如請求項6之總成,其中該第一及第二經封裝積體電路裝置、該晶粒腳座、該密封材料體及該等引線指狀物中至少一者界定一大體上平坦之底面。
- 如請求項11之總成,其中在該第一及第二經封裝積體電路裝置中至少一者中,該複數個導電結構包含複數個線接合件。
- 如請求項11之總成,其中在該第一及第二經封裝積體電路裝置中至少一者中,該複數個晶粒中之一第一晶粒係藉由一導電材料而耦接至該晶粒腳座。
- 如請求項11之總成,在該第一及第二經封裝積體電路裝置中至少一者中,其中該複數個積體電路晶粒係藉由黏著或環氧樹脂材料而彼此耦接。
- 一種用於封裝積體電路裝置之方法,其包含:附接一第一晶粒至一引線框之一腳座,該引線框包含複數個引線指狀物;將至少一個額外晶粒安置於該第一晶粒之上,該第一晶粒及該至少一個額外晶粒被電耦接至該複數個引線指 狀物,其中全部晶粒皆朝上且在相鄰晶粒之間具有一黏著層;形成一密封材料體,該密封材料體圍繞該第一晶粒及該至少一個額外晶粒,但並非在該腳座之該低側面上;及摺疊該複數個引線指狀物,使得該等引線指狀物之一部分被安置於該密封材料體之一頂面之上。
- 如請求項15之方法,其中附接該第一晶粒至該腳座包含藉由一導電材料將該第一晶粒附接至該腳座。
- 如請求項15之方法,其中該第一晶粒及該至少一個額外晶粒係由複數個線接合件而電耦接至該等引線指狀物。
- 如請求項15之方法,其中該等引線指狀物僅沿著該晶粒腳座之相對邊而安置。
- 如請求項17之方法,其中在將該至少一個額外晶粒安置於該第一晶粒上之前,將該第一晶粒電耦接至該等引線指狀物。
- 如請求項15之方法,其中該晶粒腳座、該密封材料體及該等引線指狀物界定一大體上平坦之底面。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/866,788 US20090091009A1 (en) | 2007-10-03 | 2007-10-03 | Stackable integrated circuit package |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200924147A TW200924147A (en) | 2009-06-01 |
TWI398938B true TWI398938B (zh) | 2013-06-11 |
Family
ID=40070647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097138327A TWI398938B (zh) | 2007-10-03 | 2008-10-03 | 可堆疊式積體電路封裝 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090091009A1 (zh) |
TW (1) | TWI398938B (zh) |
WO (1) | WO2009046030A1 (zh) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101053079A (zh) | 2004-11-03 | 2007-10-10 | 德塞拉股份有限公司 | 堆叠式封装的改进 |
US8058101B2 (en) | 2005-12-23 | 2011-11-15 | Tessera, Inc. | Microelectronic packages and methods therefor |
US9159708B2 (en) | 2010-07-19 | 2015-10-13 | Tessera, Inc. | Stackable molded microelectronic packages with area array unit connectors |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
KR101075241B1 (ko) | 2010-11-15 | 2011-11-01 | 테세라, 인코포레이티드 | 유전체 부재에 단자를 구비하는 마이크로전자 패키지 |
US20120146206A1 (en) | 2010-12-13 | 2012-06-14 | Tessera Research Llc | Pin attachment |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US8618659B2 (en) | 2011-05-03 | 2013-12-31 | Tessera, Inc. | Package-on-package assembly with wire bonds to encapsulation surface |
US8836136B2 (en) | 2011-10-17 | 2014-09-16 | Invensas Corporation | Package-on-package assembly with wire bond vias |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US9349706B2 (en) | 2012-02-24 | 2016-05-24 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8372741B1 (en) | 2012-02-24 | 2013-02-12 | Invensas Corporation | Method for package-on-package assembly with wire bonds to encapsulation surface |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9391008B2 (en) | 2012-07-31 | 2016-07-12 | Invensas Corporation | Reconstituted wafer-level package DRAM |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
US8975738B2 (en) | 2012-11-12 | 2015-03-10 | Invensas Corporation | Structure for microelectronic packaging with terminals on dielectric mass |
US8878353B2 (en) | 2012-12-20 | 2014-11-04 | Invensas Corporation | Structure for microelectronic packaging with bond elements to encapsulation surface |
US9136254B2 (en) | 2013-02-01 | 2015-09-15 | Invensas Corporation | Microelectronic package having wire bond vias and stiffening layer |
JP6092645B2 (ja) * | 2013-02-07 | 2017-03-08 | エスアイアイ・セミコンダクタ株式会社 | 半導体装置 |
US9034696B2 (en) | 2013-07-15 | 2015-05-19 | Invensas Corporation | Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation |
US9023691B2 (en) | 2013-07-15 | 2015-05-05 | Invensas Corporation | Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation |
US8883563B1 (en) | 2013-07-15 | 2014-11-11 | Invensas Corporation | Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US9685365B2 (en) | 2013-08-08 | 2017-06-20 | Invensas Corporation | Method of forming a wire bond having a free end |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9087815B2 (en) | 2013-11-12 | 2015-07-21 | Invensas Corporation | Off substrate kinking of bond wire |
