TWI394632B - 藉由添加銅以改善焊料互連 - Google Patents

藉由添加銅以改善焊料互連 Download PDF

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Publication number
TWI394632B
TWI394632B TW099122029A TW99122029A TWI394632B TW I394632 B TWI394632 B TW I394632B TW 099122029 A TW099122029 A TW 099122029A TW 99122029 A TW99122029 A TW 99122029A TW I394632 B TWI394632 B TW I394632B
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TW
Taiwan
Prior art keywords
layer
nickel
copper
bump
sub
Prior art date
Application number
TW099122029A
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English (en)
Chinese (zh)
Other versions
TW201107071A (en
Inventor
馬克Ａ 貝克曼
約翰Ｗ 歐森巴契
基斯荷Ｖ 迪賽
Original Assignee
Lsi公司
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Filing date
Publication date
Application filed by Lsi公司 filed Critical Lsi公司
Publication of TW201107071A publication Critical patent/TW201107071A/zh
Application granted granted Critical
Publication of TWI394632B publication Critical patent/TWI394632B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/098—Applying pastes or inks, e.g. screen printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07255—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H10W72/223—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core characterised by the structure of the outermost layers, e.g. multilayered coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H10W72/2528—Intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
  • Manufacturing & Machinery (AREA)
TW099122029A 2009-07-13 2010-07-05 藉由添加銅以改善焊料互連 TWI394632B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/501,686 US8378485B2 (en) 2009-07-13 2009-07-13 Solder interconnect by addition of copper

Publications (2)

Publication Number Publication Date
TW201107071A TW201107071A (en) 2011-03-01
TWI394632B true TWI394632B (zh) 2013-05-01

Family

ID=43027609

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099122029A TWI394632B (zh) 2009-07-13 2010-07-05 藉由添加銅以改善焊料互連

Country Status (6)

Country Link
US (2) US8378485B2 (https=)
EP (1) EP2276063A3 (https=)
JP (1) JP5604665B2 (https=)
KR (1) KR101704030B1 (https=)
CN (1) CN101958259B (https=)
TW (1) TWI394632B (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8378485B2 (en) 2009-07-13 2013-02-19 Lsi Corporation Solder interconnect by addition of copper
CN103180944A (zh) * 2010-10-25 2013-06-26 松下电器产业株式会社 电子元件的接合方式
US8268675B2 (en) * 2011-02-11 2012-09-18 Nordson Corporation Passivation layer for semiconductor device packaging
US8889995B2 (en) 2011-03-03 2014-11-18 Skyworks Solutions, Inc. Wire bond pad system and method
WO2012118896A2 (en) * 2011-03-03 2012-09-07 Skyworks Solutions, Inc. Apparatus and methods related to wire bond pads and reducing impact of high rf loss plating
US8686537B2 (en) 2011-03-03 2014-04-01 Skyworks Solutions, Inc. Apparatus and methods for reducing impact of high RF loss plating
KR101108548B1 (ko) * 2011-07-12 2012-01-30 김진철 이어폰 케이블 권취기구
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
US9099396B2 (en) 2011-11-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Post-passivation interconnect structure and method of forming the same
US20130241058A1 (en) * 2012-03-16 2013-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Wire Bonding Structures for Integrated Circuits
JP5893800B2 (ja) 2012-06-14 2016-03-23 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. パワーアンプモジュールを含む関連するシステム、デバイス、および方法
US10496977B2 (en) 2012-07-16 2019-12-03 Square, Inc. Storing and forwarding payment transactions
JP5893528B2 (ja) * 2012-07-27 2016-03-23 新日鉄住金マテリアルズ株式会社 無鉛はんだバンプ接合構造
JP2014116367A (ja) * 2012-12-06 2014-06-26 Fujitsu Ltd 電子部品、電子装置の製造方法及び電子装置
JP2014146652A (ja) * 2013-01-28 2014-08-14 Toppan Printing Co Ltd 配線基板およびその製造方法
US9299680B2 (en) 2013-03-14 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure having dies with connectors
JP6046010B2 (ja) * 2013-09-09 2016-12-14 株式会社東芝 半導体装置及びその製造方法
US9723716B2 (en) * 2013-09-27 2017-08-01 Infineon Technologies Ag Contact pad structure, an electronic component, and a method for manufacturing a contact pad structure
CN106030783B (zh) * 2014-03-27 2019-06-18 英特尔公司 用于低温附接的混合互连
JP6281468B2 (ja) 2014-10-30 2018-02-21 トヨタ自動車株式会社 半導体装置とその製造方法
JP6287759B2 (ja) * 2014-10-30 2018-03-07 トヨタ自動車株式会社 半導体装置とその製造方法
US9881302B1 (en) 2014-12-11 2018-01-30 Square, Inc. Intelligent payment capture in failed authorization requests
US9576922B2 (en) 2015-05-04 2017-02-21 Globalfoundries Inc. Silver alloying post-chip join
DE102016103585B4 (de) * 2016-02-29 2022-01-13 Infineon Technologies Ag Verfahren zum Herstellen eines Package mit lötbarem elektrischen Kontakt
JP6729331B2 (ja) * 2016-11-30 2020-07-22 富士通株式会社 電子装置及び電子装置の製造方法
US10483221B2 (en) 2017-10-30 2019-11-19 Micron Technology, Inc. 3DI solder cup
KR102075681B1 (ko) 2018-11-16 2020-02-11 박민호 이어폰 전선 꼬임 방지장치
CN110682021B (zh) * 2019-11-11 2021-08-03 重庆理工大学 一种抑制界面imc生长的微焊点的制备方法
KR102837298B1 (ko) 2020-12-22 2025-07-23 삼성전자주식회사 반도체 패키지 및 그 제조 방법
WO2023123116A1 (zh) 2021-12-29 2023-07-06 京东方科技集团股份有限公司 线路板、功能背板、背光模组、显示面板及显示装置
US12581596B2 (en) * 2021-12-31 2026-03-17 Boe Technology Group Co., Ltd. Wiring board, functional backplane and method for manufacturing the same
CN116965159A (zh) 2022-02-24 2023-10-27 京东方科技集团股份有限公司 线路板及其制造方法、功能背板、背光模组、显示装置
US12610675B2 (en) 2022-04-21 2026-04-21 Boe Technology Group Co., Ltd. Circuit board, light-emitting substrate, backlight module, display panel and display device
US12457685B2 (en) 2022-10-31 2025-10-28 Beijing Boe Technology Development Co., Ltd. Circuit board, light-emitting substrate, backlight module, and display apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW540276B (en) * 2001-12-28 2003-07-01 Univ Nat Central Solder point with low speed of consuming nickel
US20030193094A1 (en) * 2002-04-12 2003-10-16 Nec Electronics Corporation Semiconductor device and method for fabricating the same