US9082753B2 (en) | 2013-11-12 | 2015-07-14 | Invensas Corporation | Severing bond wire by kinking and twisting |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9263394B2 (en) | 2013-11-22 | 2016-02-16 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
US9214454B2 (en) | 2014-03-31 | 2015-12-15 | Invensas Corporation | Batch process fabrication of package-on-package microelectronic assemblies |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9646917B2 (en) | 2014-05-29 | 2017-05-09 | Invensas Corporation | Low CTE component with wire bond interconnects |
US9412714B2 (en) | 2014-05-30 | 2016-08-09 | Invensas Corporation | Wire bond support structure and microelectronic package including wire bonds therefrom |
US9735084B2 (en) | 2014-12-11 | 2017-08-15 | Invensas Corporation | Bond via array for thermal conductivity |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US9911718B2 (en) | 2015-11-17 | 2018-03-06 | Invensas Corporation | ‘RDL-First’ packaged microelectronic device for a package-on-package device |
US9659848B1 (en) | 2015-11-18 | 2017-05-23 | Invensas Corporation | Stiffened wires for offset BVA |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
KR20210148743A (ko) * | 2020-06-01 | 2021-12-08 | 삼성전자주식회사 | 반도체 패키지 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5835988A (en) * | 1996-03-27 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Packed semiconductor device with wrap around external leads |
USRE36613E (en) * | 1993-04-06 | 2000-03-14 | Micron Technology, Inc. | Multi-chip stacked devices |
US20010000053A1 (en) * | 1998-10-21 | 2001-03-22 | Suh Hee Joong | Chip stack-type semiconductor package and method for fabricating the same |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55111151A (en) * | 1979-02-20 | 1980-08-27 | Nec Corp | Integrated circuit device |
US5139973A (en) * | 1990-12-17 | 1992-08-18 | Allegro Microsystems, Inc. | Method for making a semiconductor package with the distance between a lead frame die pad and heat spreader determined by the thickness of an intermediary insulating sheet |
US5457071A (en) * | 1993-09-03 | 1995-10-10 | International Business Machine Corp. | Stackable vertical thin package/plastic molded lead-on-chip memory cube |
KR0184076B1 (ko) * | 1995-11-28 | 1999-03-20 | 김광호 | 상하 접속 수단이 패키지 내부에 형성되어 있는 3차원 적층형 패키지 |
JPH10256473A (ja) * | 1997-03-10 | 1998-09-25 | Sanyo Electric Co Ltd | 半導体装置 |
US6639308B1 (en) * | 1999-12-16 | 2003-10-28 | Amkor Technology, Inc. | Near chip size semiconductor package |
KR100426494B1 (ko) * | 1999-12-20 | 2004-04-13 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 및 이것의 제조방법 |
US6518659B1 (en) * | 2000-05-08 | 2003-02-11 | Amkor Technology, Inc. | Stackable package having a cavity and a lid for an electronic device |
US6424031B1 (en) * | 2000-05-08 | 2002-07-23 | Amkor Technology, Inc. | Stackable package with heat sink |
US6576494B1 (en) * | 2000-06-28 | 2003-06-10 | Micron Technology, Inc. | Recessed encapsulated microelectronic devices and methods for formation |
JP4669166B2 (ja) * | 2000-08-31 | 2011-04-13 | エルピーダメモリ株式会社 | 半導体装置 |
US6337510B1 (en) * | 2000-11-17 | 2002-01-08 | Walsin Advanced Electronics Ltd | Stackable QFN semiconductor package |
JP2002231882A (ja) * | 2001-02-06 | 2002-08-16 | Mitsubishi Electric Corp | 半導体装置 |
US6900528B2 (en) * | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
SG120858A1 (en) * | 2001-08-06 | 2006-04-26 | Micron Technology Inc | Quad flat no-lead (qfn) grid array package, methodof making and memory module and computer system including same |
SG111919A1 (en) * | 2001-08-29 | 2005-06-29 | Micron Technology Inc | Packaged microelectronic devices and methods of forming same |