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545923A (en) * 1993-10-22 1996-08-13 Lsi Logic Corporation Semiconductor device assembly with minimized bond finger connections
US5466635A (en) * 1994-06-02 1995-11-14 Lsi Logic Corporation Process for making an interconnect bump for flip-chip integrated circuit including integral standoff and hourglass shaped solder coating
JP3060896B2 (ja) * 1995-05-26 2000-07-10 日本電気株式会社 バンプ電極の構造
US5918794A (en) * 1995-12-28 1999-07-06 Lucent Technologies Inc. Solder bonding of dense arrays of microminiature contact pads
US5667132A (en) * 1996-04-19 1997-09-16 Lucent Technologies Inc. Method for solder-bonding contact pad arrays
US5891756A (en) * 1997-06-27 1999-04-06 Delco Electronics Corporation Process for converting a wire bond pad to a flip chip solder bump pad and pad formed thereby
TW453137B (en) * 1997-08-25 2001-09-01 Showa Denko Kk Electrode structure of silicon semiconductor device and the manufacturing method of silicon device using it
US6013713A (en) * 1997-11-06 2000-01-11 International Business Machines Corporation Electrode modification using an unzippable polymer paste
JP3968554B2 (ja) * 2000-05-01 2007-08-29 セイコーエプソン株式会社 バンプの形成方法及び半導体装置の製造方法
KR100398716B1 (ko) * 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 반도체 모듈 및 반도체 장치를 접속한 회로 기판
US6348399B1 (en) * 2000-07-06 2002-02-19 Advanced Semiconductor Engineering, Inc. Method of making chip scale package
US20020086520A1 (en) * 2001-01-02 2002-07-04 Advanced Semiconductor Engineering Inc. Semiconductor device having bump electrode
JP4656275B2 (ja) 2001-01-15 2011-03-23 日本電気株式会社 半導体装置の製造方法
US6689680B2 (en) * 2001-07-14 2004-02-10 Motorola, Inc. Semiconductor device and method of formation
JP2003045908A (ja) 2001-08-01 2003-02-14 Toshiba Corp 半導体装置とその製造方法
US20030219623A1 (en) * 2002-05-21 2003-11-27 Kao Cheng Heng Solder joints with low consumption rate of nickel layer
DE10241589B4 (de) * 2002-09-05 2007-11-22 Qimonda Ag Verfahren zur Lötstopp-Strukturierung von Erhebungen auf Wafern
US7081372B2 (en) * 2003-07-09 2006-07-25 Chartered Semiconductor Manufacturing Ltd. Aluminum cap with electroless nickel/immersion gold
US7186645B2 (en) * 2003-10-13 2007-03-06 Intel Corporation Selective plating of package terminals
DE102005051857A1 (de) * 2005-05-25 2007-02-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. UBM-PAD, Lötkontakt und Verfahren zur Herstellung einer Lötverbindung
JP4305430B2 (ja) * 2005-08-24 2009-07-29 ソニー株式会社 部品実装方法および部品実装体
DE102005055488A1 (de) 2005-11-18 2007-01-04 Infineon Technologies Ag Elektronische Struktur mit mehreren elektronischen Komponenten und Verfahren zu ihrer Herstellung
US20070238283A1 (en) * 2006-04-05 2007-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Novel under-bump metallization for bond pad soldering
JP4597940B2 (ja) * 2006-10-26 2010-12-15 富士通セミコンダクター株式会社 外部接続端子
US8314500B2 (en) * 2006-12-28 2012-11-20 Ultratech, Inc. Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers
WO2009013826A1 (ja) 2007-07-25 2009-01-29 Fujitsu Microelectronics Limited 半導体装置
JP4547411B2 (ja) * 2007-10-05 2010-09-22 富士通株式会社 半導体装置、及び半導体装置の製造方法
JP2010040691A (ja) * 2008-08-04 2010-02-18 Ebara Corp 鉛フリーバンプ形成方法
US8378485B2 (en) 2009-07-13 2013-02-19 Lsi Corporation Solder interconnect by addition of copper

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW540276B (en) * 2001-12-28 2003-07-01 Univ Nat Central Solder point with low speed of consuming nickel
US20030193094A1 (en) * 2002-04-12 2003-10-16 Nec Electronics Corporation Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
CN101958259A (zh) 2011-01-26
KR20110006615A (ko) 2011-01-20
JP2011023721A (ja) 2011-02-03
US8580621B2 (en) 2013-11-12
KR101704030B1 (ko) 2017-02-07
EP2276063A3 (en) 2011-04-20
US8378485B2 (en) 2013-02-19
EP2276063A2 (en) 2011-01-19
CN101958259B (zh) 2014-09-03
TW201107071A (en) 2011-03-01
US20110006415A1 (en) 2011-01-13
JP5604665B2 (ja) 2014-10-08
US20130149857A1 (en) 2013-06-13

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