US7081373B2 (en) * | 2001-12-14 | 2006-07-25 | Staktek Group, L.P. | CSP chip stack with flex circuit |
KR100447869B1 (ko) * | 2001-12-27 | 2004-09-08 | 삼성전자주식회사 | 다핀 적층 반도체 칩 패키지 및 이에 사용되는 리드 프레임 |
KR100470897B1 (ko) * | 2002-07-19 | 2005-03-10 | 삼성전자주식회사 | 듀얼 다이 패키지 제조 방법 |
SG120879A1 (en) * | 2002-08-08 | 2006-04-26 | Micron Technology Inc | Packaged microelectronic components |
SG114585A1 (en) * | 2002-11-22 | 2005-09-28 | Micron Technology Inc | Packaged microelectronic component assemblies |
KR100592786B1 (ko) * | 2003-08-22 | 2006-06-26 | 삼성전자주식회사 | 면 실장형 반도체 패키지를 이용한 적층 패키지 및 그제조 방법 |
CN100514580C (zh) * | 2003-08-26 | 2009-07-15 | 宇芯(毛里求斯)控股有限公司 | 可颠倒无引线封装及其堆叠 |
US6977431B1 (en) * | 2003-11-05 | 2005-12-20 | Amkor Technology, Inc. | Stackable semiconductor package and manufacturing method thereof |
TWI227555B (en) * | 2003-11-17 | 2005-02-01 | Advanced Semiconductor Eng | Structure of chip package and the process thereof |
KR100575590B1 (ko) * | 2003-12-17 | 2006-05-03 | 삼성전자주식회사 | 열방출형 적층 패키지 및 그들이 실장된 모듈 |
KR100642746B1 (ko) * | 2004-02-06 | 2006-11-10 | 삼성전자주식회사 | 멀티 스택 패키지의 제조방법 |
US7242091B2 (en) * | 2005-03-02 | 2007-07-10 | Stats Chippac Ltd. | Stacked semiconductor packages and method therefor |
US20070148820A1 (en) * | 2005-12-22 | 2007-06-28 | Micron Technology, Inc. | Microelectronic devices and methods for manufacturing microelectronic devices |
US8310060B1 (en) * | 2006-04-28 | 2012-11-13 | Utac Thai Limited | Lead frame land grid array |
-
2007
- 2007-10-03 US US11/866,788 patent/US20090091009A1/en not_active Abandoned
-
2008
- 2008-09-30 WO PCT/US2008/078334 patent/WO2009046030A1/en active Application Filing
- 2008-10-03 TW TW097138327A patent/TWI398938B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE36613E (en) * | 1993-04-06 | 2000-03-14 | Micron Technology, Inc. | Multi-chip stacked devices |
US5835988A (en) * | 1996-03-27 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Packed semiconductor device with wrap around external leads |
US20010000053A1 (en) * | 1998-10-21 | 2001-03-22 | Suh Hee Joong | Chip stack-type semiconductor package and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
US20090091009A1 (en) | 2009-04-09 |
WO2009046030A1 (en) | 2009-04-09 |
TW200924147A (en) | 2009-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI398938B (zh) | 可堆疊式積體電路封裝 | |
US11398457B2 (en) | Packaged integrated circuit devices with through-body conductive vias, and methods of making same | |
US6300679B1 (en) | Flexible substrate for packaging a semiconductor component | |
EP0502710B1 (en) | Flexible film semiconductor package | |
US7592691B2 (en) | High density stacked die assemblies, structures incorporated therein and methods of fabricating the assemblies | |
US20080182398A1 (en) | Varied Solder Mask Opening Diameters Within a Ball Grid Array Substrate | |
JP2005519471A (ja) | 積層ダイ半導体装置 | |
US7482679B2 (en) | Leadframe for a semiconductor device | |
US9362260B2 (en) | Stacked packaged integrated circuit devices, and methods of making same | |
US11031356B2 (en) | Semiconductor package structure for improving die warpage and manufacturing method thereof | |
TWI430425B (zh) | 採用凸塊技術之積體電路封裝件系統 | |
US7372129B2 (en) | Two die semiconductor assembly and system including same | |
JP2005535103A (ja) | 半導体パッケージ装置ならびに製作および試験方法 | |
JP2002043494A (ja) | 集積回路用の平坦化されたプラスチック・パッケージ・モジュール | |
US8217505B2 (en) | Packaged IC device comprising an embedded flex circuit on leadframe, and methods of making same | |
JP4485210B2 (ja) | 半導体デバイス、電子機器、半導体デバイスの製造方法及び電子機器の製造方法 | |
US11688715B2 (en) | Semiconductor die with multiple contact pads electrically coupled to a lead of a lead frame | |
TWI399840B (zh) | 具有獨立內引腳之導線架及其製造方法 |